CN114365045B - 曝光装置和制造物品的方法 - Google Patents

曝光装置和制造物品的方法 Download PDF

Info

Publication number
CN114365045B
CN114365045B CN202080061309.5A CN202080061309A CN114365045B CN 114365045 B CN114365045 B CN 114365045B CN 202080061309 A CN202080061309 A CN 202080061309A CN 114365045 B CN114365045 B CN 114365045B
Authority
CN
China
Prior art keywords
light shielding
shielding member
plane
light
end portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080061309.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN114365045A (zh
Inventor
小林大辅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN114365045A publication Critical patent/CN114365045A/zh
Application granted granted Critical
Publication of CN114365045B publication Critical patent/CN114365045B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Developing Agents For Electrophotography (AREA)
CN202080061309.5A 2019-09-03 2020-07-21 曝光装置和制造物品的方法 Active CN114365045B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019160664A JP7446069B2 (ja) 2019-09-03 2019-09-03 露光装置及び物品の製造方法
JP2019-160664 2019-09-03
PCT/JP2020/028195 WO2021044755A1 (ja) 2019-09-03 2020-07-21 露光装置及び物品の製造方法

Publications (2)

Publication Number Publication Date
CN114365045A CN114365045A (zh) 2022-04-15
CN114365045B true CN114365045B (zh) 2024-04-26

Family

ID=74849206

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080061309.5A Active CN114365045B (zh) 2019-09-03 2020-07-21 曝光装置和制造物品的方法

Country Status (7)

Country Link
US (1) US11762298B2 (https=)
EP (1) EP4027199A4 (https=)
JP (1) JP7446069B2 (https=)
KR (1) KR102746191B1 (https=)
CN (1) CN114365045B (https=)
TW (1) TWI805936B (https=)
WO (1) WO2021044755A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7680878B2 (ja) 2021-05-07 2025-05-21 キヤノン株式会社 照明光学系、露光装置、および物品の製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110529A (ja) * 2000-10-03 2002-04-12 Nikon Corp 投影露光装置及び該装置を用いたマイクロデバイス製造方法
JP2006253186A (ja) * 2005-03-08 2006-09-21 Nikon Corp 可変スリット装置、照明装置、露光装置、及びデバイスの製造方法
JP2010073835A (ja) * 2008-09-17 2010-04-02 Canon Inc 露光装置及びデバイス製造方法
WO2011010560A1 (ja) * 2009-07-24 2011-01-27 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
JP2017053888A (ja) * 2015-09-07 2017-03-16 キヤノン株式会社 露光方法および露光装置、ならびに物品の製造方法
CN107621754A (zh) * 2016-07-13 2018-01-23 佳能株式会社 曝光装置、曝光方法以及物品制造方法
US9880474B2 (en) * 2013-05-16 2018-01-30 Carl Zeiss Smt Gmbh System for producing structures in a substrate

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6013401A (en) * 1997-03-31 2000-01-11 Svg Lithography Systems, Inc. Method of controlling illumination field to reduce line width variation
JP2002033272A (ja) * 2000-05-11 2002-01-31 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2005109304A (ja) 2003-10-01 2005-04-21 Canon Inc 照明光学系及び露光装置
JP4458329B2 (ja) * 2003-12-26 2010-04-28 キヤノン株式会社 露光装置及びデバイス製造方法
JP5159027B2 (ja) * 2004-06-04 2013-03-06 キヤノン株式会社 照明光学系及び露光装置
JP2008153401A (ja) * 2006-12-15 2008-07-03 Canon Inc 露光装置及びデバイス製造方法
JP2009043933A (ja) * 2007-08-08 2009-02-26 Canon Inc 露光装置、調整方法、露光方法及びデバイス製造方法
JP2009059893A (ja) * 2007-08-31 2009-03-19 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP5127875B2 (ja) * 2010-04-28 2013-01-23 キヤノン株式会社 リソグラフィ装置及び物品の製造方法
JP6015930B2 (ja) * 2012-12-07 2016-10-26 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
KR102547257B1 (ko) * 2017-07-25 2023-06-23 도판 인사츠 가부시키가이샤 노광 장치 및 노광 방법
JP6991462B2 (ja) 2018-03-15 2022-01-12 オムロン株式会社 小型光電センサ
US11165978B2 (en) 2019-04-16 2021-11-02 Canon Kabushiki Kaisha Imaging device, control method thereof, and imaging apparatus

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110529A (ja) * 2000-10-03 2002-04-12 Nikon Corp 投影露光装置及び該装置を用いたマイクロデバイス製造方法
JP2006253186A (ja) * 2005-03-08 2006-09-21 Nikon Corp 可変スリット装置、照明装置、露光装置、及びデバイスの製造方法
JP2010073835A (ja) * 2008-09-17 2010-04-02 Canon Inc 露光装置及びデバイス製造方法
WO2011010560A1 (ja) * 2009-07-24 2011-01-27 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
US9880474B2 (en) * 2013-05-16 2018-01-30 Carl Zeiss Smt Gmbh System for producing structures in a substrate
JP2017053888A (ja) * 2015-09-07 2017-03-16 キヤノン株式会社 露光方法および露光装置、ならびに物品の製造方法
CN107621754A (zh) * 2016-07-13 2018-01-23 佳能株式会社 曝光装置、曝光方法以及物品制造方法

Also Published As

Publication number Publication date
TWI805936B (zh) 2023-06-21
JP7446069B2 (ja) 2024-03-08
WO2021044755A1 (ja) 2021-03-11
TW202111441A (zh) 2021-03-16
CN114365045A (zh) 2022-04-15
EP4027199A1 (en) 2022-07-13
KR102746191B1 (ko) 2024-12-24
US20220171291A1 (en) 2022-06-02
KR20220042453A (ko) 2022-04-05
JP2021039244A (ja) 2021-03-11
US11762298B2 (en) 2023-09-19
EP4027199A4 (en) 2023-09-06

Similar Documents

Publication Publication Date Title
KR20080056094A (ko) 노광 장치 및 디바이스 제조 방법
KR20010076350A (ko) 마이크로리소그래피 투영장치
TW200809919A (en) Exposure apparatus
KR101960153B1 (ko) 조명 광학계, 노광 장치 및 디바이스의 제조 방법
JP2009130071A (ja) 照明光学系、露光装置及びデバイスの製造方法
CN114365045B (zh) 曝光装置和制造物品的方法
US7242457B2 (en) Exposure apparatus and exposure method, and device manufacturing method using the same
CN114303101B (zh) 曝光装置以及物品的制造方法
CN114286966B (zh) 曝光装置以及物品制造方法
JP4950795B2 (ja) 露光装置、デバイス製造方法及び補正方法
JP2008124308A (ja) 露光方法及び露光装置、それを用いたデバイス製造方法
JP2018045228A (ja) 照明光学系、露光装置、及び物品製造方法
KR20250131207A (ko) 노광 장치, 조정 방법 및 물품의 제조 방법
KR20160034806A (ko) 조명 광학장치, 노광장치, 및 물품의 제조방법
WO2010073801A1 (ja) 照明光学系、露光装置及びデバイスの製造方法
JP2008277347A (ja) 露光装置及びデバイス製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant