TWI754742B - 扇狀晶圓片的加工方法 - Google Patents

扇狀晶圓片的加工方法 Download PDF

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TWI754742B
TWI754742B TW107114209A TW107114209A TWI754742B TW I754742 B TWI754742 B TW I754742B TW 107114209 A TW107114209 A TW 107114209A TW 107114209 A TW107114209 A TW 107114209A TW I754742 B TWI754742 B TW I754742B
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田中誠
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Abstract

提供可有效率地加工大口徑晶圓之晶圓的加工方法。

一種扇狀晶圓片的加工方法,是以配合了將晶圓分割成4等 分之1/4晶圓片之形狀的加工進給量進行加工,該加工方法包含:資訊收集步驟,在以工作夾台的保持面保持已將結晶方位定位於規定方向的1/4晶圓片時,收集外周的圓弧位置相異之1/4晶圓片的4個型樣的形狀、及對應於4個型樣的形狀之加工進給量的資訊;型樣選擇步驟,以工作夾台的保持面保持已將結晶方位定位於規定方向的1/4晶圓片,且算出將1/4晶圓片的2個邊作為縱橫的邊的正方形的區域,並以拍攝單元拍攝各邊以搜尋目標型樣的有無,而從目標型樣的有無來選擇相當於4個型樣的哪個型樣;及加工步驟,以對應於所選擇的型樣的加工進給量沿著分割預定線加工所保持的1/4晶圓片。

Description

扇狀晶圓片的加工方法 發明領域
本發明是有關於一種將半導體晶圓、光元件晶圓等晶圓分割成4等分之扇狀晶圓片的加工方法。
發明背景
於正面形成有複數個半導體元件的矽晶圓、形成有LED等複數個光元件的藍寶石晶圓、SiC晶圓等晶圓是形成為圓板狀。
各個元件是被相互正交之複數條分割預定線(切割道)所區劃,並以切割刀沿著分割預定線進行切割(切割裝置)、或以雷射光束形成由燒蝕加工或內部加工形成的改質層(雷射加工裝置),而將晶圓分割為一個個的元件晶片。
近年來,因元件晶片的小型化及晶圓的大口徑化,使每1片晶圓的加工時間有變長的傾向。因此,也會選擇例如將1片晶圓分割成4等分,再各自以不同的加工裝置來加工的這種工序。在該情況下,因為能夠繼續地使晶片流向下一個工序,因而有讓工序整體有效率地進行的效果。
先前技術文獻 專利文獻
專利文獻1:日本專利特開2002-39725號公報
發明概要
然而,對將1片晶圓分成4等分而成的1/4晶圓片(扇狀晶圓片)進行切割時,若未設為因應於1/4晶圓片的形狀之加工進給量的話,會有無法縮短加工時間的課題。
本發明是有鑒於這樣的問題點而作成的發明,其目的在於提供可有效率地加工大口徑晶圓之晶圓的加工方法。
本發明是提供一種扇狀晶圓片的加工方法,是在將圓板狀的晶圓沿著分割預定線分割成4等分之扇狀的1/4晶圓片沿著該分割預定線進行加工時,以配合該1/4晶圓片之形狀的加工進給量進行加工,該圓板狀的晶圓是在被相互正交之複數條的該分割預定線所區劃的正面的各區域中各自形成有元件,該扇狀晶圓片的加工方法之特徵在於具備有:資訊收集步驟,在以工作夾台的保持面保持已將該結晶方位定位於規定方向的該1/4晶圓片時,收集外周的圓弧位置相異之該1/4晶圓片的4個型樣的形狀、及對應於該4個型樣的形狀的加工進給量的資訊; 晶圓單元形成步驟,將該1/4晶圓片的背面貼附於已將外周部裝設於環狀框架之切割膠帶上而形成晶圓單元;保持步驟,在實施該晶圓單元形成步驟後,將該晶圓單元之該1/4晶圓片隔著切割膠帶以加工裝置的工作夾台來吸引保持;校準步驟,在實施該保持步驟後,以該加工裝置之拍攝單元拍攝該1/4晶圓片,並依據形成於該元件的目標型樣使朝第1方向伸長的該分割預定線於加工進給方向上整齊排列;型樣選擇步驟,在實施該校準步驟後,選擇以該工作夾台保持的該1/4晶圓片相當於4個型樣的哪個型樣;及加工步驟,在實施該型樣選擇步驟後,以對應於該選擇的型樣的該加工進給量沿著該分割預定線來將以該工作夾台保持之該1/4晶圓片進行加工。
較理想的是,該型樣選擇步驟包含:目標型樣檢測步驟,算出將該1/4晶圓片的2個邊作為縱橫的邊的正方形的區域,以該拍攝單元在該正方形的4個各邊的中央搜尋該元件中的目標型樣,並從該1/4晶圓片的2個邊檢測該目標型樣;及選擇步驟,從檢測出該目標型樣的邊的位置選擇該1/4晶圓片相當於被分割為4等分之前的XY正交座標系統下的晶圓的第1象限、第2象限、第3象限、第4象限的哪個象限。
根據本發明的加工方法,會發揮下述效果:可以在毋須形狀辨識用之對較大的區域進行辨識的專用的裝置的情形下,藉由檢測目標型樣算出1/4晶圓片的方向,而能夠自動地將加工進給量最佳化。
2:切割裝置
4:支撐基台
4a:開口
6:X軸移動台
8:防塵防滴罩
10:工作夾台
10a:保持面
10b:夾具
12:突出部
14:切割單元
16:片匣升降機
18:片匣
20:支撐構造
22:切割單元移動機構
24:Y軸導軌
26:Y軸移動板
28:Y軸滾珠螺桿
30:Z軸導軌
32:Z軸移動板
34:Z軸滾珠螺桿
36:Z軸脈衝馬達
38:拍攝單元
40:洗淨單元
42:旋轉台
44:噴射噴嘴
11A、11B、11C、11D:1/4晶圓片
F:環狀框架
T:切割膠帶
13:分割預定線
15:元件
17:凹口
21A、21B、21C、21D:晶圓單元
23a、23b:加工量
25:正方形
27a、27b、27c、27d:邊
29:目標型樣搜尋區域
X1、Y1:箭頭
圖1是切割裝置的立體圖。
圖2是顯示1/4晶圓片之4個型樣的晶圓單元的平面圖。
圖3是示意地顯示加工進給量的晶圓單元的平面圖。
圖4是說明型樣選擇步驟的晶圓單元的平面圖。
用以實施發明之形態
以下,參照圖式詳細地說明本發明的實施形態。參照圖1,所示為本發明實施形態的切割裝置之立體圖。切割裝置2具備有支撐基台4,於支撐基台4之上表面形成有在X軸方向(加工進給方向)上較長的矩形狀的開口4a。
於此開口4a內設置有X軸移動台6、使該X軸移動台6於X軸方向上移動的X軸移動機構(圖未示出)、及覆蓋X軸移動機構的防塵防滴罩8。該X軸移動機構具備有與X軸方向平行的一對X軸導軌(圖未示出),且在X軸導軌上是可滑動地安裝有X軸移動台6。
於X軸移動台6的下表面側設置有螺帽部(圖未示),且在此螺帽部螺合有與X軸導軌平行的X軸滾珠螺桿(圖未示)。在X軸滾珠螺桿的一端部連結有X軸脈衝馬達 (圖未示)。當以X軸脈衝馬達使X軸滾珠螺桿旋轉時,X軸移動台6即沿著X軸導軌於X軸方向上移動。
於X軸移動台6上設置有用於吸引、保持被加工物的工作夾台10。工作夾台10是連結於馬達等的旋轉驅動源(圖未示),並以繞著與Z軸方向(鉛直方向)大致平行的旋轉軸的方式旋轉。又,工作夾台10是利用上述之X軸移動機構而於X軸方向上加工進給。
工作夾台10的表面(上表面)是成為吸引、保持被加工物的保持面10a。此保持面10a會通過形成在工作夾台10的內部的流路(圖未示)而與吸引源(圖未示)相連接。在工作夾台10的周圍設置有用於將被加工物固定的夾具10b。
被加工物是例如半導體晶圓,且是貼附於已保持於環狀框架的膠帶上,而可與環狀框架一體地進行操作處理。當使用環狀框架與膠帶來操作處理被加工物時,能夠保護該被加工物免於搬送時產生的衝撃等。此外,當將該膠帶擴張時,能夠將已被切割加工的被加工物分割、或是將分割後的晶片的間隔加寬。再者,亦可不使用環狀框架與膠帶,而將被加工物以單體方式來切割加工。
於遠離開口4a的支撐基台4的前方的角部上,設置有從支撐基台4朝側邊突出的突出部12。突出部12的內部形成有空間,在此空間中設置有可升降的片匣升降機16。在片匣升降機16的上表面,載置有可收容複數個被加工物的片匣18。
在接近於開口4a的位置設置有將上述之被加工物往工作夾台10搬送的搬送單元(圖未示)。已藉搬送單元從片匣18拉出的被加工物,是被載置到工作夾台10的保持面10a。
於支撐基台4的上表面,是將支撐對被加工物進行切割之切割單元14的支撐構造20配置成朝開口4a的上方伸出。在支撐構造20的前表面上部設置有使切割單元14在Y軸方向(分度進給方向)及Z軸方向上移動之切割單元移動機構22。
切割單元移動機構22具備有配置在支撐構造20之前表面且平行於Y軸方向的一對Y軸導軌24。在Y軸導軌24上,可滑動地安裝有構成切割單元移動機構22之Y軸移動板26。在Y軸移動板26之背面側(後表面側)設置有螺帽部(圖未示),且在此螺帽部螺合有平行於Y軸導軌24之Y軸滾珠螺桿28。
在Y軸滾珠螺桿28的一端部上連結有Y軸脈衝馬達(圖未示)。當以Y軸脈衝馬達使Y軸滾珠螺桿28旋轉時,Y軸移動板26即沿著Y軸導軌24在Y軸方向上移動。
在Y軸移動板26的正面(前表面)設置有平行於Z軸方向的一對Z軸導軌30。在Z軸導軌30上,可滑動地安裝有Z軸移動板32。
在Z軸移動板32的背面側(後表面側)設置有螺帽部(圖未示),且在此螺帽部螺合有平行於Z軸導軌30之Z軸滾珠螺桿34。在Z軸滾珠滾珠螺桿34的一端部連結 有Z軸脈衝馬達36。只要以Z軸脈衝馬達36使Z軸滾珠螺桿34旋轉,Z軸移動板32即沿著Z軸導軌30在Z軸方向上移動。
於Z軸移動板32的下部固定有對被加工物進行加工的切割單元14、及拍攝單元38。只要以切割單元移動機構22使Y軸移動板26在Y軸方向上移動,就可將切割單元14及拍攝單元38分度進給,且只要使Z軸移動板32在Z軸方向上移動,切割單元14及拍攝單元38就會升降。
40為洗淨單元,且已藉由切割單元14施行切割加工的被加工物,是藉由搬送機構(圖未示)而從工作夾台10被搬送到洗淨單元40。洗淨單元40具備有在筒狀的洗淨空間內吸引保持被加工物的旋轉台42。於旋轉台42的下部連結有使旋轉台42以規定的速度旋轉的馬達等的旋轉驅動源。
於旋轉台42的上方,配設有朝向被加工物噴射洗淨用的流體(代表性的是將水與空氣混合而成的雙流體)的噴射噴嘴44。當一邊使保持有被加工物的旋轉台42旋轉一邊從噴射噴嘴44噴射洗淨用的流體時,即能夠洗淨切割加工後的被加工物。已藉洗淨單元40洗淨的被加工物,是藉搬送機構(圖未示)來收容於片匣18內。
在本發明實施形態的扇狀晶圓片的加工方法中,首先是使用如圖1所示之切割裝置2來將圓板狀的晶圓分割成4等分。如同眾所周知的,在晶圓的正面上藉由相互正交之複數條分割預定線所區劃出的各區域中各自形 成有元件,且於晶圓的外周形成有表示晶圓的結晶方位的凹口。
當將晶圓分割成4等分時,是將晶圓在XY正交座標系統下分割成第1象限之1/4晶圓片11A、第2象限之1/4晶圓片11B、第3象限之1/4晶圓片11C、及第4象限之1/4晶圓片11D。
參照圖2,所示為將已被分割為4等分之扇狀晶圓片的背面貼附於已將外周部裝設於環狀框架F的切割膠帶T上而成的晶圓單元21A、21B、21C、21D的平面圖。
圖2(A)是透過切割膠帶T以環狀框架F支撐第1象限之1/4晶圓片11A的晶圓單元21A的平面圖,圖2(B)是以環狀框架F支撐第2象限之1/4晶圓片11B的晶圓單元21B的平面圖。
圖2(C)是以環狀框架F支撐第3象限之1/4晶圓片11C的晶圓單元21C的平面圖,圖2(D)是以環狀框架F支撐第4象限之1/4晶圓片11D的晶圓單元21D的平面圖。
如圖2所示,1/4晶圓片11A~11D是4個型樣,在所圖示之實施形態中,第3象限之1/4晶圓片11C與第4象限之1/4晶圓片11D具有在凹口17部分被分割的凹口17的一部分。
在本發明實施形態的扇狀晶圓片的加工方法中,是在以工作夾台10的保持面10a保持已將結晶方位定位於規定方向的1/4晶圓片11A~11D時,實施資訊收集步驟,該資訊收集步驟是收集外周的圓弧位置相異之1/4 晶圓片(扇狀晶圓片)的4個型樣的形狀及對應於該4個型樣的形狀的加工進給量的資訊。
在已將晶圓的結晶方位定位於規定的方向的狀態下實施該資訊收集步驟是因為:由拍攝單元38進行之形成於元件15的目標型樣的檢測精度為限定為從結晶方位到10°左右,因此必須將在被分割出如圖2所示之4個1/4晶圓片的4個型樣的形狀11A~11D的狀態下透過切割膠帶T以環狀框架F支撐的晶圓單元21A~21D形成4個種類。
該資訊收集步驟是在開始進行1/4晶圓片11A~11D的加工前進行預先收集並儲存於加工裝置之控制器的記憶體。關於預先收集的加工進給量將參照圖3說明。
晶圓單元21A是將第1象限之1/4晶圓片11A透過切割膠帶T以環狀框架F支撐的晶圓單元,對1/4晶圓片11A之朝第1方向伸長的分割預定線13進行加工時的加工量23a是設定為為隨著朝Y軸方向行進而沿著圓弧漸減,並將該已設定的加工量23a之值儲存於控制器之記憶體。
對朝第2方向伸長之分割預定線13進行加工時的加工量也是設為為將工作夾台10朝逆時針方向旋轉90°並進行加工,且將朝第2方向伸長之分割預定線13之加工量23b設定為隨著朝分度進給方向行進而沿著圓弧漸減,並將該加工量23b之資訊儲存於控制器之記憶體。
關於第2象限之1/4晶圓片11B、第3象限之1/4晶圓片11C、及第4象限之1/4晶圓片11D,也是將對應於1/4晶圓片之形狀的加工進給量的資訊儲存於控制器之記憶體。
在以下的說明中,主要是針對將第1象限之1/4晶圓片11A透過切割膠帶T以環狀框架F支撐之形態的晶圓單元21A來說明。在本實施形態之扇狀晶圓片的加工方法中,在已實施晶圓單元形成步驟及資訊收集步驟後,是實施將晶圓單元21A的1/4晶圓片11A隔著切割膠帶T以切割裝置2之工作夾台10來吸引保持的保持步驟。
以如此將1/4晶圓片11A隔著切割膠帶T以工作夾台10吸引保持的狀態來實施校準步驟,該校準步驟是以切割裝置2之拍攝單元38拍攝1/4晶圓片11A,並依據形成於各元件15的目標型樣使朝第1方向伸長之分割預定線13於加工進給方向(X軸方向)上整齊排列。
在該校準步驟中,是對工作夾台10進行θ旋轉,以讓偏離X軸方向之將元件15中的目標型樣連結而成的直線變得與X軸方向平行,並將切割單元14於Y軸方向上移動相當於相鄰之分割預定線的中心與目標型樣之間的距離,而使應切割之分割預定線13與切割單元14之切割刀於X軸方向上整齊排列。
實施校準步驟後,實施型樣選擇步驟,該型樣選擇步驟是選擇所保持之1/4晶圓片相當於4個型樣的哪個型樣。在該型樣選擇步驟中,是如圖4所示,算出包 含1/4晶圓片11A之正交的2個邊27a、27b的正方形25。
邊27c及27d為假想地描繪出的正方形25的其他的2個邊。如此假想地算出正方形25後,在各邊27a~27d之大致中央部分設定目標型樣搜尋區域29。
以拍攝單元38拍攝在已設定於各邊27a~27d的目標型樣搜尋區域29,並確認目標型樣的有無。在邊27a及27b之目標型樣搜尋區域29中會被確認為有設定於元件15之目標型樣。
另一方面,在設定於假想的邊27c、27d之目標型樣搜尋區域29中,因為元件並未存在該目標型樣搜尋區域29中,所以被檢測為無目標型樣。從該檢測結果,可將圖4所示之1/4晶圓片11A選擇為第1象限之1/4晶圓片11A(型樣選擇步驟)。
關於第2象限之1/4晶圓片11B、第3象限之1/4晶圓片11C、及第4象限之1/4晶圓片11D,也是以同樣方法來選擇型樣。圖4中箭頭X1是表示加工進給方向,箭頭Y1是表示分度進給方向。
也就是說,型樣選擇步驟包含目標型樣檢測步驟及選擇步驟,該目標型樣檢測步驟是算出將1/4晶圓片的2個邊作為縱橫的邊的正方形25的區域,且以拍攝單元38於正方形25之4個邊27a~27d的大致中央部分搜尋元件中的目標型樣,而從1/4晶圓片的2個邊檢測目標型樣,該選擇步驟是從檢測出目標型樣的邊的位置來選擇1/4晶圓片相當於被分割為4等分之前的晶圓的XY正交座標系統 下的晶圓的第1象限、第2象限、第3象限、第4象限的哪個象限。
已實施型樣選擇步驟後,實施以對應於所選擇之型樣的加工進給量並沿著分割預定線13來以切割單元14之切割刀對以工作夾台10保持之1/4晶圓片進行加工的加工步驟。
在該加工步驟中,因為在資訊收集步驟中已預先將對應於4個型樣的形狀之加工進給量的資訊儲存於控制器的記憶體中,所以可以自動地將加工進給量最佳化而可以實施有效率的加工。
在上述實施形態中,雖然是以切割裝置2的切割刀對1/4晶圓片(扇狀晶圓片)11A~11D進行切割,但亦可設成取代切割裝置2而採用雷射加工裝置,並沿著分割預定線13照射雷射光束來實施燒蝕加工或在晶圓內部形成改質層之內部加工。
X1:加工進給方向
Y1:分度進給方向
F:環狀框架
T:切割膠帶
10:工作夾台
11A:1/4晶圓片
21A:晶圓單元
25:正方形
27a、27b、27c、27d:邊
29:目標型樣搜尋區域

Claims (4)

  1. 一種扇狀晶圓片的加工方法,是在將圓板狀的晶圓沿著分割預定線分割成4等分之扇狀的1/4晶圓片沿著該分割預定線進行加工時,以配合該1/4晶圓片之形狀的加工進給量進行加工,該圓板狀的晶圓是在被相互正交之複數條的該分割預定線所區劃的正面的各區域中各自形成有元件,且在外周具有表示結晶方位之凹口,該扇狀晶圓片的加工方法之特徵在於具備有: 資訊收集步驟,在以工作夾台的保持面保持已將該結晶方位定位於規定方向的該1/4晶圓片時,收集外周的圓弧位置相異之該1/4晶圓片的4個型樣的形狀、及對應於該4個型樣的形狀的加工進給量的資訊; 晶圓單元形成步驟,將該1/4晶圓片的背面貼附於已將外周部裝設於環狀框架之切割膠帶上而形成晶圓單元; 保持步驟,在實施該晶圓單元形成步驟後,將該晶圓單元之該1/4晶圓片隔著切割膠帶以加工裝置的工作夾台來吸引保持; 校準步驟,在實施該保持步驟後,以該加工裝置之拍攝單元拍攝該1/4晶圓片,並依據形成於該元件的目標型樣使朝第1方向伸長的該分割預定線於加工進給方向上整齊排列; 型樣選擇步驟,在實施該校準步驟後,選擇以該工作夾台保持的該1/4晶圓片相當於該4個型樣的哪個型樣;及 加工步驟,在實施該型樣選擇步驟後,以對應於該選擇的型樣的該加工進給量沿著該分割預定線來將以該工作夾台保持之該1/4晶圓片進行加工。
  2. 如請求項1之扇狀晶圓片的加工方法,其中該型樣選擇步驟包含: 目標型樣檢測步驟,算出將該1/4晶圓片的2個邊作為縱橫的邊的正方形的區域,以該拍攝單元在該正方形的4個各邊的中央搜尋該元件中的目標型樣,並從該1/4晶圓片的2個邊檢測該目標型樣;及 選擇步驟,從檢測出該目標型樣的邊的位置選擇出該1/4晶圓片相當於被分割為4等分之前的XY正交座標系統下的晶圓的第1象限、第2象限、第3象限、第4象限的哪個象限。
  3. 如請求項1之扇狀晶圓片的加工方法,其中在該加工步驟中,是以切割裝置之切割刀切割該分割預定線。
  4. 如請求項1之扇狀晶圓片的加工方法,其中在該加工步驟中,是沿著該分割預定線照射雷射光束來加工。
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