US20220108897A1 - Etching device - Google Patents

Etching device Download PDF

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Publication number
US20220108897A1
US20220108897A1 US17/426,460 US202017426460A US2022108897A1 US 20220108897 A1 US20220108897 A1 US 20220108897A1 US 202017426460 A US202017426460 A US 202017426460A US 2022108897 A1 US2022108897 A1 US 2022108897A1
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United States
Prior art keywords
unit
chamber
etching
etchant
opening
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US17/426,460
Inventor
Seung Hoon Lee
Sung Won MO
Joo Hyoung Lee
Beom Su KI
Seong Hwan Park
Hyun Dong CHO
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Zeus Co Ltd
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Zeus Co Ltd
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Assigned to ZEUS CO., LTD. reassignment ZEUS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHO, HYUN DONG, KI, BEOM SU, LEE, JOO HYOUNG, LEE, SEUNG HOON, MO, SUNG WON, PARK, SEONG HWAN
Publication of US20220108897A1 publication Critical patent/US20220108897A1/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
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    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Definitions

  • the present invention relates to an etching device with improved etching performance.
  • a silicon nitride film is used as a representative insulating film in a semiconductor manufacturing process and has a structure in which the silicon nitride film is in contact with a silicon oxide film, a polysilicon film, a silicon object surface, or the like. Moreover, the silicon nitride film is deposited by a chemical vapor deposition (CVD) process and removed by a dry etching device and a wet etching device.
  • CVD chemical vapor deposition
  • a dry etching device performs dry etching in a vacuum state mainly with a fluorine-based gas and an inert gas.
  • the dry etching has a limit to commercial use because a device for performing the dry etching is expensive. Therefore, wet etching using phosphoric acid is widely used rather than the dry etching.
  • a desired target layer is selectively etched from an object (substrate, or the like) by a chemical reaction of an etchant, and depending on required characteristics, an etching degree, or the like, an etchant having a composition ratio corresponding thereto may be easily mixed to perform the etching. Therefore, compared to the dry etching, it is possible to provide improved work compatibility and process many objects at once, and thus, the device is inexpensive.
  • the wet etching device includes an etching chamber which is openable or closable and in which an object is located, an etchant supply unit for supplying an etchant to the etching chamber, a cleaning liquid supply unit for supplying a cleaning liquid to the etching chamber, and a drive unit for opening or closing the etching chamber.
  • a portion of the etchant is vaporized during the etching, and thus, a temperature of the object may be lowered by heat of vaporization, it is difficult to control a concentration of the etchant due to the vaporization of the etchant, and a loss occurs. Accordingly, in order to keep the concentration of the etchant constant, currently, a large amount of deionized water and etchant are added to an etching tank to etch the object, and an economic loss is large due to the addition of the large amount of deionized water and etchant.
  • the present invention is directed to providing an etching device with improved etching performance.
  • One aspect of the present invention provides an etching device including an etching chamber, an opening/closing unit configured to open or close the etching chamber, and a locking unit configured to selectively lock the opening/closing unit.
  • the locking unit may be moved between a locking position at which movement of the opening/closing unit is locked and an unlocking position at which the locking is released.
  • the opening/closing unit may include a chamber opening/closing unit configured to selectively open or close the etching chamber, and an opening/closing drive unit configured to drive the chamber opening/closing unit.
  • the etching device may further include a first guide portion configured to guide movement of the chamber opening/closing unit.
  • the etching device may further include a pressurization maintaining unit configured to maintain the etching chamber in a pressurized atmosphere.
  • the pressurization maintaining unit may include a pressurizing unit configured to maintain the etching chamber at a set pressure and an exhaust unit configured to discharge a gas inside the etching chamber to the outside.
  • the locking unit may lock the opening/closing unit so that the etching chamber in the pressurized atmosphere is closed and release the locking of the opening/closing unit when the pressurized atmosphere is released.
  • the etching device may further include a first locking unit provided in the opening/closing unit; and a second locking unit provided in the locking unit and interlocked with the first locking unit to lock movement of the opening/closing unit.
  • the etching device may further include a second guide portion configured to guide movement of the second locking unit.
  • the pressurization maintaining unit may maintain a pressure of 0.1 bar to 10 bar in the etching chamber.
  • the etching device may further include an etchant supply unit configured to supply an etchant to the etching chamber.
  • the etchant selectively may use at least one or a mixture of one or more of HF, NHO 3 , H 2 O 2 , IPA, NH 4 OH, H 2 O, H 3 PO 4 , and H 2 SO 4 .
  • an etching chamber is locked at a closed position, and when the etching chamber is maintained in a pressurized atmosphere, it is possible to prevent the etching chamber from being opened by a high pressure.
  • etching chamber in the pressurized atmosphere during etching, vaporization can be prevented, a concentration of an etchant can be kept constant, and an etching selectivity can be improved.
  • etching is performed in a state where an object is immersed in the etchant, a thick liquid film of the etchant can be formed, and thus, it is possible to improve etching performance.
  • FIG. 1 is a perspective view illustrating an etching device according to one embodiment of the present invention.
  • FIG. 2 is a front view illustrating a state where a second chamber of the etching device is open according to one embodiment of the present invention.
  • FIG. 3 is a front view illustrating a state where the second chamber of the etching device is closed according to one embodiment of the present invention.
  • FIG. 4 is a side view illustrating the state where the second chamber of the etching device is open according to one embodiment of the present invention.
  • FIG. 5 is a side view illustrating the state where the second chamber of the etching device is closed according to one embodiment of the present invention.
  • FIG. 6 is a front cross-sectional view illustrating a state where the second chamber of the etching device is closed according to one embodiment of the present invention.
  • FIG. 7 is a perspective view illustrating the second chamber, a first nozzle, and a second nozzle of the etching device according to one embodiment of the present invention.
  • FIG. 8 is a bottom view illustrating the second chamber, the first nozzle, and the second nozzle of the etching device according to one embodiment of the present invention.
  • FIG. 9 is a perspective view illustrating the first nozzle and the second nozzle of the etching device according to one embodiment of the present invention.
  • FIG. 10 is a configuration diagram illustrating a connection structure between an etchant supply unit, a rinsing liquid supply unit, and a cleaning liquid supply unit of the etching device according to one embodiment of the present invention.
  • FIG. 11 is a configuration diagram illustrating a connection structure between the etchant supply unit, the rinsing liquid supply unit, the cleaning liquid supply unit, and a pressurization storage unit of the etching device according to one embodiment of the present invention.
  • FIG. 12 is a front cross-sectional view illustrating an etching device according to another embodiment of the present invention.
  • FIG. 13 is a front cross-sectional view illustrating a process in which a second chamber of an etching device is opened and an object is supplied according to another embodiment of the present invention.
  • FIG. 14 is a perspective view illustrating a mounting table of the etching device according to another embodiment of the present invention.
  • FIG. 15 is a perspective view illustrating a raising/lowering unit of the etching device according to another embodiment of the present invention.
  • FIG. 16 is a block diagram illustrating an operation of an etching device according to one embodiment of the present invention.
  • FIG. 17 is a block diagram illustrating an etching process in an etching device according to one embodiment of the present invention.
  • FIG. 1 is a perspective view illustrating an etching device according to one embodiment of the present invention
  • FIG. 2 is a front view illustrating a state where a second chamber of the etching device is open according to one embodiment of the present invention
  • FIG. 3 is a front view illustrating a state where the second chamber of the etching device is closed according to one embodiment of the present invention
  • FIG. 4 is a side view illustrating the state where the second chamber of the etching device is open according to one embodiment of the present invention
  • FIG. 5 is a side view illustrating the state where the second chamber of the etching device is closed according to one embodiment of the present invention
  • FIG. 6 is a front cross-sectional view illustrating a state where the second chamber of the etching device is closed according to one embodiment of the present invention.
  • FIG. 7 is a perspective view illustrating the second chamber, a first nozzle, and a second nozzle of the etching device according to one embodiment of the present invention
  • FIG. 8 is a bottom view illustrating the second chamber, the first nozzle, and the second nozzle of the etching device according to one embodiment of the present invention
  • FIG. 9 is a perspective view illustrating the first nozzle and the second nozzle of the etching device according to one embodiment of the present invention.
  • FIG. 10 is a configuration diagram illustrating a connection structure between an etchant supply unit, a rinsing liquid supply unit, and a cleaning liquid supply unit of the etching device according to one embodiment of the present invention
  • FIG. 11 is a configuration diagram illustrating a connection structure between the etchant supply unit, the rinsing liquid supply unit, the cleaning liquid supply unit, and a pressurization storage unit of the etching device according to one embodiment of the present invention
  • FIG. 12 is a front cross-sectional view illustrating an etching device according to another embodiment of the present invention.
  • FIG. 13 is a front cross-sectional view illustrating a process in which a second chamber of an etching device is opened and an object is supplied according to another embodiment of the present invention
  • FIG. 14 is a perspective view illustrating a mounting table of the etching device according to another embodiment of the present invention
  • FIG. 15 is a perspective view illustrating a raising/lowering unit of the etching device according to another embodiment of the present invention.
  • the etching device includes an etching chamber 100 , an opening/closing unit 200 , and a locking unit 300 .
  • the etching chamber 100 is provided to be openable or closable, an etchant (phosphoric acid: H 3 PO 4 or the like) L 1 at high temperature, a rinsing liquid (phosphoric acid: H 3 PO 4 or the like) L 2 at room temperature, and a cleaning liquid (water or the like) L 3 may be selectively supplied to a pressure chamber 101 inside the etching chamber 100 , and a pressurized atmosphere of the pressure chamber 101 may be maintained by a pressurizing unit 800 described below.
  • an etchant phosphoric acid: H 3 PO 4 or the like
  • a rinsing liquid phosphoric acid: H 3 PO 4 or the like
  • a cleaning liquid water or the like
  • the etchant L 1 and the rinsing liquid L 2 are not limited, and various types may be used.
  • the etchant L 1 and rinsing liquid L according to one embodiment of the present invention may selectively use at least one or a mixture of one or more of HF, NHO 3 , H 2 O 2 , IPA, NH 4 OH, H 2 O, H 3 PO 4 , and H 2 SO 4 .
  • the etching chamber 100 may include a first chamber 110 and a second chamber 120 provided to be openable or closable above the first chamber 110 .
  • the pressure chamber 101 having a certain width is formed between the first chamber 110 and the second chamber 120 , and a first fastening portion 111 to which a rotating shaft 420 described below is coupled and a second fastening portion 112 to which a raising/lowering pin 530 described below is coupled may vertically pass through a lower portion of the first chamber 110 .
  • an accommodation portion 123 may be formed to be recessed downward in an upper portion of the first chamber 110 , mounting tables 401 and 402 for placing an object W may be located at an upper portion of the accommodation portion 123 , and an inclined portion 124 formed to be inclined downward along an edge of the accommodation portion 123 may be formed on a bottom surface of the accommodation portion 123 .
  • the inclined portion 124 may have an angle at which the etchant L 1 , the rinsing liquid L 2 , and the cleaning liquid L 3 dropped from above may be moved to the edge, a discharge unit 125 for discharging the etchant L 1 , the rinsing liquid L 2 , and the cleaning liquid L 3 accommodated in the accommodation portion 123 to the outside may be formed in the lower portion of the first chamber 110 , and the discharge unit 125 may be connected to an external storage unit (not illustrated).
  • the second chamber 120 is coupled to and separated from the upper portion of the first chamber 110 to open and close the pressure chamber 101 , and when the second chamber 120 is coupled to the first chamber 110 , an etchant inlet 121 is formed so that the etchant L 1 is supplied into the pressure chamber 101 .
  • the etchant inlet 121 horizontally passes through a side portion of the second chamber 120 to connect the pressure chamber 101 to the outside, and the etchant supply unit 600 may be connected to the etchant inlet 121 by the connector 610 .
  • the etchant supply unit 600 may supply the etchant L 1 at a high temperature through the etchant inlet 121 , and the second chamber 120 may be raised or lowered to an upper open position and a lower closed position by the opening/closing unit 200 .
  • the etchant supply unit 600 may circulate the etchant L 1 supplied into the pressure chamber 101 to the outside and then resupply the etchant L 1 through the etchant inlet 121 .
  • the etchant supply unit 600 may include a storage chamber, a heater, a valve, a pump, or the like, and the etchant supply unit 600 may further include a temperature controller for controlling a temperature of the etchant L 1 .
  • the etchant supply unit 600 may supply the etchant L 1 and the rinsing liquid L 2 but may constitute a separate rinsing liquid supply unit 650 .
  • the rinsing liquid supply unit 650 may inject the rinsing liquid L 2 into the pressure chamber 101 through the etchant inlet 121 or a separate rinsing liquid inlet.
  • the storage chamber may store the etchant L 1 at a predetermined pressure and may be connected to the etchant inlet 121 by the connector 610 , and the heater may be installed in the storage chamber to heat the etchant L 1 to a set temperature.
  • the valve may be installed in the connector 610 to change an open/close state, and the pump may transmit a pumping pressure in a state of being connected to the connector 610 .
  • the second chamber 120 may be provided with a cleaning liquid inlet 122 so that the cleaning liquid (SC1, DHF, IPA, DIW, or the like) L 3 is supplied from the outside.
  • the cleaning liquid supply unit 700 may be further connected to the cleaning liquid inlet 122 by a connector 710 .
  • the cleaning liquid inlet 122 may horizontally pass through a side portion of the second chamber 120 to connect the pressure chamber 101 to the outside.
  • the etching chamber 100 may include the pressurizing unit 800 for pressurizing the inside of the pressure chamber 101 and an exhaust unit 900 for discharging an internal pressure of the pressure chamber 101 to the outside.
  • the pressurizing unit 800 supplies a compressed gas (N 2 or the like) to the pressure chamber 101 in a state in which the first chamber 110 and the second chamber 120 are closed to maintain the pressure of the pressure chamber 101 at a set pressure.
  • the pressurizing unit 800 may supply a compressed gas into the pressure chamber 101 , and a detector (not illustrated) for measuring the internal pressure of the pressure chamber 101 may be electrically connected to the pressurizing unit 800 .
  • the exhaust unit 900 may discharge the gas in the pressure chamber 101 to the outside to generate a pressure difference between the etchant supply unit 600 and the storage chamber or maintain the pressure chamber 101 at an atmospheric pressure before the second chamber 120 is opened.
  • the opening/closing unit 200 is for opening or closing the etching chamber 100 , and the opening/closing unit 200 includes a chamber opening/closing unit 210 for selectively opening the etching chamber 100 and an opening/closing drive unit 220 for driving the chamber opening/closing unit 210 .
  • the chamber opening/closing unit 210 is provided to be raised or lowered, an upper end of the chamber opening/closing unit 210 is connected to the second chamber 120 , and the opening/closing drive unit 220 is connected to the chamber opening/closing unit 210 to transmit a raising/lowering driving force.
  • the chamber opening/closing unit 210 may have a vertical length, the upper end of the chamber opening/closing unit 210 may be connected to the side portion of the second chamber 120 , and the chamber opening/closing unit 210 may be disposed at each of both sides of the second chamber 120 .
  • the opening/closing drive unit 220 may use a pneumatic or hydraulic cylinder or the like.
  • a rod is provided to appear or disappear at a lower portion of the opening/closing drive unit 220 , and a lower end of the rod of the opening/closing drive unit 220 may be connected to a lower end of the chamber opening/closing unit 210 in parallel.
  • a first locking unit 211 to or from which a second locking unit 320 described below is locked or unlocked may be concavely formed on a side surface of the chamber opening/closing unit 210 , and first locking units 211 may be consecutively formed along a periphery of the chamber opening/closing unit 210 .
  • the chamber opening/closing unit 210 is raised to an open position or lowered to a closed position together with the second chamber 120 by a driving force of the opening/closing drive unit 220 .
  • an inlet portion of the first locking unit 211 may be formed to be inclined so that a width in the vertical direction gradually increases in an open direction. Accordingly, the inlet portion of the first locking unit 211 is formed wider, and thus, when a front end of the second locking unit 320 described below is inserted, interference can be prevented.
  • a first guide portion 230 for guiding movement in the vertical direction may be further provided on one side of the chamber opening/closing unit 210 .
  • the first guide portion 230 may have a length in the vertical direction, and a first rail 231 may be formed on one side of the first guide portion 230 in the vertical direction. That is, the chamber opening/closing unit 210 slides up and down in a state of being coupled to the first guide portion 230 , and thus, the chamber opening/closing unit 210 may be raised and lowered without deviation.
  • a connector may be provided on one side of the chamber opening/closing unit 210 to be slidable along the first rail 231 of the first guide portion 230 , and the connector of the chamber opening/closing unit 210 may be slidably coupled to the first rail 231 in a mating manner.
  • the locking unit 300 is for selectively locking the opening/closing unit 200 , and the locking unit 300 moves between a locking position at which the movement of the opening/closing unit 200 is locked and an unlocking position at which the locking is released.
  • the locking unit 300 locks the opening/closing unit 200 so that the etching chamber 100 in the pressurized atmosphere is closed and releases the locking of the opening/closing unit 200 when the pressurized atmosphere is released, and the locking unit 300 may include a locking drive unit 310 and the second locking unit 320 that interlocks with the first locking unit 211 to lock the movement of the opening/closing unit 200 .
  • the locking drive unit 310 may use a pneumatic or hydraulic cylinder or the like.
  • a rod may be installed on one side of the chamber opening/closing unit 210 so as to appear or disappear, and the second locking unit 320 may be connected to the front end of the rod of the locking drive unit 310 .
  • the chamber opening/closing unit 210 may be lowered to the locked position together with the second chamber 120 , and the second locking unit 320 may advance to one side by the driving force of the locking drive unit 310 and may be located to be locked to the first locking unit 211 .
  • the front end of the second locking unit 320 may be inserted into the first locking unit 211 , and the first locking unit 211 may be located to be locked in the vertical direction by the second locking unit 320 .
  • the front end of the second locking unit 320 may include a gripping groove 321 formed to be recessed so as to surround a side surface of the first locking unit 211 when the second locking unit 320 is inserted into the first locking unit 211 .
  • the gripping groove 321 may have a shape corresponding to the first locking unit 211 .
  • a second guide portion 330 for guiding the movement of the second locking unit 320 may be further provided on one side of the locking unit 300 .
  • the second guide portion 330 may have lengths in a lateral direction, and a second rail 331 may be formed along both sides on one side of the second guide portion 330 . That is, since the second locking unit 320 slides to both sides in a state of being coupled to the second guide portion 330 , the second locking unit 320 may be moved without deviation.
  • a connector may be provided on one side of the second locking unit 320 to be slidable along the second rail 331 of the second guide portion 330 , and the connector of the second locking unit 320 may be slidably couped to the second rail 331 in a mating manner.
  • first chamber 110 the opening/closing unit 200 , and the locking unit 300 may be installed on a base portion 10 .
  • the first chamber 110 may be fixed to the base portion 10 in parallel, the chamber opening/closing unit 210 may pass through the base portion 10 vertically to be coupled thereto, and the first locking unit 211 may be raised or lowered to the locking position and the unlocking position, at which the locking is released, from a lower portion of the base portion 10 .
  • the opening/closing drive unit 220 may be vertically coupled to a lower portion of the base portion 10 , a rod of the opening/closing drive unit 220 may appear or disappear at the lower portion of the base portion 10 , and the rod and the chamber opening/closing unit 210 of the opening/closing drive unit 220 may be connected to each other laterally.
  • the locking drive unit 310 may be coupled to the lower portion of the base portion 10 in parallel, the second locking unit 320 may be locked to or unlocked from the first locking unit 211 at the lower portion of the base portion 10 , and the second guide portion 330 may guide the second locking unit 320 in a state of being coupled to the lower portion of the base portion 10 in parallel.
  • the etching device may include the etching chamber 100 , the etchant supply unit 600 , the rinsing liquid supply unit 650 , the cleaning liquid supply unit 700 , and a first pressurization maintaining unit 810 .
  • the etchant supply unit 600 supplies the etchant L 1 to the etching chamber 100 at a high temperature, and the etchant supply unit 600 may stop the supply of the etchant L 1 to the etching chamber 100 when the temperature of the etchant L 1 is less than or equal to a set temperature and heat the etchant L 1 to the set temperature.
  • the etchant supply unit 600 may include a storage chamber 620 , a pumping unit 630 , and a temperature maintaining unit 640 .
  • the storage chamber 620 stores the etchant L 1
  • the pumping unit 630 is provided in a supply line 21 described below to move the etchant L 1
  • the temperature maintaining unit 640 maintains the etchant L 1 stored in the storage chamber 620 at a set temperature.
  • the temperature maintaining unit 640 may include a temperature controller 642 which measures the temperatures of a heater 641 provided in the etching chamber 100 and the etchant L 1 and controls driving of the heater 641 so that the etchant L 1 is maintained at the set temperature.
  • the heater 641 heats the etchant L 1 accommodated in the etching chamber 100 to a set temperature, and the pumping unit 630 may transmit a pumping pressure in a state of being connected to the supply line 21 .
  • the supply line 21 that connects the etchant supply unit 600 to the etching chamber 100 , a circulation line 30 that connects the supply line 21 to the etchant supply unit 600 , and a recovery line 40 through which the etchant L 1 discharged from the etching chamber 100 is supplied to the etchant supply unit 600 may be provided.
  • a supply opening/closing unit 22 for selectively opening or closing the supply line 21 a circulation opening/closing unit 31 for selectively opening or closing the circulation line 30 , and a recovery opening/closing unit 41 for selectively opening or closing the recovery line 40 may be provided.
  • the rinsing liquid supply unit 650 supplies the rinsing liquid L 2 to the etching chamber 100 and may include the rinsing liquid line 70 that connects the rinsing liquid supply unit 650 to the etching chamber 100 and a rinse opening/closing unit 71 for selectively opening or closing the rinsing liquid line 70 .
  • the cleaning liquid supply unit 700 supplies the cleaning liquid L 3 to the etching chamber 100 and may further include a cleaning liquid line 80 that connects the cleaning liquid supply unit 700 to the etching chamber 100 and a cleaning opening/closing unit 81 for selectively opening or closing the cleaning liquid line 80 .
  • the first pressurization maintaining unit 810 maintains at least one of the etching chamber 100 and the etchant supply unit 600 in a pressurized atmosphere.
  • one first pressurization maintaining unit 810 may collectively control the etching chamber 100 and the etchant supply unit 600 , or the first pressurization maintaining unit 810 may be connected to each of the etching chamber 100 and the etchant supply unit 600 to control the etching chamber 100 and the etchant supply unit 600 individually.
  • a pressurization storage unit 126 that accommodates at least one of the rinsing liquid L 2 and the cleaning liquid L 3 discharged from the etching chamber 100 , and a second pressurization maintaining unit 820 that maintains the pressurization storage unit 126 in a pressurized atmosphere may be further provided.
  • the etching device may further include a discharge line 60 through which at least one of the rinsing liquid L 2 and the etchant L 1 discharged from the etching chamber 100 is discharged to the outside and a discharge opening/closing unit 61 for selectively opening or closing the discharge line 60 .
  • any one of the rinsing liquid L 2 and the etchant L 1 discharged to the outside through an outlet of the etching chamber 100 may be discharged to the outside through the discharge line 60 after the discharge opening/closing unit 61 is opened.
  • an etching device may further include a pressurization discharge line 50 that connects the etching chamber 100 to the pressurization storage unit 126 and a pressurization opening/closing unit 51 for selectively opening or closing the pressurization discharge line 50 .
  • any one of the rinsing liquid L 2 and the cleaning liquid L 3 discharged to the outside through the outlet of the etching chamber 100 may be stored in the pressurization storage unit 126 through the pressurization discharge line 50 after the pressurization opening/closing unit 51 is opened, and any one of the rinsing liquid L 2 and the etchant L 1 stored in the pressurization storage unit 126 may be discharged to the outside in a state where the pressure of the pressurization storage unit 126 is discharged to the outside.
  • the supply opening/closing unit 22 and the recovery opening/closing unit 41 are opened and the etchant L 1 at high temperature is supplied to the inlet of the etching chamber 100 through the supply line 21 , and the etchant L 1 discharged through the outlet of the etching chamber 100 is moved to the storage chamber 620 of the etchant supply unit 600 through the recovery line 40 .
  • the circulation opening/closing unit 31 , the rinse opening/closing unit 71 , and the cleaning opening/closing unit 81 are closed, and the discharge opening/closing unit 61 or the pressurization opening/closing unit 51 is closed.
  • the circulation line 30 , the rinsing liquid line 70 , and the cleaning liquid line 80 are closed, and the discharge line 60 or the pressurization discharge line 50 is closed.
  • the etchant supply unit 600 stops the supply of the etchant L 1 to the etching chamber 100 and heats the etchant L 1 to the set temperature.
  • the etchant supply unit 600 opens the circulation opening/closing unit 31 to circulate the etchant L 1 along the circulation line 30 and closes the supply opening/closing unit 22 and the recovery opening/closing unit 41 .
  • the etchant L 1 is continuously circulated only through a partial section of the supply line 21 connecting the supply opening/closing unit 22 to the storage chamber 620 and the circulation line 30 , and the etchant L 1 is heated by the heater 641 until the etchant L 1 reaches the set temperature.
  • the supply opening/closing unit 22 and the recovery opening/closing unit 41 are opened, the etchant L 1 at high temperature is supplied to the inlet of the etching chamber 100 through the supply line 21 , and the etchant L 1 discharged to the outlet of the etching chamber 100 is moved to the storage chamber 620 of the etchant supply unit 600 through the recovery line 40 .
  • the etching process is stopped and the etchant L 1 circulates to be heated to the set temperature, and thus, the etchant L 1 may be maintained at a temperature suitable for the process.
  • the rinse opening/closing unit 71 is opened to supply the rinsing liquid L 2 at room temperature to the inlet of the etching chamber 100 through the rinsing liquid line 70 , and the discharge opening/closing unit 61 or the pressurization opening/closing unit 51 is opened.
  • the supply opening/closing unit 22 , the recovery opening/closing unit 41 , the circulation opening/closing unit 31 , and the cleaning opening/closing unit 81 are closed.
  • the supply line 21 , the recovery line 40 , the circulation line 30 , and the cleaning liquid line 80 are closed.
  • the rinsing liquid L 2 discharged to the outside through the outlet of the etching chamber 100 may be discharged to the outside through the discharge line 60 or stored in the pressurization storage unit 126 through the pressurization discharge line 50 .
  • the cleaning opening/closing unit 81 is opened to supply the cleaning liquid L 3 to the inlet of the etching chamber 100 through the cleaning liquid line 80 , and the discharge opening/closing unit 61 or the pressurization opening/closing unit 51 is opened.
  • the supply opening/closing unit 22 , the recovery opening/closing unit 41 , the circulation opening/closing unit 31 , and the cleaning opening/closing unit 81 are closed.
  • the supply line 21 , the recovery line 40 , the circulation line 30 , and the cleaning liquid line 80 are closed.
  • the cleaning liquid L 3 discharged to the outside through the outlet of the etching chamber 100 may be discharged to the outside through the discharge line 60 or stored in the pressurization storage unit 126 through the pressurization discharge line 50 .
  • the etching device may include a first nozzle 130 and a second nozzle 140 .
  • the first nozzle 130 is for spraying the etchant L 1 at high temperature or the rinsing liquid L 2 at room temperature downward onto the object W placed on the pressure chamber 101 , and one end of the first nozzle 130 is inserted into the pressure chamber 101 through the side portion of the etching chamber 100 at a first angle.
  • the first nozzle 130 may have a predetermined length in an insertion direction, one end of the first nozzle 130 in a longitudinal direction may be inserted through the etchant inlet 121 of the second chamber 120 to be located inside the pressure chamber 101 , and the opposite one end thereof may be exposed to the outside of the second chamber 120 .
  • the etchant L 1 or the rinsing liquid L 2 is supplied from the etchant supply unit 600 to the first nozzle 130 , a flow path through which the etchant L 1 or the rinsing liquid L 2 can move is formed inside the first nozzle 130 in the longitudinal direction, and a first discharge port 131 through which the etchant L 1 or the rinsing liquid L 2 is sprayed downward is formed in a lower portion of the first nozzle 130 .
  • one end of the first nozzle 130 in the longitudinal direction may be located at a center W 1 of the object W mounted on the mounting tables 401 and 402 described below, and one first discharge port 131 may be disposed or the plurality of first discharge ports 131 may be arranged in a state of being spaced apart from each other in the longitudinal direction in the lower portion of the first nozzle 130 .
  • One end of the first nozzle 130 in the longitudinal direction may be located inside the pressure chamber 101 in parallel and may be spaced apart from the upper portion of the mounting tables 401 and 402 described below, but various installation angles of the first nozzle 130 may be set as necessary.
  • the second nozzle 140 is for spraying the cleaning liquid L 3 downward onto the object W placed on the pressure chamber 101 when the object W is cleaned, and one end of the second nozzle 140 is inserted into the pressure chamber 101 through the side portion of the etching chamber 100 at a second angle.
  • the second nozzle 140 may have a predetermined length in an insertion direction, one end of the second nozzle 140 in a longitudinal direction may be inserted through the cleaning liquid inlet 122 of the second chamber 120 to be located inside the pressure chamber 101 , and the opposite one end thereof may be exposed to the outside of the second chamber 120 .
  • the cleaning liquid L 3 is supplied from the cleaning liquid supply unit 700 to the second nozzle 140 , a flow path through which the etchant L 1 or the cleaning liquid L 3 can move is formed inside the second nozzle 140 in the longitudinal direction, and a second discharge port 141 through which the cleaning liquid L 3 is sprayed downward is formed in a lower portion of the second nozzle 140 .
  • One end of the second nozzle 140 in the longitudinal direction may be located at the center W 1 of the object W mounted on the mounting tables 401 and 402 described below, and one second discharge port 141 may be disposed or the plurality of second discharge ports 141 may be arranged in a state of being spaced apart from each other in the longitudinal direction in the lower portion of the second nozzle 140 .
  • One end of the second nozzle 140 in the longitudinal direction may be located inside the pressure chamber 101 in parallel and may be spaced apart from the upper portion of the mounting tables 401 and 402 described below, but various installation angles of the second nozzle 140 may be set as necessary.
  • the first nozzle 130 may spray the etchant L 1 to the center and edge of the object W when the object W is etched and may spray the rinsing liquid L 2 to the center and edge of the object W when the object W is rinsed.
  • the second nozzle 140 may spray the cleaning liquid L 3 to the center W 1 and edge of the object W when the object W is cleaned.
  • each of the first nozzle 130 and the second nozzle 140 in the longitudinal direction extends to the center W 1 of the object W, and a distance between the first nozzle 130 and the second nozzle 140 gradually decreases in a direction toward the center W 1 of the object W.
  • one end in a supply direction of the first nozzle 130 inserted into the etchant inlet 121 and one end in a supply direction of the second nozzle 140 inserted in the cleaning liquid inlet 122 are spaced by a wide gap, and one end in the spraying direction of the first nozzle 130 located at the center W 1 of the object W and one end in the spraying direction of the second nozzle 140 located at the center W 1 of the object W are located with a relatively narrow gap.
  • the etching device may include the mounting table 401 in the accommodation portion 123 of the first chamber 110 as illustrated in FIGS. 4 and 6 .
  • the mounting table 401 may be rotatably disposed with respect to a vertical rotation center inside the accommodation portion 123 , and a support pin 411 for supporting the object W may be installed above the mounting table 401 .
  • the mounting table 401 may have a disk shape, a rotating shaft 420 forming a vertical rotation center may protrude vertically from a lower portion of the mounting table 401 , and the rotating shaft 420 may vertically pass through the first fastening portion 111 of the first chamber 110 to be coupled thereto.
  • a rotation drive unit 440 may be mechanically connected to the rotating shaft 420 , and the mounting table 401 may be rotated by a rotational force transmitted from the rotation drive unit 440 to the rotating shaft 420 .
  • a configuration may be used in which the object W is fixed (chucked) using a chuck (not illustrated) after the object W is placed on the support pin 411 .
  • a ring-shaped first sealing member (not illustrated) that surrounds the rotating shaft 420 in a rotation direction in a state of being pressed against the rotating shaft 420 may be further provided in the first fastening portion 111 , and the first sealing member may be formed of a material such as Teflon (polytetrafluoroethylene (PTFE)).
  • Teflon polytetrafluoroethylene (PTFE)
  • a first lip portion may protrude from an inner circumferential surface of the first sealing member, and first lip portions may be consecutively formed along the inner circumferential surface of the first sealing member.
  • the first lip portion may protrude obliquely upward or downward to be pressed against the rotating shaft 420 obliquely in a radial direction (rotation direction) of the rotating shaft 420 , and one or more of the first lip portions may be arranged in a vertical direction of the first sealing member.
  • the first lip portion is pressed against an outer surface of the rotating shaft 420 , and thus, airtight performance between the first fastening portion 111 and the rotating shaft 420 may be secured.
  • a bearing (not illustrated) that rotatably supports the rotating shaft 420 in the radial direction of the rotating shaft 420 may be coupled to the first fastening portion 111 , the bearing may be located above and below the first sealing member, and a washer member (not illustrated) surrounding the rotating shaft 420 in the radial direction of the rotating shaft 420 may be coupled between the bearing and the first sealing member.
  • the mounting table 402 may be provided in the accommodation portion 123 of the first chamber 110 as illustrated in FIGS. 12 to 15 .
  • the mounting table 402 may have a disk shape, and the rotating shaft 420 forming the vertical rotation center may protrude vertically from the lower portion of the mounting table 402 , and the rotating shaft 420 may vertically pass through the first fastening portion 111 of the first chamber 110 to be coupled thereto.
  • the rotation drive unit 440 may be mechanically connected to the rotating shaft 420 , and the mounting table 402 may be rotated by a rotational force transmitted from the rotation drive unit 440 to the rotating shaft 420 .
  • a ring-shaped first sealing member that surrounds the rotating shaft 420 in the rotation direction in the state of being pressed against the rotating shaft 420 may be further provided in the first fastening portion 111 , and the first sealing member may be formed of a material such as Teflon (polytetrafluoroethylene (PTFE)).
  • PTFE polytetrafluoroethylene
  • a first lip portion may protrude from the inner circumferential surface of the first sealing member, and first lip portions may be consecutively formed along the inner circumferential surface of the first sealing member.
  • the first lip portion may protrude obliquely upward or downward to be pressed against the rotating shaft 420 obliquely in the radial direction (rotation direction) of the rotating shaft 420 , and one or more of the first lip portions may be arranged in a vertical direction of the first sealing member.
  • the first lip portion is pressed against an outer surface of the rotating shaft 420 , and thus, airtight performance between the first fastening portion 111 and the rotating shaft 420 may be secured.
  • a bearing (not illustrated) that rotatably supports the rotating shaft 420 in the radial direction of the rotating shaft 420 may be coupled to the first fastening portion 111 , the bearing may be located above and below the first sealing member, and a washer member (not illustrated) surrounding the rotating shaft 420 in the radial direction of the rotating shaft 420 may be coupled between the bearing and the first sealing member.
  • the mounting table 402 may be a mounting type different from a mounting type (chucking) of the mounting table 401 described above.
  • the mounting table 402 according to one embodiment of the present invention may use an etching performance improvement unit 412 on which the object W to be etched is placed as illustrated in FIGS. 12 to 14 .
  • the etching performance improvement unit 412 is formed to be recessed so that the object W is placed in a state of being inserted and immersed in the etchant L 1 .
  • the etching performance improvement unit 412 may include a seating surface 412 a that is formed along an edge of the etching performance improvement unit 412 so that the object W is placed thereon and a protrusion 412 b that is formed along the edge of the seating surface 412 a to accommodate the etchant L 1 above the object W.
  • the seating surface 412 a may be continuously formed along an inner circumferential surface of the mounting table 402 , an upper end of the protrusion 412 b may be located higher than the seating surface 412 a , and protrusions 412 b may be consecutively formed along the edge of the seating surface 412 a.
  • a passage 430 through which air passes upward or downward may vertically pass through the mounting table 402 , and thus, the passage 430 allows the air to pass upward and downward. Therefore, when the object W is placed on the edge of the seating surface 412 a , it is possible to prevent the object W from being raised due to buoyancy.
  • a raising/lowering unit 500 for raising or lowering the object W inside the pressure chamber 101 may be further provided inside the pressure chamber 101 . When the raising/lowering unit 500 is raised, the object W is located on an upper portion of the mounting table 402 , and when the raising/lowering unit 500 is lowered, the object W is placed on the etching performance improvement unit 412 .
  • the raising/lowering unit 500 may include a body 510 that may be raised or lowered from the lower portion of the mounting table 402 and a support pin 520 that protrudes upward from the body 510 to be raised or lowered through the passage 430 and supports the lower portion of the object W.
  • the raising/lowering pin 530 may vertically protrude from a lower portion of the body 510 , the raising/lowering pin 530 may vertically pass through the second fastening portion 112 of the first chamber 110 to be coupled thereto, and a raising/lowering drive unit 540 may be mechanically connected to the raising/lowering pin 530 .
  • a ring-shaped second sealing member (not illustrated) that surrounds the raising/lowering pin 530 in a state of being pressed against the raising/lowering pin 530 in a width direction may be further provided in the second fastening portion 112 , and the second sealing member may use a material such as Teflon (polytetrafluoroethylene (PTFE)).
  • Teflon polytetrafluoroethylene (PTFE)
  • a second lip portion may protrude from an inner circumferential surface of the second sealing member, and second lip portions may be consecutively formed along the inner circumferential surface of the second sealing member.
  • the second lip portion may protrude obliquely upward or downward to be pressed against the raising/lowering pin 530 obliquely in the width direction of the raising/lowering pin 530 , and one or more of the second lip portions may be arranged in the vertical direction of the second sealing member.
  • the second lip portion is pressed against an outer surface of the raising/lowering pin 530 , and thus, airtight performance between the second fastening portion 112 and the raising/lowering pin 530 may be secured.
  • a bearing (not illustrated) that rotatably supports the raising/lowering pin 530 in the width direction of the raising/lowering pin 530 may be coupled to the second fastening portion 112 , the bearing may be located above and below the second sealing member, and a washer member (not illustrated) surrounding the raising/lowering pin 530 in the width direction of the raising/lowering pin 530 may be coupled between the bearing and the second sealing member.
  • driving of the above-described raising/lowering drive unit 540 and rotation drive unit 440 may be controlled by a controller (not illustrated), and a rotation speed of the rotation drive unit 440 or the like, and a raising/lowering timing or a speed of the raising/lowering drive unit 540 or the like may be controlled by the driving control of the controller.
  • the etching device may include a loading operation S 100 , a pressurization operation S 200 , an etching operation S 300 , a rinsing operation S 400 , a cleaning operation S 500 , a drying operation S 600 , a depressurization operation S 700 , and an unloading operation S 800 .
  • the loading operation S 100 is a process of placing the object W on the mounting tables 401 and 402 .
  • the object W is placed on the mounting tables 401 and 402 .
  • the second chamber 120 may be opened and the object W may be placed on the support pin 411 of the mounting table 401 .
  • the loading operation S 100 may include a raising operation S 110 , a supply operation S 120 , and a lowering operation S 130 .
  • the raising operation S 110 is a process of driving the raising/lowering drive unit 540 to raise the raising/lowering unit 400 to the support position of the object W.
  • the raising/lowering pin 530 is raised from the inside of the second fastening portion 112 by the raising/lowering driving force of the raising/lowering drive unit 540 , and the upper end of the support pin 520 is located at the upper portion of the mounting table 402 through the passage 430 .
  • the object supply operation S 120 is a process of inserting the object W through the open pressure chamber 101 to be seated on the upper end of the support pin 520 , and the object W placed on the upper end of the support pin 520 is spaced apart from the upper portion of the mounting table 402 .
  • the lowering operation S 130 is a process of lowering the raising/lowering unit 500 to place the object W on the mounting table 402 .
  • the object W is placed on the etching performance improvement unit 412 of the mounting table 402 in parallel.
  • the upper end of the support pin 520 is positioned below the seating surface 412 a through the passage 430 , the edge of the object W is placed on the seating surface 412 a , and the upper surface of the object W placed on the seating surface 412 a is located lower than the upper end of the protrusion 412 b.
  • the second chamber 120 is coupled to the first chamber 110 to close the pressure chamber 101 , and then the pressurizing unit 800 is driven to provide gas (N 2 or the like) in the pressure chamber 101 and pressurize the pressure chamber 101 to the set pressure.
  • the etchant supply unit 600 is driven to spray the etchant L 1 at high temperature through the first discharge port 131 of the first nozzle 130 , and the rotation drive unit 440 is driven to rotate (at 10 to 500 rpm or the like) the mounting tables 401 and 402 .
  • the etchant L 1 may be sprayed onto the object W placed on the support pins 411 of the mounting table 401 , and when the etchant L 1 is sprayed onto the object W rotated together with the mounting table 401 , the etchant L 1 may be accommodated in the accommodation portion 123 while being dropped out through the edge of the object W by a centrifugal force.
  • the etchant L 1 is sprayed onto the object W placed on the etching performance improvement unit 412 of the mounting table 402 , and the object W may be etched in a state of being immersed in the etchant L 1 accommodated inside the protrusion 412 b.
  • the etchant L 1 When the etchant L 1 is sprayed onto the object W rotating together with the mounting table 402 , the etchant L 1 may be accommodated in the accommodation portion 123 while being removed to the outside through the edge of the object W by the centrifugal force.
  • the etchant L 1 at high temperature is easily deprived of heat by the atmosphere.
  • the etchant L 1 sprayed onto the upper portion of the object W is spread to the edge by the centrifugal force, a temperature difference between the cleaning liquids L 3 at the center and the edge of the object W increases due to a heat loss, and thus, the edge of the object W may not be easily etched relative to the center thereof.
  • the etching is performed in the state where the object W is immersed in the etchant L 1 accommodated in the protrusion 412 b , and thus, a temperature deviation of the etchant L 1 may be reduced, and thus, the surface of the object W may be uniformly etched.
  • the etchant L 1 accommodated in the accommodation portion 123 may be moved to the external etchant supply unit 600 through the discharge unit 125 or to a separate storage unit (not illustrated), the etchant supply unit 600 may supply the etchant L 1 at a high temperature (175° C. or the like) through the etchant inlet 121 and circulate the etchant L 1 supplied into the pressure chamber 101 to resupply the etchant L 1 through the etchant inlet 121 .
  • the etchant L 1 supplied to the pressure chamber 101 through the etchant inlet 121 may be maintained at a set temperature by the etchant supply unit 600 , and the etchant supply unit 600 controls the temperature of the etchant L 1 to obtain a desired etching rate and selectivity.
  • the rinsing operation S 400 is a process for supplying the rinsing liquid L 2 into the etching chamber 100 to clean the object W.
  • the etchant supply unit 600 is driven to spray the rinsing liquid (phosphoric acid: H 3 PO 4 ) L 2 at room temperature through the second discharge port 141 of the second nozzle 140 . Accordingly, the object W is cooled for a period of time, and by-products and the etchant L 1 remaining on the object W are removed.
  • the rinsing liquid L 2 may be supplied through the etchant inlet 121 or a separate inlet (not illustrated), and in the rinsing operation S 400 , the pressure chamber 101 may be maintained in a pressurized atmosphere, or the internal pressure of the pressure chamber 101 may be discharged to the outside to maintain the pressure chamber 101 at the atmospheric pressure.
  • the rinsing liquid L 2 accommodated in the accommodation portion 123 may be discharged to an external storage unit (pressurized tank, drain tank, or the like, not illustrated) through the discharge unit 125 .
  • the etchant L 1 and the rinsing liquid L 2 are supplied so that a supply direction of the etchant L 1 and a supply direction of the rinsing liquid L 2 are different, and the spraying position of the etchant L 1 and the rinsing liquid L 2 are gradually closer to each other in a direction toward the center W 1 of the object W.
  • the cleaning liquid (water or the like) L 3 is supplied through the cleaning liquid inlet 122 of the second chamber 120 , and at the same time, the mounting tables 401 and 402 may be rotated by the transmission of the rotational force of the rotation drive unit 440 .
  • the cleaning liquid L 3 accommodated in the accommodation portion 123 may be discharged to the storage unit (pressurized tank, drain tank, or the like, not illustrated) through the discharge unit 125 .
  • the drying operation S 600 is a process of drying the object W.
  • a drying method in the drying operation S 600 may be applied in various ways as needed, and in the drying operation S 600 , the mounting tables 401 and 402 may be rotated by the transmission of the rotational force of the rotation drive unit 340 .
  • the pressure chamber 101 may be maintained in a pressurized atmosphere, or the internal pressure of the pressure chamber 101 may be exhausted to the outside to perform cleaning and drying under the atmospheric pressure.
  • the internal pressure of the pressure chamber 101 may be discharged by driving the exhaust unit 900 or opening the second chamber 120 .
  • the depressurization operation S 700 is a process of discharging the internal pressure of the pressure chamber 101 to the outside.
  • the pressure in the pressure chamber 101 is discharged to the outside by driving the exhaust unit 900 , and the pressure chamber 101 is converted into the atmospheric pressure by the pressure being discharged from the exhaust unit 900 .
  • the unloading operation S 800 is a process of discharging the object W to the outside.
  • the object W placed on the support pin 411 of the mounting table 401 may be discharged to the outside.
  • the raising/lowering unit 400 is raised, and thus, the object W may be discharged to the outside of the pressure chamber 101 .
  • the etching chamber 100 is locked at the closed position, and when the pressure chamber 101 of the etching chamber 100 is maintained in the pressurized atmosphere, it is possible to prevent the etching chamber 100 from being opened by a high pressure.
  • etching chamber 100 by maintaining the inside of the etching chamber 100 in the pressurized atmosphere during the etching, vaporization may be prevented, a concentration of the etchant L 1 may be kept constant, and an etching selectivity may be improved.
  • the concentration of the etchant L 1 is kept constant, additional deionized water and an additional input of the etchant are not required to maintain the concentration of the etchant L 1 . Accordingly, it is possible to improve a product yield and reduce consumption of the etchant L 1 , and in economic terms, cost may be greatly reduced. Moreover, since the etching is performed in the state where the object W is immersed in the etchant L 1 , a thick liquid film of the etchant L 1 may be formed, and thus, it is possible to improve etching performance.

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Abstract

The present invention relates to an etching device comprising: an etching chamber; an opening/closing unit for opening/closing the etching chamber; and a locking unit for selectively locking the opening/closing unit.

Description

    CROSS-REFERENCE TO RELATED APPLICATION(S)
  • This application is a national entry of International Application No. PCT/KR2020/005301, filed on Apr. 22, 2020, which claims under 35 U.S.C. § 119(a) and 365(b) priority to and benefits of Korean Patent Application No. 10-2019-0047050, filed on Apr. 23, 2019 in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference.
    • TECHNICAL FIELD
  • The present invention relates to an etching device with improved etching performance.
    • BACKGROUND ART
  • A silicon nitride film is used as a representative insulating film in a semiconductor manufacturing process and has a structure in which the silicon nitride film is in contact with a silicon oxide film, a polysilicon film, a silicon object surface, or the like. Moreover, the silicon nitride film is deposited by a chemical vapor deposition (CVD) process and removed by a dry etching device and a wet etching device.
  • A dry etching device performs dry etching in a vacuum state mainly with a fluorine-based gas and an inert gas. However, the dry etching has a limit to commercial use because a device for performing the dry etching is expensive. Therefore, wet etching using phosphoric acid is widely used rather than the dry etching.
  • In the wet etching of the wet etching device, a desired target layer is selectively etched from an object (substrate, or the like) by a chemical reaction of an etchant, and depending on required characteristics, an etching degree, or the like, an etchant having a composition ratio corresponding thereto may be easily mixed to perform the etching. Therefore, compared to the dry etching, it is possible to provide improved work compatibility and process many objects at once, and thus, the device is inexpensive.
  • The wet etching device includes an etching chamber which is openable or closable and in which an object is located, an etchant supply unit for supplying an etchant to the etching chamber, a cleaning liquid supply unit for supplying a cleaning liquid to the etching chamber, and a drive unit for opening or closing the etching chamber.
  • However, in the conventional wet etching device, when an inside of the etching chamber is maintained in a pressurized atmosphere during an etching process, a high pressure acts on the etching chamber, and thus a robust closed structure is required so that a closed state of the etching chamber is not changed.
  • In addition, in the conventional wet etching device, a portion of the etchant is vaporized during the etching, and thus, a temperature of the object may be lowered by heat of vaporization, it is difficult to control a concentration of the etchant due to the vaporization of the etchant, and a loss occurs. Accordingly, in order to keep the concentration of the etchant constant, currently, a large amount of deionized water and etchant are added to an etching tank to etch the object, and an economic loss is large due to the addition of the large amount of deionized water and etchant.
  • As a prior document related to the present invention, there is Korean Patent No. 10-0691479 (Feb. 28, 2007), and the prior document discloses an etching device for a large-area substrate.
    • DISCLOSURE Technical Problem
  • The present invention is directed to providing an etching device with improved etching performance.
    • Technical Solution
  • One aspect of the present invention provides an etching device including an etching chamber, an opening/closing unit configured to open or close the etching chamber, and a locking unit configured to selectively lock the opening/closing unit.
  • The locking unit may be moved between a locking position at which movement of the opening/closing unit is locked and an unlocking position at which the locking is released.
  • The opening/closing unit may include a chamber opening/closing unit configured to selectively open or close the etching chamber, and an opening/closing drive unit configured to drive the chamber opening/closing unit.
  • The etching device may further include a first guide portion configured to guide movement of the chamber opening/closing unit.
  • The etching device may further include a pressurization maintaining unit configured to maintain the etching chamber in a pressurized atmosphere.
  • The pressurization maintaining unit may include a pressurizing unit configured to maintain the etching chamber at a set pressure and an exhaust unit configured to discharge a gas inside the etching chamber to the outside.
  • The locking unit may lock the opening/closing unit so that the etching chamber in the pressurized atmosphere is closed and release the locking of the opening/closing unit when the pressurized atmosphere is released.
  • The etching device may further include a first locking unit provided in the opening/closing unit; and a second locking unit provided in the locking unit and interlocked with the first locking unit to lock movement of the opening/closing unit.
  • The etching device may further include a second guide portion configured to guide movement of the second locking unit.
  • The pressurization maintaining unit may maintain a pressure of 0.1 bar to 10 bar in the etching chamber.
  • The etching device may further include an etchant supply unit configured to supply an etchant to the etching chamber.
  • The etchant selectively may use at least one or a mixture of one or more of HF, NHO3, H2O2, IPA, NH4OH, H2O, H3PO4, and H2SO4.
    • Advantageous Effects
  • In an etching device according to one embodiment of the present invention, an etching chamber is locked at a closed position, and when the etching chamber is maintained in a pressurized atmosphere, it is possible to prevent the etching chamber from being opened by a high pressure.
  • In addition, by maintaining an inside of the etching chamber in the pressurized atmosphere during etching, vaporization can be prevented, a concentration of an etchant can be kept constant, and an etching selectivity can be improved.
  • In addition, since the concentration of the etchant is kept constant, additional deionized water and an additional input of the etchant are not required to maintain the concentration of the etchant. Accordingly, it is possible to improve a product yield and reduce consumption of the etchant, and in economic terms, cost can be greatly reduced.
  • In addition, since the etching is performed in a state where an object is immersed in the etchant, a thick liquid film of the etchant can be formed, and thus, it is possible to improve etching performance.
    • DESCRIPTION OF DRAWINGS
  • FIG. 1 is a perspective view illustrating an etching device according to one embodiment of the present invention.
  • FIG. 2 is a front view illustrating a state where a second chamber of the etching device is open according to one embodiment of the present invention.
  • FIG. 3 is a front view illustrating a state where the second chamber of the etching device is closed according to one embodiment of the present invention.
  • FIG. 4 is a side view illustrating the state where the second chamber of the etching device is open according to one embodiment of the present invention.
  • FIG. 5 is a side view illustrating the state where the second chamber of the etching device is closed according to one embodiment of the present invention.
  • FIG. 6 is a front cross-sectional view illustrating a state where the second chamber of the etching device is closed according to one embodiment of the present invention.
  • FIG. 7 is a perspective view illustrating the second chamber, a first nozzle, and a second nozzle of the etching device according to one embodiment of the present invention.
  • FIG. 8 is a bottom view illustrating the second chamber, the first nozzle, and the second nozzle of the etching device according to one embodiment of the present invention.
  • FIG. 9 is a perspective view illustrating the first nozzle and the second nozzle of the etching device according to one embodiment of the present invention.
  • FIG. 10 is a configuration diagram illustrating a connection structure between an etchant supply unit, a rinsing liquid supply unit, and a cleaning liquid supply unit of the etching device according to one embodiment of the present invention.
  • FIG. 11 is a configuration diagram illustrating a connection structure between the etchant supply unit, the rinsing liquid supply unit, the cleaning liquid supply unit, and a pressurization storage unit of the etching device according to one embodiment of the present invention.
  • FIG. 12 is a front cross-sectional view illustrating an etching device according to another embodiment of the present invention.
  • FIG. 13 is a front cross-sectional view illustrating a process in which a second chamber of an etching device is opened and an object is supplied according to another embodiment of the present invention.
  • FIG. 14 is a perspective view illustrating a mounting table of the etching device according to another embodiment of the present invention.
  • FIG. 15 is a perspective view illustrating a raising/lowering unit of the etching device according to another embodiment of the present invention.
  • FIG. 16 is a block diagram illustrating an operation of an etching device according to one embodiment of the present invention.
  • FIG. 17 is a block diagram illustrating an etching process in an etching device according to one embodiment of the present invention.
    •  MODES OF THE INVENTION
  • Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
  • Advantages and features of the present invention and a method of achieving these will become apparent with reference to the embodiments described below in detail together with the accompanying drawings.
  • However, the present invention is not limited to the embodiments disclosed below but will be implemented in a variety of different forms, only the present embodiments are provided to complete the disclosure of the present invention and to fully inform the scope of the invention to those skilled in the art to which the present invention pertains, and the present invention will be defined by the scope of the claims.
  • In addition, when it is determined that related well-known technologies or the like may obscure subject matters of the present invention in describing the present invention, detailed descriptions thereof will be omitted.
  • FIG. 1 is a perspective view illustrating an etching device according to one embodiment of the present invention, FIG. 2 is a front view illustrating a state where a second chamber of the etching device is open according to one embodiment of the present invention, FIG. 3 is a front view illustrating a state where the second chamber of the etching device is closed according to one embodiment of the present invention, FIG. 4 is a side view illustrating the state where the second chamber of the etching device is open according to one embodiment of the present invention, FIG. 5 is a side view illustrating the state where the second chamber of the etching device is closed according to one embodiment of the present invention, and FIG. 6 is a front cross-sectional view illustrating a state where the second chamber of the etching device is closed according to one embodiment of the present invention.
  • FIG. 7 is a perspective view illustrating the second chamber, a first nozzle, and a second nozzle of the etching device according to one embodiment of the present invention, FIG. 8 is a bottom view illustrating the second chamber, the first nozzle, and the second nozzle of the etching device according to one embodiment of the present invention, and FIG. 9 is a perspective view illustrating the first nozzle and the second nozzle of the etching device according to one embodiment of the present invention.
  • FIG. 10 is a configuration diagram illustrating a connection structure between an etchant supply unit, a rinsing liquid supply unit, and a cleaning liquid supply unit of the etching device according to one embodiment of the present invention, FIG. 11 is a configuration diagram illustrating a connection structure between the etchant supply unit, the rinsing liquid supply unit, the cleaning liquid supply unit, and a pressurization storage unit of the etching device according to one embodiment of the present invention, and FIG. 12 is a front cross-sectional view illustrating an etching device according to another embodiment of the present invention.
  • FIG. 13 is a front cross-sectional view illustrating a process in which a second chamber of an etching device is opened and an object is supplied according to another embodiment of the present invention, FIG. 14 is a perspective view illustrating a mounting table of the etching device according to another embodiment of the present invention, and FIG. 15 is a perspective view illustrating a raising/lowering unit of the etching device according to another embodiment of the present invention.
  • Referring to FIGS. 1 to 15, the etching device according to one embodiment of the present invention includes an etching chamber 100, an opening/closing unit 200, and a locking unit 300.
  • The etching chamber 100 is provided to be openable or closable, an etchant (phosphoric acid: H3PO4 or the like) L1 at high temperature, a rinsing liquid (phosphoric acid: H3PO4 or the like) L2 at room temperature, and a cleaning liquid (water or the like) L3 may be selectively supplied to a pressure chamber 101 inside the etching chamber 100, and a pressurized atmosphere of the pressure chamber 101 may be maintained by a pressurizing unit 800 described below.
  • In the etching device according to one embodiment of the present invention, the etchant L1 and the rinsing liquid L2 are not limited, and various types may be used. The etchant L1 and rinsing liquid L according to one embodiment of the present invention may selectively use at least one or a mixture of one or more of HF, NHO3, H2O2, IPA, NH4OH, H2O, H3PO4, and H2SO4.
  • The etching chamber 100 may include a first chamber 110 and a second chamber 120 provided to be openable or closable above the first chamber 110. The pressure chamber 101 having a certain width is formed between the first chamber 110 and the second chamber 120, and a first fastening portion 111 to which a rotating shaft 420 described below is coupled and a second fastening portion 112 to which a raising/lowering pin 530 described below is coupled may vertically pass through a lower portion of the first chamber 110.
  • Moreover, an accommodation portion 123 may be formed to be recessed downward in an upper portion of the first chamber 110, mounting tables 401 and 402 for placing an object W may be located at an upper portion of the accommodation portion 123, and an inclined portion 124 formed to be inclined downward along an edge of the accommodation portion 123 may be formed on a bottom surface of the accommodation portion 123.
  • The inclined portion 124 may have an angle at which the etchant L1, the rinsing liquid L2, and the cleaning liquid L3 dropped from above may be moved to the edge, a discharge unit 125 for discharging the etchant L1, the rinsing liquid L2, and the cleaning liquid L3 accommodated in the accommodation portion 123 to the outside may be formed in the lower portion of the first chamber 110, and the discharge unit 125 may be connected to an external storage unit (not illustrated).
  • The second chamber 120 is coupled to and separated from the upper portion of the first chamber 110 to open and close the pressure chamber 101, and when the second chamber 120 is coupled to the first chamber 110, an etchant inlet 121 is formed so that the etchant L1 is supplied into the pressure chamber 101. The etchant inlet 121 horizontally passes through a side portion of the second chamber 120 to connect the pressure chamber 101 to the outside, and the etchant supply unit 600 may be connected to the etchant inlet 121 by the connector 610.
  • The etchant supply unit 600 may supply the etchant L1 at a high temperature through the etchant inlet 121, and the second chamber 120 may be raised or lowered to an upper open position and a lower closed position by the opening/closing unit 200.
  • The etchant supply unit 600 according to one embodiment of the present invention may circulate the etchant L1 supplied into the pressure chamber 101 to the outside and then resupply the etchant L1 through the etchant inlet 121. The etchant supply unit 600 may include a storage chamber, a heater, a valve, a pump, or the like, and the etchant supply unit 600 may further include a temperature controller for controlling a temperature of the etchant L1.
  • The etchant supply unit 600 may supply the etchant L1 and the rinsing liquid L2 but may constitute a separate rinsing liquid supply unit 650. In this case, the rinsing liquid supply unit 650 may inject the rinsing liquid L2 into the pressure chamber 101 through the etchant inlet 121 or a separate rinsing liquid inlet.
  • The storage chamber may store the etchant L1 at a predetermined pressure and may be connected to the etchant inlet 121 by the connector 610, and the heater may be installed in the storage chamber to heat the etchant L1 to a set temperature. The valve may be installed in the connector 610 to change an open/close state, and the pump may transmit a pumping pressure in a state of being connected to the connector 610.
  • In addition, the second chamber 120 may be provided with a cleaning liquid inlet 122 so that the cleaning liquid (SC1, DHF, IPA, DIW, or the like) L3 is supplied from the outside. The cleaning liquid supply unit 700 may be further connected to the cleaning liquid inlet 122 by a connector 710. The cleaning liquid inlet 122 may horizontally pass through a side portion of the second chamber 120 to connect the pressure chamber 101 to the outside.
  • The etching chamber 100 according to one embodiment of the present invention may include the pressurizing unit 800 for pressurizing the inside of the pressure chamber 101 and an exhaust unit 900 for discharging an internal pressure of the pressure chamber 101 to the outside.
  • The pressurizing unit 800 supplies a compressed gas (N2 or the like) to the pressure chamber 101 in a state in which the first chamber 110 and the second chamber 120 are closed to maintain the pressure of the pressure chamber 101 at a set pressure. The pressurizing unit 800 may supply a compressed gas into the pressure chamber 101, and a detector (not illustrated) for measuring the internal pressure of the pressure chamber 101 may be electrically connected to the pressurizing unit 800.
  • The exhaust unit 900 may discharge the gas in the pressure chamber 101 to the outside to generate a pressure difference between the etchant supply unit 600 and the storage chamber or maintain the pressure chamber 101 at an atmospheric pressure before the second chamber 120 is opened.
  • The opening/closing unit 200 is for opening or closing the etching chamber 100, and the opening/closing unit 200 includes a chamber opening/closing unit 210 for selectively opening the etching chamber 100 and an opening/closing drive unit 220 for driving the chamber opening/closing unit 210.
  • The chamber opening/closing unit 210 is provided to be raised or lowered, an upper end of the chamber opening/closing unit 210 is connected to the second chamber 120, and the opening/closing drive unit 220 is connected to the chamber opening/closing unit 210 to transmit a raising/lowering driving force.
  • Here, the chamber opening/closing unit 210 may have a vertical length, the upper end of the chamber opening/closing unit 210 may be connected to the side portion of the second chamber 120, and the chamber opening/closing unit 210 may be disposed at each of both sides of the second chamber 120.
  • The opening/closing drive unit 220 may use a pneumatic or hydraulic cylinder or the like. In this case, a rod is provided to appear or disappear at a lower portion of the opening/closing drive unit 220, and a lower end of the rod of the opening/closing drive unit 220 may be connected to a lower end of the chamber opening/closing unit 210 in parallel.
  • In addition, a first locking unit 211 to or from which a second locking unit 320 described below is locked or unlocked may be concavely formed on a side surface of the chamber opening/closing unit 210, and first locking units 211 may be consecutively formed along a periphery of the chamber opening/closing unit 210. The chamber opening/closing unit 210 is raised to an open position or lowered to a closed position together with the second chamber 120 by a driving force of the opening/closing drive unit 220.
  • In addition, an inlet portion of the first locking unit 211 may be formed to be inclined so that a width in the vertical direction gradually increases in an open direction. Accordingly, the inlet portion of the first locking unit 211 is formed wider, and thus, when a front end of the second locking unit 320 described below is inserted, interference can be prevented.
  • Moreover, a first guide portion 230 for guiding movement in the vertical direction may be further provided on one side of the chamber opening/closing unit 210. The first guide portion 230 may have a length in the vertical direction, and a first rail 231 may be formed on one side of the first guide portion 230 in the vertical direction. That is, the chamber opening/closing unit 210 slides up and down in a state of being coupled to the first guide portion 230, and thus, the chamber opening/closing unit 210 may be raised and lowered without deviation.
  • In addition, a connector may be provided on one side of the chamber opening/closing unit 210 to be slidable along the first rail 231 of the first guide portion 230, and the connector of the chamber opening/closing unit 210 may be slidably coupled to the first rail 231 in a mating manner.
  • The locking unit 300 is for selectively locking the opening/closing unit 200, and the locking unit 300 moves between a locking position at which the movement of the opening/closing unit 200 is locked and an unlocking position at which the locking is released.
  • The locking unit 300 locks the opening/closing unit 200 so that the etching chamber 100 in the pressurized atmosphere is closed and releases the locking of the opening/closing unit 200 when the pressurized atmosphere is released, and the locking unit 300 may include a locking drive unit 310 and the second locking unit 320 that interlocks with the first locking unit 211 to lock the movement of the opening/closing unit 200.
  • The locking drive unit 310 may use a pneumatic or hydraulic cylinder or the like. In this case, a rod may be installed on one side of the chamber opening/closing unit 210 so as to appear or disappear, and the second locking unit 320 may be connected to the front end of the rod of the locking drive unit 310.
  • Referring to FIG. 5, the chamber opening/closing unit 210 may be lowered to the locked position together with the second chamber 120, and the second locking unit 320 may advance to one side by the driving force of the locking drive unit 310 and may be located to be locked to the first locking unit 211. In this case, the front end of the second locking unit 320 may be inserted into the first locking unit 211, and the first locking unit 211 may be located to be locked in the vertical direction by the second locking unit 320.
  • The front end of the second locking unit 320 may include a gripping groove 321 formed to be recessed so as to surround a side surface of the first locking unit 211 when the second locking unit 320 is inserted into the first locking unit 211. The gripping groove 321 may have a shape corresponding to the first locking unit 211.
  • In addition, a second guide portion 330 for guiding the movement of the second locking unit 320 may be further provided on one side of the locking unit 300. The second guide portion 330 may have lengths in a lateral direction, and a second rail 331 may be formed along both sides on one side of the second guide portion 330. That is, since the second locking unit 320 slides to both sides in a state of being coupled to the second guide portion 330, the second locking unit 320 may be moved without deviation.
  • In addition, a connector may be provided on one side of the second locking unit 320 to be slidable along the second rail 331 of the second guide portion 330, and the connector of the second locking unit 320 may be slidably couped to the second rail 331 in a mating manner.
  • In addition, the first chamber 110, the opening/closing unit 200, and the locking unit 300 may be installed on a base portion 10. The first chamber 110 may be fixed to the base portion 10 in parallel, the chamber opening/closing unit 210 may pass through the base portion 10 vertically to be coupled thereto, and the first locking unit 211 may be raised or lowered to the locking position and the unlocking position, at which the locking is released, from a lower portion of the base portion 10.
  • In addition, the opening/closing drive unit 220 may be vertically coupled to a lower portion of the base portion 10, a rod of the opening/closing drive unit 220 may appear or disappear at the lower portion of the base portion 10, and the rod and the chamber opening/closing unit 210 of the opening/closing drive unit 220 may be connected to each other laterally.
  • In addition, the locking drive unit 310 may be coupled to the lower portion of the base portion 10 in parallel, the second locking unit 320 may be locked to or unlocked from the first locking unit 211 at the lower portion of the base portion 10, and the second guide portion 330 may guide the second locking unit 320 in a state of being coupled to the lower portion of the base portion 10 in parallel.
  • Meanwhile, as illustrated in FIGS. 10 and 11, the etching device according to one embodiment of the present invention may include the etching chamber 100, the etchant supply unit 600, the rinsing liquid supply unit 650, the cleaning liquid supply unit 700, and a first pressurization maintaining unit 810.
  • The etchant supply unit 600 supplies the etchant L1 to the etching chamber 100 at a high temperature, and the etchant supply unit 600 may stop the supply of the etchant L1 to the etching chamber 100 when the temperature of the etchant L1 is less than or equal to a set temperature and heat the etchant L1 to the set temperature.
  • Here, the etchant supply unit 600 may include a storage chamber 620, a pumping unit 630, and a temperature maintaining unit 640. The storage chamber 620 stores the etchant L1, the pumping unit 630 is provided in a supply line 21 described below to move the etchant L1, and the temperature maintaining unit 640 maintains the etchant L1 stored in the storage chamber 620 at a set temperature.
  • The temperature maintaining unit 640 may include a temperature controller 642 which measures the temperatures of a heater 641 provided in the etching chamber 100 and the etchant L1 and controls driving of the heater 641 so that the etchant L1 is maintained at the set temperature. The heater 641 heats the etchant L1 accommodated in the etching chamber 100 to a set temperature, and the pumping unit 630 may transmit a pumping pressure in a state of being connected to the supply line 21.
  • In addition, the supply line 21 that connects the etchant supply unit 600 to the etching chamber 100, a circulation line 30 that connects the supply line 21 to the etchant supply unit 600, and a recovery line 40 through which the etchant L1 discharged from the etching chamber 100 is supplied to the etchant supply unit 600 may be provided.
  • In addition, a supply opening/closing unit 22 for selectively opening or closing the supply line 21, a circulation opening/closing unit 31 for selectively opening or closing the circulation line 30, and a recovery opening/closing unit 41 for selectively opening or closing the recovery line 40 may be provided.
  • The rinsing liquid supply unit 650 supplies the rinsing liquid L2 to the etching chamber 100 and may include the rinsing liquid line 70 that connects the rinsing liquid supply unit 650 to the etching chamber 100 and a rinse opening/closing unit 71 for selectively opening or closing the rinsing liquid line 70.
  • The cleaning liquid supply unit 700 supplies the cleaning liquid L3 to the etching chamber 100 and may further include a cleaning liquid line 80 that connects the cleaning liquid supply unit 700 to the etching chamber 100 and a cleaning opening/closing unit 81 for selectively opening or closing the cleaning liquid line 80.
  • The first pressurization maintaining unit 810 maintains at least one of the etching chamber 100 and the etchant supply unit 600 in a pressurized atmosphere. In this case, one first pressurization maintaining unit 810 may collectively control the etching chamber 100 and the etchant supply unit 600, or the first pressurization maintaining unit 810 may be connected to each of the etching chamber 100 and the etchant supply unit 600 to control the etching chamber 100 and the etchant supply unit 600 individually.
  • Moreover, a pressurization storage unit 126 that accommodates at least one of the rinsing liquid L2 and the cleaning liquid L3 discharged from the etching chamber 100, and a second pressurization maintaining unit 820 that maintains the pressurization storage unit 126 in a pressurized atmosphere may be further provided.
  • Meanwhile, as illustrated in FIG. 10, the etching device according to one embodiment of the present invention may further include a discharge line 60 through which at least one of the rinsing liquid L2 and the etchant L1 discharged from the etching chamber 100 is discharged to the outside and a discharge opening/closing unit 61 for selectively opening or closing the discharge line 60.
  • That is, any one of the rinsing liquid L2 and the etchant L1 discharged to the outside through an outlet of the etching chamber 100 may be discharged to the outside through the discharge line 60 after the discharge opening/closing unit 61 is opened.
  • Meanwhile, as illustrated in FIG. 11, an etching device according to another embodiment of the present invention may further include a pressurization discharge line 50 that connects the etching chamber 100 to the pressurization storage unit 126 and a pressurization opening/closing unit 51 for selectively opening or closing the pressurization discharge line 50.
  • That is, any one of the rinsing liquid L2 and the cleaning liquid L3 discharged to the outside through the outlet of the etching chamber 100 may be stored in the pressurization storage unit 126 through the pressurization discharge line 50 after the pressurization opening/closing unit 51 is opened, and any one of the rinsing liquid L2 and the etchant L1 stored in the pressurization storage unit 126 may be discharged to the outside in a state where the pressure of the pressurization storage unit 126 is discharged to the outside.
  • Next, a process in which the etchant supply unit 600 supplies the etchant L1 will be described. The supply opening/closing unit 22 and the recovery opening/closing unit 41 are opened and the etchant L1 at high temperature is supplied to the inlet of the etching chamber 100 through the supply line 21, and the etchant L1 discharged through the outlet of the etching chamber 100 is moved to the storage chamber 620 of the etchant supply unit 600 through the recovery line 40.
  • At the same time, the circulation opening/closing unit 31, the rinse opening/closing unit 71, and the cleaning opening/closing unit 81 are closed, and the discharge opening/closing unit 61 or the pressurization opening/closing unit 51 is closed. In this case, the circulation line 30, the rinsing liquid line 70, and the cleaning liquid line 80 are closed, and the discharge line 60 or the pressurization discharge line 50 is closed.
  • In this process, when the temperature of the etchant L1 is less than or equal to the set temperature, the etchant supply unit 600 stops the supply of the etchant L1 to the etching chamber 100 and heats the etchant L1 to the set temperature.
  • When the temperature of the etchant L1 is less than or equal to the set temperature, the etchant supply unit 600 opens the circulation opening/closing unit 31 to circulate the etchant L1 along the circulation line 30 and closes the supply opening/closing unit 22 and the recovery opening/closing unit 41.
  • In this state, the etchant L1 is continuously circulated only through a partial section of the supply line 21 connecting the supply opening/closing unit 22 to the storage chamber 620 and the circulation line 30, and the etchant L1 is heated by the heater 641 until the etchant L1 reaches the set temperature.
  • Thereafter, when the temperature of the etchant L1 reaches the set temperature, the supply opening/closing unit 22 and the recovery opening/closing unit 41 are opened, the etchant L1 at high temperature is supplied to the inlet of the etching chamber 100 through the supply line 21, and the etchant L1 discharged to the outlet of the etching chamber 100 is moved to the storage chamber 620 of the etchant supply unit 600 through the recovery line 40.
  • That is, when the temperature of the etchant L1 is less than or equal to the set temperature in the process of supplying the etchant L1 by the etchant supply unit 600, the etching process is stopped and the etchant L1 circulates to be heated to the set temperature, and thus, the etchant L1 may be maintained at a temperature suitable for the process.
  • A process in which the rinsing liquid supply unit 650 supplies the rinsing liquid L2 will be described. The rinse opening/closing unit 71 is opened to supply the rinsing liquid L2 at room temperature to the inlet of the etching chamber 100 through the rinsing liquid line 70, and the discharge opening/closing unit 61 or the pressurization opening/closing unit 51 is opened.
  • At the same time, the supply opening/closing unit 22, the recovery opening/closing unit 41, the circulation opening/closing unit 31, and the cleaning opening/closing unit 81 are closed. In this case, the supply line 21, the recovery line 40, the circulation line 30, and the cleaning liquid line 80 are closed.
  • In this process, the rinsing liquid L2 discharged to the outside through the outlet of the etching chamber 100 may be discharged to the outside through the discharge line 60 or stored in the pressurization storage unit 126 through the pressurization discharge line 50.
  • A process in which the cleaning liquid supply unit 700 supplies the cleaning liquid L3 will be described. The cleaning opening/closing unit 81 is opened to supply the cleaning liquid L3 to the inlet of the etching chamber 100 through the cleaning liquid line 80, and the discharge opening/closing unit 61 or the pressurization opening/closing unit 51 is opened.
  • At the same time, the supply opening/closing unit 22, the recovery opening/closing unit 41, the circulation opening/closing unit 31, and the cleaning opening/closing unit 81 are closed. In this case, the supply line 21, the recovery line 40, the circulation line 30, and the cleaning liquid line 80 are closed.
  • In this process, the cleaning liquid L3 discharged to the outside through the outlet of the etching chamber 100 may be discharged to the outside through the discharge line 60 or stored in the pressurization storage unit 126 through the pressurization discharge line 50. Meanwhile, the etching device according to another embodiment of the present invention may include a first nozzle 130 and a second nozzle 140. The first nozzle 130 is for spraying the etchant L1 at high temperature or the rinsing liquid L2 at room temperature downward onto the object W placed on the pressure chamber 101, and one end of the first nozzle 130 is inserted into the pressure chamber 101 through the side portion of the etching chamber 100 at a first angle.
  • Here, the first nozzle 130 may have a predetermined length in an insertion direction, one end of the first nozzle 130 in a longitudinal direction may be inserted through the etchant inlet 121 of the second chamber 120 to be located inside the pressure chamber 101, and the opposite one end thereof may be exposed to the outside of the second chamber 120.
  • When the object W is etched or rinsed, the etchant L1 or the rinsing liquid L2 is supplied from the etchant supply unit 600 to the first nozzle 130, a flow path through which the etchant L1 or the rinsing liquid L2 can move is formed inside the first nozzle 130 in the longitudinal direction, and a first discharge port 131 through which the etchant L1 or the rinsing liquid L2 is sprayed downward is formed in a lower portion of the first nozzle 130. In this case, one end of the first nozzle 130 in the longitudinal direction may be located at a center W1 of the object W mounted on the mounting tables 401 and 402 described below, and one first discharge port 131 may be disposed or the plurality of first discharge ports 131 may be arranged in a state of being spaced apart from each other in the longitudinal direction in the lower portion of the first nozzle 130. One end of the first nozzle 130 in the longitudinal direction may be located inside the pressure chamber 101 in parallel and may be spaced apart from the upper portion of the mounting tables 401 and 402 described below, but various installation angles of the first nozzle 130 may be set as necessary.
  • The second nozzle 140 is for spraying the cleaning liquid L3 downward onto the object W placed on the pressure chamber 101 when the object W is cleaned, and one end of the second nozzle 140 is inserted into the pressure chamber 101 through the side portion of the etching chamber 100 at a second angle. The second nozzle 140 may have a predetermined length in an insertion direction, one end of the second nozzle 140 in a longitudinal direction may be inserted through the cleaning liquid inlet 122 of the second chamber 120 to be located inside the pressure chamber 101, and the opposite one end thereof may be exposed to the outside of the second chamber 120.
  • Moreover, when the object W is cleaned, the cleaning liquid L3 is supplied from the cleaning liquid supply unit 700 to the second nozzle 140, a flow path through which the etchant L1 or the cleaning liquid L3 can move is formed inside the second nozzle 140 in the longitudinal direction, and a second discharge port 141 through which the cleaning liquid L3 is sprayed downward is formed in a lower portion of the second nozzle 140.
  • One end of the second nozzle 140 in the longitudinal direction may be located at the center W1 of the object W mounted on the mounting tables 401 and 402 described below, and one second discharge port 141 may be disposed or the plurality of second discharge ports 141 may be arranged in a state of being spaced apart from each other in the longitudinal direction in the lower portion of the second nozzle 140. One end of the second nozzle 140 in the longitudinal direction may be located inside the pressure chamber 101 in parallel and may be spaced apart from the upper portion of the mounting tables 401 and 402 described below, but various installation angles of the second nozzle 140 may be set as necessary.
  • Accordingly, the first nozzle 130 may spray the etchant L1 to the center and edge of the object W when the object W is etched and may spray the rinsing liquid L2 to the center and edge of the object W when the object W is rinsed. The second nozzle 140 may spray the cleaning liquid L3 to the center W1 and edge of the object W when the object W is cleaned.
  • One end of each of the first nozzle 130 and the second nozzle 140 in the longitudinal direction extends to the center W1 of the object W, and a distance between the first nozzle 130 and the second nozzle 140 gradually decreases in a direction toward the center W1 of the object W. In this case, one end in a supply direction of the first nozzle 130 inserted into the etchant inlet 121 and one end in a supply direction of the second nozzle 140 inserted in the cleaning liquid inlet 122 are spaced by a wide gap, and one end in the spraying direction of the first nozzle 130 located at the center W1 of the object W and one end in the spraying direction of the second nozzle 140 located at the center W1 of the object W are located with a relatively narrow gap.
  • The etching device according to one embodiment of the present invention may include the mounting table 401 in the accommodation portion 123 of the first chamber 110 as illustrated in FIGS. 4 and 6. The mounting table 401 may be rotatably disposed with respect to a vertical rotation center inside the accommodation portion 123, and a support pin 411 for supporting the object W may be installed above the mounting table 401.
  • In addition, the mounting table 401 may have a disk shape, a rotating shaft 420 forming a vertical rotation center may protrude vertically from a lower portion of the mounting table 401, and the rotating shaft 420 may vertically pass through the first fastening portion 111 of the first chamber 110 to be coupled thereto.
  • In addition, a rotation drive unit 440 may be mechanically connected to the rotating shaft 420, and the mounting table 401 may be rotated by a rotational force transmitted from the rotation drive unit 440 to the rotating shaft 420.
  • In the mounting table 401 according to one embodiment of the present invention, a configuration may be used in which the object W is fixed (chucked) using a chuck (not illustrated) after the object W is placed on the support pin 411.
  • Meanwhile, a ring-shaped first sealing member (not illustrated) that surrounds the rotating shaft 420 in a rotation direction in a state of being pressed against the rotating shaft 420 may be further provided in the first fastening portion 111, and the first sealing member may be formed of a material such as Teflon (polytetrafluoroethylene (PTFE)).
  • A first lip portion (not illustrated) may protrude from an inner circumferential surface of the first sealing member, and first lip portions may be consecutively formed along the inner circumferential surface of the first sealing member. The first lip portion may protrude obliquely upward or downward to be pressed against the rotating shaft 420 obliquely in a radial direction (rotation direction) of the rotating shaft 420, and one or more of the first lip portions may be arranged in a vertical direction of the first sealing member.
  • In the first sealing member, the first lip portion is pressed against an outer surface of the rotating shaft 420, and thus, airtight performance between the first fastening portion 111 and the rotating shaft 420 may be secured.
  • In addition, a bearing (not illustrated) that rotatably supports the rotating shaft 420 in the radial direction of the rotating shaft 420 may be coupled to the first fastening portion 111, the bearing may be located above and below the first sealing member, and a washer member (not illustrated) surrounding the rotating shaft 420 in the radial direction of the rotating shaft 420 may be coupled between the bearing and the first sealing member.
  • In the etching device according to one embodiment of the present invention, the mounting table 402 may be provided in the accommodation portion 123 of the first chamber 110 as illustrated in FIGS. 12 to 15. The mounting table 402 may have a disk shape, and the rotating shaft 420 forming the vertical rotation center may protrude vertically from the lower portion of the mounting table 402, and the rotating shaft 420 may vertically pass through the first fastening portion 111 of the first chamber 110 to be coupled thereto. The rotation drive unit 440 may be mechanically connected to the rotating shaft 420, and the mounting table 402 may be rotated by a rotational force transmitted from the rotation drive unit 440 to the rotating shaft 420.
  • Meanwhile, a ring-shaped first sealing member (not illustrated) that surrounds the rotating shaft 420 in the rotation direction in the state of being pressed against the rotating shaft 420 may be further provided in the first fastening portion 111, and the first sealing member may be formed of a material such as Teflon (polytetrafluoroethylene (PTFE)). A first lip portion (not illustrated) may protrude from the inner circumferential surface of the first sealing member, and first lip portions may be consecutively formed along the inner circumferential surface of the first sealing member.
  • The first lip portion may protrude obliquely upward or downward to be pressed against the rotating shaft 420 obliquely in the radial direction (rotation direction) of the rotating shaft 420, and one or more of the first lip portions may be arranged in a vertical direction of the first sealing member. In the first sealing member, the first lip portion is pressed against an outer surface of the rotating shaft 420, and thus, airtight performance between the first fastening portion 111 and the rotating shaft 420 may be secured.
  • In addition, a bearing (not illustrated) that rotatably supports the rotating shaft 420 in the radial direction of the rotating shaft 420 may be coupled to the first fastening portion 111, the bearing may be located above and below the first sealing member, and a washer member (not illustrated) surrounding the rotating shaft 420 in the radial direction of the rotating shaft 420 may be coupled between the bearing and the first sealing member.
  • Meanwhile, the mounting table 402 according to another embodiment of the present invention may be a mounting type different from a mounting type (chucking) of the mounting table 401 described above. The mounting table 402 according to one embodiment of the present invention may use an etching performance improvement unit 412 on which the object W to be etched is placed as illustrated in FIGS. 12 to 14.
  • The etching performance improvement unit 412 is formed to be recessed so that the object W is placed in a state of being inserted and immersed in the etchant L1. The etching performance improvement unit 412 may include a seating surface 412 a that is formed along an edge of the etching performance improvement unit 412 so that the object W is placed thereon and a protrusion 412 b that is formed along the edge of the seating surface 412 a to accommodate the etchant L1 above the object W.
  • The seating surface 412 a may be continuously formed along an inner circumferential surface of the mounting table 402, an upper end of the protrusion 412 b may be located higher than the seating surface 412 a, and protrusions 412 b may be consecutively formed along the edge of the seating surface 412 a.
  • In addition, a passage 430 through which air passes upward or downward may vertically pass through the mounting table 402, and thus, the passage 430 allows the air to pass upward and downward. Therefore, when the object W is placed on the edge of the seating surface 412 a, it is possible to prevent the object W from being raised due to buoyancy. In addition, a raising/lowering unit 500 for raising or lowering the object W inside the pressure chamber 101 may be further provided inside the pressure chamber 101. When the raising/lowering unit 500 is raised, the object W is located on an upper portion of the mounting table 402, and when the raising/lowering unit 500 is lowered, the object W is placed on the etching performance improvement unit 412.
  • The raising/lowering unit 500 may include a body 510 that may be raised or lowered from the lower portion of the mounting table 402 and a support pin 520 that protrudes upward from the body 510 to be raised or lowered through the passage 430 and supports the lower portion of the object W.
  • The raising/lowering pin 530 may vertically protrude from a lower portion of the body 510, the raising/lowering pin 530 may vertically pass through the second fastening portion 112 of the first chamber 110 to be coupled thereto, and a raising/lowering drive unit 540 may be mechanically connected to the raising/lowering pin 530.
  • A ring-shaped second sealing member (not illustrated) that surrounds the raising/lowering pin 530 in a state of being pressed against the raising/lowering pin 530 in a width direction may be further provided in the second fastening portion 112, and the second sealing member may use a material such as Teflon (polytetrafluoroethylene (PTFE)).
  • A second lip portion (not illustrated) may protrude from an inner circumferential surface of the second sealing member, and second lip portions may be consecutively formed along the inner circumferential surface of the second sealing member. The second lip portion may protrude obliquely upward or downward to be pressed against the raising/lowering pin 530 obliquely in the width direction of the raising/lowering pin 530, and one or more of the second lip portions may be arranged in the vertical direction of the second sealing member. In the second sealing member, the second lip portion is pressed against an outer surface of the raising/lowering pin 530, and thus, airtight performance between the second fastening portion 112 and the raising/lowering pin 530 may be secured.
  • Meanwhile, a bearing (not illustrated) that rotatably supports the raising/lowering pin 530 in the width direction of the raising/lowering pin 530 may be coupled to the second fastening portion 112, the bearing may be located above and below the second sealing member, and a washer member (not illustrated) surrounding the raising/lowering pin 530 in the width direction of the raising/lowering pin 530 may be coupled between the bearing and the second sealing member.
  • Meanwhile, driving of the above-described raising/lowering drive unit 540 and rotation drive unit 440 may be controlled by a controller (not illustrated), and a rotation speed of the rotation drive unit 440 or the like, and a raising/lowering timing or a speed of the raising/lowering drive unit 540 or the like may be controlled by the driving control of the controller.
  • Hereinafter, an operation of the etching device according to one embodiment of the present invention will be described with reference to FIGS. 16 and 17, and the same configurations as the above-described configuration will not be described repeatedly.
  • As illustrated in FIG. 16, the etching device according to one embodiment of the present invention may include a loading operation S100, a pressurization operation S200, an etching operation S300, a rinsing operation S400, a cleaning operation S500, a drying operation S600, a depressurization operation S700, and an unloading operation S800.
  • The loading operation S100 is a process of placing the object W on the mounting tables 401 and 402. In the loading operation S100, after the second chamber 120 is opened, the object W is placed on the mounting tables 401 and 402.
  • In the loading operation S100 according to one embodiment of the present invention, the second chamber 120 may be opened and the object W may be placed on the support pin 411 of the mounting table 401.
  • Meanwhile, the loading operation S100 according to another embodiment of the present invention may include a raising operation S110, a supply operation S120, and a lowering operation S130.
  • The raising operation S110 is a process of driving the raising/lowering drive unit 540 to raise the raising/lowering unit 400 to the support position of the object W. In the raising operation S110, the raising/lowering pin 530 is raised from the inside of the second fastening portion 112 by the raising/lowering driving force of the raising/lowering drive unit 540, and the upper end of the support pin 520 is located at the upper portion of the mounting table 402 through the passage 430.
  • The object supply operation S120 is a process of inserting the object W through the open pressure chamber 101 to be seated on the upper end of the support pin 520, and the object W placed on the upper end of the support pin 520 is spaced apart from the upper portion of the mounting table 402.
  • The lowering operation S130 is a process of lowering the raising/lowering unit 500 to place the object W on the mounting table 402. In the lowering operation S130, the object W is placed on the etching performance improvement unit 412 of the mounting table 402 in parallel.
  • In this case, the upper end of the support pin 520 is positioned below the seating surface 412 a through the passage 430, the edge of the object W is placed on the seating surface 412 a, and the upper surface of the object W placed on the seating surface 412 a is located lower than the upper end of the protrusion 412 b.
  • In the pressurization operation S200, the second chamber 120 is coupled to the first chamber 110 to close the pressure chamber 101, and then the pressurizing unit 800 is driven to provide gas (N2 or the like) in the pressure chamber 101 and pressurize the pressure chamber 101 to the set pressure.
  • In the etching operation S300, the etchant supply unit 600 is driven to spray the etchant L1 at high temperature through the first discharge port 131 of the first nozzle 130, and the rotation drive unit 440 is driven to rotate (at 10 to 500 rpm or the like) the mounting tables 401 and 402.
  • In the etching operation S300 according to one embodiment of the present invention, the etchant L1 may be sprayed onto the object W placed on the support pins 411 of the mounting table 401, and when the etchant L1 is sprayed onto the object W rotated together with the mounting table 401, the etchant L1 may be accommodated in the accommodation portion 123 while being dropped out through the edge of the object W by a centrifugal force.
  • Meanwhile, in the etching operation S300 according to another embodiment of the present invention, the etchant L1 is sprayed onto the object W placed on the etching performance improvement unit 412 of the mounting table 402, and the object W may be etched in a state of being immersed in the etchant L1 accommodated inside the protrusion 412 b.
  • When the etchant L1 is sprayed onto the object W rotating together with the mounting table 402, the etchant L1 may be accommodated in the accommodation portion 123 while being removed to the outside through the edge of the object W by the centrifugal force.
  • The etchant L1 at high temperature is easily deprived of heat by the atmosphere. When the etchant L1 sprayed onto the upper portion of the object W is spread to the edge by the centrifugal force, a temperature difference between the cleaning liquids L3 at the center and the edge of the object W increases due to a heat loss, and thus, the edge of the object W may not be easily etched relative to the center thereof.
  • That is, the etching is performed in the state where the object W is immersed in the etchant L1 accommodated in the protrusion 412 b, and thus, a temperature deviation of the etchant L1 may be reduced, and thus, the surface of the object W may be uniformly etched.
  • In addition, in the etching operation S300, the etchant L1 accommodated in the accommodation portion 123 may be moved to the external etchant supply unit 600 through the discharge unit 125 or to a separate storage unit (not illustrated), the etchant supply unit 600 may supply the etchant L1 at a high temperature (175° C. or the like) through the etchant inlet 121 and circulate the etchant L1 supplied into the pressure chamber 101 to resupply the etchant L1 through the etchant inlet 121.
  • In this case, the etchant L1 supplied to the pressure chamber 101 through the etchant inlet 121 may be maintained at a set temperature by the etchant supply unit 600, and the etchant supply unit 600 controls the temperature of the etchant L1 to obtain a desired etching rate and selectivity.
  • The rinsing operation S400 is a process for supplying the rinsing liquid L2 into the etching chamber 100 to clean the object W. In the rinsing operation S400, the etchant supply unit 600 is driven to spray the rinsing liquid (phosphoric acid: H3PO4) L2 at room temperature through the second discharge port 141 of the second nozzle 140. Accordingly, the object W is cooled for a period of time, and by-products and the etchant L1 remaining on the object W are removed.
  • In addition, in the rinsing operation S400, the rinsing liquid L2 may be supplied through the etchant inlet 121 or a separate inlet (not illustrated), and in the rinsing operation S400, the pressure chamber 101 may be maintained in a pressurized atmosphere, or the internal pressure of the pressure chamber 101 may be discharged to the outside to maintain the pressure chamber 101 at the atmospheric pressure. In the rinsing operation S400, the rinsing liquid L2 accommodated in the accommodation portion 123 may be discharged to an external storage unit (pressurized tank, drain tank, or the like, not illustrated) through the discharge unit 125.
  • In the etching operation S300 and the rinsing operation S400, the etchant L1 and the rinsing liquid L2 are supplied so that a supply direction of the etchant L1 and a supply direction of the rinsing liquid L2 are different, and the spraying position of the etchant L1 and the rinsing liquid L2 are gradually closer to each other in a direction toward the center W1 of the object W.
  • In the cleaning operation S500, the cleaning liquid (water or the like) L3 is supplied through the cleaning liquid inlet 122 of the second chamber 120, and at the same time, the mounting tables 401 and 402 may be rotated by the transmission of the rotational force of the rotation drive unit 440. In the cleaning operation S500, the cleaning liquid L3 accommodated in the accommodation portion 123 may be discharged to the storage unit (pressurized tank, drain tank, or the like, not illustrated) through the discharge unit 125.
  • The drying operation S600 is a process of drying the object W. A drying method in the drying operation S600 may be applied in various ways as needed, and in the drying operation S600, the mounting tables 401 and 402 may be rotated by the transmission of the rotational force of the rotation drive unit 340.
  • In the drying operation S600 and the cleaning operation S500, the pressure chamber 101 may be maintained in a pressurized atmosphere, or the internal pressure of the pressure chamber 101 may be exhausted to the outside to perform cleaning and drying under the atmospheric pressure. For example, the internal pressure of the pressure chamber 101 may be discharged by driving the exhaust unit 900 or opening the second chamber 120.
  • The depressurization operation S700 is a process of discharging the internal pressure of the pressure chamber 101 to the outside. In the depressurization operation S700, the pressure in the pressure chamber 101 is discharged to the outside by driving the exhaust unit 900, and the pressure chamber 101 is converted into the atmospheric pressure by the pressure being discharged from the exhaust unit 900.
  • The unloading operation S800 is a process of discharging the object W to the outside. In the unloading operation S800 according to one embodiment of the present invention, after the second chamber 120 is opened, the object W placed on the support pin 411 of the mounting table 401 may be discharged to the outside.
  • Meanwhile, in the unloading operation S800 according to another embodiment of the present invention, after the second chamber 120 is opened, the raising/lowering unit 400 is raised, and thus, the object W may be discharged to the outside of the pressure chamber 101. In the etching device according to one embodiment of the present invention, the etching chamber 100 is locked at the closed position, and when the pressure chamber 101 of the etching chamber 100 is maintained in the pressurized atmosphere, it is possible to prevent the etching chamber 100 from being opened by a high pressure.
  • In addition, by maintaining the inside of the etching chamber 100 in the pressurized atmosphere during the etching, vaporization may be prevented, a concentration of the etchant L1 may be kept constant, and an etching selectivity may be improved.
  • In addition, since the concentration of the etchant L1 is kept constant, additional deionized water and an additional input of the etchant are not required to maintain the concentration of the etchant L1. Accordingly, it is possible to improve a product yield and reduce consumption of the etchant L1, and in economic terms, cost may be greatly reduced. Moreover, since the etching is performed in the state where the object W is immersed in the etchant L1, a thick liquid film of the etchant L1 may be formed, and thus, it is possible to improve etching performance.
  • Heretofore, the specific embodiments of the etching device according to the present invention are described, but it is obvious that various implementation modifications are possible within a limit not departing from a scope of the present invention.
  • Therefore, the scope of the present invention is not limited to the described embodiments and should be determined by claims and equivalents to the claims to be described below.
  • That is, it should be understood that the above-described embodiments are illustrative in all respects and not limiting, and the scope of the present invention is indicated by the claims to be described below rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present invention.

Claims (12)

1. An etching device comprising:
an etching chamber;
an opening/closing unit configured to open or close the etching chamber; and
a locking unit configured to selectively lock the opening/closing unit.
2. The etching device of claim 1, wherein the locking unit is moved between a locking position at which movement of the opening/closing unit is locked and an unlocking position at which the locking is released.
3. The etching device of claim 1, wherein the opening/closing unit includes:
a chamber opening/closing unit configured to selectively open or close the etching chamber; and
an opening/closing drive unit configured to drive the chamber opening/closing unit.
4. The etching device of claim 3, further comprising a first guide portion configured to guide movement of the chamber opening/closing unit.
5. The etching device of claim 1, further comprising a pressurization maintaining unit configured to maintain the etching chamber in a pressurized atmosphere.
6. The etching device of claim 5, wherein the pressurization maintaining unit includes:
a pressurizing unit configured to maintain the etching chamber at a set pressure; and
an exhaust unit configured to discharge a gas inside the etching chamber to the outside.
7. The etching device of claim 1, wherein the locking unit locks the opening/closing unit so that the etching chamber in a pressurized atmosphere is closed and releases the locking of the opening/closing unit when the pressurized atmosphere is released.
8. The etching device of claim 5, further comprising:
a first locking unit provided in the opening/closing unit; and
a second locking unit provided in the locking unit and interlocked with the first locking unit to lock movement of the opening/closing unit.
9. The etching device of claim 8, further comprising a second guide portion configured to guide movement of the second locking unit.
10. The etching device of claim 5, wherein the pressurization maintaining unit maintains a pressure of 0.1 bar to 10 bar in the etching chamber.
11. The etching device of claim 5, further comprising an etchant supply unit configured to supply an etchant to the etching chamber.
12. The etching device of claim 1, wherein the etchant selectively uses at least one or a mixture of one or more of HF, NHO3, H2O2, IPA, NH4OH, H2O, H3PO4, and H2SO4.
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