JPS6424090A - Method and apparatus for producing single crystal - Google Patents

Method and apparatus for producing single crystal

Info

Publication number
JPS6424090A
JPS6424090A JP18039287A JP18039287A JPS6424090A JP S6424090 A JPS6424090 A JP S6424090A JP 18039287 A JP18039287 A JP 18039287A JP 18039287 A JP18039287 A JP 18039287A JP S6424090 A JPS6424090 A JP S6424090A
Authority
JP
Japan
Prior art keywords
melt
single crystal
lines
center line
liquid surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18039287A
Other languages
Japanese (ja)
Other versions
JP2572070B2 (en
Inventor
Mitsuhiro Yamato
Takayoshi Higuchi
Shinichiro Takasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=16082433&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS6424090(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP62180392A priority Critical patent/JP2572070B2/en
Publication of JPS6424090A publication Critical patent/JPS6424090A/en
Application granted granted Critical
Publication of JP2572070B2 publication Critical patent/JP2572070B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To increase the concn. of oxygen in a single crystal without lowering the pulling up speed of the single crystal by impressing rotationally symmetrical groups of lines of magnetic induction to the melt of the crystal component in a cylindrical crucible in such a manner that the rotationally symmetrical axis thereof deviates relatively in the direction perpendicular to the melt surface. CONSTITUTION:The silicon melt 1 in the crucible 2 is heated by a heater 6 and the single crystal 4 is pulled up from the melt 1 by a wire 5. A pair of flat plate-shaped superconducting magnetic field coils 8 are disposed as magnetic field generating means to face each other on both sides of a heat insulating member 7 and the center line 10 of the coils 8 is aligned to the liquid surface 11 of the melt 1. Since convections 23, 25 are generated in the melt 1 by heating with the heater 6, the flow of the convections 23, 25 is suppressed by impressing the lines 10 of magnetic induction thereto. However, the liquid surface 11 lowers with an increase in the single crystal 4 and the straight line lines 12 of magnetic induction passing the neighborhood of the center line 10 decrease in the angle of intersection with the flow 20 along the center line 10. The coils 8 are, therefore, moved relatively with the liquid surface 11 to intersect the lines 12 of magnetic induction with the flow 20 as well in such a manner that the center line 10 is positioned relatively lower than the liquid surface 11.
JP62180392A 1987-07-20 1987-07-20 Single crystal manufacturing method Expired - Fee Related JP2572070B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62180392A JP2572070B2 (en) 1987-07-20 1987-07-20 Single crystal manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62180392A JP2572070B2 (en) 1987-07-20 1987-07-20 Single crystal manufacturing method

Publications (2)

Publication Number Publication Date
JPS6424090A true JPS6424090A (en) 1989-01-26
JP2572070B2 JP2572070B2 (en) 1997-01-16

Family

ID=16082433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62180392A Expired - Fee Related JP2572070B2 (en) 1987-07-20 1987-07-20 Single crystal manufacturing method

Country Status (1)

Country Link
JP (1) JP2572070B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0474789A (en) * 1990-07-13 1992-03-10 Shin Etsu Handotai Co Ltd Method for pulling up semiconductor single crystal
JPH09188590A (en) * 1995-12-29 1997-07-22 Shin Etsu Handotai Co Ltd Production of single crystal and apparatus therefor
WO2006025238A1 (en) 2004-09-02 2006-03-09 Sumco Corporation Magnetic field application method of pulling silicon single crystal
JP2007031260A (en) * 2005-07-26 2007-02-08 Siltron Inc Method and apparatus for growing high quality silicon single crystal ingot, silicon single crystal ingot grown thereby and wafer produced from the single crystal ingot
JP2010064928A (en) * 2008-09-11 2010-03-25 Covalent Materials Corp Apparatus and method for pulling silicon single crystal
WO2022102251A1 (en) * 2020-11-10 2022-05-19 株式会社Sumco Single crystal production method, magnetic field generator, and single crystal production device
US11661280B2 (en) 2018-04-25 2023-05-30 Autostore Technology AS Container handling vehicle with first and second sections and with battery in second section

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027682A (en) * 1983-07-26 1985-02-12 Toshiba Corp Single crystal pulling apparatus
JPS6033292A (en) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd Preparation of single crystal semiconductor
JPS6036392A (en) * 1983-08-05 1985-02-25 Toshiba Corp Apparatus for pulling single crystal
JPS6051691A (en) * 1983-08-31 1985-03-23 Toshiba Corp Growing apparatus of single crystal semiconductor
JPS61186282A (en) * 1985-02-14 1986-08-19 Toshiba Corp Production of single crystal
JPS61286294A (en) * 1985-06-07 1986-12-16 Toshiba Corp Pulling device for single crystal
JPS621357A (en) * 1985-06-27 1987-01-07 Toshiba Corp Reader
JPS6270286A (en) * 1985-09-24 1987-03-31 Toshiba Corp Apparatus for producting single crystal
JPS6278184A (en) * 1985-09-30 1987-04-10 Toshiba Corp Single crystal growth apparatus
JPS6360191A (en) * 1986-08-29 1988-03-16 Sumitomo Metal Ind Ltd Crystal growth method

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027682A (en) * 1983-07-26 1985-02-12 Toshiba Corp Single crystal pulling apparatus
JPS6033292A (en) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd Preparation of single crystal semiconductor
JPS6036392A (en) * 1983-08-05 1985-02-25 Toshiba Corp Apparatus for pulling single crystal
JPS6051691A (en) * 1983-08-31 1985-03-23 Toshiba Corp Growing apparatus of single crystal semiconductor
JPS61186282A (en) * 1985-02-14 1986-08-19 Toshiba Corp Production of single crystal
JPS61286294A (en) * 1985-06-07 1986-12-16 Toshiba Corp Pulling device for single crystal
JPS621357A (en) * 1985-06-27 1987-01-07 Toshiba Corp Reader
JPS6270286A (en) * 1985-09-24 1987-03-31 Toshiba Corp Apparatus for producting single crystal
JPS6278184A (en) * 1985-09-30 1987-04-10 Toshiba Corp Single crystal growth apparatus
JPS6360191A (en) * 1986-08-29 1988-03-16 Sumitomo Metal Ind Ltd Crystal growth method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0474789A (en) * 1990-07-13 1992-03-10 Shin Etsu Handotai Co Ltd Method for pulling up semiconductor single crystal
JPH09188590A (en) * 1995-12-29 1997-07-22 Shin Etsu Handotai Co Ltd Production of single crystal and apparatus therefor
WO2006025238A1 (en) 2004-09-02 2006-03-09 Sumco Corporation Magnetic field application method of pulling silicon single crystal
JP2007031260A (en) * 2005-07-26 2007-02-08 Siltron Inc Method and apparatus for growing high quality silicon single crystal ingot, silicon single crystal ingot grown thereby and wafer produced from the single crystal ingot
JP2010064928A (en) * 2008-09-11 2010-03-25 Covalent Materials Corp Apparatus and method for pulling silicon single crystal
US11661280B2 (en) 2018-04-25 2023-05-30 Autostore Technology AS Container handling vehicle with first and second sections and with battery in second section
WO2022102251A1 (en) * 2020-11-10 2022-05-19 株式会社Sumco Single crystal production method, magnetic field generator, and single crystal production device

Also Published As

Publication number Publication date
JP2572070B2 (en) 1997-01-16

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