JP7240958B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP7240958B2 JP7240958B2 JP2019105393A JP2019105393A JP7240958B2 JP 7240958 B2 JP7240958 B2 JP 7240958B2 JP 2019105393 A JP2019105393 A JP 2019105393A JP 2019105393 A JP2019105393 A JP 2019105393A JP 7240958 B2 JP7240958 B2 JP 7240958B2
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- 125000006850 spacer group Chemical group 0.000 claims description 27
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 239000002826 coolant Substances 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 239000006227 byproduct Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 22
- 239000003507 refrigerant Substances 0.000 description 11
- 230000007797 corrosion Effects 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 10
- 238000007789 sealing Methods 0.000 description 8
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32504—Means for preventing sputtering of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (9)
- プラズマ処理を実行するためのプラズマ処理装置であって、
チャンバと、
前記チャンバの内部空間に設けられており、その上に載置される基板を支持するように構成された支持台と、
前記チャンバの上端開口を閉じるように設けられた天部と、
前記チャンバの内部空間の中に部分的に配置された第1の部材と、
を備え、
前記天部は、
前記内部空間に接する天板と、
前記第1の部材を加熱するように構成されたヒータを含み、前記第1の部材に熱的に接するように設けられたヒータユニットと、
前記天板に対して径方向外側の領域で周方向に沿って延在する環状の第2の部材と、
前記第1の部材上に設けられた環状の第3の部材と、
前記第3の部材の内側で周方向に沿って延在する第4の部材と、
を含み、
前記第1の部材は、前記チャンバと前記第3の部材との間に配置されており、前記内部空間から前記チャンバの外側に向けて延びて前記チャンバの外側の空間に対して露出されており、
前記ヒータユニットは、前記第2の部材と前記第3の部材との間、且つ、前記第1の部材と前記第4の部材との間に設けられている、
プラズマ処理装置。 - 前記第1の部材は、アルミニウムから形成されている、請求項1に記載のプラズマ処理装置。
- 前記チャンバと前記第1の部材との間に設けられたスペーサを更に備える、請求項1又は2に記載のプラズマ処理装置。
- 前記スペーサは、アルミニウムの熱伝導率よりも低い熱伝導率を有する材料から形成されている、請求項3に記載のプラズマ処理装置。
- 前記スペーサは、ステンレスから形成されている、請求項4に記載のプラズマ処理装置。
- 前記第1の部材は、プラズマ処理による副生成物が前記チャンバの内壁面に堆積することを抑制するよう、前記チャンバの内壁面に沿って延在している、請求項1~5の何れか一項に記載のプラズマ処理装置。
- 前記ヒータユニットは、前記第1の部材に熱的に接するように設けられた本体及び該本体内に設けられた前記ヒータを含む、請求項1~6の何れか一項に記載のプラズマ処理装置。
- 前記第3の部材は、前記第1の部材に熱的に接触しており、
前記第3の部材には、そこに冷媒が供給される流路が形成されている、
請求項1~7の何れか一項に記載のプラズマ処理装置。 - 該プラズマ処理装置は、容量結合型のプラズマ処理装置であり、
前記天部は、前記天板を含む上部電極を有しており、
前記第4の部材は、前記上部電極と前記第3の部材との間に介在しており、絶縁体から形成されている、請求項1~8の何れか一項に記載のプラズマ処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020217008955A KR20210052492A (ko) | 2018-09-06 | 2019-08-23 | 플라스마 처리 장치 |
CN201980054831.8A CN112585729B (zh) | 2018-09-06 | 2019-08-23 | 等离子体处理装置 |
PCT/JP2019/033142 WO2020050071A1 (ja) | 2018-09-06 | 2019-08-23 | プラズマ処理装置 |
US17/272,771 US11869750B2 (en) | 2018-09-06 | 2019-08-23 | Plasma processing apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018166972 | 2018-09-06 | ||
JP2018166972 | 2018-09-06 |
Publications (2)
Publication Number | Publication Date |
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JP2020043328A JP2020043328A (ja) | 2020-03-19 |
JP7240958B2 true JP7240958B2 (ja) | 2023-03-16 |
Family
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JP2019105393A Active JP7240958B2 (ja) | 2018-09-06 | 2019-06-05 | プラズマ処理装置 |
Country Status (4)
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US (1) | US11869750B2 (ja) |
JP (1) | JP7240958B2 (ja) |
KR (1) | KR20210052492A (ja) |
CN (1) | CN112585729B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11532461B2 (en) * | 2018-10-23 | 2022-12-20 | Tokyo Electron Limited | Substrate processing apparatus |
JP7274347B2 (ja) * | 2019-05-21 | 2023-05-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP7374016B2 (ja) * | 2019-06-18 | 2023-11-06 | 東京エレクトロン株式会社 | 基板処理装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008505489A (ja) | 2004-06-30 | 2008-02-21 | ラム リサーチ コーポレーション | 最適化されたプラズマチャンバ上部部材のための装置 |
JP2010507231A (ja) | 2006-10-16 | 2010-03-04 | ラム リサーチ コーポレーション | 粒子を低減させる機能を持つ上部電極裏当て部材 |
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JP3220631B2 (ja) * | 1995-12-07 | 2001-10-22 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
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JP2003257938A (ja) * | 2002-02-27 | 2003-09-12 | Hitachi High-Technologies Corp | プラズマエッチング処理装置 |
JP4493932B2 (ja) * | 2003-05-13 | 2010-06-30 | 東京エレクトロン株式会社 | 上部電極及びプラズマ処理装置 |
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JP2006060073A (ja) * | 2004-08-20 | 2006-03-02 | Tokyo Electron Ltd | プラズマ処理装置 |
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CN101351871B (zh) * | 2005-11-02 | 2010-08-18 | 松下电器产业株式会社 | 等离子体处理装置 |
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JP2008226857A (ja) * | 2008-05-16 | 2008-09-25 | Matsushita Electric Ind Co Ltd | プラズマ処理方法及び装置 |
JP2010238944A (ja) | 2009-03-31 | 2010-10-21 | Panasonic Corp | プラズマ処理装置 |
JP5396256B2 (ja) | 2009-12-10 | 2014-01-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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KR20130093080A (ko) * | 2010-06-25 | 2013-08-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 이온 전류가 감소된 예비-세정 챔버 |
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-
2019
- 2019-06-05 JP JP2019105393A patent/JP7240958B2/ja active Active
- 2019-08-23 CN CN201980054831.8A patent/CN112585729B/zh active Active
- 2019-08-23 US US17/272,771 patent/US11869750B2/en active Active
- 2019-08-23 KR KR1020217008955A patent/KR20210052492A/ko unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008505489A (ja) | 2004-06-30 | 2008-02-21 | ラム リサーチ コーポレーション | 最適化されたプラズマチャンバ上部部材のための装置 |
JP2010507231A (ja) | 2006-10-16 | 2010-03-04 | ラム リサーチ コーポレーション | 粒子を低減させる機能を持つ上部電極裏当て部材 |
JP2014130924A (ja) | 2012-12-28 | 2014-07-10 | Tokyo Electron Ltd | プラズマ処理容器及びプラズマ処理装置 |
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Publication number | Publication date |
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CN112585729A (zh) | 2021-03-30 |
US11869750B2 (en) | 2024-01-09 |
JP2020043328A (ja) | 2020-03-19 |
US20210272779A1 (en) | 2021-09-02 |
KR20210052492A (ko) | 2021-05-10 |
CN112585729B (zh) | 2024-04-05 |
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