TWI748049B - 用於多壓力建制的使用同心泵送的設備 - Google Patents

用於多壓力建制的使用同心泵送的設備 Download PDF

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TWI748049B
TWI748049B TW107103200A TW107103200A TWI748049B TW I748049 B TWI748049 B TW I748049B TW 107103200 A TW107103200 A TW 107103200A TW 107103200 A TW107103200 A TW 107103200A TW I748049 B TWI748049 B TW I748049B
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opening
vacuum pumping
processing chamber
flow valve
pumping opening
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TW201841287A (zh
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尼可萊尼古拉耶維奇 卡寧
托恩Ｑ 崔恩
迪米奇 路柏曼斯基
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美商應用材料股份有限公司
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Abstract

此處揭露用於基板處理設備的排放模組，具有一主體、一泵送環及一對稱流動閥。該主體具有經過該主體形成的第一及第二真空泵送開口。在該主體中在該第一及該第二真空泵送開口兩者上放置該泵送環。該泵送環包含具有一頂部表面、一底部表面及一開口的一實質環形主體。該頂部表面具有在該頂部表面中形成的一個或更多個穿孔，排列成與該第一真空泵送開口同心的一圖案。該底部表面具有在該底部表面中形成的一流體通路，內部連接該一個或更多個穿孔之每一者。在該實質環形主體中形成該開口，該開口實質上與該真空泵送開口對齊。在該主體中在該泵送環上放置該對稱流動閥，該對稱流動閥可在一升高位置及一降低位置之間移動。

Description

用於多壓力建制的使用同心泵送的設備
此處所描述實施例一般相關於基板處理設備，且更特定地，相關於用於基板處理設備的改良的排放模組。
電子裝置(例如，平板顯示器及積體電路)通常由一系列處理來製造，在該等處理中，在基板上沉積層且將所沉積材料蝕刻成所需圖案。該等處理通常包含物理氣相沉積(PVD)、化學氣相沉積(CVD)、電漿增強CVD (PECVD)、及其他電漿處理。特定地，電漿處理包含供應處理氣體混和物至真空腔室，且應用射頻功率(RF功率)以刺激處理氣體成電漿狀態。電漿將氣體混和物分解成執行所需沉積或蝕刻處理的離子物種。
隨著技術節點演進，針對越來越小及選擇性的蝕刻能力的需求為首要的。因此，具有針對改良處理腔室的需求，以致能可針對先進技術節點來實作的多樣的處理容積、改良的流動傳導性、及改良的處理均勻性。
此處所揭露實施例一般相關於用於基板處理設備的排放模組。排放模組包含：一主體、一泵送環及一對稱流動閥。該主體具有經過該主體形成的一第一真空泵送開口及一第二真空泵送開口。在該主體中在該第一及該第二真空泵送開口兩者上放置該泵送環。該泵送環包含具有一頂部表面、一底部表面及一開口的一實質環形主體。該頂部表面具有在該頂部表面中形成的一個或更多個穿孔。該一個或更多個穿孔排列成與該第一真空泵送開口同心的一圖案。該底部表面具有在該底部表面中形成的一流體通路。該流體通路內部連接該一個或更多個穿孔之每一者。在該實質環形主體中形成該開口。該開口實質上與該真空泵送開口對齊。在該主體中在該泵送環上放置該對稱流動閥。該對稱流動閥可在一升高位置及一降低位置之間移動，該升高位置允許經由該實質環形主體的該開口進入該真空泵送開口的通路，該降低位置實質上密封該實質環形主體的該開口。
在另一實施例中，此處揭露一種處理腔室。處理腔室包含：一腔室主體、一基板支撐組件及一排放模組。該腔室主體界定一處理區域且經配置以在該腔室主體中產生一電漿。該基板支撐組件設置於該處理區域中。該排放模組包含：一主體、一泵送環及一對稱流動閥。該主體具有經過該主體形成的一第一真空泵送開口及一第二真空泵送開口。在該主體中在該第一及該第二真空泵送開口兩者上放置該泵送環。該泵送環包含具有一頂部表面、一底部表面及一開口的一實質環形主體。該頂部表面具有在該頂部表面中形成的一個或更多個穿孔。該一個或更多個穿孔排列成與該第一真空泵送開口同心的一圖案。該底部表面具有在該底部表面中形成的一流體通路。該流體通路內部連接該一個或更多個穿孔之每一者。在該實質環形主體中形成該開口。該開口實質上與該真空泵送開口對齊。在該主體中在該泵送環上放置該對稱流動閥。該對稱流動閥可在一升高位置及一降低位置之間移動，該升高位置允許經由該實質環形主體的該開口進入該真空泵送開口的通路，該降低位置實質上密封該實質環形主體的該開口。
在另一實施例中，此處揭露在一處理腔室中處理一基板的方法。在一基板上方形成一電漿，在該處理腔室中的一基板支撐組件上放置該基板。在判斷該處理腔室中的一壓力低於包含於該處理腔室中的一真空泵送的壓力臨界值之後，在一升高位置中設定該處理腔室的一排放模組中的一對稱流動閥。判斷該處理腔室中的該壓力是否超過該真空泵送的壓力臨界值。回應於判斷該處理腔室中的該壓力超過該真空泵送的該臨界值，密封住該真空泵送且引導該處理腔室內部的流體至該排放模組中的一第二真空泵送開口。
第1圖為根據本揭示案的一個實施例的電漿處理腔室100的示意截面視圖。電漿處理腔室100可為電漿蝕刻腔室、電漿增強化學氣相沉積腔室、物理氣相沉積腔室、電漿處置腔室、離子植入腔室、或其他合適的真空處理腔室。
電漿處理腔室100可由多模組組裝。模組化設計致能電漿處理腔室符合多種處理需求。如第1圖中所展示，電漿處理腔室100可包含來源模組102、處理模組104、流動模組106、及排放模組108。可參考第2圖及此處描述的排放模組而得到排放模組108的更詳細描述。
在操作期間，基板101可置於基板支撐組件118上且曝露於處理環境中，例如在處理區域112中產生的電漿。可在電漿處理腔室100中執行的示範處理可包含蝕刻、化學氣相沉積、物理氣相沉積、植入、電漿退火、電漿處置、緩和、或其他電漿處理。可藉由來自排放模組108經由由流動模組界定的排氣通道114的吸力來維持處理區域112中的真空。處理區域112及排氣通道114繞著中央軸111實質對稱，以提供對稱電流、氣體流動、及熱剖面以建立均勻的處理條件。
在一個實施例中，如第1圖中所展示，來源模組102可為經配置以產生一個或更多個電漿的電容性耦合電漿來源，該等電漿之其中至少一者可考慮為遠端電漿且該等電漿之其中一者可考慮為直接電漿。來源模組102可包含平板堆疊109，平板堆疊109可作用如同電極(例如，陽極)，藉由隔絕器122由處理模組104隔絕及支撐。平板堆疊109可包含排列成堆疊定向的多種噴淋頭、擴散器、及篩板/阻板。平板堆疊109可經由氣體入口管126連接至氣體來源132。平板堆疊109及氣體入口管126可皆由射頻(RF)傳導性材料製造，例如鋁或不鏽鋼。平板堆疊109可經由傳導性氣體入口管126耦合至RF功率來源124。RF匹配網路125也可耦合至RF功率來源124。傳導性氣體入口管126可與電漿處理腔室100的中央軸111同軸，使得RF功率及處理氣體皆對稱地提供。
處理模組104耦合至來源模組102。處理模組104可包含封閉處理區域112的腔室主體140。腔室主體140可由對處理環境具阻抗性的傳導性材料製造，例如鋁或不鏽鋼。基板支撐組件118可中央地設置於腔室主體140內且放置以繞著中央軸111對稱地支撐處理區域112中的基板101。
可經由腔室主體140形成狹縫閥開口142以允許基板101的通路。狹縫閥144可設置於腔室主體140外部以選擇性地開啟及關閉狹縫閥開口142。
在一個實施例中，上方襯墊組件146可設置於腔室主體140的上方部分內，屏蔽腔室主體140與處理環境。上方襯墊組件146可由傳導性、處理可相容性材料構成，例如鋁、不鏽鋼、陶瓷、及/或氧化釔(例如，塗佈氧化釔的鋁)。
流動模組106接合至處理模組104。流動模組106提供在處理模組104中界定的處理區域112及排放模組108之間的流動路徑。流動模組106也提供基板支撐組件118及電漿處理腔室100外部的大氣環境之間的介面。
流動模組106包含外壁160、內壁162、在內壁162及外壁160之間連接的兩對或更多對徑向壁164、以及接合至內壁162及兩對或更多對徑向壁164的底部壁166。外壁160可包含在每一對徑向壁164之間形成的兩個或更多個穿孔170。機殼154可密封地設置於內壁162及兩對或更多對徑向壁164上。穿孔170連接由內壁162界定的大氣容積168與外部環境，因而容納設施連接，例如電連接、氣體連接、冷卻流體連接。
將流動模組106的外壁160塑形以匹配處理模組104的腔室主體140。內壁162、底部壁166、徑向壁164及機殼154將外壁160內部的容積分成排氣通道114及大氣容積168。排氣通道114與處理模組104的處理區域112連接。排氣通道114在徑向壁164之間對稱地界定以連接處理區域112及內部容積190。
排放模組108包含具有側壁194及底部196的主體192。側壁194及底部196界定內部容積190。排放模組108進一步包含對稱流動閥180、泵送環184、及真空泵送182。泵送環184及對稱流動閥180設置於排放模組108的內部容積190內。可與第2至4B圖一起更詳細討論排放模組108。在某些實施例中，真空泵送182可為對稱渦輪分子泵送。對稱流動閥180連接至排氣通道114以提供電漿處理腔室100中對稱及均勻的流動。
第2A圖根據一個實施例圖示排放模組108的頂部視圖。第2A圖描繪缺少設置於排放模組108中的泵送環184及對稱流動閥180的排放模組108的頂部視圖。如圖示，排放模組108包含兩個開口：第一真空泵送開口202及第二真空泵送開口204。在排放模組108的底部196中形成第一真空泵送開口202及第二真空泵送開口204。第一真空泵送開口202經配置以提供排氣通道114及真空泵送182之間的流體連通。第一真空泵送開口202經配置以在1 mTorr及4 Torr之間的壓力下操作。第一真空泵送開口202與處理腔室100的中央軸111同心。因此，氣體對稱地流動進入第一真空泵送開口202。第二真空泵送開口204經配置以提供排氣通道114及連接至第二真空泵送開口204的前線之間的流體連通。第二真空泵送開口204經配置以在0.5 Torr及760 Torr (1 atm)之間操作。對稱流動閥180與泵送環184的控制一起控制氣體流動是朝向第二真空泵送開口204或是朝向第一真空泵送開口202。
第2B圖根據另一實施例圖示排放模組108的頂部視圖。如所圖示，在第2B圖中展示放置於排放模組108中的泵送環184。在排放模組108中第一真空泵送開口202及第二真空泵送開口204兩者上放置泵送環184。下方與第3A及3B圖一起討論泵送環184的更詳細討論。
第3A及3B圖更詳細圖示泵送環184。泵送環184包含實質環形主體300。環形主體300包含頂部表面302、底部表面304、內壁306、及外壁308。環形主體300包含經過環形主體300形成的開口310。在一些實施例中，開口310具有直徑D，實質等於第一真空泵送開口202的直徑。泵送環184進一步包含複數個穿孔312。經過環形主體300形成複數個穿孔312之每一者，自頂部表面302及底部表面304延伸。複數個穿孔312排列成一圖案，該圖案繞著中央軸111與第一真空泵送開口202同心。在一個實施例中，每一穿孔312實質上為圓形。在另一實施例中，每一穿孔312為狹縫形。在另一實施例中，穿孔312可為弧形區段。一般而言，穿孔312的面積越大，跨過開口310的壓力降越少。因此，可據此調整每一穿孔312的大小及形狀。每一穿孔312與在環形主體的底部表面304中形成的流體通路314流體連通。流體通路314內部連接一個或更多個穿孔312以匯聚流經流體通路314的流體。在一些實施例中，形成流體通路314使得在流體通路314中對稱地繞著實質環形主體300匯聚流體。例如，在一些實施例中，可在實質環形主體300中形成流體通路314，使得流體通路314繞著實質環形主體300的縱軸390對稱。在其他實施例中，流體通路314繞著縱軸390呈非對稱。
泵送環184中的複數個穿孔312具有額外泵送入口的效應，在處理腔室100內分成多個較小入口，使得複數個穿孔312集體沿著中央軸111同心地排列。此同心圖案賦予第二真空泵送開口204沿著中央軸111同心排列的效應，而無須排放模組108中的額外空間。因此，每一穿孔312及第二真空泵送開口204之間的流動傳導性相等，因而形成完全遞迴的泵送環184。完全遞迴的泵送環184允許系統維持繞著中央軸111的同心氣體流動，同時跨處理腔室100內的不同流動及壓力來使用第二真空泵送開口204。此外，可修改穿孔312及流體通路314兩者的大小及形狀，以調整傳導性以等化流經的氣體流動。該配置的主要優點為最小化處理腔室100內的非同心流動非均勻性，因為越來越難補償非同心非一致性(例如，方位角偏斜、或僅為偏斜)。該最小化可造成來自反應器的蝕刻或沉積處理中的接近完全均勻的效能。
在該等實施例中，藉由選擇性地放置及形成每一穿孔312來在流體通路314中對稱地匯聚流體。因此，每一穿孔312的位置、形狀、及大小與流體通路314的形狀可一起規定流體自環形主體300的頂部表面302經由穿孔312流動進入底部表面304中形成的流體通路314。因此，穿孔312及流體通路314一起作用以平衡朝向第二真空泵送開口204的流體流動。
實質環形主體300進一步包含自由外壁308界定的直徑向外突出的延伸部分316。環形主體300的延伸部分316延伸於第二真空泵送開口204上。在環形主體300的底部表面304中形成的流體通路314引導在流體通路314中流動的流體朝向延伸部分316，使得流體被引導進入第二真空泵送開口204。例如，流體流動經過穿孔312且路經流體通路314，使得流體在延伸部分316處匯聚且經由第二真空泵送開口204離開。
環形主體300可進一步包含在內壁306中形成的步階320。步階320包含實質平行於頂部表面302的接收表面322。接收表面322經配置以在對稱流動閥180置於降低位置時接收對稱流動閥180(在第4B圖中更詳細討論)。
可由與處理參數可化學相容的材料形成環形主體300。例如，可由不鏽鋼、鋁、陶瓷等來形成環形主體300。
第2C圖為根據另一實施例的排放模組108的頂部視圖。如所圖示，在第2C圖中泵送環184及對稱流動閥180皆置於排放模組108中。放置對稱流動閥180於泵送環184及第一真空泵送開口202上。對稱流動閥180實質與在泵送環184中形成的開口310對齊。在一個實施例中，對稱流動閥180具有直徑D2，D2實質等於開口310的直徑D。因此，對稱流動閥180可降低進入開口310，使得對稱流動閥180防止流體流動進入開口310且向下進入第一真空泵送開口202。
對稱流動閥180一般包含碟形主體220。碟形主體220包含頂部表面222及底部表面224。一個或更多個密封228可沿著碟形主體220的周邊226耦合至碟形主體220的底部表面224。一個或更多個密封228有助於流體地密封排氣通道114阻於環形主體的開口310及第一真空泵送開口202。在環形主體300包含步階320的實施例中，一個或更多個密封228接觸由步階形成的接收表面322。
對稱流動閥180可進一步包含至少一個致動組件240。每一致動組件240包含至少一致動器244。在一些實施例中，致動組件240可進一步包含介面機構242。介面機構242可例如為一臂、裝設突片等。介面機構242可耦合至碟形主體220。介面機構242可延伸經過排放模組108，使得臂延伸於處理腔室100外部。介面機構242耦合至致動器244。致動器244經配置以垂直移動介面機構242，使得對稱流動閥180可密封住泵送環184的開口310。
在其他實施例中，對稱流動閥180可包含多於一個致動組件240。在具有多於一個致動組件240時，可繞著碟形主體的圓周均勻放置致動組件240。例如，在具有三個致動組件240的情況下，可沿著碟形主體220的圓周在約120、240及360度點處放置每一致動組件。在具有兩個致動組件240的情況下，可沿著碟形主體220的圓周在約0及180度點處放置每一致動組件。一般而言，可具有N個致動組件240以用於對稱流動閥180。
第4A圖為根據一個實施例的排放模組108的橫截面視圖。在第4A圖中所展示的實施例中，對稱流動閥180處於升高位置402。在升高位置中，對稱流動閥180功能如同傳統對稱流動閥。來自排氣通道114的流體被引導進入排放模組108。流體被引導自排放模組180經由第一真空泵送開口202進入真空泵送182。然而，在傳統處理腔室中，高壓條件受限於對稱流動閥容忍度及最大泵送入口壓力/流動。結果，存在不一致的逸漏的對稱流動閥，而可導致處理高壓下不一致的控制。
將泵送環184加入排放模組108產生對稱渦輪泵送旁路而在處理腔室100的高壓操作期間更好的控制排放。例如，第4B圖為根據一個實施例的排放模組108的橫截面視圖。在第4B圖中所展示的實施例中，對稱流動閥180處於降低位置404。在處理腔室100在高壓下操作時，移動對稱流動閥180進入降低位置404。例如，在處理腔室100在大於約1 Torr的壓力下操作時，移動對稱流動閥180進入降低位置404。一般而言，在腔室中壓力超過渦輪泵送允許的容忍度時，移動對稱流動閥180進入降低位置404。在降低位置404中，泵送環184的開口310被對稱流動閥180密封。因此，第一真空泵送開口202與排氣通道114隔絕。進入排放模組108的流體因而被迫經由一個或更多個穿孔312進入流體通路314。流體通路314與第二真空泵送開口204連通。因此，在對稱流動閥180處於降低位置404時，來自排氣通道114的流體被引導進入第二真空泵送開口204。
如第4A及4B圖兩者中所圖示，前線406耦合至第二真空泵送開口204。前線406可包含耦合於前線406中的流動控制機構408。流動控制機構408經配置以控制流體進入前線406的流動。在一些實施例中，流動控制機構408可為節流(蝶)閥。
前述係特定實施例，可修改其他及進一步的實施例而不遠離其基本範圍，且該範圍由隨後的申請專利範圍所決定。
100‧‧‧電漿處理腔室101‧‧‧基板102‧‧‧來源模組104‧‧‧處理模組106‧‧‧流動模組108‧‧‧排放模組109‧‧‧平板堆疊111‧‧‧中央軸112‧‧‧處理區域114‧‧‧排氣通道118‧‧‧基板支撐組件122‧‧‧隔絕器124‧‧‧RF功率來源125‧‧‧RF匹配網路126‧‧‧氣體入口管132‧‧‧氣體來源140‧‧‧腔室主體142‧‧‧狹縫閥開口144‧‧‧狹縫閥146‧‧‧上方襯墊組件154‧‧‧機殼160‧‧‧外壁162‧‧‧內壁164‧‧‧徑向壁166‧‧‧底部壁168‧‧‧大氣容積170‧‧‧穿孔180‧‧‧對稱流動閥182‧‧‧真空泵送184‧‧‧泵送環190‧‧‧內部容積192‧‧‧主體194‧‧‧側壁202‧‧‧第一真空泵送開口204‧‧‧第二真空泵送開口220‧‧‧碟形主體222‧‧‧頂部表面224‧‧‧底部表面226‧‧‧周邊228‧‧‧密封240‧‧‧致動組件242‧‧‧介面機構244‧‧‧致動器300‧‧‧環形主體302‧‧‧頂部表面304‧‧‧底部表面306‧‧‧內壁308‧‧‧外壁310‧‧‧開口312‧‧‧穿孔314‧‧‧流體通路316‧‧‧延伸部分320‧‧‧步階322‧‧‧接收表面390‧‧‧縱軸402‧‧‧升高位置404‧‧‧降低位置406‧‧‧前線408‧‧‧流動控制機構
於是可以詳細理解本揭示案上述特徵中的方式，可藉由參考實施例而具有本揭示案的更特定描述(簡短總結如上)，其中一些圖示於所附圖式中。然而，注意所附圖式僅圖示本揭示案典型的實施例，因此不考慮限制其範圍，因為本揭示案可允許其他等效實施例。
第1圖為根據一個實施例的處理腔室的橫截面視圖。
第2A圖為根據一個實施例的第1圖的處理腔室的排放模組的頂部視圖。
第2B圖為根據一個實施例的第1圖的處理腔室的排放模組的頂部視圖。
第2C圖為根據一個實施例的第1圖的處理腔室的排放模組的頂部視圖。
第3A圖為根據一個實施例的第1圖的排放模組的泵送環的頂部視圖。
第3B圖為根據一個實施例的第1圖的排放模組的泵送環的底部視圖。
第4A圖為根據一個實施例在對稱流動閥處於升高位置時的第1圖的排放模組的橫截面視圖。
第4B圖為根據一個實施例在對稱流動閥處於降低位置時的第1圖的排放模組的橫截面視圖。
為了清晰，使用可應用的相同元件符號以標示圖式之間共用的相同元件。據此，一個實施例的元件可優勢地適用於在其他此處描述的實施例中使用。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
184‧‧‧泵送環
300‧‧‧環形主體
302‧‧‧頂部表面
304‧‧‧底部表面
306‧‧‧內壁
308‧‧‧外壁
312‧‧‧穿孔
316‧‧‧延伸部分
320‧‧‧步階
322‧‧‧接收表面

Claims (20)

  1. 一種用於一處理腔室的排放模組，包括：一主體，該主體具有經過該主體形成的一第一真空泵送開口及一第二真空泵送開口；一泵送環，該泵送環放置在該主體中且在該第一真空泵送開口及該第二真空泵送開口兩者上，該泵送環包括：一實質環形主體，包括：一頂部表面及一底部表面，該頂部表面具有在該頂部表面中形成的一個或更多個穿孔，其中該一個或更多個穿孔排列成與該第一真空泵送開口同心的一圖案且該底部表面具有在該底部表面中形成的一流體通路，該流體通路與該第一真空泵送開口流體隔離，該流體通路將該一個或更多個穿孔之每一者內部連接至該第二真空泵送開口；及一開口，該開口形成在該實質環形主體中，該開口實質上與該第一真空泵送開口對齊；及一對稱流動閥，該對稱流動閥放置在該主體中且在該泵送環上，該對稱流動閥可在一升高位置及一降低位置之間移動，該升高位置允許經由該實質環形主體的該開口進入該第一真空泵送開口的通路，該降低位 置實質上密封該實質環形主體的該開口而不密封該一個或更多個穿孔。
  2. 如請求項1所述之排放模組，其中該實質環形主體進一步包括：一延伸部分，在該第二真空泵送開口上放置該延伸部分，其中該流體通路延伸進入該延伸部分。
  3. 如請求項1所述之排放模組，其中該對稱流動閥包括：一碟形主體，其中該碟形主體具有一直徑，該直徑實質上等於在該實質環形主體中形成的該開口的一直徑。
  4. 如請求項3所述之排放模組，其中該對稱流動閥進一步包括：一個或更多個致動器組件，其中每一致動器組件包括：一臂，該臂耦合至該碟形主體；及一致動器，該致動器耦合至該臂，該致動器經配置以在一垂直方向上移動該碟形主體。
  5. 如請求項4所述之排放模組，其中該一個或更多個致動器組件之每一者繞著該碟形主體成一陣列放置。
  6. 如請求項1所述之排放模組，其中該實質環 形主體進一步包括：一內壁及一外壁；及一步階，在該內壁中形成該步階，其中該步階界定一接收表面，該接收表面經配置以在該對稱流動閥置於該降低位置時接收該對稱流動閥。
  7. 如請求項1所述之排放模組，其中該排放模組的該主體進一步包含側壁及一底部，並且其中該第一真空泵送開口及該第二真空泵送開口形成在該排放模組的該主體的該底部中。
  8. 如請求項1所述之排放模組，其中該等穿孔之每一者為圓形。
  9. 如請求項1所述之排放模組，其中該等穿孔之每一者為狹縫形。
  10. 一種處理腔室，包括：一腔室主體，該腔室主體界定一處理區域且經配置以在該腔室主體中產生一電漿；一基板支撐組件，該基板支撐組件設置於該處理區域中；及一排放模組，包括：一主體，該主體耦合至該腔室主體，該主體具有經過該主體形成的一第一真空泵送開口及一第二真空泵送開口； 一泵送環，該泵送環放置在該主體中且在該第一真空泵送開口及該第二真空泵送開口兩者上，該泵送環包括：一實質環形主體，包括：一頂部表面及一底部表面，該頂部表面具有在該頂部表面中形成的一個或更多個穿孔，其中該一個或更多個穿孔排列成與該第一真空泵送開口同心的一圖案且該底部表面具有在該底部表面中形成的一流體通路，該流體通路與該第一真空泵送開口流體隔離，該流體通路將該一個或更多個穿孔之每一者內部連接至該第二真空泵送開口；及一開口，該開口形成在該實質環形主體中，該開口實質上與該第一真空泵送開口對齊；及一對稱流動閥，該對稱流動閥放置在該主體中且在該泵送環上，該對稱流動閥可在一升高位置及一降低位置之間移動，該升高位置允許經由該實質環形主體的該開口進入該第一真空泵送開口的通路，該降低位置實質上密封該實質環形主體的該開口而不密封該一個或更多個穿孔。
  11. 如請求項10所述之處理腔室，其中該實質環形主體進一步包括： 一延伸部分，在該第二真空泵送開口上放置該延伸部分，其中該流體通路延伸進入該延伸部分。
  12. 如請求項10所述之處理腔室，其中該對稱流動閥包括：一碟形主體，其中該碟形主體具有一直徑，該直徑實質上等於在該實質環形主體中形成的該開口的一直徑。
  13. 如請求項12所述之處理腔室，其中該對稱流動閥進一步包括：一個或更多個致動器組件，其中每一致動器組件包括：一臂，該臂耦合至該碟形主體；及一致動器，該致動器耦合至該臂，該致動器經配置以在一垂直方向上移動該碟形主體。
  14. 如請求項13所述之處理腔室，其中該一個或更多個致動器組件之每一者繞著該碟形主體成一陣列放置。
  15. 如請求項10所述之處理腔室，其中該實質環形主體進一步包括：一內壁及一外壁；及一步階，在該內壁中形成該步階，其中該步階界定一接收表面，該接收表面經配置以在該對稱流動閥置 於該降低位置時接收該對稱流動閥。
  16. 如請求項10所述之處理腔室，其中該排放模組的該主體進一步包含側壁及一底部，並且其中該第一真空泵送開口及該第二真空泵送開口形成在該排放模組的該主體的該底部中。
  17. 如請求項10所述之處理腔室，進一步包括：一前線及一對稱渦輪分子泵送，該前線耦合至該第二真空泵送開口，該對稱渦流分子泵送耦合至該第一真空泵送開口。
  18. 如請求項17所述之處理腔室，其中該前線包括：一流動控制機構，該流動控制機構經配置以控制進入該前線的流體的一流動。
  19. 如請求項18所述之處理腔室，其中該流動控制機構為一蝶閥。
  20. 一種在一處理腔室中處理一基板的方法，包括以下步驟：在一基板上方形成一電漿，該基板放置在該處理腔室中的一基板支撐組件上；回應於判斷該處理腔室中的一壓力低於該處理腔室的一真空泵送的一臨界值，在一升高位置中設定該處 理腔室的一排放模組中的一對稱流動閥；判斷該處理腔室中的該壓力是否超過該真空泵送的該臨界值；及回應於判斷該處理腔室中的該壓力超過該真空泵送的該臨界值，密封該真空泵送且引導該處理腔室內部的流體至該排放模組中的一第二真空泵送開口。
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