CN110383450B - 处理腔室的排放模块、处理腔室及其中处理基板的方法 - Google Patents

处理腔室的排放模块、处理腔室及其中处理基板的方法 Download PDF

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CN110383450B
CN110383450B CN201880016573.XA CN201880016573A CN110383450B CN 110383450 B CN110383450 B CN 110383450B CN 201880016573 A CN201880016573 A CN 201880016573A CN 110383450 B CN110383450 B CN 110383450B
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vacuum pump
opening
flow valve
pump opening
exhaust module
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CN110383450A (zh
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尼科莱·尼科拉维奇·卡林
托安·Q·特兰
德米特里·卢博米尔斯基
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Applied Materials Inc
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Applied Materials Inc
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Abstract

此处公开用于基板处理设备的排放模块，具有主体、泵送环及对称流动阀。所述主体具有穿过所述主体形成的第一及第二真空泵开口。在所述主体中在所述第一及所述第二真空泵开口两者之上放置所述泵送环。所述泵送环包含具有顶部表面、底部表面及开口的实质环形主体。所述顶部表面具有在所述顶部表面中形成的一个或多个通孔，布置成与所述第一真空泵开口同心的图案。所述底部表面具有在所述底部表面中形成的流体通路，内部连接所述一个或多个通孔的每一个。在所述实质环形主体中形成所述开口，所述开口实质上与所述真空泵开口对齐。在所述主体中在所述泵送环之上放置所述对称流动阀，所述对称流动阀可在升高位置和降低位置之间移动。

Description

处理腔室的排放模块、处理腔室及其中处理基板的方法
技术领域
此处所描述实施方式一般涉及基板处理设备，且更特定地，涉及用于基板处理设备的改良的排放模块。
背景技术
电子装置(诸如，平板显示器及集成电路)通常由一系列处理来制造，在所述处理中，在基板上沉积层且将所沉积材料蚀刻成所需图案。所述处理通常包含物理气相沉积(PVD)、化学气相沉积(CVD)、等离子体增强CVD(PECVD)、及其他等离子体处理。特定地，等离子体处理包含供应处理气体混和物至真空腔室，且施加射频功率(RF功率)以激发处理气体成等离子体状态。等离子体将气体混和物分解成执行所需沉积或蚀刻处理的离子物种。
随着技术节点演进，针对越来越小及选择性的蚀刻能力的需求为首要的。因此，具有针对改良处理腔室的需求，以能够可针对先进技术节点来实现的多样的处理容积、改良的流动传导性、及改良的处理均匀性。
发明内容
此处所公开实施方式一般涉及用于基板处理设备的排放模块。排放模块包含：主体、泵送环及对称流动阀。所述主体具有经过所述主体形成的第一真空泵开口及第二真空泵开口。在所述主体中在所述第一及所述第二真空泵开口两者之上放置所述泵送环。所述泵送环包含具有顶部表面、底部表面及开口的实质环形主体。所述顶部表面具有在所述顶部表面中形成的一个或多个通孔。所述一个或多个通孔布置成与所述第一真空泵开口同心的图案。所述底部表面具有在所述底部表面中形成的流体通路。所述流体通路内部连接所述一个或多个通孔的每一个。在所述实质环形主体中形成所述开口。所述开口实质上与所述真空泵开口对齐。在所述主体中在所述泵送环之上放置所述对称流动阀。所述对称流动阀可在升高位置及降低位置之间移动，所述升高位置允许经由所述实质环形主体的所述开口进入所述真空泵开口的通路，所述降低位置实质上密封所述实质环形主体的所述开口。
在另一实施方式中，此处公开一种处理腔室。处理腔室包含：腔室主体、基板支撑组件及排放模块。所述腔室主体限定处理区域且经配置以在所述腔室主体中产生等离子体。所述基板支撑组件设置于所述处理区域中。所述排放模块包含：主体、泵送环及对称流动阀。所述主体具有经过所述主体形成的第一真空泵开口及第二真空泵开口。在所述主体中在所述第一及所述第二真空泵开口两者之上放置所述泵送环。所述泵送环包含具有顶部表面、底部表面及开口的实质环形主体。所述顶部表面具有在所述顶部表面中形成的一个或多个通孔。所述一个或多个通孔布置成与所述第一真空泵开口同心的图案。所述底部表面具有在所述底部表面中形成的流体通路。所述流体通路内部连接所述一个或多个通孔的每一个。在所述实质环形主体中形成所述开口。所述开口实质上与所述真空泵开口对齐。在所述主体中在所述泵送环之上放置所述对称流动阀。所述对称流动阀可在升高位置和降低位置之间移动，所述升高位置允许经由所述实质环形主体的所述开口进入所述真空泵开口的通路，所述降低位置实质上密封所述实质环形主体的所述开口。
在另一实施方式中，此处公开在处理腔室中处理基板的方法。在基板上方形成等离子体，在所述处理腔室中的基板支撑组件上放置所述基板。在判断所述处理腔室中的压力低于包含于所述处理腔室中的真空泵的压力临界值之后，在升高位置中设定所述处理腔室的排放模块中的对称流动阀。判断所述处理腔室中的所述压力是否超过所述真空泵的压力临界值。响应于判断所述处理腔室中的所述压力超过所述真空泵的所述临界值，密封住所述真空泵且引导所述处理腔室内部的流体至所述排放模块中的第二真空泵开口。
附图说明
于是可以详细理解本公开案上述特征中的方式，可通过参考实施方式而具有本公开案的更特定描述(简短总结如上)，其中一些图示于所附图中。然而，注意附图仅图示本公开案典型的实施方式，因此不考虑限制本公开案的范围，因为本公开案可允许其他等效实施方式。
图1为根据一个实施方式的处理腔室的横截面视图。
图2A为根据一个实施方式的图1的处理腔室的排放模块的顶部视图。
图2B为根据一个实施方式的图1的处理腔室的排放模块的顶部视图。
图2C为根据一个实施方式的图1的处理腔室的排放模块的顶部视图。
图3A为根据一个实施方式的图1的排放模块的泵送环的顶部视图。
图3B为根据一个实施方式的图1的排放模块的泵送环的底部视图。
图4A为根据一个实施方式在对称流动阀处于升高位置时的图1的排放模块的横截面视图。
图4B为根据一个实施方式在对称流动阀处于降低位置时的图1的排放模块的横截面视图。
为了清晰，使用可应用的相同元件符号以标示图之间共享的相同元件。据此，一个实施方式的元件可优势地适用于在其他此处描述的实施方式中使用。
具体实施方式
图1为根据本公开案的一个实施方式的等离子体处理腔室100的示意截面视图。等离子体处理腔室100可为等离子体蚀刻腔室、等离子体增强化学气相沉积腔室、物理气相沉积腔室、等离子体处理腔室、离子注入腔室、或其他合适的真空处理腔室。
等离子体处理腔室100可由多模块组装。模块化设计能使等离子体处理腔室符合多种处理需求。如图1中所展示，等离子体处理腔室100可包含源模块102、处理模块104、流动模块106、及排放模块108。可参考图2及此处描述的排放模块而得到排放模块108的更详细描述。
在操作期间，基板101可置于基板支撑组件118上且暴露于处理环境中，诸如在处理区域112中产生的等离子体。可在等离子体处理腔室100中执行的示例性处理可包含蚀刻、化学气相沉积、物理气相沉积、注入、等离子体退火、等离子体处理、治理(abatement)、或其他等离子体处理。可通过来自排放模块108经由由流动模块限定的排气通道114的吸力来维持处理区域112中的真空。处理区域112及排气通道114绕着中央轴111实质对称，以提供对称电流、气体流动、及热分布以建立均匀的处理条件。
在一个实施方式中，如图1中所展示，源模块102可为经配置以产生一个或多个等离子体的电容性耦合等离子体源，所述等离子体中至少一个可考虑为远程等离子体且所述等离子体中的一个可考虑为直接等离子体。源模块102可包含平板堆叠109，平板堆叠109可作用如同电极(例如，阳极)，通过隔绝器122由处理模块104隔绝及支撑。平板堆叠109可包含布置成堆叠定向的多种喷淋头、扩散器、及筛板/阻板。平板堆叠109可通过气体入口管126连接至气源132。平板堆叠109及气体入口管126可皆由射频(RF)传导性材料制造，例如铝或不锈钢。平板堆叠109可经由传导性气体入口管126耦合至RF功率源124。RF匹配网络125也可耦合至RF功率源124。传导性气体入口管126可与等离子体处理腔室100的中央轴111同轴，使得RF功率及处理气体皆对称地提供。
处理模块104耦合至源模块102。处理模块104可包含封闭处理区域112的腔室主体140。腔室主体140可由对处理环境具阻抗性的传导性材料制造，诸如铝或不锈钢。基板支撑组件118可中央地设置于腔室主体140内且放置以绕着中央轴111对称地支撑处理区域112中的基板101。
可经由腔室主体140形成狭缝阀开口142以允许基板101的通路。狭缝阀144可设置于腔室主体140外部以选择性地开启及关闭狭缝阀开口142。
在一个实施方式中，上方衬垫组件146可设置于腔室主体140的上方部分内，将腔室主体140与处理环境屏蔽。上方衬垫组件146可由传导性、处理可兼容性材料构成，诸如铝、不锈钢、陶瓷、及/或氧化钇(例如，涂布氧化钇的铝)。
流动模块106接合至处理模块104。流动模块106提供在处理模块104中限定的处理区域112和排放模块108之间的流动路径。流动模块106也提供基板支撑组件118和等离子体处理腔室100外部的大气环境之间的接口。
流动模块106包含外壁160、内壁162、在内壁162和外壁160之间连接的两对或更多对径向壁164、以及接合至内壁162及两对或更多对径向壁164的底部壁166。外壁160可包含在每一对径向壁164之间形成的两个或更多个通孔170。机壳(chassis)154可密封地设置于内壁162及两对或更多对径向壁164上。通孔170连接由内壁162限定的大气容积168与外部环境，因而容纳设施连接，诸如电连接、气体连接、冷却流体连接。
将流动模块106的外壁160塑形以匹配处理模块104的腔室主体140。内壁162、底部壁166、径向壁164及机壳154将外壁160内部的容积分成排气通道114及大气容积168。排气通道114与处理模块104的处理区域112连接。排气通道114在径向壁164之间对称地限定以连接处理区域112及内部容积190。
排放模块108包含具有侧壁194及底部196的主体192。侧壁194及底部196限定内部容积190。排放模块108进一步包含对称流动阀180、泵送环184、及真空泵182。泵送环184及对称流动阀180设置于排放模块108的内部容积190内。可与图2至图4B一起更详细讨论排放模块108。在某些实施方式中，真空泵182可为对称涡轮分子泵。对称流动阀180连接至排气通道114以提供等离子体处理腔室100中对称及均匀的流动。
图2A图标根据一个实施方式的排放模块108的顶部视图。图2A描绘缺少设置于排放模块108中的泵送环184及对称流动阀180的排放模块108的顶部视图。如图标，排放模块108包含两个开口：第一真空泵开口202及第二真空泵开口204。在排放模块108的底部196中形成第一真空泵开口202及第二真空泵开口204。第一真空泵开口202经配置以提供排气通道114和真空泵182之间的流体连通。第一真空泵开口202经配置以在1mTorr和4Torr之间的压力下操作。第一真空泵开口202与处理腔室100的中央轴111同心。因此，气体对称地流动进入第一真空泵开口202。第二真空泵开口204经配置以提供排气通道114和连接至第二真空泵开口204的前级管道之间的流体连通。第二真空泵开口204经配置以在0.5Torr和760Torr(1atm)之间操作。对称流动阀180与泵送环184的控制一起控制气体流动是朝向第二真空泵开口204或是朝向第一真空泵开口202。
图2B图标根据另一实施方式排放模块108的顶部视图。如所图示，在图2B中展示放置于排放模块108中的泵送环184。在排放模块108中第一真空泵开口202及第二真空泵开口204两者之上放置泵送环184。下方与图3A及图3B一起讨论泵送环184的更详细讨论。
图3A及图3B更详细图示泵送环184。泵送环184包含实质环形主体300。环形主体300包含顶部表面302、底部表面304、内壁306、及外壁308。环形主体300包含经过环形主体300形成的开口310。在一些实施方式中，开口310具有直径D，实质等于第一真空泵开口202的直径。泵送环184进一步包含多个通孔312。经过环形主体300形成多个通孔312的每一个，自顶部表面302及底部表面304延伸。多个通孔312排列成一图案，所述图案绕着中央轴111与第一真空泵开口202同心。在一个实施方式中，每一通孔312实质上为圆形。在另一实施方式中，每一通孔312为狭缝形。在另一实施方式中，通孔312可为弧形区段。一般而言，通孔312的面积越大，跨过开口310的压力降越少。因此，可据此调整每一通孔312的大小及形状。每一通孔312与在环形主体的底部表面304中形成的流体通路314流体连通。流体通路314内部连接一个或多个通孔312以汇聚流经流体通路314的流体。在一些实施方式中，形成流体通路314使得在流体通路314中对称地绕着实质环形主体300汇聚流体。例如，在一些实施方式中，可在实质环形主体300中形成流体通路314，使得流体通路314绕着实质环形主体300的纵轴390对称。在其他实施方式中，流体通路314绕着纵轴390呈非对称。
泵送环184中的多个通孔312具有额外泵入口的效应，在处理腔室100内分成多个较小入口，使得多个通孔312集体沿着中央轴111同心地布置。此同心图案赋予第二真空泵开口204沿着中央轴111同心布置的效应，而无须排放模块108中的额外空间。因此，每一通孔312和第二真空泵开口204之间的流动传导性相等，因而形成完全递归的泵送环184。完全递归的泵送环184允许系统维持绕着中央轴111的同心气体流动，同时跨处理腔室100内的不同流动及压力来使用第二真空泵开口204。此外，可修改通孔312及流体通路314两者的大小及形状，以调整传导性以等化流经的气体流动。这种配置的主要优点为最小化处理腔室100内的非同心流动非均匀性，因为越来越难补偿非同心非一致性(例如，方位角偏斜、或仅为偏斜)。这种最小化可造成来自反应器的蚀刻或沉积处理中的接近完全均匀的性能。
在这些实施方式中，通过选择性地放置及形成每一通孔312来在流体通路314中对称地汇聚流体。因此，每一通孔312的位置、形状、及大小与流体通路314的形状可一起规定流体自环形主体300的顶部表面302经由通孔312流动进入底部表面304中形成的流体通路314。因此，通孔312及流体通路314一起作用以平衡朝向第二真空泵开口204的流体流动。
实质环形主体300进一步包含自由外壁308限定的直径向外突出的延伸部分316。环形主体300的延伸部分316延伸于第二真空泵开口204之上。在环形主体300的底部表面304中形成的流体通路314引导在流体通路314中流动的流体朝向延伸部分316，使得流体被引导进入第二真空泵开口204。例如，流体流动经过通孔312且路经流体通路314，使得流体在延伸部分316处汇聚且经由第二真空泵开口204离开。
环形主体300可进一步包含在内壁306中形成的台阶320。台阶320包含实质平行于顶部表面302的接收表面322。接收表面322经配置以在对称流动阀180置于降低位置时接收对称流动阀180(在图4B中更详细讨论)。
可由与处理参数可化学兼容的材料形成环形主体300。例如，可由不锈钢、铝、陶瓷等来形成环形主体300。
图2C为根据另一实施方式的排放模块108的顶部视图。如所图示，在图2C中泵送环184及对称流动阀180皆置于排放模块108中。放置对称流动阀180于泵送环184及第一真空泵开口202之上。对称流动阀180实质与在泵送环184中形成的开口310对齐。在一个实施方式中，对称流动阀180具有直径D2，D2实质等于开口310的直径D。因此，对称流动阀180可降低进入开口310，使得对称流动阀180防止流体流动进入开口310且向下进入第一真空泵开口202。
对称流动阀180一般包含碟形主体220。碟形主体220包含顶部表面222及底部表面224。一个或多个密封228可沿着碟形主体220的周边226耦合至碟形主体220的底部表面224。一个或多个密封228有助于流体地密封排气通道114隔离环形主体的开口310及第一真空泵开口202。在环形主体300包含台阶320的实施方式中，一个或多个密封228接触由台阶形成的接收表面322。
对称流动阀180可进一步包含至少一个致动组件240。每一致动组件240包含至少一个致动器244。在一些实施方式中，致动组件240可进一步包含接口机构242。接口机构242可例如为臂、安装突片(mounting tab)或类似物。接口机构242可耦合至碟形主体220。接口机构242可延伸通过排放模块108，使得臂延伸于处理腔室100外部。接口机构242耦合至致动器244。致动器244经配置以垂直移动接口机构242，使得对称流动阀180可密封住泵送环184的开口310。
在其他实施方式中，对称流动阀180可包含多于一个致动组件240。在具有多于一个致动组件240时，可绕着碟形主体的圆周均匀放置致动组件240。例如，在具有三个致动组件240的情况下，可沿着碟形主体220的圆周在约120、240及360度点处放置每一致动组件。在具有两个致动组件240的情况下，可沿着碟形主体220的圆周在约0及180度点处放置每一致动组件。一般而言，可具有N个致动组件240以用于对称流动阀180。
图4A为根据一个实施方式的排放模块108的横截面视图。在图4A中所展示的实施方式中，对称流动阀180处于升高位置402。在升高位置中，对称流动阀180功能如同传统对称流动阀。来自排气通道114的流体被引导进入排放模块108。流体被引导自排放模块180经由第一真空泵开口202进入真空泵182。然而，在传统处理腔室中，高压条件受限于对称流动阀容限及最大泵入口压力/流动。结果，存在不一致的泄露的对称流动阀，而可导致处理高压下不一致的控制。
将泵送环184加入排放模块108产生对称涡轮泵旁路而在处理腔室100的高压操作期间更好的控制排放。例如，图4B为根据一个实施方式的排放模块108的横截面视图。在图4B中所展示的实施方式中，对称流动阀180处于降低位置404。在处理腔室100在高压下操作时，移动对称流动阀180进入降低位置404。例如，在处理腔室100在大于约1Torr的压力下操作时，移动对称流动阀180进入降低位置404。一般而言，在腔室中压力超过涡轮泵允许的容限时，移动对称流动阀180进入降低位置404。在降低位置404中，泵送环184的开口310被对称流动阀180密封。因此，第一真空泵开口202与排气通道114隔绝。进入排放模块108的流体因而被迫经由一个或多个通孔312进入流体通路314。流体通路314与第二真空泵开口204连通。因此，在对称流动阀180处于降低位置404时，来自排气通道114的流体被引导进入第二真空泵开口204。
如图4A及图4B两者中所图示，前级管道406耦合至第二真空泵开口204。前级管道406可包含耦合于前级管道406中的流动控制机构408。流动控制机构408经配置以控制流体进入前级管道406的流动。在一些实施方式中，流动控制机构408可为节流(蝶)阀。
虽然前述针对特定实施方式，但可修改其他及进一步的实施方式而不远离实施方式的基本范围，且所述范围由随后的权利要求所确定。

Claims (19)

1.一种用于处理腔室的排放模块，包括：
主体，所述主体具有穿过所述主体形成的第一真空泵开口及第二真空泵开口；
泵送环，在所述主体中在所述第一及所述第二真空泵开口两者之上放置所述泵送环，所述泵送环包括：
实质环形主体，包括：
顶部表面及底部表面，所述顶部表面具有在所述顶部表面中形成的一个或多个通孔，其中所述一个或多个通孔布置成与所述第一真空泵开口同心的图案且所述底部表面具有在所述底部表面中形成的流体通路，所述流体通路与所述第一真空泵开口流体地隔离，所述流体通路内部连接所述一个或多个通孔的每一个至所述第二真空泵开口；及
开口，在所述实质环形主体中形成所述开口，所述开口实质上与所述真空泵开口对齐；及
对称流动阀，在所述主体中在所述泵送环之上放置所述对称流动阀，所述对称流动阀可在升高位置和降低位置之间移动，所述升高位置允许经由所述实质环形主体的所述开口进入所述第一真空泵开口的通路，所述降低位置实质上密封所述实质环形主体的所述开口，而不密封所述一个或多个通孔。
2.如权利要求1所述的排放模块，其中所述对称流动阀进一步包括：
一个或多个致动器组件，其中每一致动器组件包括：
臂，所述臂耦合至碟形主体；及
致动器，所述致动器耦合至所述臂，所述致动器经配置以在垂直方向上移动所述碟形主体。
3.如权利要求2所述的排放模块，其中绕着所述碟形主体放置所述一个或多个致动器组件的每一个成一阵列。
4.如权利要求1所述的排放模块，其中所述通孔的每一个为圆形。
5.如权利要求1所述的排放模块，其中所述通孔的每一个为狭缝形。
6.如权利要求1所述的排放模块，其中所述实质环形主体进一步包括：
延伸部分，在所述第二真空泵开口之上放置所述延伸部分，其中所述流体通路延伸进入所述延伸部分。
7.如权利要求1所述的排放模块，其中所述对称流动阀包括：
碟形主体，其中所述碟形主体具有一直径，所述直径实质上等于在所述实质环形主体中形成的所述开口的直径。
8.如权利要求1所述的排放模块，其中所述实质环形主体进一步包括：
内壁及外壁；及
台阶，在所述内壁中形成所述台阶，其中所述台阶限定接收表面，所述接收表面经配置以在放置所述对称流动阀于所述降低位置时接收所述对称流动阀。
9.如权利要求1所述的排放模块，其中所述排放模块的所述主体进一步包含侧壁及底部，并且其中在所述排放模块的所述主体的所述底部中形成有所述第一真空泵开口。
10.一种处理腔室，包括：
腔室主体，所述腔室主体限定处理区域且经配置以在所述腔室主体中产生等离子体；
基板支撑组件，所述基板支撑组件设置于所述处理区域中；及
排放模块，包括：
主体，所述主体耦合至所述腔室主体，所述主体具有穿过所述主体形成的第一真空泵开口及第二真空泵开口；
泵送环，在所述主体中在所述第一真空泵开口及所述第二真空泵开口两者之上放置所述泵送环，所述泵送环包括：
实质环形主体，包括：
顶部表面及底部表面，所述顶部表面具有在所述顶部表面中形成的一个或多个通孔，其中所述一个或多个通孔布置成与所述第一真空泵开口同心的图案且所述底部表面具有在所述底部表面中形成的流体通路，所述流体通路与所述第一真空泵开口流体地隔离，所述流体通路内部连接所述一个或多个通孔的每一个至所述第二真空泵开口；及
开口，在所述实质环形主体中形成所述开口，所述开口实质上与所述真空泵开口对齐；及
对称流动阀，在所述主体中在所述泵送环之上放置所述对称流动阀，所述对称流动阀可在升高位置和降低位置之间移动，所述升高位置允许经由所述实质环形主体的所述开口进入所述第一真空泵开口的通路，所述降低位置实质上密封所述实质环形主体的所述开口，而不密封所述一个或多个通孔。
11.如权利要求10所述的处理腔室，其中所述实质环形主体进一步包括：
延伸部分，在所述第二真空泵开口之上放置所述延伸部分，其中所述流体通路延伸进入所述延伸部分。
12.如权利要求10所述的处理腔室，其中所述对称流动阀包括：
碟形主体，其中所述碟形主体具有一直径，所述直径实质上等于在所述实质环形主体中形成的所述开口的直径。
13.如权利要求10所述的处理腔室，其中所述对称流动阀进一步包括：
一个或多个致动器组件，其中每一致动器组件包括：
臂，所述臂耦合至碟形主体；及
致动器，所述致动器耦合至所述臂，所述致动器经配置以在垂直方向上移动所述碟形主体。
14.如权利要求13所述的处理腔室，其中绕着所述碟形主体放置所述一个或多个致动器组件的每一个成一阵列。
15.如权利要求10所述的处理腔室，其中所述实质环形主体进一步包括：
内壁及外壁；及
台阶，在所述内壁中形成所述台阶，其中所述台阶限定接收表面，所述接收表面经配置以在放置所述对称流动阀于所述降低位置时接收所述对称流动阀。
16.如权利要求10所述的处理腔室，其中所述排放模块的所述主体进一步包含侧壁及底部，并且其中在所述排放模块的所述主体的所述底部中形成有所述第一真空泵开口。
17.如权利要求10所述的处理腔室，所述处理腔室进一步包括：
前级管道及对称涡轮分子泵，所述前级管道耦合至所述第二真空泵开口，所述对称涡流分子泵耦合至所述第一真空泵开口。
18.如权利要求17所述的处理腔室，其中所述前级管道包括：
流动控制机构，所述流动控制机构经配置以控制进入所述前级管道的流体的流动，其中所述流动控制机构为蝶阀。
19.一种在如权利要求10所述的处理腔室中处理基板的方法，所述方法包括：
在所述处理腔室中在放置于基板支撑组件上的基板上方形成等离子体；
响应于判断所述处理腔室中的压力低于所述处理腔室的真空泵的临界值，在升高位置中设定所述处理腔室的排放模块中的对称流动阀；
判断所述处理腔室中的所述压力是否超过所述真空泵的所述临界值；以及
响应于判断所述处理腔室中的所述压力超过所述真空泵的所述临界值，密封住所述真空泵且引导所述处理腔室内部的流体至所述排放模块中的第二真空泵开口。
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