TWI797764B - 單結晶的製造方法、磁場產生裝置及單結晶製造裝置 - Google Patents
單結晶的製造方法、磁場產生裝置及單結晶製造裝置 Download PDFInfo
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- TWI797764B TWI797764B TW110137020A TW110137020A TWI797764B TW I797764 B TWI797764 B TW I797764B TW 110137020 A TW110137020 A TW 110137020A TW 110137020 A TW110137020 A TW 110137020A TW I797764 B TWI797764 B TW I797764B
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- magnetic field
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- single crystal
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 78
- 229910052710 silicon Inorganic materials 0.000 description 78
- 239000010703 silicon Substances 0.000 description 78
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 50
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F7/064—Circuit arrangements for actuating electromagnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F7/20—Electromagnets; Actuators including electromagnets without armatures
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020186976 | 2020-11-10 | ||
| JP2020-186976 | 2020-11-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202223175A TW202223175A (zh) | 2022-06-16 |
| TWI797764B true TWI797764B (zh) | 2023-04-01 |
Family
ID=81601814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110137020A TWI797764B (zh) | 2020-11-10 | 2021-10-05 | 單結晶的製造方法、磁場產生裝置及單結晶製造裝置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12492489B2 (https=) |
| JP (1) | JP7687346B2 (https=) |
| KR (1) | KR102781133B1 (https=) |
| CN (1) | CN116438333A (https=) |
| DE (1) | DE112021005918T5 (https=) |
| TW (1) | TWI797764B (https=) |
| WO (1) | WO2022102251A1 (https=) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007184383A (ja) * | 2006-01-06 | 2007-07-19 | Kobe Steel Ltd | 磁場形成装置 |
| CN201670889U (zh) * | 2009-12-10 | 2010-12-15 | 嘉兴市中科光电科技有限公司 | 一种磁极间距可调的mcz永磁场装置 |
| CN101923591A (zh) * | 2010-08-09 | 2010-12-22 | 西安理工大学 | 用于mcz单晶炉的非对称勾形磁场的三维优化设计方法 |
| CN106191988A (zh) * | 2016-08-25 | 2016-12-07 | 宁夏中晶半导体材料有限公司 | 一种用于mcz法拉制单晶硅的降氧工艺及装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2561072B2 (ja) | 1986-04-30 | 1996-12-04 | 東芝セラミツクス株式会社 | 単結晶の育成方法及びその装置 |
| JP2572070B2 (ja) * | 1987-07-20 | 1997-01-16 | 東芝セラミツクス株式会社 | 単結晶の製造方法 |
| DE60041429D1 (de) | 1999-03-17 | 2009-03-12 | Shinetsu Handotai Kk | Verfahren zur herstellung von silicium einkristallen |
| JP3609312B2 (ja) | 2000-01-21 | 2005-01-12 | 住友重機械工業株式会社 | 水平磁界発生用超電導磁石装置 |
| JP3781300B2 (ja) | 2000-07-28 | 2006-05-31 | 信越半導体株式会社 | 半導体単結晶の製造方法及び半導体単結晶の製造装置 |
| JP2004051475A (ja) * | 2002-05-31 | 2004-02-19 | Toshiba Corp | 単結晶引上げ装置、超電導磁石および単結晶引上げ方法 |
| JP4363078B2 (ja) | 2003-04-28 | 2009-11-11 | 株式会社Ｓｕｍｃｏ | 単結晶の製造方法 |
| WO2008146371A1 (ja) * | 2007-05-30 | 2008-12-04 | Sumco Corporation | シリコン単結晶引上装置 |
| JP5056603B2 (ja) * | 2008-06-11 | 2012-10-24 | 株式会社Ｓｕｍｃｏ | シリコン単結晶の引上げ方法及び該方法により引上げられたインゴットから得られたシリコン単結晶ウェーハ |
| JP6436031B2 (ja) * | 2015-09-18 | 2018-12-12 | 信越半導体株式会社 | 単結晶引き上げ装置、及び単結晶引き上げ方法 |
| JP6620670B2 (ja) | 2016-05-16 | 2019-12-18 | 信越半導体株式会社 | 単結晶引き上げ装置及び単結晶引き上げ方法 |
| CN109811402A (zh) * | 2017-11-22 | 2019-05-28 | 上海新昇半导体科技有限公司 | 一种拉晶系统和拉晶方法 |
-
2021
- 2021-09-22 KR KR1020237013398A patent/KR102781133B1/ko active Active
- 2021-09-22 JP JP2022561308A patent/JP7687346B2/ja active Active
- 2021-09-22 CN CN202180075806.5A patent/CN116438333A/zh active Pending
- 2021-09-22 US US18/036,094 patent/US12492489B2/en active Active
- 2021-09-22 WO PCT/JP2021/034733 patent/WO2022102251A1/ja not_active Ceased
- 2021-09-22 DE DE112021005918.1T patent/DE112021005918T5/de active Pending
- 2021-10-05 TW TW110137020A patent/TWI797764B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007184383A (ja) * | 2006-01-06 | 2007-07-19 | Kobe Steel Ltd | 磁場形成装置 |
| CN201670889U (zh) * | 2009-12-10 | 2010-12-15 | 嘉兴市中科光电科技有限公司 | 一种磁极间距可调的mcz永磁场装置 |
| CN101923591A (zh) * | 2010-08-09 | 2010-12-22 | 西安理工大学 | 用于mcz单晶炉的非对称勾形磁场的三维优化设计方法 |
| CN106191988A (zh) * | 2016-08-25 | 2016-12-07 | 宁夏中晶半导体材料有限公司 | 一种用于mcz法拉制单晶硅的降氧工艺及装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2022102251A1 (https=) | 2022-05-19 |
| KR20230070287A (ko) | 2023-05-22 |
| WO2022102251A1 (ja) | 2022-05-19 |
| CN116438333A (zh) | 2023-07-14 |
| KR102781133B1 (ko) | 2025-03-12 |
| DE112021005918T5 (de) | 2023-08-31 |
| US20230407523A1 (en) | 2023-12-21 |
| JP7687346B2 (ja) | 2025-06-03 |
| TW202223175A (zh) | 2022-06-16 |
| US12492489B2 (en) | 2025-12-09 |
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