TWI789048B - 基板處理方法、基板處理系統及電腦可讀取記憶媒體 - Google Patents

基板處理方法、基板處理系統及電腦可讀取記憶媒體 Download PDF

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TWI789048B
TWI789048B TW110137697A TW110137697A TWI789048B TW I789048 B TWI789048 B TW I789048B TW 110137697 A TW110137697 A TW 110137697A TW 110137697 A TW110137697 A TW 110137697A TW I789048 B TWI789048 B TW I789048B
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Taiwan
Prior art keywords
metal
heat treatment
processing chamber
substrate
wafer
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TW110137697A
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English (en)
Chinese (zh)
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TW202205498A (zh
Inventor
佐野要平
川上真一路
榎本正志
鹽澤崇博
吉田圭佑
鬼塚智也
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日商東京威力科創股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW110137697A 2016-12-08 2017-12-04 基板處理方法、基板處理系統及電腦可讀取記憶媒體 TWI789048B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-238138 2016-12-08
JP2016238138A JP6781031B2 (ja) 2016-12-08 2016-12-08 基板処理方法及び熱処理装置

Publications (2)

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TW202205498A TW202205498A (zh) 2022-02-01
TWI789048B true TWI789048B (zh) 2023-01-01

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TW110137697A TWI789048B (zh) 2016-12-08 2017-12-04 基板處理方法、基板處理系統及電腦可讀取記憶媒體
TW106142318A TWI746716B (zh) 2016-12-08 2017-12-04 基板處理方法及熱處理裝置

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US (1) US10656526B2 (cg-RX-API-DMAC10.html)
JP (1) JP6781031B2 (cg-RX-API-DMAC10.html)
KR (4) KR102436241B1 (cg-RX-API-DMAC10.html)
CN (2) CN108183068B (cg-RX-API-DMAC10.html)
TW (2) TWI789048B (cg-RX-API-DMAC10.html)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170048787A (ko) * 2015-10-27 2017-05-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US10535538B2 (en) * 2017-01-26 2020-01-14 Gary Hillman System and method for heat treatment of substrates
US10274847B2 (en) 2017-09-19 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Humidity control in EUV lithography
JP7166089B2 (ja) * 2018-06-29 2022-11-07 東京エレクトロン株式会社 基板処理装置、基板処理システムおよび基板処理方法
TWI820189B (zh) * 2018-08-30 2023-11-01 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
JP7129309B2 (ja) * 2018-10-16 2022-09-01 東京エレクトロン株式会社 基板処理装置、基板処理方法、及び記憶媒体
KR102955829B1 (ko) 2018-11-14 2026-04-23 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
CN120762258A (zh) 2018-12-20 2025-10-10 朗姆研究公司 抗蚀剂的干式显影
KR102666133B1 (ko) * 2019-01-14 2024-05-17 삼성전자주식회사 초임계 건조 장치 및 그를 이용한 기판 건조방법
WO2020149903A1 (en) 2019-01-18 2020-07-23 Applied Materials, Inc. A film structure for electric field guided photoresist patterning process
JP7162541B2 (ja) * 2019-01-22 2022-10-28 東京エレクトロン株式会社 基板処理装置、及び基板処理方法、及び記憶媒体
JP7208813B2 (ja) * 2019-02-08 2023-01-19 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7242354B2 (ja) * 2019-03-13 2023-03-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
TWI910974B (zh) 2019-06-26 2026-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
TWI849159B (zh) 2019-06-28 2024-07-21 美商蘭姆研究公司 光阻膜的乾式腔室清潔
US12601974B2 (en) * 2019-06-28 2026-04-14 Lam Research Corporation Bake strategies to enhance lithographic performance of metal-containing resist
JP7308671B2 (ja) * 2019-07-03 2023-07-14 東京エレクトロン株式会社 基板熱処理装置、基板熱処理方法及び記憶媒体
CN112289701B (zh) * 2019-07-22 2025-12-19 东京毅力科创株式会社 热处理装置和热处理方法
JP7359680B2 (ja) 2019-07-22 2023-10-11 東京エレクトロン株式会社 熱処理装置及び処理方法
US11626285B2 (en) * 2019-09-10 2023-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device
JP7499106B2 (ja) * 2019-10-17 2024-06-13 東京エレクトロン株式会社 基板処理装置、基板処理方法、及びプログラム
KR102357066B1 (ko) * 2019-10-31 2022-02-03 세메스 주식회사 기판 처리 장치
US12506004B2 (en) * 2019-12-02 2025-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and semiconductor device manufacturing tool
CN114200776A (zh) 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
EP4100793A4 (en) * 2020-02-04 2024-03-13 Lam Research Corporation POST APPLICATION/EXPOSURE TREATMENTS TO IMPROVE THE DRY DEVELOPMENT PERFORMANCE OF METAL-CONTAINING EUV RESIST
US11429026B2 (en) 2020-03-20 2022-08-30 Applied Materials, Inc. Lithography process window enhancement for photoresist patterning
US12085858B2 (en) 2020-03-20 2024-09-10 Applied Materials, Inc. Photoresist patterning process
TWI885087B (zh) * 2020-03-24 2025-06-01 日商東京威力科創股份有限公司 熱處理裝置及熱處理方法
CN115362414A (zh) 2020-04-03 2022-11-18 朗姆研究公司 用于增强euv光刻性能的暴露前光致抗蚀剂固化
JP2023530299A (ja) 2020-06-22 2023-07-14 ラム リサーチ コーポレーション 金属含有フォトレジスト堆積のための表面改質
JP7413164B2 (ja) * 2020-06-26 2024-01-15 東京エレクトロン株式会社 熱処理ユニット、基板処理装置、熱処理方法、及び記憶媒体
KR102601038B1 (ko) 2020-07-07 2023-11-09 램 리써치 코포레이션 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스
KR102673863B1 (ko) 2020-11-13 2024-06-11 램 리써치 코포레이션 포토레지스트의 건식 제거를 위한 프로세스 툴
KR20250142946A (ko) 2020-12-08 2025-09-30 램 리써치 코포레이션 유기 증기를 사용한 포토레지스트 현상
KR102622987B1 (ko) * 2020-12-10 2024-01-11 세메스 주식회사 기판 처리 장치 및 이에 제공되는 필러 부재
EP4291954A1 (en) 2021-02-15 2023-12-20 Applied Materials, Inc. Apparatus for post exposure bake of photoresist
US11815816B2 (en) 2021-02-15 2023-11-14 Applied Materials, Inc. Apparatus for post exposure bake of photoresist
WO2023276723A1 (ja) * 2021-06-30 2023-01-05 東京エレクトロン株式会社 基板処理装置及び基板処理方法
CN116097399A (zh) * 2021-09-06 2023-05-09 东京毅力科创株式会社 热处理装置、热处理方法以及存储介质
JP2023177658A (ja) 2022-06-02 2023-12-14 東京エレクトロン株式会社 熱処理装置、熱処理方法及び記憶媒体
US12504692B2 (en) 2022-07-01 2025-12-23 Lam Research Corporation Cyclic development of metal oxide based photoresist for etch stop deterrence
KR20240049978A (ko) * 2022-10-11 2024-04-18 삼성전자주식회사 기판 처리 장치
US12420316B2 (en) * 2022-11-07 2025-09-23 Samsung Electronics Co., Ltd. Substrate processing apparatus and substrate processing method
JP7565390B2 (ja) * 2023-01-17 2024-10-10 株式会社Ｓｃｒｅｅｎホールディングス 加熱装置および加熱方法
EP4681251A1 (en) 2023-03-17 2026-01-21 LAM Research Corporation Integration of dry development and etch processes for euv patterning in a single process chamber
JP2024152282A (ja) 2023-04-14 2024-10-25 東京エレクトロン株式会社 熱処理方法、熱処理装置及びコンピュータ記憶媒体
KR20250034920A (ko) 2023-07-27 2025-03-11 램 리써치 코포레이션 금속-함유 포토레지스트에 대한 올-인-원 건식 현상

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6368776B1 (en) * 1998-03-18 2002-04-09 Tokyo Electron Limited Treatment apparatus and treatment method
TW201527872A (zh) * 2013-08-22 2015-07-16 因普利亞公司 以有機金屬溶液為主之高解析度圖案化組合物

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW464944B (en) * 1997-01-16 2001-11-21 Tokyo Electron Ltd Baking apparatus and baking method
JPH11274059A (ja) * 1998-03-18 1999-10-08 Tokyo Electron Ltd 露光処理後の加熱方法及び加熱装置
US20020011216A1 (en) * 1999-06-04 2002-01-31 Tue Nguyen Integral susceptor-wall reactor system and method
JP3989221B2 (ja) * 2001-10-25 2007-10-10 東京エレクトロン株式会社 熱処理装置および熱処理方法
JP4293333B2 (ja) * 2002-07-18 2009-07-08 東京エレクトロン株式会社 基板処理の不具合検出方法及び処理装置
JP2006066749A (ja) * 2004-08-30 2006-03-09 Renesas Technology Corp 半導体集積回路装置の製造方法
JP2007059633A (ja) * 2005-08-24 2007-03-08 Tokyo Electron Ltd 基板加熱装置及び基板加熱方法
JP2008198739A (ja) * 2007-02-09 2008-08-28 Tokyo Electron Ltd 載置台構造、これを用いた処理装置及びこの装置の使用方法
JP2008218866A (ja) * 2007-03-07 2008-09-18 Elpida Memory Inc パターン形成方法およびパターン形成装置
JP4830995B2 (ja) * 2007-07-12 2011-12-07 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに記憶媒体
JP5410174B2 (ja) * 2009-07-01 2014-02-05 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理システム
JP2011066119A (ja) * 2009-09-16 2011-03-31 Toshiba Corp 半導体装置の製造装置および製造方法
JP5434800B2 (ja) * 2010-06-01 2014-03-05 東京エレクトロン株式会社 疎水化処理方法及び疎水化処理装置
CN103999198B (zh) * 2011-11-01 2016-08-24 株式会社日立国际电气 半导体器件的制造方法、半导体器件的制造装置及记录介质
JP5971642B2 (ja) * 2011-11-28 2016-08-17 学校法人日本大学 微細金属構造体の製造方法
JP5673523B2 (ja) * 2011-12-28 2015-02-18 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
US8703386B2 (en) * 2012-02-27 2014-04-22 International Business Machines Corporation Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications
JP6324800B2 (ja) * 2014-05-07 2018-05-16 東京エレクトロン株式会社 成膜方法および成膜装置
WO2016088655A1 (ja) * 2014-12-02 2016-06-09 Jsr株式会社 フォトレジスト組成物及びその製造方法並びにレジストパターン形成方法
JP5963893B2 (ja) * 2015-01-09 2016-08-03 株式会社日立国際電気 基板処理装置、ガス分散ユニット、半導体装置の製造方法およびプログラム
JP5947435B1 (ja) * 2015-08-27 2016-07-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体
JP6318139B2 (ja) * 2015-12-25 2018-04-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP6240712B1 (ja) * 2016-05-31 2017-11-29 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6368776B1 (en) * 1998-03-18 2002-04-09 Tokyo Electron Limited Treatment apparatus and treatment method
TW201527872A (zh) * 2013-08-22 2015-07-16 因普利亞公司 以有機金屬溶液為主之高解析度圖案化組合物

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Publication number Publication date
TWI746716B (zh) 2021-11-21
JP6781031B2 (ja) 2020-11-04
JP2018098229A (ja) 2018-06-21
CN116469755A (zh) 2023-07-21
KR102640367B1 (ko) 2024-02-23
KR20240010743A (ko) 2024-01-24
KR20180065914A (ko) 2018-06-18
KR102436241B1 (ko) 2022-08-25
CN108183068A (zh) 2018-06-19
KR20250006804A (ko) 2025-01-13
TW201832305A (zh) 2018-09-01
KR102753390B1 (ko) 2025-01-10
CN108183068B (zh) 2023-05-23
US10656526B2 (en) 2020-05-19
KR20220119346A (ko) 2022-08-29
TW202205498A (zh) 2022-02-01
US20180164689A1 (en) 2018-06-14

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