JPWO2022102251A1 - - Google Patents
Info
- Publication number
- JPWO2022102251A1 JPWO2022102251A1 JP2022561308A JP2022561308A JPWO2022102251A1 JP WO2022102251 A1 JPWO2022102251 A1 JP WO2022102251A1 JP 2022561308 A JP2022561308 A JP 2022561308A JP 2022561308 A JP2022561308 A JP 2022561308A JP WO2022102251 A1 JPWO2022102251 A1 JP WO2022102251A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F7/064—Circuit arrangements for actuating electromagnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F7/20—Electromagnets; Actuators including electromagnets without armatures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020186976 | 2020-11-10 | ||
| JP2020186976 | 2020-11-10 | ||
| PCT/JP2021/034733 WO2022102251A1 (ja) | 2020-11-10 | 2021-09-22 | 単結晶の製造方法、磁場発生装置及び単結晶製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022102251A1 true JPWO2022102251A1 (https=) | 2022-05-19 |
| JP7687346B2 JP7687346B2 (ja) | 2025-06-03 |
Family
ID=81601814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022561308A Active JP7687346B2 (ja) | 2020-11-10 | 2021-09-22 | 単結晶の製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12492489B2 (https=) |
| JP (1) | JP7687346B2 (https=) |
| KR (1) | KR102781133B1 (https=) |
| CN (1) | CN116438333A (https=) |
| DE (1) | DE112021005918T5 (https=) |
| TW (1) | TWI797764B (https=) |
| WO (1) | WO2022102251A1 (https=) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6424090A (en) * | 1987-07-20 | 1989-01-26 | Toshiba Ceramics Co | Method and apparatus for producing single crystal |
| JP2001203106A (ja) * | 2000-01-21 | 2001-07-27 | Sumitomo Heavy Ind Ltd | 水平磁界発生用超電導磁石装置 |
| JP2004051475A (ja) * | 2002-05-31 | 2004-02-19 | Toshiba Corp | 単結晶引上げ装置、超電導磁石および単結晶引上げ方法 |
| JP2007184383A (ja) * | 2006-01-06 | 2007-07-19 | Kobe Steel Ltd | 磁場形成装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2561072B2 (ja) | 1986-04-30 | 1996-12-04 | 東芝セラミツクス株式会社 | 単結晶の育成方法及びその装置 |
| DE60041429D1 (de) | 1999-03-17 | 2009-03-12 | Shinetsu Handotai Kk | Verfahren zur herstellung von silicium einkristallen |
| JP3781300B2 (ja) | 2000-07-28 | 2006-05-31 | 信越半導体株式会社 | 半導体単結晶の製造方法及び半導体単結晶の製造装置 |
| JP4363078B2 (ja) | 2003-04-28 | 2009-11-11 | 株式会社Ｓｕｍｃｏ | 単結晶の製造方法 |
| WO2008146371A1 (ja) * | 2007-05-30 | 2008-12-04 | Sumco Corporation | シリコン単結晶引上装置 |
| JP5056603B2 (ja) * | 2008-06-11 | 2012-10-24 | 株式会社Ｓｕｍｃｏ | シリコン単結晶の引上げ方法及び該方法により引上げられたインゴットから得られたシリコン単結晶ウェーハ |
| CN201670889U (zh) | 2009-12-10 | 2010-12-15 | 嘉兴市中科光电科技有限公司 | 一种磁极间距可调的mcz永磁场装置 |
| CN101923591B (zh) * | 2010-08-09 | 2012-04-04 | 西安理工大学 | 用于mcz单晶炉的非对称勾形磁场的三维优化设计方法 |
| JP6436031B2 (ja) * | 2015-09-18 | 2018-12-12 | 信越半導体株式会社 | 単結晶引き上げ装置、及び単結晶引き上げ方法 |
| JP6620670B2 (ja) | 2016-05-16 | 2019-12-18 | 信越半導体株式会社 | 単結晶引き上げ装置及び単結晶引き上げ方法 |
| CN106191988A (zh) * | 2016-08-25 | 2016-12-07 | 宁夏中晶半导体材料有限公司 | 一种用于mcz法拉制单晶硅的降氧工艺及装置 |
| CN109811402A (zh) * | 2017-11-22 | 2019-05-28 | 上海新昇半导体科技有限公司 | 一种拉晶系统和拉晶方法 |
-
2021
- 2021-09-22 KR KR1020237013398A patent/KR102781133B1/ko active Active
- 2021-09-22 JP JP2022561308A patent/JP7687346B2/ja active Active
- 2021-09-22 CN CN202180075806.5A patent/CN116438333A/zh active Pending
- 2021-09-22 US US18/036,094 patent/US12492489B2/en active Active
- 2021-09-22 WO PCT/JP2021/034733 patent/WO2022102251A1/ja not_active Ceased
- 2021-09-22 DE DE112021005918.1T patent/DE112021005918T5/de active Pending
- 2021-10-05 TW TW110137020A patent/TWI797764B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6424090A (en) * | 1987-07-20 | 1989-01-26 | Toshiba Ceramics Co | Method and apparatus for producing single crystal |
| JP2001203106A (ja) * | 2000-01-21 | 2001-07-27 | Sumitomo Heavy Ind Ltd | 水平磁界発生用超電導磁石装置 |
| JP2004051475A (ja) * | 2002-05-31 | 2004-02-19 | Toshiba Corp | 単結晶引上げ装置、超電導磁石および単結晶引上げ方法 |
| JP2007184383A (ja) * | 2006-01-06 | 2007-07-19 | Kobe Steel Ltd | 磁場形成装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI797764B (zh) | 2023-04-01 |
| KR20230070287A (ko) | 2023-05-22 |
| WO2022102251A1 (ja) | 2022-05-19 |
| CN116438333A (zh) | 2023-07-14 |
| KR102781133B1 (ko) | 2025-03-12 |
| DE112021005918T5 (de) | 2023-08-31 |
| US20230407523A1 (en) | 2023-12-21 |
| JP7687346B2 (ja) | 2025-06-03 |
| TW202223175A (zh) | 2022-06-16 |
| US12492489B2 (en) | 2025-12-09 |
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