JPS6424090A - Method and apparatus for producing single crystal - Google Patents

Method and apparatus for producing single crystal

Info

Publication number
JPS6424090A
JPS6424090A JP18039287A JP18039287A JPS6424090A JP S6424090 A JPS6424090 A JP S6424090A JP 18039287 A JP18039287 A JP 18039287A JP 18039287 A JP18039287 A JP 18039287A JP S6424090 A JPS6424090 A JP S6424090A
Authority
JP
Japan
Prior art keywords
melt
single crystal
lines
center line
liquid surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18039287A
Other languages
English (en)
Other versions
JP2572070B2 (ja
Inventor
Mitsuhiro Yamato
Takayoshi Higuchi
Shinichiro Takasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=16082433&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS6424090(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP62180392A priority Critical patent/JP2572070B2/ja
Publication of JPS6424090A publication Critical patent/JPS6424090A/ja
Application granted granted Critical
Publication of JP2572070B2 publication Critical patent/JP2572070B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP62180392A 1987-07-20 1987-07-20 単結晶の製造方法 Expired - Fee Related JP2572070B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62180392A JP2572070B2 (ja) 1987-07-20 1987-07-20 単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62180392A JP2572070B2 (ja) 1987-07-20 1987-07-20 単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS6424090A true JPS6424090A (en) 1989-01-26
JP2572070B2 JP2572070B2 (ja) 1997-01-16

Family

ID=16082433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62180392A Expired - Fee Related JP2572070B2 (ja) 1987-07-20 1987-07-20 単結晶の製造方法

Country Status (1)

Country Link
JP (1) JP2572070B2 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0474789A (ja) * 1990-07-13 1992-03-10 Shin Etsu Handotai Co Ltd 半導体単結晶引上方法
JPH09188590A (ja) * 1995-12-29 1997-07-22 Shin Etsu Handotai Co Ltd 単結晶の製造方法および装置
WO2006025238A1 (ja) 2004-09-02 2006-03-09 Sumco Corporation 磁場印加式シリコン単結晶の引上げ方法
JP2007031260A (ja) * 2005-07-26 2007-02-08 Siltron Inc 高品質シリコン単結晶インゴット製造方法，成長装置及び前記方法及び装置から製造されたインゴット，ウエハ
JP2010064928A (ja) * 2008-09-11 2010-03-25 Covalent Materials Corp シリコン単結晶引上げ装置及びシリコン単結晶引上げ方法
WO2022102251A1 (ja) * 2020-11-10 2022-05-19 株式会社Sumco 単結晶の製造方法、磁場発生装置及び単結晶製造装置
US11661280B2 (en) 2018-04-25 2023-05-30 Autostore Technology AS Container handling vehicle with first and second sections and with battery in second section

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027682A (ja) * 1983-07-26 1985-02-12 Toshiba Corp 単結晶引上装置
JPS6033292A (ja) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd 単結晶半導体の製造方法
JPS6036392A (ja) * 1983-08-05 1985-02-25 Toshiba Corp 単結晶引上装置
JPS6051691A (ja) * 1983-08-31 1985-03-23 Toshiba Corp 単結晶半導体育成装置
JPS61186282A (ja) * 1985-02-14 1986-08-19 Toshiba Corp 単結晶の製造方法
JPS61286294A (ja) * 1985-06-07 1986-12-16 Toshiba Corp 単結晶引上装置
JPS621357A (ja) * 1985-06-27 1987-01-07 Toshiba Corp 読取装置
JPS6270286A (ja) * 1985-09-24 1987-03-31 Toshiba Corp 単結晶製造装置
JPS6278184A (ja) * 1985-09-30 1987-04-10 Toshiba Corp 単結晶育成装置
JPS6360191A (ja) * 1986-08-29 1988-03-16 Sumitomo Metal Ind Ltd 結晶成長方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027682A (ja) * 1983-07-26 1985-02-12 Toshiba Corp 単結晶引上装置
JPS6033292A (ja) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd 単結晶半導体の製造方法
JPS6036392A (ja) * 1983-08-05 1985-02-25 Toshiba Corp 単結晶引上装置
JPS6051691A (ja) * 1983-08-31 1985-03-23 Toshiba Corp 単結晶半導体育成装置
JPS61186282A (ja) * 1985-02-14 1986-08-19 Toshiba Corp 単結晶の製造方法
JPS61286294A (ja) * 1985-06-07 1986-12-16 Toshiba Corp 単結晶引上装置
JPS621357A (ja) * 1985-06-27 1987-01-07 Toshiba Corp 読取装置
JPS6270286A (ja) * 1985-09-24 1987-03-31 Toshiba Corp 単結晶製造装置
JPS6278184A (ja) * 1985-09-30 1987-04-10 Toshiba Corp 単結晶育成装置
JPS6360191A (ja) * 1986-08-29 1988-03-16 Sumitomo Metal Ind Ltd 結晶成長方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0474789A (ja) * 1990-07-13 1992-03-10 Shin Etsu Handotai Co Ltd 半導体単結晶引上方法
JPH09188590A (ja) * 1995-12-29 1997-07-22 Shin Etsu Handotai Co Ltd 単結晶の製造方法および装置
WO2006025238A1 (ja) 2004-09-02 2006-03-09 Sumco Corporation 磁場印加式シリコン単結晶の引上げ方法
JP2007031260A (ja) * 2005-07-26 2007-02-08 Siltron Inc 高品質シリコン単結晶インゴット製造方法，成長装置及び前記方法及び装置から製造されたインゴット，ウエハ
JP2010064928A (ja) * 2008-09-11 2010-03-25 Covalent Materials Corp シリコン単結晶引上げ装置及びシリコン単結晶引上げ方法
US11661280B2 (en) 2018-04-25 2023-05-30 Autostore Technology AS Container handling vehicle with first and second sections and with battery in second section
WO2022102251A1 (ja) * 2020-11-10 2022-05-19 株式会社Sumco 単結晶の製造方法、磁場発生装置及び単結晶製造装置

Also Published As

Publication number Publication date
JP2572070B2 (ja) 1997-01-16

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