CN116438333A - 单晶的制造方法、磁场产生装置及单晶制造装置 - Google Patents

单晶的制造方法、磁场产生装置及单晶制造装置 Download PDF

Info

Publication number
CN116438333A
CN116438333A CN202180075806.5A CN202180075806A CN116438333A CN 116438333 A CN116438333 A CN 116438333A CN 202180075806 A CN202180075806 A CN 202180075806A CN 116438333 A CN116438333 A CN 116438333A
Authority
CN
China
Prior art keywords
magnetic field
coil
axis
single crystal
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180075806.5A
Other languages
English (en)
Chinese (zh)
Inventor
松岛直辉
横山龙介
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of CN116438333A publication Critical patent/CN116438333A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/06—Electromagnets; Actuators including electromagnets
    • H01F7/064—Circuit arrangements for actuating electromagnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/06—Electromagnets; Actuators including electromagnets
    • H01F7/20—Electromagnets; Actuators including electromagnets without armatures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202180075806.5A 2020-11-10 2021-09-22 单晶的制造方法、磁场产生装置及单晶制造装置 Pending CN116438333A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020186976 2020-11-10
JP2020-186976 2020-11-10
PCT/JP2021/034733 WO2022102251A1 (ja) 2020-11-10 2021-09-22 単結晶の製造方法、磁場発生装置及び単結晶製造装置

Publications (1)

Publication Number Publication Date
CN116438333A true CN116438333A (zh) 2023-07-14

Family

ID=81601814

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180075806.5A Pending CN116438333A (zh) 2020-11-10 2021-09-22 单晶的制造方法、磁场产生装置及单晶制造装置

Country Status (7)

Country Link
US (1) US12492489B2 (https=)
JP (1) JP7687346B2 (https=)
KR (1) KR102781133B1 (https=)
CN (1) CN116438333A (https=)
DE (1) DE112021005918T5 (https=)
TW (1) TWI797764B (https=)
WO (1) WO2022102251A1 (https=)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2561072B2 (ja) 1986-04-30 1996-12-04 東芝セラミツクス株式会社 単結晶の育成方法及びその装置
JP2572070B2 (ja) * 1987-07-20 1997-01-16 東芝セラミツクス株式会社 単結晶の製造方法
DE60041429D1 (de) 1999-03-17 2009-03-12 Shinetsu Handotai Kk Verfahren zur herstellung von silicium einkristallen
JP3609312B2 (ja) 2000-01-21 2005-01-12 住友重機械工業株式会社 水平磁界発生用超電導磁石装置
JP3781300B2 (ja) 2000-07-28 2006-05-31 信越半導体株式会社 半導体単結晶の製造方法及び半導体単結晶の製造装置
JP2004051475A (ja) * 2002-05-31 2004-02-19 Toshiba Corp 単結晶引上げ装置、超電導磁石および単結晶引上げ方法
JP4363078B2 (ja) 2003-04-28 2009-11-11 株式会社Ｓｕｍｃｏ 単結晶の製造方法
JP2007184383A (ja) * 2006-01-06 2007-07-19 Kobe Steel Ltd 磁場形成装置
WO2008146371A1 (ja) * 2007-05-30 2008-12-04 Sumco Corporation シリコン単結晶引上装置
JP5056603B2 (ja) * 2008-06-11 2012-10-24 株式会社Ｓｕｍｃｏ シリコン単結晶の引上げ方法及び該方法により引上げられたインゴットから得られたシリコン単結晶ウェーハ
CN201670889U (zh) 2009-12-10 2010-12-15 嘉兴市中科光电科技有限公司 一种磁极间距可调的mcz永磁场装置
CN101923591B (zh) * 2010-08-09 2012-04-04 西安理工大学 用于mcz单晶炉的非对称勾形磁场的三维优化设计方法
JP6436031B2 (ja) * 2015-09-18 2018-12-12 信越半導体株式会社 単結晶引き上げ装置、及び単結晶引き上げ方法
JP6620670B2 (ja) 2016-05-16 2019-12-18 信越半導体株式会社 単結晶引き上げ装置及び単結晶引き上げ方法
CN106191988A (zh) * 2016-08-25 2016-12-07 宁夏中晶半导体材料有限公司 一种用于mcz法拉制单晶硅的降氧工艺及装置
CN109811402A (zh) * 2017-11-22 2019-05-28 上海新昇半导体科技有限公司 一种拉晶系统和拉晶方法

Also Published As

Publication number Publication date
JPWO2022102251A1 (https=) 2022-05-19
TWI797764B (zh) 2023-04-01
KR20230070287A (ko) 2023-05-22
WO2022102251A1 (ja) 2022-05-19
KR102781133B1 (ko) 2025-03-12
DE112021005918T5 (de) 2023-08-31
US20230407523A1 (en) 2023-12-21
JP7687346B2 (ja) 2025-06-03
TW202223175A (zh) 2022-06-16
US12492489B2 (en) 2025-12-09

Similar Documents

Publication Publication Date Title
US20100101485A1 (en) Manufacturing method of silicon single crystal
CN108779577B (zh) 单晶硅的制造方法
KR102397842B1 (ko) 실리콘 단결정의 제조 방법 및 실리콘 단결정의 인상 장치
JP5228671B2 (ja) シリコン単結晶の育成方法
CN116917556A (zh) 单晶提拉装置及单晶提拉方法
KR102390791B1 (ko) 실리콘 단결정의 제조 방법
KR20200111799A (ko) 실리콘 단결정의 산소 농도 추정 방법 및 실리콘 단결정의 제조 방법
CN116438333A (zh) 单晶的制造方法、磁场产生装置及单晶制造装置
JP5056603B2 (ja) シリコン単結晶の引上げ方法及び該方法により引上げられたインゴットから得られたシリコン単結晶ウェーハ
JP2004189559A (ja) 単結晶成長方法
TWI784314B (zh) 單晶矽的製造方法
JP2000239096A (ja) シリコン単結晶の製造方法
JP5454625B2 (ja) シリコン単結晶の引上げ方法により引上げられたインゴットから得られたシリコン単結晶ウェーハ
JP2008189523A (ja) 単結晶の製造方法
JP7655351B2 (ja) 加熱装置、シリコン単結晶製造装置およびシリコン単結晶の製造方法
US20240076800A1 (en) Single crystal pulling apparatus and method for pulling single crystal
JP2009256206A (ja) 単結晶成長方法
JP2023086621A (ja) コイル、単結晶の製造装置用磁石、単結晶の製造装置および単結晶の製造方法
WO2022254885A1 (ja) シリコン単結晶の製造方法
WO2023223691A1 (ja) シリコン単結晶の育成方法、シリコンウェーハの製造方法、および単結晶引き上げ装置
JP2005306669A (ja) シリコン単結晶の引上げ装置及びその方法
JP2000119095A (ja) シリコン単結晶の製造方法およびその製造装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination