DE112021005918T5 - Einkristallherstellungsverfahren, magnetfeldgenerator undeinkristallherstellungsvorrichtung - Google Patents
Einkristallherstellungsverfahren, magnetfeldgenerator undeinkristallherstellungsvorrichtung Download PDFInfo
- Publication number
- DE112021005918T5 DE112021005918T5 DE112021005918.1T DE112021005918T DE112021005918T5 DE 112021005918 T5 DE112021005918 T5 DE 112021005918T5 DE 112021005918 T DE112021005918 T DE 112021005918T DE 112021005918 T5 DE112021005918 T5 DE 112021005918T5
- Authority
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- Germany
- Prior art keywords
- magnetic field
- axis
- coil
- crucible
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 163
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 239000000155 melt Substances 0.000 claims abstract description 59
- 238000009826 distribution Methods 0.000 claims abstract description 49
- 230000007423 decrease Effects 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 38
- 230000007246 mechanism Effects 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 60
- 239000001301 oxygen Substances 0.000 abstract description 60
- 229910052760 oxygen Inorganic materials 0.000 abstract description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 83
- 229910052710 silicon Inorganic materials 0.000 description 83
- 239000010703 silicon Substances 0.000 description 82
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 50
- 239000010453 quartz Substances 0.000 description 47
- 230000008018 melting Effects 0.000 description 14
- 238000002844 melting Methods 0.000 description 14
- 230000008859 change Effects 0.000 description 13
- 230000014509 gene expression Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 238000004804 winding Methods 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 210000003298 dental enamel Anatomy 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F7/064—Circuit arrangements for actuating electromagnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F7/20—Electromagnets; Actuators including electromagnets without armatures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020186976 | 2020-11-10 | ||
| JP2020-186976 | 2020-11-10 | ||
| PCT/JP2021/034733 WO2022102251A1 (ja) | 2020-11-10 | 2021-09-22 | 単結晶の製造方法、磁場発生装置及び単結晶製造装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112021005918T5 true DE112021005918T5 (de) | 2023-08-31 |
Family
ID=81601814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112021005918.1T Pending DE112021005918T5 (de) | 2020-11-10 | 2021-09-22 | Einkristallherstellungsverfahren, magnetfeldgenerator undeinkristallherstellungsvorrichtung |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12492489B2 (https=) |
| JP (1) | JP7687346B2 (https=) |
| KR (1) | KR102781133B1 (https=) |
| CN (1) | CN116438333A (https=) |
| DE (1) | DE112021005918T5 (https=) |
| TW (1) | TWI797764B (https=) |
| WO (1) | WO2022102251A1 (https=) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62256787A (ja) | 1986-04-30 | 1987-11-09 | Toshiba Ceramics Co Ltd | 単結晶の育成方法及びその装置 |
| JP2017206396A (ja) | 2016-05-16 | 2017-11-24 | 信越半導体株式会社 | 単結晶引き上げ装置及び単結晶引き上げ方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2572070B2 (ja) * | 1987-07-20 | 1997-01-16 | 東芝セラミツクス株式会社 | 単結晶の製造方法 |
| DE60041429D1 (de) | 1999-03-17 | 2009-03-12 | Shinetsu Handotai Kk | Verfahren zur herstellung von silicium einkristallen |
| JP3609312B2 (ja) | 2000-01-21 | 2005-01-12 | 住友重機械工業株式会社 | 水平磁界発生用超電導磁石装置 |
| JP3781300B2 (ja) | 2000-07-28 | 2006-05-31 | 信越半導体株式会社 | 半導体単結晶の製造方法及び半導体単結晶の製造装置 |
| JP2004051475A (ja) * | 2002-05-31 | 2004-02-19 | Toshiba Corp | 単結晶引上げ装置、超電導磁石および単結晶引上げ方法 |
| JP4363078B2 (ja) | 2003-04-28 | 2009-11-11 | 株式会社Ｓｕｍｃｏ | 単結晶の製造方法 |
| JP2007184383A (ja) * | 2006-01-06 | 2007-07-19 | Kobe Steel Ltd | 磁場形成装置 |
| WO2008146371A1 (ja) * | 2007-05-30 | 2008-12-04 | Sumco Corporation | シリコン単結晶引上装置 |
| JP5056603B2 (ja) * | 2008-06-11 | 2012-10-24 | 株式会社Ｓｕｍｃｏ | シリコン単結晶の引上げ方法及び該方法により引上げられたインゴットから得られたシリコン単結晶ウェーハ |
| CN201670889U (zh) | 2009-12-10 | 2010-12-15 | 嘉兴市中科光电科技有限公司 | 一种磁极间距可调的mcz永磁场装置 |
| CN101923591B (zh) * | 2010-08-09 | 2012-04-04 | 西安理工大学 | 用于mcz单晶炉的非对称勾形磁场的三维优化设计方法 |
| JP6436031B2 (ja) * | 2015-09-18 | 2018-12-12 | 信越半導体株式会社 | 単結晶引き上げ装置、及び単結晶引き上げ方法 |
| CN106191988A (zh) * | 2016-08-25 | 2016-12-07 | 宁夏中晶半导体材料有限公司 | 一种用于mcz法拉制单晶硅的降氧工艺及装置 |
| CN109811402A (zh) * | 2017-11-22 | 2019-05-28 | 上海新昇半导体科技有限公司 | 一种拉晶系统和拉晶方法 |
-
2021
- 2021-09-22 KR KR1020237013398A patent/KR102781133B1/ko active Active
- 2021-09-22 JP JP2022561308A patent/JP7687346B2/ja active Active
- 2021-09-22 CN CN202180075806.5A patent/CN116438333A/zh active Pending
- 2021-09-22 US US18/036,094 patent/US12492489B2/en active Active
- 2021-09-22 WO PCT/JP2021/034733 patent/WO2022102251A1/ja not_active Ceased
- 2021-09-22 DE DE112021005918.1T patent/DE112021005918T5/de active Pending
- 2021-10-05 TW TW110137020A patent/TWI797764B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62256787A (ja) | 1986-04-30 | 1987-11-09 | Toshiba Ceramics Co Ltd | 単結晶の育成方法及びその装置 |
| JP2017206396A (ja) | 2016-05-16 | 2017-11-24 | 信越半導体株式会社 | 単結晶引き上げ装置及び単結晶引き上げ方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2022102251A1 (https=) | 2022-05-19 |
| TWI797764B (zh) | 2023-04-01 |
| KR20230070287A (ko) | 2023-05-22 |
| WO2022102251A1 (ja) | 2022-05-19 |
| CN116438333A (zh) | 2023-07-14 |
| KR102781133B1 (ko) | 2025-03-12 |
| US20230407523A1 (en) | 2023-12-21 |
| JP7687346B2 (ja) | 2025-06-03 |
| TW202223175A (zh) | 2022-06-16 |
| US12492489B2 (en) | 2025-12-09 |
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| R012 | Request for examination validly filed | ||
| R016 | Response to examination communication |