TWI752475B - 蝕刻裝置及其蝕刻方法 - Google Patents
蝕刻裝置及其蝕刻方法 Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 354
- 238000000034 method Methods 0.000 title claims abstract description 45
- 239000007788 liquid Substances 0.000 claims abstract description 123
- 238000004140 cleaning Methods 0.000 claims abstract description 91
- 238000011084 recovery Methods 0.000 claims description 36
- 239000012530 fluid Substances 0.000 claims description 25
- 238000011010 flushing procedure Methods 0.000 claims description 17
- 238000012423 maintenance Methods 0.000 claims description 16
- 238000007599 discharging Methods 0.000 claims description 13
- 238000001035 drying Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000011068 loading method Methods 0.000 claims description 6
- 239000006227 byproduct Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 230000006837 decompression Effects 0.000 claims description 4
- 239000000243 solution Substances 0.000 description 123
- 230000008569 process Effects 0.000 description 22
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004064 recycling Methods 0.000 description 4
- 238000009834 vaporization Methods 0.000 description 4
- 230000008016 vaporization Effects 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 239000012487 rinsing solution Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 238000013022 venting Methods 0.000 description 1
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Abstract
本發明涉及一種蝕刻裝置及其蝕刻方法,包含:蝕刻液供應部,蝕刻液供應部向蝕刻腔室供應蝕刻液;沖洗液供應部,沖洗液供應部向蝕刻腔室供應沖洗液;清洗液供應部,清洗液供應部向蝕刻腔室供應清洗液;及第一加壓維持部,第一加壓維持部使蝕刻腔室與蝕刻液供應部中至少任意一個維持在加壓環境。
Description
本發明涉及一種能夠提高蝕刻性能的蝕刻裝置及其蝕刻方法。
氮化矽膜在半導體製程中用作代表性的絕緣膜,氮化矽膜構成與矽氧化膜、多晶矽膜、矽對象體表面等接觸的結構,借助於CVD(Chemical vapor deposition:化學氣相沉積)製程而沉積,其透過乾式蝕刻及濕式蝕刻而去除。
乾式蝕刻主要加入氟類氣體和惰性氣體等,在真空狀態下進行,用於執行乾式蝕刻的裝備價格昂貴,因而在商業應用方面存在限制。因此,利用磷酸的濕式蝕刻比乾式蝕刻應用更廣泛。
濕式蝕刻是借助於蝕刻液的化學反應而選擇性地在對象體(基板等)中蝕刻希望的對象層,可以根據要求的特性或蝕刻度等,簡便地混合組成具有與此相符的比例的蝕刻液而進行作業,提供比乾式蝕刻進一步提高的作業相容性,一次可以處理大量的對象體,且裝置的價格低廉。
可是,濕式蝕刻在進行蝕刻時,蝕刻液的一部分汽化,對象體的溫度會因汽化熱下降,由於蝕刻液的汽化,蝕刻液的濃度控制困難,因而發生損失。因此,為了恆定地維持蝕刻液的濃度,現行正在將大量的去離子水及蝕
刻液投入蝕刻槽而執行對象體的蝕刻,由於投入大量的去離子水及蝕刻液,造成經濟上的損失大。
因此,需要一種能夠在對蝕刻腔室加壓的情況下,防止蝕刻液的汽化現象,可以恆定地保持蝕刻液的濃度,顯著提高相對於矽氧化膜的氮化矽膜選擇度的技術。
作為與本發明相關的現有文獻,有韓國授權專利第10-0691479號(2007年2月28日),在現有文獻中揭露了一種大面積基板的蝕刻裝置。
本發明提供一種能夠提高蝕刻性能的蝕刻裝置及其蝕刻方法。
本發明一個實施例的蝕刻裝置的特徵在於,包含:蝕刻液供應部,蝕刻液供應部向蝕刻腔室供應蝕刻液;沖洗液供應部,沖洗液供應部向蝕刻腔室供應沖洗液;清洗液供應部,清洗液供應部向蝕刻腔室供應清洗液;及第一加壓維持部,第一加壓維持部使蝕刻腔室與蝕刻液供應部中至少任意一個維持在加壓環境。
另外,可以還具備:加壓儲存部,加壓儲存部容納從蝕刻腔室排出的沖洗液與清洗液中的至少任意一種;及第二加壓維持部,第二加壓維持部將加壓儲存部維持在加壓環境。
另外,可以具備:供應管線部,供應管線部連接蝕刻液供應部與蝕刻腔室;循環管線部,循環管線部連接供應管線部與蝕刻液供應部;及回收管線部,回收管線部將蝕刻腔室排出的蝕刻液供應到蝕刻液供應部。
另外,可以具備:供應開閉部,供應開閉部選擇性地開閉供應管線部;循環開閉部,循環開閉部選擇性地開閉循環管線部;及回收開閉部,回收開閉部選擇性地開閉回收管線部。
另外,蝕刻液供應部可以具備:儲存腔室,儲存腔室儲存有蝕刻液;抽吸部,抽吸部設置於供應管線部,使蝕刻液移動;及溫度維持部,溫度維持部使儲存腔室儲存的蝕刻液維持在預定溫度。
另外,溫度維持部可以具備:加熱器,加熱器設置於儲存箱;及溫度控制部,溫度控制部感測蝕刻液的溫度,控制加熱器的驅動而使得蝕刻液維持在預定溫度。
另外,可以還具備連接蝕刻腔室與加壓儲存部的加壓排出管線部。
另外,可以還具備選擇性地開閉加壓排出管線部的加壓開閉部。
另外,可以還具備:排出管線部,排出管線部將蝕刻腔室排出的沖洗液與蝕刻液中的任意一種排出到外部;及排出開閉部,排出開閉部選擇性地開閉排出管線部。
另外,可以還具備:沖洗液管線部,沖洗液管線部連接沖洗液供應部與蝕刻腔室;清洗液管線部,清洗液管線部連接清洗液供應部與蝕刻腔室;沖洗開閉部,沖洗開閉部選擇性地開閉沖洗液管線部;及清洗開閉部,清洗開閉部選擇性地開閉清洗液管線部。
另外,蝕刻液供應部可以在蝕刻液的溫度為預定溫度以下時,中止蝕刻液向蝕刻腔室的供應,將蝕刻液加熱到預定溫度。
另一方面,本發明另一實施例的蝕刻方法的特徵在於,包含:打開蝕刻腔室而安放對象體的載入步驟;對蝕刻腔室的內部加壓的加壓步驟;向蝕刻腔室內供應蝕刻液來蝕刻對象體的蝕刻步驟;向蝕刻腔室內供應沖洗液來
去除存留於對象體的副產物和蝕刻液的沖洗步驟;向蝕刻腔內供應清洗液來去除存留於對象體的沖洗液的清洗步驟;及打開蝕刻腔室而將對象體排出到外部的卸載步驟。
另外,可以還包含:當蝕刻液的溫度為預定溫度以下時,將蝕刻液加熱到預定溫度或高於預定溫度的加熱步驟。
另外,加熱步驟可以切斷蝕刻液向蝕刻腔室的供應,使蝕刻液在循環管線部中循環、加熱。
另外,蝕刻步驟可以使循環管線部、沖洗液管線部和清洗液管線部封閉,使蝕刻液透過供應液管線部和蝕刻腔室及回收管線部循環並進行蝕刻。
另外,沖洗步驟與清洗步驟中至少任意一個可以還包含:使回收管線部封閉,將沖洗液與清洗液中至少任意一種排出到加壓儲存部的排出步驟。
另外,排出步驟在將加壓儲存部維持在加壓環境的同時,排出沖洗液與清洗液中至少任意一種。
另外,在卸載步驟或卸載步驟之前,可以還包含使對象體乾燥的乾燥步驟。
另外,在卸載步驟之前,可以還包含使蝕刻腔室的內部壓力排出到外部的減壓步驟。
另外,蝕刻液可以選擇性地使用HF、HNO3、H2O2、IPA、NH4OH、H3PO4、H2SO4中至少一種或一種以上的混合物。
本發明一個實施例的蝕刻裝置及其蝕刻方法在蝕刻時,使蝕刻腔室的內部維持在加壓環境,從而可以防止汽化現象,可以恆定地維持蝕刻液的濃度,可以提高蝕刻選擇度。
另外,由於蝕刻液的濃度保持恆定,因而不要求用於維持蝕刻液濃度的另外的去離子水及蝕刻液的追加投入,可以提高製品收率,可以實現減少蝕刻液消耗量等,在經濟方面可以極大節省費用。
而且,在對象體浸於蝕刻液的狀態下實現蝕刻,因而可以較厚地形成蝕刻液的液膜,可以提高蝕刻性能。
100:蝕刻腔室
200:蝕刻液供應部
210:儲存腔室
220:抽吸部
230:溫度維持部
231:加熱器
232:溫度控制部
241:供應管線部
242:循環管線部
243:回收管線部
244:供應開閉部
245:循環開閉部
246:回收開閉部
300:沖洗液供應部
311:沖洗液管線部
312:沖洗開閉部
400:清洗液供應部
411:清洗液管線部
412:清洗開閉部
500:第一加壓維持部
600:加壓儲存部
611:加壓排出管線部
612:加壓開閉部
621:排出管線部
622:排出開閉部
700:第二加壓維持部
L1:蝕刻液
L2:沖洗液
L3:清洗液
圖1是用於顯示本發明一個實施例的蝕刻裝置及其蝕刻方法的圖。
圖2是用於顯示在本發明另一實施例的蝕刻裝置及其蝕刻方法中應用加壓
儲存部的狀態的圖。
下面參照附圖,詳細說明本發明的較佳實施例。
如果參照後面與附圖一同詳細敘述的實施例,本發明的優點及特徵以及達成其的方法將會明確。
但是,本發明並非限定於以下揭露的實施例,可以以互不相同的多樣形態體現,不過,本實施例提供用於使本發明的揭露更完整,向本發明所屬技術領域之具備通常知識者完整地告知發明的範疇,本發明只由申請專利範圍的範疇所定義。
另外,在說明本發明方面,當判斷認為相關習知技術等可能混淆本發明要旨時,省略與其相關的詳細說明。
圖1是用於顯示本發明一個實施例的蝕刻裝置及其蝕刻方法的圖,圖2是用於顯示在本發明另一實施例的蝕刻裝置及其蝕刻方法中應用加壓儲存部的狀態的圖。
如果參照圖1與圖2,本發明一個實施例的蝕刻裝置包含蝕刻腔室100、蝕刻液供應部200、沖洗液供應部300、清洗液供應部400及第一加壓維持部500。
蝕刻腔室100能開閉地設置,高溫的蝕刻液(磷酸:H3PO4等)L1與常溫的沖洗液(磷酸:H3PO4等)L2及清洗液(水等)L3可以選擇性地供應到內部的壓力室。壓力室可以借助於第一加壓維持部500而維持在加壓環境。
在本發明一個實施例的蝕刻裝置中,蝕刻液L1及沖洗液L2並不限定,可以使用多樣的種類。例如,本發明一個實施例的蝕刻液L1及沖洗液L2可以選擇性地使用HF、HNO3、H2O2、IPA、NH4OH、H3PO4、H2SO4中至少一種或一種以上的混合物。
蝕刻腔室100可以包含第一腔室及在第一腔室的上部能開閉地設置的第二腔室,在蝕刻腔室100的內部可以設置用於安放蝕刻對象體的托架(圖上未示出)。
就本發明一個實施例的托架而言,可以使用在將對象體安放於支撐銷(圖上未示出)後,利用卡盤(圖上未示出)使對象體固定(卡緊)的方式。
另一方面,不同於使對象體安放於托架(圖上未示出)的支撐銷後利用卡盤使對象體固定的方式,本發明另一實施例的托架可以使用在托架的上面形成蝕刻性能提高部(圖上未示出)來安放對象體的方式。
蝕刻性能提高部可以凹陷地形成,以便對象體以插入狀態安放,浸於蝕刻液中,蝕刻性能提高部可以具備:安放面(圖上未示出),安放面沿
邊緣形成,以便供對象體安放;及凸出部(圖上未示出),凸出部沿安放面的邊緣形成,在對象體的上部容納蝕刻液。
另外,在蝕刻腔室100中可以形成有一個以上的投入口(圖上未示出),以便向壓力室的內部供應蝕刻液L1和沖洗液L2及清洗液(SC1、DHF、IPA、DIW等)L3,在蝕刻腔室100的下部,可以形成有用於使蝕刻液L1和沖洗液L2及清洗液L3排出到外部的排出部(圖上未示出)。
蝕刻液供應部200以高溫向蝕刻腔室100供應蝕刻液L1,蝕刻液供應部200在蝕刻液L1的溫度為預定溫度以下時,中止蝕刻液L1向蝕刻腔室100的供應,將蝕刻液L1加熱到預定溫度。
其中,蝕刻液供應部200可以包含儲存腔室210、抽吸部220及溫度維持部230。儲存腔室210儲存有蝕刻液,抽吸部220設置於後述的供應管線部241,使蝕刻液L1移動,溫度維持部230將儲存腔室210儲存的蝕刻液L1維持在預定溫度。
溫度維持部230可以具備:加熱器231,加熱器231設置於蝕刻液供應部200;及溫度控制部232,溫度控制部232感測蝕刻液L1的溫度,控制加熱器231的驅動以便蝕刻液L1維持在預定溫度。加熱器231將蝕刻液供應部200容納的蝕刻液L1加熱到預定溫度,抽吸部220可以以連接於供應管線部241的狀態傳遞抽吸壓力。
而且,可以包含:供應管線部241,供應管線部241連接蝕刻液供應部200與蝕刻腔室100;循環管線部242,循環管線部242連接供應管線部241與蝕刻液供應部200;及回收管線部243,回收管線部243將蝕刻腔室100排出的蝕刻液L1供應到蝕刻液供應部200。
另外,可以包含選擇性地開閉供應管線部241的供應開閉部244、選擇性地開閉循環管線部242的循環開閉部245及選擇性地開閉回收管線部243的回收開閉部246。
沖洗液供應部300向蝕刻腔室100供應沖洗液L2,可以具備連接沖洗液供應部300與蝕刻腔室100的沖洗液管線部311及選擇性地開閉沖洗液管線部311的沖洗開閉部312。
清洗液供應部400向蝕刻腔室100供應清洗液,可以還具備連接清洗液供應部400與蝕刻腔室100的清洗液管線部411及選擇性地開閉清洗液管線部411的清洗開閉部412。
第一加壓維持部500使蝕刻腔室100與蝕刻液供應部200中至少任意一個維持在加壓環境。此時,可以一個第一加壓維持部500統合控制蝕刻腔室100與蝕刻液供應部200,或第一加壓維持部500分別連接於蝕刻腔室100與蝕刻液供應部200而獨立地進行控制。
另外,可以還具備:加壓儲存部600,加壓儲存部600容納從蝕刻腔室100排出的沖洗液L2與清洗液L3中至少任意一種;及第二加壓維持部700,第二加壓維持部700將加壓儲存部600維持在加壓環境。
本發明一個實施例的蝕刻裝置如圖1所示,可以還具備:排出管線部621,排出管線部621將蝕刻腔室100排出的沖洗液L2與清洗液L3中的任意一種排出到外部;及排出開閉部622,排出開閉部622選擇性地開閉排出管線部621。
即,通過蝕刻腔室100的排出口排出到外部的沖洗液L2與清洗液L3中的任意一種,可以在打開排出開閉部622後透過排出管線部621排出到外部。
另一方面,本發明另一實施例的蝕刻裝置如圖2所示,可以還具備連接蝕刻腔室100與加壓儲存部600的加壓排出管線部611及選擇性地開閉加壓排出管線部611的加壓開閉部612。
即,通過蝕刻腔室100的排出口排出到外部的沖洗液L2與清洗液L3中的任意一種,可以在打開加壓開閉部612後透過加壓排出管線部611儲存於加壓儲存部600,在使加壓儲存部600的壓力排出到外部的狀態下,可以使加壓儲存部600儲存的沖洗液L2與清洗液L3中的任意一種排出到外部。
說明蝕刻液供應部200的蝕刻液L1供應過程時,打開供應開閉部244與回收開閉部246,透過供應管線部241向蝕刻腔室100的投入口供應高溫的蝕刻液L1,使從蝕刻腔室100的排出口排出的蝕刻液L1透過回收管線部243移動到蝕刻液供應部200。
與此同時,封閉循環開閉部245、沖洗開閉部312和清洗開閉部412,且封閉排出開閉部622或加壓開閉部612。此時,循環管線部242、沖洗液管線部311及清洗液管線部411封閉,且排出管線部621或加壓排出管線部611封閉。
在此過程中,蝕刻液供應部200在蝕刻液L1的溫度為預定溫度以下時,中止蝕刻液L1向蝕刻腔室100的供應,將蝕刻液L1加熱到預定溫度。
在蝕刻液L1的溫度為預定溫度以下時,打開循環開閉部245使蝕刻液L1沿著循環管線部242循環,使供應開閉部244與回收開閉部246封閉。
在此狀態下,蝕刻液L1只透過連接供應開閉部244與儲存腔室210的供應管線部241的一部分區間和循環管線部242而循環,蝕刻液L1被加熱器231加熱,直至達到預定溫度時為止。
然後,當蝕刻液L1的溫度達到預定溫度時,打開供應開閉部244與回收開閉部246,透過供應管線部241向蝕刻腔室100的投入口供應高溫的蝕刻液L1,透過回收管線部243將從蝕刻腔室100的排出口排出的蝕刻液L1移動到蝕刻液供應部200。
即,在蝕刻液供應部200的蝕刻液L1供應過程中,當蝕刻液L1的溫度下降到預定溫度以下時,中止蝕刻過程,進行使蝕刻液L1循環而加熱到預定溫度的過程,由此,可以使蝕刻液L1維持在適合製程的溫度。
如果說明沖洗液供應部300的沖洗液L2供應過程,打開沖洗開閉部312,透過沖洗液管線部311向蝕刻腔室100的投入口供應常溫的沖洗液L2,打開排出開閉部622或加壓開閉部612。
與此同時,封閉供應開閉部244、回收開閉部246、循環開閉部245及清洗開閉部412。此時,供應管線部241、回收管線部243、循環管線部242及清洗液管線部411封閉。
在此過程中,通過蝕刻腔室100的排出口排出到外部的沖洗液L2,可以透過排出管線部621排出到外部,或透過加壓排出管線部611儲存於加壓儲存部600。
說明清洗液供應部400的清洗液L3供應過程時,打開清洗開閉部412,透過清洗液管線部411向蝕刻腔室100的投入口供應清洗液L3,與沖洗液L2供應過程一樣,打開排出開閉部622或加壓開閉部612。
與此同時,封閉供應開閉部244、回收開閉部246、循環開閉部245及清洗開閉部412。此時,供應管線部241、回收管線部243、循環管線部242及清洗液管線部411封閉。
在此過程中,通過蝕刻腔室100的排出口排出到外部的清洗液L3,可以透過排出管線部621排出到外部,或透過加壓排出管線部611儲存於加壓儲存部600。
下面說明本發明一個實施例的蝕刻方法,對於與前述構成相同的構成,不再反復說明。
本發明一個實施例的蝕刻方法包含:打開蝕刻腔室而安放對象體(基板等)的載入步驟;對蝕刻腔室的內部加壓的加壓步驟;向蝕刻腔室內供應蝕刻液來蝕刻對象體的蝕刻步驟;向蝕刻腔室內供應沖洗液來去除存留於對象體的副產物和蝕刻液的沖洗步驟;向蝕刻腔內供應清洗液來去除存留於對象體的沖洗液的清洗步驟;及打開蝕刻腔室而將對象體排出到外部的卸載步驟。
載入步驟是使對象體安放於蝕刻腔室100的內部的過程。載入步驟可以在打開蝕刻腔室100後,將對象體安放於蝕刻腔室100的內部。
加壓步驟在封閉蝕刻腔室100後,驅動第一加壓維持部500向蝕刻腔室100的壓力室供應氣體(N2等),將蝕刻腔室100的壓力室加壓到預定壓力。
蝕刻步驟驅動蝕刻液供應部200,透過蝕刻腔室100的投入口噴射高溫的蝕刻液L1。此時,蝕刻步驟打開供應開閉部244與回收開閉部246,透過供應管線部241向蝕刻腔室100的投入口供應高溫的蝕刻液L1,將透過蝕刻腔室100的排出口排出的蝕刻液L1透過回收管線部243移動到蝕刻液供應部200。
與此同時,封閉循環開閉部245、沖洗開閉部312和清洗開閉部412,封閉排出開閉部622或加壓開閉部612。此時,循環管線部242和沖洗液管線部311及清洗液管線部411封閉,排出管線部621或加壓排出管線部611封閉。
蝕刻步驟中可以封閉循環管線部242、沖洗液管線部311和清洗液管線部411,透過供應管線部241和蝕刻腔室100及回收管線部243而使蝕刻液L1循環並進行蝕刻。
另一方面,可以還包含:當蝕刻液的溫度為預定溫度以下時,將蝕刻液加熱到預定溫度或高於預定溫度的加熱步驟。加熱步驟時可以切斷向蝕刻腔室100的蝕刻液L1供應,使蝕刻液L1在循環管線部242中循環並加熱。
如果更詳細地說明,加熱步驟在蝕刻液L1的溫度為預定溫度以下時,打開循環開閉部245使蝕刻液L1沿著循環管線部242循環,封閉供應開閉部244與回收開閉部246。
在該狀態下,蝕刻液L1只透過連接供應開閉部244與儲存腔室210的供應管線部241的一部分區間和循環管線部242進行循環,蝕刻液L1借助於加熱器231而加熱至達到預定溫度時為止。
然後,當蝕刻液L1的溫度達到預定溫度時,打開供應開閉部244和回收開閉部246,透過供應管線部241向蝕刻腔室100的投入口供應高溫的蝕刻液L1,使透過蝕刻腔室100的排出口排出的蝕刻液L1透過回收管線部243移動到蝕刻液供應部200的儲存腔室210。
即,在蝕刻液供應部200的蝕刻液L1供應過程中,當蝕刻液L1的溫度下降到預定溫度以下時,中止蝕刻過程,進行使蝕刻液L1循環而加熱到預定溫度的過程,由此,可以使蝕刻液L1維持在適合製程的溫度。
沖洗步驟是用於驅動沖洗液供應部300並向蝕刻腔室100內供應沖洗液L2來清洗對象體的過程。沖洗步驟中透過蝕刻腔室100的投入口供應常溫的沖洗液(磷酸:H3PO4等),使對象體冷卻既定時間,去除存留於對象體的副產物和蝕刻液L1。
此時,沖洗步驟中打開沖洗開閉部312,透過沖洗液管線部311向蝕刻腔室100的投入口供應常溫的沖洗液L2,封閉供應開閉部244、回收開閉部246、循環開閉部245及清洗開閉部412。此時,供應管線部241、回收管線部243、循環管線部242及清洗液管線部411封閉。
清洗步驟是用於驅動清洗液供應部400而透過蝕刻腔室100的投入口供應清洗液(水等)L3來清洗對象體的過程。此時,清洗步驟中打開清洗開閉部412,透過清洗液管線部411向蝕刻腔室100的投入口供應清洗液L3。
另外,沖洗步驟與清洗步驟中的至少任意一個可以還包含:封閉回收管線部243,將沖洗液L2與清洗液L3中的至少任意一種排出到加壓儲存部600的排出步驟。
其中,排出步驟時打開排出開閉部622或加壓開閉部612,封閉供應開閉部244與回收開閉部246及循環開閉部245。此時,供應管線部241和回收管線部243及循環管線部242封閉。
在此過程中,通過蝕刻腔室100的排出口排出到外部的清洗液L3,可以透過排出管線部621排出到外部,或透過加壓排出管線部611儲存於加壓儲存部600。此時,可以在將加壓儲存部600維持在加壓環境的同時,排出沖洗液L2與清洗液L3中的至少任意一種。
卸載步驟是使對象體排出到外部的過程,在卸載步驟或卸載步驟之前,可以還包含乾燥對象體的乾燥步驟。在卸載步驟之前,可以還包含使蝕刻腔室100的內部壓力排出到外部的減壓步驟。
乾燥步驟的乾燥方式可以根據需要而多樣地應用,在乾燥步驟和清洗步驟中,可以使蝕刻腔室100的壓力室維持在加壓環境,或使壓力室的內部壓力排氣到外部而在大氣壓狀態下實施清洗及乾燥。
減壓步驟中可以驅動排氣部(圖上未示出),使壓力室的壓力排出到外部,借助於排氣部的壓力排出而使壓力室維持在大氣壓狀態。
以上就本發明的蝕刻裝置及其蝕刻方法的具體實施例進行了說明,在不超出本發明範圍的限度內,可以進行多種變形實施,這是不言而喻的。
因此,本發明的範圍不得侷限於說明的實施例而確定,應根據後述的申請專利範圍以及與該申請專利範圍等同的範圍確定。
即,前述實施例在所有方面應理解為只是示例而非限定,與詳細說明相比,本發明的範圍由後述的申請專利範圍所表示,從申請專利範圍的意
義及範圍以及其等價概念導出的所有變更或變形的形態應解釋為包含於本發明的範圍。
100:蝕刻腔室
200:蝕刻液供應部
210:儲存腔室
220:抽吸部
230:溫度維持部
231:加熱器
232:溫度控制部
241:供應管線部
242:循環管線部
243:回收管線部
244:供應開閉部
245:循環開閉部
246:回收開閉部
300:沖洗液供應部
311:沖洗液管線部
312:沖洗開閉部
400:清洗液供應部
411:清洗液管線部
412:清洗開閉部
500:第一加壓維持部
621:排出管線部
622:排出開閉部
700:第二加壓維持部
L1:蝕刻液
L2:沖洗液
L3:清洗液
Claims (18)
- 一種蝕刻裝置,其中,包含:一蝕刻液供應部,該蝕刻液供應部向一蝕刻腔室供應蝕刻液;一沖洗液供應部,該沖洗液供應部向該蝕刻腔室供應沖洗液;一清洗液供應部,該清洗液供應部向該蝕刻腔室供應清洗液;一第一加壓維持部,該第一加壓維持部使該蝕刻腔室與該蝕刻液供應部中至少任意一個維持在加壓環境;一加壓儲存部,該加壓儲存部容納從該蝕刻腔室排出的該沖洗液與該清洗液中至少任意一種;及一第二加壓維持部,該第二加壓維持部將該加壓儲存部維持在加壓環境。
- 一種蝕刻裝置,其中,包含:一蝕刻液供應部,該蝕刻液供應部向一蝕刻腔室供應蝕刻液;一沖洗液供應部,該沖洗液供應部向該蝕刻腔室供應沖洗液;一清洗液供應部,該清洗液供應部向該蝕刻腔室供應清洗液;一第一加壓維持部,該第一加壓維持部使該蝕刻腔室與該蝕刻液供應部中至少任意一個維持在加壓環境;一供應管線部,該供應管線部連接該蝕刻液供應部與該蝕刻腔室;一循環管線部,該循環管線部連接該供應管線部與該蝕刻液供應部;及 一回收管線部,該回收管線部將該蝕刻腔室排出的該蝕刻液供應到該蝕刻液供應部。
- 如請求項2所述的蝕刻裝置,其中,包含:一供應開閉部,該供應開閉部選擇性地開閉該供應管線部;一循環開閉部,該循環開閉部選擇性地開閉該循環管線部;及一回收開閉部,該回收開閉部選擇性地開閉該回收管線部。
- 如請求項3所述的蝕刻裝置,其中,該蝕刻液供應部具備:一儲存腔室,該儲存腔室儲存有該蝕刻液;一抽吸部,該抽吸部設置於該供應管線部,使該蝕刻液移動;及一溫度維持部,該溫度維持部使該儲存腔室儲存的該蝕刻液維持在預定溫度。
- 如請求項4所述的蝕刻裝置,其中,該溫度維持部包含:一加熱器,該加熱器設置於該儲存腔室;及一溫度控制部,該溫度控制部感測該蝕刻液的溫度,控制該加熱器的驅動而使得該蝕刻液維持在預定溫度。
- 如請求項1所述的蝕刻裝置,其中,還包含連接該蝕刻腔室與該加壓儲存部的一加壓排出管線部。
- 如請求項6所述的蝕刻裝置,其中, 還具備選擇性地開閉該加壓排出管線部的一加壓開閉部。
- 如請求項1所述的蝕刻裝置,其中,還具備:一排出管線部,該排出管線部將該蝕刻腔室排出的該沖洗液與該蝕刻液中的任意一種排出到外部;及一排出開閉部,該排出開閉部選擇性地開閉該排出管線部。
- 如請求項1所述的蝕刻裝置,其中,還具備:一沖洗液管線部,該沖洗液管線部連接該沖洗液供應部與該蝕刻腔室;一清洗液管線部,該清洗液管線部連接該清洗液供應部與該蝕刻腔室;一沖洗開閉部,該沖洗開閉部選擇性地開閉該沖洗液管線部;及一清洗開閉部,該清洗開閉部選擇性地開閉該清洗液管線部。
- 如請求項1所述的蝕刻裝置,其中,該蝕刻液供應部在該蝕刻液的溫度為預定溫度以下時,中止該蝕刻液向該蝕刻腔室的供應,將該蝕刻液加熱到該預定溫度。
- 一種蝕刻方法,其中,包含:打開蝕刻腔室而安放對象體的一載入步驟;對該蝕刻腔室的內部加壓的一加壓步驟;向該蝕刻腔室內供應蝕刻液來蝕刻該對象體的一蝕刻步驟; 向該蝕刻腔室內供應沖洗液來去除存留於該對象體的副產物和該蝕刻液的一沖洗步驟;向該蝕刻腔室內供應清洗液來去除存留於該對象體的該沖洗液的一清洗步驟;打開該蝕刻腔室而將該對象體排出到外部的一卸載步驟;及當該蝕刻液的溫度為預定溫度以下時,將該蝕刻液加熱到該預定溫度或高於該預定溫度的一加熱步驟。
- 如請求項11所述的蝕刻方法,其中,該加熱步驟切斷該蝕刻液向該蝕刻腔室的供應,使該蝕刻液在一循環管線部中循環、加熱。
- 如請求項11所述的蝕刻方法,其中,該蝕刻步驟使一循環管線部、一沖洗液管線部和一清洗液管線部封閉,使該蝕刻液透過一供應管線部和該蝕刻腔室及一回收管線部循環並進行蝕刻。
- 一種蝕刻方法,其中,包含:打開蝕刻腔室而安放對象體的一載入步驟;對該蝕刻腔室的內部加壓的一加壓步驟;向該蝕刻腔室內供應蝕刻液來蝕刻該對象體的一蝕刻步驟;向該蝕刻腔室內供應沖洗液來去除存留於該對象體的副產物和該蝕刻液的一沖洗步驟;向該蝕刻腔室內供應清洗液來去除存留於該對象體的該沖洗液的一清洗步驟; 打開該蝕刻腔室而將該對象體排出到外部的一卸載步驟;及該沖洗步驟與該清洗步驟中至少任意一個還包含:使一回收管線部封閉,將該沖洗液與該清洗液中至少任意一種排出到一加壓儲存部的一排出步驟。
- 如請求項14所述的蝕刻方法,其中,該排出步驟在將該加壓儲存部維持在加壓環境的同時,排出該沖洗液與該清洗液中至少任意一種。
- 如請求項11所述的蝕刻方法,其中,在該卸載步驟或該卸載步驟之前,還包含使該對象體乾燥的一乾燥步驟。
- 如請求項11所述的蝕刻方法,其中,在該卸載步驟之前,還包含使該蝕刻腔室的內部壓力排出到外部的一減壓步驟。
- 如請求項11所述的蝕刻方法,其中,該蝕刻液選擇性地使用HF、HNO3、H2O2、IPA、NH4OH、H3PO4、H2SO4中至少一種或一種以上的混合物。
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- 2020-04-22 CN CN202080016474.9A patent/CN113614901A/zh active Pending
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KR20200124173A (ko) | 2020-11-02 |
TW202100726A (zh) | 2021-01-01 |
TWI771670B (zh) | 2022-07-21 |
WO2020218813A1 (ko) | 2020-10-29 |
CN113614901A (zh) | 2021-11-05 |
TW202103240A (zh) | 2021-01-16 |
US20220189796A1 (en) | 2022-06-16 |
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