JPS6424090A - Method and apparatus for producing single crystal - Google Patents
Method and apparatus for producing single crystalInfo
- Publication number
- JPS6424090A JPS6424090A JP18039287A JP18039287A JPS6424090A JP S6424090 A JPS6424090 A JP S6424090A JP 18039287 A JP18039287 A JP 18039287A JP 18039287 A JP18039287 A JP 18039287A JP S6424090 A JPS6424090 A JP S6424090A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- single crystal
- lines
- center line
- liquid surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To increase the concn. of oxygen in a single crystal without lowering the pulling up speed of the single crystal by impressing rotationally symmetrical groups of lines of magnetic induction to the melt of the crystal component in a cylindrical crucible in such a manner that the rotationally symmetrical axis thereof deviates relatively in the direction perpendicular to the melt surface. CONSTITUTION:The silicon melt 1 in the crucible 2 is heated by a heater 6 and the single crystal 4 is pulled up from the melt 1 by a wire 5. A pair of flat plate-shaped superconducting magnetic field coils 8 are disposed as magnetic field generating means to face each other on both sides of a heat insulating member 7 and the center line 10 of the coils 8 is aligned to the liquid surface 11 of the melt 1. Since convections 23, 25 are generated in the melt 1 by heating with the heater 6, the flow of the convections 23, 25 is suppressed by impressing the lines 10 of magnetic induction thereto. However, the liquid surface 11 lowers with an increase in the single crystal 4 and the straight line lines 12 of magnetic induction passing the neighborhood of the center line 10 decrease in the angle of intersection with the flow 20 along the center line 10. The coils 8 are, therefore, moved relatively with the liquid surface 11 to intersect the lines 12 of magnetic induction with the flow 20 as well in such a manner that the center line 10 is positioned relatively lower than the liquid surface 11.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62180392A JP2572070B2 (en) | 1987-07-20 | 1987-07-20 | Single crystal manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62180392A JP2572070B2 (en) | 1987-07-20 | 1987-07-20 | Single crystal manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6424090A true JPS6424090A (en) | 1989-01-26 |
JP2572070B2 JP2572070B2 (en) | 1997-01-16 |
Family
ID=16082433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62180392A Expired - Fee Related JP2572070B2 (en) | 1987-07-20 | 1987-07-20 | Single crystal manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2572070B2 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0474789A (en) * | 1990-07-13 | 1992-03-10 | Shin Etsu Handotai Co Ltd | Method for pulling up semiconductor single crystal |
JPH09188590A (en) * | 1995-12-29 | 1997-07-22 | Shin Etsu Handotai Co Ltd | Production of single crystal and apparatus therefor |
WO2006025238A1 (en) | 2004-09-02 | 2006-03-09 | Sumco Corporation | Magnetic field application method of pulling silicon single crystal |
JP2007031260A (en) * | 2005-07-26 | 2007-02-08 | Siltron Inc | Method and apparatus for growing high quality silicon single crystal ingot, silicon single crystal ingot grown thereby and wafer produced from the single crystal ingot |
JP2010064928A (en) * | 2008-09-11 | 2010-03-25 | Covalent Materials Corp | Apparatus and method for pulling silicon single crystal |
WO2022102251A1 (en) * | 2020-11-10 | 2022-05-19 | 株式会社Sumco | Single crystal production method, magnetic field generator, and single crystal production device |
US11661280B2 (en) | 2018-04-25 | 2023-05-30 | Autostore Technology AS | Container handling vehicle with first and second sections and with battery in second section |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6027682A (en) * | 1983-07-26 | 1985-02-12 | Toshiba Corp | Single crystal pulling apparatus |
JPS6033292A (en) * | 1983-07-29 | 1985-02-20 | Toshiba Ceramics Co Ltd | Preparation of single crystal semiconductor |
JPS6036392A (en) * | 1983-08-05 | 1985-02-25 | Toshiba Corp | Apparatus for pulling single crystal |
JPS6051691A (en) * | 1983-08-31 | 1985-03-23 | Toshiba Corp | Growing apparatus of single crystal semiconductor |
JPS61186282A (en) * | 1985-02-14 | 1986-08-19 | Toshiba Corp | Production of single crystal |
JPS61286294A (en) * | 1985-06-07 | 1986-12-16 | Toshiba Corp | Pulling device for single crystal |
JPS621357A (en) * | 1985-06-27 | 1987-01-07 | Toshiba Corp | Reader |
JPS6270286A (en) * | 1985-09-24 | 1987-03-31 | Toshiba Corp | Apparatus for producting single crystal |
JPS6278184A (en) * | 1985-09-30 | 1987-04-10 | Toshiba Corp | Single crystal growth apparatus |
JPS6360191A (en) * | 1986-08-29 | 1988-03-16 | Sumitomo Metal Ind Ltd | Crystal growth method |
-
1987
- 1987-07-20 JP JP62180392A patent/JP2572070B2/en not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6027682A (en) * | 1983-07-26 | 1985-02-12 | Toshiba Corp | Single crystal pulling apparatus |
JPS6033292A (en) * | 1983-07-29 | 1985-02-20 | Toshiba Ceramics Co Ltd | Preparation of single crystal semiconductor |
JPS6036392A (en) * | 1983-08-05 | 1985-02-25 | Toshiba Corp | Apparatus for pulling single crystal |
JPS6051691A (en) * | 1983-08-31 | 1985-03-23 | Toshiba Corp | Growing apparatus of single crystal semiconductor |
JPS61186282A (en) * | 1985-02-14 | 1986-08-19 | Toshiba Corp | Production of single crystal |
JPS61286294A (en) * | 1985-06-07 | 1986-12-16 | Toshiba Corp | Pulling device for single crystal |
JPS621357A (en) * | 1985-06-27 | 1987-01-07 | Toshiba Corp | Reader |
JPS6270286A (en) * | 1985-09-24 | 1987-03-31 | Toshiba Corp | Apparatus for producting single crystal |
JPS6278184A (en) * | 1985-09-30 | 1987-04-10 | Toshiba Corp | Single crystal growth apparatus |
JPS6360191A (en) * | 1986-08-29 | 1988-03-16 | Sumitomo Metal Ind Ltd | Crystal growth method |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0474789A (en) * | 1990-07-13 | 1992-03-10 | Shin Etsu Handotai Co Ltd | Method for pulling up semiconductor single crystal |
JPH09188590A (en) * | 1995-12-29 | 1997-07-22 | Shin Etsu Handotai Co Ltd | Production of single crystal and apparatus therefor |
WO2006025238A1 (en) | 2004-09-02 | 2006-03-09 | Sumco Corporation | Magnetic field application method of pulling silicon single crystal |
JP2007031260A (en) * | 2005-07-26 | 2007-02-08 | Siltron Inc | Method and apparatus for growing high quality silicon single crystal ingot, silicon single crystal ingot grown thereby and wafer produced from the single crystal ingot |
JP2010064928A (en) * | 2008-09-11 | 2010-03-25 | Covalent Materials Corp | Apparatus and method for pulling silicon single crystal |
US11661280B2 (en) | 2018-04-25 | 2023-05-30 | Autostore Technology AS | Container handling vehicle with first and second sections and with battery in second section |
WO2022102251A1 (en) * | 2020-11-10 | 2022-05-19 | 株式会社Sumco | Single crystal production method, magnetic field generator, and single crystal production device |
Also Published As
Publication number | Publication date |
---|---|
JP2572070B2 (en) | 1997-01-16 |
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