JP6896337B2 - 扇状ウェーハ片の加工方法 - Google Patents
扇状ウェーハ片の加工方法 Download PDFInfo
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- JP6896337B2 JP6896337B2 JP2017108969A JP2017108969A JP6896337B2 JP 6896337 B2 JP6896337 B2 JP 6896337B2 JP 2017108969 A JP2017108969 A JP 2017108969A JP 2017108969 A JP2017108969 A JP 2017108969A JP 6896337 B2 JP6896337 B2 JP 6896337B2
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- 238000003672 processing method Methods 0.000 title description 3
- 238000000034 method Methods 0.000 claims description 13
- 238000003384 imaging method Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 111
- 238000003754 machining Methods 0.000 description 19
- 230000007246 mechanism Effects 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 6
- 239000012530 fluid Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000002679 ablation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
- H01L2223/5446—Located in scribe lines
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Description
10 チャックテーブル
11A〜11D 1/4ウェーハ片
13 分割予定ライン
14 切削ユニット
15 デバイス
17 ノッチ
21A〜21D ウェーハユニット
23a,23b 加工送り量
25 仮想正方形
27a,27b 辺
27c,27d 仮想正方形の辺
29 ターゲットパターン探索区域
38 撮像ユニット
Claims (3)
- 互いに直交する複数の分割予定ラインに区画された表面の各領域にそれぞれデバイスが形成され外周に結晶方位を示すノッチを有する円板状のウェーハが、該分割予定ラインに沿って4等分に分割された扇状の1/4ウェーハ片を該分割予定ラインに沿って加工する際に、該1/4ウェーハ片の形状に合わせた加工送り量で加工する扇状ウェーハ片の加工方法であって、
該結晶方位を所定の向きに位置付けた該1/4ウェーハ片をチャックテーブルの保持面で保持した場合、外周の円弧の位置が異なる該1/4ウェーハ片の4パターンの形状と、該4パターンの形状に対応した加工送り量の情報とを収集する情報収集ステップと、
該1/4ウェーハ片の裏面を外周部が環状フレームに装着されたダイシングテープに貼着してウェーハユニットを形成するウェーハユニット形成ステップと、
該ウェーハユニット形成ステップを実施した後、該ウェーハユニットの該1/4ウェーハ片をダイシングテープを介して加工装置のチャックテーブルで吸引保持する保持ステップと、
該保持ステップを実施した後、該加工装置の撮像ユニットで該1/4ウェーハ片を撮像し、該デバイスに形成されているターゲットパターンに基づいて第1の方向に伸長する該分割予定ラインを加工送り方向に整列させるアライメントステップと、
該アライメントステップを実施した後、該チャックテーブルで保持した該1/4ウェーハ片が該4パターンのどのパターンに該当するかを選択するパターン選択ステップと、
該パターン選択ステップを実施した後、該チャックテーブルで保持した該1/4ウェーハ片を該選択したパターンに対応した該加工送り量で該分割予定ラインに沿って加工する加工ステップと、を備え、
該パターン選択ステップは、
該1/4ウェーハ片の2つの辺を縦横の辺とする正方形の領域を算出し、該撮像ユニットで該正方形の4つの各辺の中央で該デバイス中のターゲットパターンを探索し、該1/4ウェーハ片の2つの辺から該ターゲットパターンを検出するターゲットパターン検出ステップと、
該ターゲットパターンが検出された辺の位置から、該1/4ウェーハ片が4等分に分割される前のXY直交座標系でウェーハの第1象限、第2象限、第3象限、第4象限のどの象限に該当するかを選択する選択ステップと、を含む扇状ウェーハ片の加工方法。 - 該加工ステップでは、該分割予定ラインが切削装置の切削ブレードで切削される請求項1記載の扇状ウェーハ片の加工方法。
- 該加工ステップでは、該分割予定ラインに沿ってレーザービームを照射して加工する請求項1記載の扇状ウェーハ片の加工方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017108969A JP6896337B2 (ja) | 2017-06-01 | 2017-06-01 | 扇状ウェーハ片の加工方法 |
TW107114209A TWI754742B (zh) | 2017-06-01 | 2018-04-26 | 扇狀晶圓片的加工方法 |
MYPI2018701956A MY190519A (en) | 2017-06-01 | 2018-05-21 | Processing method for sector-shaped wafer piece |
SG10201804290UA SG10201804290UA (en) | 2017-06-01 | 2018-05-21 | Processing method for sector-shaped wafer piece |
KR1020180058889A KR102457882B1 (ko) | 2017-06-01 | 2018-05-24 | 부채형 웨이퍼편의 가공 방법 |
CN201810537138.3A CN108987340B (zh) | 2017-06-01 | 2018-05-30 | 扇状晶片的加工方法 |
US15/994,661 US10424512B2 (en) | 2017-06-01 | 2018-05-31 | Processing method for sector-shaped wafer piece |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2017108969A JP6896337B2 (ja) | 2017-06-01 | 2017-06-01 | 扇状ウェーハ片の加工方法 |
Publications (2)
Publication Number | Publication Date |
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JP2018206882A JP2018206882A (ja) | 2018-12-27 |
JP6896337B2 true JP6896337B2 (ja) | 2021-06-30 |
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JP2017108969A Active JP6896337B2 (ja) | 2017-06-01 | 2017-06-01 | 扇状ウェーハ片の加工方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10424512B2 (ja) |
JP (1) | JP6896337B2 (ja) |
KR (1) | KR102457882B1 (ja) |
CN (1) | CN108987340B (ja) |
MY (1) | MY190519A (ja) |
SG (1) | SG10201804290UA (ja) |
TW (1) | TWI754742B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6908464B2 (ja) * | 2016-09-15 | 2021-07-28 | 株式会社荏原製作所 | 基板加工方法および基板加工装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH09148275A (ja) * | 1995-11-17 | 1997-06-06 | Disco Abrasive Syst Ltd | 大口径ウェーハのダイシングシステム |
JP4451970B2 (ja) | 2000-07-27 | 2010-04-14 | 株式会社ディスコ | 被加工物輪郭認識装置を含むダイシング機 |
JP2008060164A (ja) * | 2006-08-29 | 2008-03-13 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法 |
JP6066672B2 (ja) * | 2012-11-05 | 2017-01-25 | 株式会社ディスコ | ウエーハの加工方法 |
JP6066673B2 (ja) * | 2012-11-05 | 2017-01-25 | 株式会社ディスコ | ウエーハの加工方法 |
JP2014093444A (ja) * | 2012-11-05 | 2014-05-19 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2015103674A (ja) * | 2013-11-25 | 2015-06-04 | 豊田合成株式会社 | Iii族窒化物半導体発光素子の製造方法 |
JP6716263B2 (ja) * | 2016-01-22 | 2020-07-01 | 株式会社ディスコ | ウエーハの加工方法 |
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2017
- 2017-06-01 JP JP2017108969A patent/JP6896337B2/ja active Active
-
2018
- 2018-04-26 TW TW107114209A patent/TWI754742B/zh active
- 2018-05-21 SG SG10201804290UA patent/SG10201804290UA/en unknown
- 2018-05-21 MY MYPI2018701956A patent/MY190519A/en unknown
- 2018-05-24 KR KR1020180058889A patent/KR102457882B1/ko active IP Right Grant
- 2018-05-30 CN CN201810537138.3A patent/CN108987340B/zh active Active
- 2018-05-31 US US15/994,661 patent/US10424512B2/en active Active
Also Published As
Publication number | Publication date |
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US10424512B2 (en) | 2019-09-24 |
CN108987340A (zh) | 2018-12-11 |
JP2018206882A (ja) | 2018-12-27 |
TW201903865A (zh) | 2019-01-16 |
KR20180131970A (ko) | 2018-12-11 |
SG10201804290UA (en) | 2019-01-30 |
US20180350681A1 (en) | 2018-12-06 |
TWI754742B (zh) | 2022-02-11 |
KR102457882B1 (ko) | 2022-10-21 |
MY190519A (en) | 2022-04-26 |
CN108987340B (zh) | 2023-11-14 |
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