TWI739025B - 混合接合結構及其製造方法 - Google Patents

混合接合結構及其製造方法 Download PDF

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TWI739025B
TWI739025B TW107128598A TW107128598A TWI739025B TW I739025 B TWI739025 B TW I739025B TW 107128598 A TW107128598 A TW 107128598A TW 107128598 A TW107128598 A TW 107128598A TW I739025 B TWI739025 B TW I739025B
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Taiwan
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conductor
integrated circuit
dielectric layer
conductors
interconnection structure
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TW107128598A
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Chinese (zh)
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TW201926483A (zh
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蔡伯宗
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台灣積體電路製造股份有限公司
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    • H01L2924/20104Temperature range 100 C=<T<150 C, 373.15 K =< T < 423.15K
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/201Temperature ranges
    • H01L2924/20105Temperature range 150 C=<T<200 C, 423.15 K =< T < 473.15K
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/201Temperature ranges
    • H01L2924/20108Temperature range 300 C=<T<350 C, 573.15K =<T< 623.15K
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/201Temperature ranges
    • H01L2924/20109Temperature range 350 C=<T<400 C, 623.15K =<T< 673.15K
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    • H01L2924/201Temperature ranges
    • H01L2924/2011Temperature range 400 C=<T<450 C, 673.15K =<T< 723.15K

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Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8735219B2 (en) 2012-08-30 2014-05-27 Ziptronix, Inc. Heterogeneous annealing method and device
US10204893B2 (en) 2016-05-19 2019-02-12 Invensas Bonding Technologies, Inc. Stacked dies and methods for forming bonded structures
US10269756B2 (en) 2017-04-21 2019-04-23 Invensas Bonding Technologies, Inc. Die processing
JP2018190766A (ja) * 2017-04-28 2018-11-29 ソニーセミコンダクタソリューションズ株式会社 半導体デバイス、製造方法、撮像素子、および電子機器
US10879212B2 (en) 2017-05-11 2020-12-29 Invensas Bonding Technologies, Inc. Processed stacked dies
US10811401B1 (en) * 2017-12-08 2020-10-20 Facebook Technologies, Llc Maintaining alignment between a LED device and a backplane during bonding
US10727219B2 (en) 2018-02-15 2020-07-28 Invensas Bonding Technologies, Inc. Techniques for processing devices
US11276676B2 (en) 2018-05-15 2022-03-15 Invensas Bonding Technologies, Inc. Stacked devices and methods of fabrication
US10937755B2 (en) * 2018-06-29 2021-03-02 Advanced Micro Devices, Inc. Bond pads for low temperature hybrid bonding
WO2020010056A1 (en) 2018-07-03 2020-01-09 Invensas Bonding Technologies, Inc. Techniques for joining dissimilar materials in microelectronics
WO2020010136A1 (en) 2018-07-06 2020-01-09 Invensas Bonding Technologies, Inc. Molded direct bonded and interconnected stack
WO2020010265A1 (en) 2018-07-06 2020-01-09 Invensas Bonding Technologies, Inc. Microelectronic assemblies
EP3667721A1 (en) * 2018-12-10 2020-06-17 IMEC vzw Method for fabricating an optical device
WO2020150159A1 (en) 2019-01-14 2020-07-23 Invensas Bonding Technologies, Inc. Bonded structures
JP7321724B2 (ja) * 2019-03-05 2023-08-07 キヤノン株式会社 半導体装置および機器
US11296053B2 (en) 2019-06-26 2022-04-05 Invensas Bonding Technologies, Inc. Direct bonded stack structures for increased reliability and improved yield in microelectronics
US11195810B2 (en) * 2019-08-23 2021-12-07 Taiwan Semiconductor Manufacturing Company, Ltd. Bonding structure and method of forming same
KR20210027578A (ko) * 2019-08-28 2021-03-11 삼성전자주식회사 반도체 패키지
US12080672B2 (en) * 2019-09-26 2024-09-03 Adeia Semiconductor Bonding Technologies Inc. Direct gang bonding methods including directly bonding first element to second element to form bonded structure without adhesive
KR20210048638A (ko) 2019-10-23 2021-05-04 삼성전자주식회사 반도체 패키지
US11380645B2 (en) * 2019-11-26 2022-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure comprising at least one system-on-integrated-circuit component
US11387204B2 (en) * 2020-01-16 2022-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method of fabricating the same
CN111244057B (zh) * 2020-02-12 2021-01-22 武汉新芯集成电路制造有限公司 一种键合结构及其制造方法
DE102020116340A1 (de) * 2020-02-27 2021-09-02 Taiwan Semiconductor Manufacturing Co., Ltd. Gestapelter bildsensorvorrichtung und deren herstellungsverfahren
US11594571B2 (en) 2020-02-27 2023-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Stacked image sensor device and method of forming same
CN115943489A (zh) * 2020-03-19 2023-04-07 隔热半导体粘合技术公司 用于直接键合结构的尺寸补偿控制
US11742314B2 (en) * 2020-03-31 2023-08-29 Adeia Semiconductor Bonding Technologies Inc. Reliable hybrid bonded apparatus
US11107775B1 (en) * 2020-03-31 2021-08-31 Nanya Technology Corporation Semiconductor device with electrically floating contacts between signal-transmitting contacts
US11631647B2 (en) 2020-06-30 2023-04-18 Adeia Semiconductor Bonding Technologies Inc. Integrated device packages with integrated device die and dummy element
US11587894B2 (en) * 2020-07-09 2023-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Package and method of fabricating the same
JP2022018705A (ja) * 2020-07-16 2022-01-27 キヤノン株式会社 半導体装置
US12021057B2 (en) * 2021-08-31 2024-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and semiconductor die
KR102630226B1 (ko) * 2021-09-23 2024-01-29 한화정밀기계 주식회사 하이브리드 본딩 장치 및 이를 이용하는 하이브리드 본딩 방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201344892A (zh) * 2012-04-27 2013-11-01 Taiwan Semiconductor Mfg 半導體裝置與其製法
US20150108644A1 (en) * 2013-10-17 2015-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. 3D Integrated Circuit and Methods of Forming the Same
TW201643971A (zh) * 2015-06-03 2016-12-16 華亞科技股份有限公司 晶圓級封裝及其製作方法
US9666573B1 (en) * 2016-10-26 2017-05-30 Micron Technology, Inc. Methods of forming integrated circuitry
TW201724488A (zh) * 2015-12-28 2017-07-01 台灣積體電路製造股份有限公司 堆疊式單光子雪崩二極體影像感測器
TW201739028A (zh) * 2016-04-26 2017-11-01 台灣積體電路製造股份有限公司 混合接合半導體晶圓的3dic結構與方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012178496A (ja) 2011-02-28 2012-09-13 Sony Corp 固体撮像装置、電子機器、半導体装置、固体撮像装置の製造方法
US8809123B2 (en) 2012-06-05 2014-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Three dimensional integrated circuit structures and hybrid bonding methods for semiconductor wafers
US8710607B2 (en) * 2012-07-12 2014-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for image sensor packaging
US9443796B2 (en) * 2013-03-15 2016-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Air trench in packages incorporating hybrid bonding
US9087821B2 (en) * 2013-07-16 2015-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Hybrid bonding with through substrate via (TSV)
US9711555B2 (en) * 2013-09-27 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Dual facing BSI image sensors with wafer level stacking
US9299736B2 (en) * 2014-03-28 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid bonding with uniform pattern density
US10355039B2 (en) 2015-05-18 2019-07-16 Sony Corporation Semiconductor device and imaging device
US10515908B2 (en) * 2017-10-31 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Seal ring for bonded dies

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201344892A (zh) * 2012-04-27 2013-11-01 Taiwan Semiconductor Mfg 半導體裝置與其製法
US20150108644A1 (en) * 2013-10-17 2015-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. 3D Integrated Circuit and Methods of Forming the Same
TW201643971A (zh) * 2015-06-03 2016-12-16 華亞科技股份有限公司 晶圓級封裝及其製作方法
TW201724488A (zh) * 2015-12-28 2017-07-01 台灣積體電路製造股份有限公司 堆疊式單光子雪崩二極體影像感測器
TW201739028A (zh) * 2016-04-26 2017-11-01 台灣積體電路製造股份有限公司 混合接合半導體晶圓的3dic結構與方法
US9666573B1 (en) * 2016-10-26 2017-05-30 Micron Technology, Inc. Methods of forming integrated circuitry

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