TWI754347B - 真空裝置 - Google Patents
真空裝置 Download PDFInfo
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- TWI754347B TWI754347B TW109127135A TW109127135A TWI754347B TW I754347 B TWI754347 B TW I754347B TW 109127135 A TW109127135 A TW 109127135A TW 109127135 A TW109127135 A TW 109127135A TW I754347 B TWI754347 B TW I754347B
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
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- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J15/00—Gripping heads and other end effectors
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G47/00—Article or material-handling devices associated with conveyors; Methods employing such devices
- B65G47/74—Feeding, transfer, or discharging devices of particular kinds or types
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- B65G47/904—Devices for picking-up and depositing articles or materials provided with rotary movements only
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H—ELECTRICITY
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- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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Abstract
本發明的實施形態提供一種可提高遮罩溫度的面內均一性的真空裝置。實施形態的真空裝置包括:腔室,將內部予以減壓;以及搬送機器人,朝腔室內搬送處理對象,搬送機器人包括:臂部;支持部,設置於臂部的前端部,且熱傳導率低於所述臂部;板,設置於支持部與處理對象之間,且熱傳導率高於支持部;以及支持墊,設置於支持部上,與處理對象接觸而支持所述處理對象,且所述真空裝置於支持部與板之間,具有使支持部與板接觸的接觸區域、及使所述支持部與所述板之間分開的空間區域。
Description
本發明的實施形態是有關於一種真空裝置。
於帶電粒子束描繪裝置中,為了將圖案(pattern)描繪於遮罩(mask),而由搬送機器人將遮罩搬入真空腔室(chamber)內,並載置於描繪載台上。遮罩藉由與搬送機器人的接觸而接受來自搬送機器人的熱,直至遮罩被載置於載台為止。搬送機器人的熱經由機器人臂傳遞至遮罩,故僅傳遞至遮罩與搬送機器人墊的接觸部位。因此,在遮罩面內產生溫度偏差,而遮罩的熱膨脹變得不均一。其會導致描繪精度的惡化。
實施形態提供一種可提高遮罩溫度的面內均一性的真空裝置。
實施形態的真空裝置包括:腔室,將內部予以減壓;以及搬送機器人,朝腔室內搬送處理對象,搬送機器人包括:臂部;支持部,設置於臂部的前端部,且熱傳導率低於所述臂部;板,設置於支持部與處理對象之間,且熱傳導率高於支持部;以及支持墊,設置於支持部上,與處理對象接觸而支持所述處理對象,且所述真空裝置於支持部與板之間,具有使支持部與板接觸的接觸區域、及使所述支持部與所述板之間分開的空間區域。
以下,參照圖式對本發明的實施形態進行說明。本實施形態不限定本發明。圖式為示意性或概念性圖,各部分的比率等未必與現實的比率相同。於說明書與圖式中,對於與已出現的圖式中所述的要素為同樣的要素標註同一符號且適當省略詳細的說明。
(第一實施形態)
圖1是表示第一實施形態的帶電粒子束描繪裝置10的結構的一例的圖。圖1所示的帶電粒子束描繪裝置10例如朝處理對象(遮罩W)照射電子束而描繪規定的圖案。再者,本實施形態除了描繪裝置以外,亦可為曝光裝置、電子顯微鏡、光學顯微鏡等將電子束或光照射至處理對象的裝置。因此,處理對象除了遮罩以外,亦可為半導體基板等。帶電粒子束例如可為電子束、光、離子束等。
作為真空裝置的帶電粒子束描繪裝置10包括:描繪腔室1、電子鏡筒2、機器人腔室3、搬送機器人4、以及裝載腔室5(load lock chamber)。
描繪腔室1被抽真空,收納供載置遮罩(遮罩坯料(mask blanks))W的描繪載台1a。電子鏡筒2具有未圖示的電子槍、孔徑陣列(aperture array)等,將電子束(帶電粒子束)朝描繪載台1a上的遮罩W照射。機器人腔室3配置於描繪腔室1與裝載腔室5之間且被抽真空。機器人腔室3於其內部收納搬送機器人4,用於在描繪腔室1與裝載腔室5之間搬送遮罩W。搬送機器人4構成為可在機器人腔室3內,以旋轉機構41為軸進行旋轉,利用升降桿42、機器人臂43、末端效應器(end effector)44對遮罩W進行搬送。在外部與機器人腔室3之間搬送遮罩W時使用裝載腔室5。在自外部搬入遮罩W時,裝載腔室5向大氣開放,在將遮罩W朝機器人腔室3搬送時,與機器人腔室3同樣地被抽真空。於描繪腔室1與機器人腔室3之間、及於機器人腔室3與裝載腔室5之間,分別設置閘閥(gate valve)6、閘閥7。
圖2是表示帶電粒子束描繪裝置10的結構的一例的圖。搬送機器人4收納於機器人腔室3內,具有保持遮罩W的末端效應器44,對遮罩W進行搬送。搬送機器人4包括:旋轉機構41、升降桿42、機器人臂43、以及末端效應器44。旋轉機構41可使機器人臂43及末端效應器44以大致鉛垂方向的軸為中心而旋轉。升降桿42可於旋轉機構41中,使機器人臂43及末端效應器44進行升降。機器人臂43安裝於升降桿42,使多個軸(shaft)屈伸而保持遮罩W並搬送。於旋轉機構41,內置使旋轉機構41、升降桿42、機器人臂43運作的驅動源。末端效應器44以設置於機器人臂43的前端部而可保持遮罩W的方式構成。搬送機器人4的更詳細的結構將參照圖3於後文描述。於機器人腔室3的周圍,設置有對遮罩W予以定位的對準腔室(alignment chamber)8。
然而,存在因搬送機器人4的驅動源的發熱(例如,由通電引起的焦耳(Joule)熱),來自驅動源的熱經由機器人臂43傳遞至末端效應器44,末端效應器44的溫度會上升的情況。例如,存在當於末端效應器44載置遮罩W並朝描繪載台1a搬送時,遮罩W的溫度因來自末端效應器44的熱傳導而上升0.04℃~0.05℃左右的情況。於描繪大規模積體電路(Large-scale integrated circuit,LSI)等的細微的圖案時,即便此種程度的溫度上升亦有可能對描繪精度帶來不良影響。又,於遮罩W產生溫度不均,而遮罩W的熱膨脹變得不均一,描繪精度有可能惡化。
通常而言,在等待至載置於描繪載台1a的遮罩W為與描繪載台1a的溫度大致相同的溫度之後,進行遮罩W的描繪。然而,於描繪腔室1的真空中,幾乎無由媒體的對流引起的熱傳遞,而難以排出遮罩W的熱。因此,直至遮罩W成為描繪載台1a的溫度為止的等待時間(均熱時間)為非常長的時間。又,雖未圖示,但存在於機器人腔室3,為了將遮罩W的溫度均一化而設置均熱腔室的情況。然而,即便於均熱腔室內,由於進行非接觸下的均熱處理,故均熱時間亦為比較長的時間。因此,當遮罩W的溫度因來自末端效應器44的熱傳導而產生偏差時,其後的均熱時間會長期化。
因此,本實施形態的搬送機器人具有如下那樣的結構。
圖3的(A)及圖3的(B)是表示第一實施形態的搬送機器人4的前端部的結構例的平面圖及側面圖。圖3的(B)表示沿著圖3的(A)的B-B線的剖面。
搬送機器人4包括:末端效應器44、板45、以及支持墊46。作為支持部的末端效應器44設置於作為臂部的機器人臂43的前端部,包含熱傳導率低於機器人臂43的材料。對於機器人臂43,例如使用不鏽鋼(stainless)、鋁合金等熱傳導率比較高的金屬。對於末端效應器44,例如使用氧化鋯(zirconia)等陶瓷(ceramic)、聚醚醚酮(Poly Ether Ether Ketone,PEEK)等工程塑膠(engineering plastic)等熱傳導率比較低的材料。藉此,於旋轉機構41或升降桿42產生的熱經由機器人臂43被傳遞,但幾乎不傳導至末端效應器44。
再者,當末端效應器44帶電時,易於吸附微粒(particle)、或發生因放電所致的故障。為了應對此種問題,末端效應器44為了抑制藉由電子束而帶電,較佳為利用導電性薄膜材料予以塗佈。
然而,雖說熱傳導率低,但於末端效應器44與機器人臂43的連接部附近,末端效應器44的溫度變高。另一方面,與機器人臂43分離的末端效應器44的前端部幾乎被絕熱,其溫度保持低溫不變。因此,於末端效應器44亦產生溫度的面內分佈(溫度偏差)。當末端效應器44的溫度於面內產生產生偏差時,有藉由來自末端效應器44的輻射,而遮罩W的溫度亦於面內產生偏差的擔憂。
因此,板45設置於末端效應器44與遮罩W之間。板45包含熱傳導率高於末端效應器44的材料。又,板45包含輻射率低於遮罩W的材料。例如,在遮罩W為石英時,對於板45,例如可使用銅、鋁或金等熱傳導率高、且輻射率低的金屬材料。
如圖3的(A)所示般,板45具有在平面上大於遮罩W的面積。於自鉛垂方向觀察時,板45的外緣位於較遮罩W的外緣更靠外側,而板45與遮罩W重疊。又,如圖3的(B)所示般,板45相對於遮罩W及末端效應器44的表面大致平行地配置,而不與遮罩W直接接觸。另一方面,板45具有突出部45a,經由突出部45a與末端效應器44接觸。突出部45a包含與板45相同的材料。
如此般,將熱傳導率高的板45設置於末端效應器44與遮罩W之間,並使所述板45與末端效應器44接觸。藉此,末端效應器44的熱傳遞至板45,而於板45的面內大致均一化。即,末端效應器44的溫度的面內分佈(偏差)被板45均一化。又,板45的輻射率低於遮罩W的輻射率。藉此,遮罩W幾乎不受來自板45的熱輻射所致的影響。即便多少存在來自板45的熱輻射的影響,遮罩W亦受到被板45大致均一化的溫度的影響。進而,於自鉛垂方向觀察時,板45的外緣位於較遮罩W的外緣更靠外側,而板45大於遮罩W。因此,板45可將遮罩W整體予以遮擋而不受來自末端效應器44的輻射。藉此,遮罩W幾乎不受末端效應器44的溫度的面內分佈(偏差)影響。其結果為,遮罩W的溫度於面內幾乎不產生偏差,而可維持為大致均一的溫度。再者,當銅被氧化時,輻射率上升。然而,由於板45在真空中移動,故即便對於板45使用銅,亦不被氧化,而可維持輻射率為低的狀態。
又,如圖3的(A)所示般,支持墊46與遮罩W的面內的3個部位接觸而予以支持,可將遮罩W在末端效應器44上予以保持。如圖3的(B)所示般,支持墊46設置於末端效應器44上,包含熱傳導率低於機器人臂43及板45的材料。對於支持墊46,例如使用樹脂、陶瓷等熱傳導率低的材料。支持墊46的熱傳導率低於機器人臂43的熱傳導率。支持墊46設置於末端效應器44與板45之間及板45與遮罩W之間,對板45予以支持且亦對遮罩W予以支持。換言之,板45插入置於末端效應器44與遮罩W之間的支持墊46中,而將遮罩W整體與末端效應器44分離。藉此,板45可將遮罩W自末端效應器44的輻射熱以某種程度予以分離,而可緩和溫度的面內分佈。
於板45與末端效應器44之間,具有作為接觸區域的突出部45a及空間區域SP。如上文所述般,突出部45a作為使末端效應器44與板45接觸的接觸區域而發揮功能。空間區域SP是使末端效應器44與板45分開的區域。
若不設置空間區域SP而板45整體與末端效應器44接觸,則板45直接傳遞末端效應器44的溫度分佈,而無法將溫度均一化。
對此,於本實施形態中,於板45與末端效應器44之間設置作為接觸區域的突出部45a及空間區域SP兩者。藉此,突出部45a將接觸區域中的末端效應器44的溫度傳遞至板45。另一方面,空間區域SP使板45與末端效應器44分開,而不朝板45傳遞來自末端效應器44的熱。因此,板45可經由突出部45a僅將接觸區域的熱傳遞至面內,而使板45的面內的溫度分佈大致均一。又,板45自身包含輻射率比較小的材料。因此,遮罩W不易受到板45的輻射的影響,且遮罩W的面內的溫度分佈幾乎不產生偏差。
圖4是表示自搬送機器人4被載置於載台1a上的遮罩W的溫度變化的圖表。橫軸表示遮罩W的位置,0為遮罩W的中心。縱軸表示遮罩W的溫度變化,0表示無溫度變化。溫度朝正(+ΔT)側變化是指在將遮罩W載置於載台1a上時,遮罩W的溫度上升。溫度朝負(-ΔT)側變化是指在將遮罩W載置於載台1a上時,遮罩W的溫度降低。即,可謂溫度變化在遮罩W的面內較佳為接近0。
線L0表示末端效應器44包含與機器人臂43相同的金屬材料、且未設置板45時的遮罩W的溫度變化。此種情形下,溫度變化在遮罩W的中心附近朝+ΔT側具有大的波峰,於+X朝-ΔT側大幅降低。因此,遮罩W的面內的溫度偏差大。
線L1表示使用本實施形態的搬送機器人4的遮罩W的溫度變化。即,末端效應器44包含陶瓷等熱傳導率低的材料,且設置有板45。此種情形下,溫度變化雖然於+X朝-ΔT側降低,但與線L0相比無波峰,而遮罩W的面內的溫度偏差比較小。如此般,本實施形態的搬送機器人4可抑制遮罩W的溫度於面內的偏差。藉此,可抑制遮罩W在描繪過程中的變形,從而可抑制描繪精度的劣化。
再者,末端效應器44、板45及支持墊46的形狀不限定於圖3的(A)及圖3的(B),可如以下的實施形態般進行變更。
(第二實施形態)
圖5的(A)及圖5的(B)是表示第二實施形態的搬送機器人4的前端部的結構例的平面圖及側面圖。於第二實施形態中,於自鉛垂方向觀察時,板45的尺寸小於遮罩W。即,於鉛垂方向觀察時,板45的外緣位於較遮罩W的外緣更靠內側。板45不與支持墊46接觸而分開。第二實施形態的其他結構可與第一實施形態的對應的結構同樣。
如此般,即便板45小於遮罩W,且不與支持墊46接觸,亦可經由突出部45a將來自末端效應器44的熱大致均一地傳遞至面內。又,由於板45的輻射率比較小,故遮罩W的溫度不易受到來自末端效應器44的輻射熱的影響,而於遮罩W的面內幾乎不產生偏差。
根據第二實施形態,板45不是設置於遮罩W的整個下方,但可以某種程度抑制遮罩W溫度的面內偏差。
(第三實施形態)
圖6是表示第三實施形態的搬送機器人4的前端部的結構例的側面圖。第三實施形態的平面圖可與圖3的(A)同樣。於第三實施形態中,設置多個腳部47。於彼此相鄰的腳部47間,設置空間區域SP。支持墊46設置於板45與遮罩W之間,但未設置於板45與末端效應器44之間。多個腳部47包含熱傳導率低於板45的材料,對板45予以支持,且將板45與末端效應器44分開。第三實施形態的其他結構可與第一實施形態的對應的結構同樣。
如此般,板45可經由多個腳部47受到來自末端效應器44的輻射熱,且於板45的面內大致均一地傳遞。再者,由於腳部47的熱傳導率低,故末端效應器44的熱幾乎不經由腳部47朝板45傳遞。又,由於板45的輻射率比較小,故遮罩W的溫度不易受到來自末端效應器44的輻射熱的影響,而於遮罩W的面內幾乎不產生偏差。因此,第三實施形態可獲得與第一實施形態同樣的效果。
(第四實施形態)
圖7是表示第四實施形態的搬送機器人4的前端部的結構例的側面圖。第四實施形態的平面圖可與圖5的(A)同樣。第四實施形態是第二實施形態及第三實施形態的組合。即,於自鉛垂方向觀察時,板45的尺寸小於遮罩W。並且,多個腳部47設置於板45的下方。於彼此相鄰的腳部47間,設置空間區域SP。第四實施形態的其他結構可與第二實施形態的對應的結構同樣。因此,第四實施形態可獲得與第二實施形態及第三實施形態同樣的效果。
對於本發明的若干個實施形態進行了說明,但所述實施形態作為示例而提出,並非意圖限定發明的範圍。所述實施形態可以其他各種形態進行實施,在不脫離發明主旨的範圍內可進行各種省略、置換、變更。所述實施形態及其變形與包含於發明的範圍及要旨內同樣地,包含於申請專利範圍所記載的發明及其均等的範圍內。
1:描繪腔室
1a:描繪載台、載台
2:電子鏡筒
3:機器人腔室
4:搬送機器人
5:裝載腔室
6、7:閘閥
8:對準腔室
10:帶電粒子束描繪裝置
41:旋轉機構
42:升降桿
43:機器人臂
44:末端效應器(支持部)
45:板
45a:突出部
46:支持墊
47:腳部
B-B:線
L0、L1:線
SP:空間區域
W:處理對象(遮罩、遮罩坯料)
圖1是表示第一實施形態的帶電粒子束描繪裝置的結構的一例的圖。
圖2是表示帶電粒子束描繪裝置的結構的一例的圖。
圖3的(A)、圖3的(B)是表示第一實施形態的搬送機器人的前端部的結構例的平面圖及側面圖。
圖4是表示自搬送機器人被載置於載台上的遮罩的溫度變化的圖表。
圖5的(A)、圖5的(B)是表示第二實施形態的搬送機器人的前端部的結構例的平面圖及側面圖。
圖6是表示第三實施形態的搬送機器人的前端部的結構例的側面圖。
圖7是表示第四實施形態的搬送機器人的前端部的結構例的側面圖。
44:末端效應器(支持部)
45:板
45a:突出部
46:支持墊
B-B:線
SP:空間區域
W:處理對象(遮罩、遮罩坯料)
Claims (10)
- 一種真空裝置,包括:腔室,將內部予以減壓;以及搬送機器人,朝所述腔室內搬送處理對象,且所述搬送機器人包括:臂部;支持部,設置於所述臂部的前端部,且熱傳導率低於所述臂部;板,設置於所述支持部與所述處理對象之間,且熱傳導率高於所述支持部;以及支持墊,設置於所述支持部上,與所述處理對象接觸且使所述處理對象與所述板分開而對所述處理對象予以支持,所述真空裝置於所述支持部與所述板之間,具有使所述支持部與所述板接觸的接觸區域、及使所述支持部與所述板之間分開的空間區域,所述板具有作為所述接觸區域所構成的突出部。
- 如請求項1所述的真空裝置,其中所述板插入置於所述支持部與所述處理對象之間的所述支持墊中。
- 如請求項1所述的真空裝置,其中所述板的輻射率低於所述處理對象的輻射率。
- 如請求項1所述的真空裝置,其中對於所述支持部使用陶瓷, 對於所述板使用銅、鋁或金,對於所述支持墊,使用樹脂。
- 如請求項1所述的真空裝置,其中在從大致鉛垂方向觀察時,所述板的外緣位於較所述處理對象的外緣更靠外側。
- 如請求項1所述的真空裝置,其中在從大致鉛垂方向觀察時,所述板的外緣位於較所述處理對象的外緣更靠內側。
- 如請求項1所述的真空裝置,其中所述板與所述處理對象大致平行地配置。
- 如請求項1所述的真空裝置,其中所述板與所述支持部大致平行地配置。
- 如請求項1至請求項8中任一項所述的真空裝置,其中於所述支持部的表面塗佈導電性材料。
- 如請求項1至請求項8中任一項所述的真空裝置,其中所述支持墊的熱傳導率低於所述臂部的熱傳導率。
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CN114144288A (zh) | 2022-03-04 |
US20220172922A1 (en) | 2022-06-02 |
TW202123296A (zh) | 2021-06-16 |
CN114144288B (zh) | 2024-02-02 |
JP7325260B2 (ja) | 2023-08-14 |
KR102649869B1 (ko) | 2024-03-22 |
KR20220018008A (ko) | 2022-02-14 |
JP2021034482A (ja) | 2021-03-01 |
WO2021033528A1 (ja) | 2021-02-25 |
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