TWI738082B - 一種連接金屬和樹脂之接著劑、接著層及其應用 - Google Patents

一種連接金屬和樹脂之接著劑、接著層及其應用 Download PDF

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TWI738082B
TWI738082B TW108136690A TW108136690A TWI738082B TW I738082 B TWI738082 B TW I738082B TW 108136690 A TW108136690 A TW 108136690A TW 108136690 A TW108136690 A TW 108136690A TW I738082 B TWI738082 B TW I738082B
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metal
resin
adhesive
adhesive layer
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TW202115162A (zh
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余則威
范顥瀚
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才將科技股份有限公司
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Priority to US17/064,728 priority patent/US11639454B2/en
Priority to KR1020200129249A priority patent/KR102417597B1/ko
Priority to JP2020170555A priority patent/JP7168996B2/ja
Priority to CN202011075031.5A priority patent/CN112646544B/zh
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Abstract

本發明係提供一種連接金屬和樹脂之接著劑,其包含一胺基矽烷化合物、一交聯劑和一有機金屬化合物,以該連接金屬和樹脂之接著劑的總重量計,該胺基矽烷化合物所佔的重量百分比是0.0001~3重量%,該交聯劑所佔的重量百分比是0.0001~1重量%,和該有機金屬化合物所佔的重量百分比是0.0001~1重量%。特別地,該連接金屬和樹脂之接著劑所形成的接著層的金屬原子比例小於50%,能應用在封裝製程,如先進的半導體封裝製程。

Description

一種連接金屬和樹脂之接著劑、接著層及其應用
本發明係關於一種連接金屬和樹脂之接著劑,其包含一胺基矽烷化合物、一交聯劑和一有機金屬化合物。特別地,該連接金屬和樹脂之接著劑所形成的接著層的金屬原子比例小於50%,因此能廣泛應用在各種電子產品的封裝製程,特別是先進的半導體封裝製程。
在手機通訊和智慧穿戴裝置產業對於新產品的尺寸和外觀薄型化之設計的需求日益增加,傳統的半導體封裝製程無法滿足其需求。因此先進的半導體封裝製程,如整合扇形晶圓級封裝技術(InFO WLP)和直通矽晶穿孔封裝技術(TSV),仍將持續主導半導體封裝產業的技術發展。
在TSV製程技術中是藉由重新佈線層(redistribution layer;RDL)將焊接凸塊分散在晶片的表面。典型的重新佈線層是一三明治結構,也就是一金屬層介於兩個鈍化層(passivation layer)之間;該鈍化層的組成包括polyimide(PI),polybenzoxazole(PBO),benzocylobutene(BCB),壓克力樹脂或環氧樹脂,其功用是保護該金屬層。但TSV製程或其他先進半導體製程所要克服的技術問題是上 述之金屬層和鈍化層之間的接著性不佳。同時該金屬層,特別是銅金屬層,常常在封裝製程中因高溫導致氧化形成氧化銅,造成重新佈線層的製程良率低落。。
綜上所述,提升先進半導體封裝製程的良率,解決克服目前遭遇的技術問題,實為現今先進半導體封裝製程亟需發展和研究的一大課題。
鑒於上述之發明背景,為了符合產業上之要求,本發明之第一目的在於提供一種連接金屬和樹脂之接著劑,該連接金屬和樹脂之接著劑的組成物包含一胺基矽烷化合物、一交聯劑和一有機金屬化合物,以該連接金屬和樹脂之接著劑的總重量計,該胺基矽烷化合物所佔的重量百分比是0.0001~3重量%,該交聯劑所佔的重量百分比是0.0001~1重量%,和該有機金屬化合物所佔的重量百分比是0.0001~1重量%。
較佳地,該連接金屬和樹脂之接著劑的組成物還包含0.0005~95重量%的水或有機溶劑。
本發明的連接金屬和樹脂之接著劑能夠在金屬和樹脂之間形成立體的網狀結構,提升接著強度,且其中摻雜源自有機金屬化合物的金屬,能有效地防止水氣、氧氣和高溫造成的接著層之結構被破壞,因此特別適合應用在先進半導體封裝技術,如銅重新佈線層製程。
本發明之第二目的在於提供一接著層,該接著層係由本發明 第一目的所述的連接金屬和樹脂之接著劑所形成。特別地,該接著層的金屬原子比例(atomic ratio)小於50%。
具體地,上述之接著層在傅立葉紅外光譜圖中包含如下所述之波數範圍(cm-1)的特徵峰:660~690cm-1、900~1100cm-1、1100~1380cm-1、1400~1500cm-1和3200~3400cm-1。較佳地,還包括1550~1650cm-1和2800~3000cm-1的特徵峰。
特別地,在900~1200cm-1的特徵峰顯示該接著層具有由矽、氧和金屬之鍵結(Si-O-M)和矽氧之鍵結(Si-O-Si)所交互形成之立體的網狀結構。
上述之接著層具有立體的網狀結構,能有效防止在膠合或封裝製程中因環境中微量的水氣、氧氣或高溫製程條件對該接著層所造成的結構損害,因此該接著層特別適合作為電子產品的結構之一部份。具體地,上述之接著層是半導體結構之一部份、電路基板結構之一部份、液晶面板結構之一部分或發光二極體結構之一部份。
本發明之第三目的在於提供一種防止金屬氧化的方法,該方法包含使本發明第一目的所述的連接金屬和樹脂之接著劑在一金屬表面形成一薄層,藉此防止金屬氧化。
具體地,上述的金屬包含銅、鋁、鈦、鎳、錫、鐵、銀、金、鋯或以上所述任一金屬所構成之合金。
綜上所述,本發明所提供的連接金屬和樹脂之接著劑是一包含胺基矽烷化合物、交聯劑和有機金屬化合物的創新組成配方;藉由上述之接著劑所形成之具有立體的網狀結構的接著層,能有效地提升 接著強度,防止水氣、氧氣或製程高溫對該接著層之結構所造成的損害,因此能廣泛應用在各種先進的電子產品封裝製程,特別是半導體的重新佈線層的製作。其次,上述的接著劑能夠有效地防止金屬基材(metal substrate)在加熱過程或和樹脂接著的過程中因微量的水分、空氣或高溫造成氧化而產生金屬氧化物,並防止該金屬基材的接著面產生孔隙缺陷;同時其所形成的接著層具有立體的網狀結構能有效提升其和高分子或樹脂之間的接著強度,且所形成的接著層具有良好的熱安定性,因此在高溫的膠合或封裝製程中,本發明的接著層結構不會被破壞,達到提升膠合或封裝製程良率之目的。據此,本發明的接著劑特別適合應用在各種需要連接金屬和樹脂的相關產業,其包括但不限於電子產品之封裝產業。
第1圖是本發明配方D所形成之接著層的FTIR圖譜;
第2圖是本發明配方D所形成之接著層的TEM EDX Line掃描圖譜;
第3圖是本發明配方E所形成之接著層的TEM EDX Line掃描圖譜;
第4圖是本發明配方D所形成之接著層的DSC圖譜;
第5圖是本發明之防止基材氧化測試實驗的結果影像圖;和
第6圖是本發明之接著層之熱循環安定性測試的結果影像圖。
有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之一較佳實施例的詳細說明中將可清楚的呈現。為了能徹底地瞭解本發明,將在下列的描述中提出詳盡的步驟及其組成。顯然地,本發明的施行並未限定於該領域之技藝者所熟習的特殊細節。另一方面,眾所周知的組成或步驟並未描述於細節中,以避免造成本發明不必要之限制。本發明的較佳實施例會詳細描述如下,然而除了這些詳細描述之外,本發明還可以廣泛地施行在其他的實施例中,且本發明的範圍不受限定,其以之後的專利範圍為準。
根據本發明的第一實施例,本發明提供一種連接金屬和樹脂之接著劑,該連接金屬和樹脂之接著劑的組成包含一胺基矽烷化合物、一交聯劑和一有機金屬化合物,以該連接金屬和樹脂之接著劑的總重量計,該胺基矽烷化合物所佔的重量百分比是0.0001~3重量%,該交聯劑所佔的重量百分比是0.0001~1重量%,和該有機金屬化合物所佔的重量百分比是0.0001~1重量%。
於一具體實施例,以該連接金屬和樹脂之接著劑的總重量計,該胺基矽烷化合物所佔的重量百分比是0.5~1重量%,該交聯劑所佔的重量百分比是0.1~0.5重量%,和該有機金屬化合物所佔的重量百分比是0.2~0.8重量%。
於一具體實施例,所述的連接金屬和樹脂之接著劑,以該連接金屬和樹脂之接著劑的總重量計,該連接金屬和樹脂之接著劑的組成物還包含0.0005~95重量%的水。較佳地,水的重量%是10~50%。
於一具體實施例,所述的連接金屬和樹脂之接著劑,以該連接金屬和樹脂之接著劑的總重量計,該連接金屬和樹脂之接著劑的組成物還包含0.0005~95重量%的溶劑。較佳地,該溶劑的重量%是50~90%。
於一具體實施例,該溶劑包含質子溶劑或非質子溶劑。例如醇類、醚類、酮類、醯胺類溶劑(NMP)、二甲基亞碸(DMSO)或1,3-二甲基-2-咪唑啉酮(1,3-dimethyl-2-imidazoline)。
於一具體實施例,該胺基矽烷化合物係為如通式(1)所示的化合物;其中R1是碳數1~10的烷基或包含胺基的碳數1~10的烷基;和R2是碳數1~3的烷基。
(NH2-R1)-Si-(O-R2)3 (1)
於一具體實施例,該胺基矽烷化合物包含(3-胺基丙基)三甲氧基矽烷((3-Aminopropyl)trimethoxysilane)、N-[3-(三甲氧基矽基)丙基]乙二胺(N-[3-(Trimethoxysilyl)propyl]ethylenediamine)、N-(3-三甲氧基矽基丙基)二乙烯三胺(N1-(3-Trimethoxysilylpropyl)diethylenetriamine)、1-[3-(三甲氧基矽基)丙基)尿素(1-[3-(Trimethoxysilyl)propyl]urea)、三甲氧基[3-(甲基胺基)丙基]矽烷(Trimethoxy[3-(methylamino)propyl]silane)、(N,N-二甲基胺基丙基)三甲氧基矽烷((N,N-Dimethylaminopropyl)trimethoxysilane)、N-(3-三乙氧基矽基丙基)二乙醇胺(N-(3-Triethoxysilylpropyl)diethanolamine)、三乙氧基-3-(2-咪唑啉)丙 基矽烷(Triethoxy-3-(2-imidazolin-1-yl)propylsilane)、三甲氧基矽基丙基修飾之聚乙烯亞胺(TRIMETHOXYSILYLPROPYL MODIFIED(POLYETHYLENIMINE))或其任一組合。
於一具體實施例,該交聯劑係為如通式(2)所示的化合物;其中R3是獨立選自碳數1~10的烷基或包含複數個官能基的碳數1~10的烷基,該複數個官能基係選自下列群組之一或其組合:胺基、氫氧基、羰基、芳香環基或矽氧烷基。
Si-(O-R3)4 (2)
於一具體實施例,該交聯劑包含四乙氧基矽烷(TEOS(tetraethoxysilane))、N,N-雙[3-(三乙氧基矽基)丙基]胺(Bis[3-(trimethoxysilyl)propyl]amine)、N,N’-雙[3-(三乙氧基矽基)丙基]乙二胺(N,N’-BIS[(3-TRIMETHOXYSILYL)PROPYL]ETHYLENEDIAMINE)、N,N’-雙[二乙基羥基]-N,N’-雙[3-(三乙氧基矽基)丙基]乙二胺(N,N’-BIS(2-HYDROXYETHYL)-N,N’-BIS(TRIMETHOXYSILYLPROPYL)ETHYLENEDIAMINE)、如式(3)所示的聚合物或其任一組合。
式(3)所示的聚合物。
Figure 108136690-A0101-12-0007-2
於一具體實施例,該有機金屬化合物係為如通式(4)所示的化合物;其中M是獨立選自鋁、鈦、鋯或釔;R4是獨立選自碳數1~5的直鏈烷基或碳數1~5的支鏈烷基。
M-(OR4)4 (4)
於一具體實施例,所述的連接金屬和樹脂之接著劑,其係用於製成一熱安定性接著層,該熱安定性接著層的金屬原子比例小於50%;或一重新佈線層。
根據本發明的第二實施例,本發明提供一種接著層,該接著層係由第一實施例所述的連接金屬和樹脂之接著劑所形成;和該接著層的金屬原子比例(atomic ratio)小於50%。
於一較佳實施例,該接著層的金屬原子比例(atomic ratio)小於20%。
於一具體實施例,該金屬原子比例包含銅原子比例、鋁原子比例、鈦原子比例、鋯原子比例或釔原子比例。
於一具體實施例,上述之接著層在傅立葉紅外光譜圖中包含如下所述之波數範圍(cm-1)的特徵峰:660~690cm-1、900~1100cm-1、1100~1380cm-1、1400~1500cm-1和3200~3400cm-1。較佳地,還包括1550~1650cm-1和2800~3000cm-1的特徵峰。
特別地,在指紋區900~1200cm-1之間的特徵峰顯示該接著層具有由矽、氧和金屬之鍵結(950~980cm-1;Si-O-M)和矽氧之鍵結(1000~1165cm-1;Si-O-Si)所交互形成之立體的網狀結構。
由上述的FTIR光譜進一步鑑別本發明提供的接著層為立體網狀結構,透過Si-O-M與Si-O-Si鍵結產生交聯,其包含如結構式(5)所示之化學結構。
Figure 108136690-A0305-02-0011-2
其中M是獨立選自鋁、鈦、鋯或釔,O是氧,A、B、C、D分別是交聯劑Si-(O-R3)4與有機金屬化合物M-(OR4)4透過縮合反應產生Si-O-M鍵結,而A、B、C、D間也透過縮合反應產生Si-O-Si鍵。
於一具體實施例,所述的接著層係為半導體結構之一部份、電路基板結構之一部份、液晶面板結構之一部份或發光二極體結構之一部份。
根據本發明的第三實施例,本發明提供一種防止金屬氧化的方法,該方法包含使如第一實施例所述的連接金屬和樹脂之接著劑在一金屬表面形成一薄層,藉此防止金屬氧化。
於一具體實施例,該金屬包含銅、鋁、鈦、鎳、錫、鐵、銀、金、鋯或以上所述任一金屬所構成之合金。
於一具體實施例,該薄層是用於連接一樹脂的接著層,該樹脂包含聚亞醯胺、環氧樹脂、丙烯酸酯、聚苯噁唑、聚苯并環丁烯或其任一組合。
於一具體實施例,所述的防止金屬氧化的方法,係應用在製作重新佈線層,特別是應用在先進半導體封裝製程的銅重新佈線層。
以下實驗例係依據上述實施例所述之內容所進行的實驗,並據此做為本發明的詳細說明。
製備接著層之通用步驟
利用浸塗法或噴塗法將本發明之接著劑注入金屬底材(如銅塊)和樹酯(如聚亞醯胺(PI))之間或先塗佈在金屬底材上,然後在進行樹酯的接著;操作時間一般而言在1.5~5分鐘,視所需要成形的接著層或塗佈層厚度決定。操作完成後,利用乾燥方式移除接著劑中的溶劑。然後進行所形成的接著層或塗佈層之各項性質分析和測試。
分別製備如表一所示的接著劑配方的接著層。其中配方A和H是沒有添加有機金屬化合物的對照組;配方B是沒有添加交聯劑的對照組,其他的是實驗組。
表一所列之N-(3-三甲氧基矽基丙基)二乙烯三胺具有如下之結構式(6)。
Figure 108136690-A0305-02-0012-3
表一所列之N-(3-三甲氧基矽基丙基)乙二胺具有如下之結構式(7)。
Figure 108136690-A0305-02-0013-4
表一所列之N,N-雙[3-(三乙氧基矽基)丙基]胺具有如下之結構式(8)。
Figure 108136690-A0305-02-0013-5
Figure 108136690-A0305-02-0013-7
接著層結構分析之一:FTIR分析
傅立葉紅外光譜分析得知接著層的官能基和鍵結型態,其中實驗組的部分皆包含以下波數範圍的特徵峰:660~690cm-1(-Si-O-Si bending)、900~1100cm-1(mixed network of Si-O-M(950-980cm-1)and Si-O-Si(1000~1165cm-1)、1100~1380cm-1(Si-C,-C-N,-C-C-,C-H in Si-CH2)、1400~1500cm-1(CH in Si-CH2)、1550~1650cm-1(-NH)、2800~3000cm-1(-CH2)和3200~3400cm-1(-OH,-NH stretch)。
於一實驗例,配方D所形成的接著層的FTIR分析圖譜和鑑定官能基或化學鍵結如第1圖所示。
接著層結構分析之二:TEM分析
接著層的橫切面使用電子穿透顯微鏡進行結構分析,並量測所含有的元素原子比例;其中配方D所形成的接著層的TEM EDX Line掃描圖譜如第2圖所示,其中鋯原子比例是5%;配方E所形成的接著層的TEM EDX Line掃描圖譜如第3圖所示,其中鋁原子比例是30~40%。
接著層之熱分析:DSC分析
熱示差掃描分析(DSC)為檢視材料結構和熱能變化關係的一重要工具,藉由DSC分析能觀察材料對於熱的敏感性,並了解材料是否會因為熱能而有結構上的變化,如測量材料的熔點,或是否會有放熱的化學反應。如第4圖所示,其是配方D所形成的接著層的DSC圖譜。明顯地,在第一輪25~350℃升溫過程和第二輪25~350℃ 升溫過程中皆沒有觀察放熱的現象,表示其結構對熱非常穩定,不會因為加熱或高溫而導致其結構變化或產生反應而釋放反應熱。據此,本發明的接著層具有非常優異的熱安定性。
防止基材氧化測試實驗
本測試所使用的基材是Cu/Si,測試條件是將上述的配方A、B、C和D分別在Cu/Si所形成的塗佈層直接在空氣中使用平板式加熱器加熱到150℃和190℃,維持10分鐘,然後觀察其外觀的顏色變化。沒有氧化的銅的氧化程度視為程度1(Level 1),當銅氧化成氧化亞銅時,其顏色會從黃銅色變深,呈現橘色,其氧化程度視為程度2(Level 2),進一步再氧化時則變成褐色的氧化銅,其氧化程度視為程度3(Level 3),最後形成綠色的鹼式碳酸銅或鹼式硫酸銅,其氧化程度視為程度4(Level 4)。測試結果如表二和第5圖所示,明顯的,沒有添加有機金屬化合物的配方A和沒有添加交聯劑的配方B的塗佈層的銅氧化程度都達到了氧化程度2以上,此表示上述配方A和B沒有防止基材氧化的功效;完全沒有塗佈配方的基材的氧化程度更高達程度4。但是使用本發明所述的配方C和D的基材在測試條件下則仍維持氧化程度1,也就是基材沒有氧化。據此,本發明的接著組成具有非常優異的防止基材氧化的能力,換言之,本發明的接著劑組成在防止金屬基材氧化上具有優異的功效。
表二
Figure 108136690-A0305-02-0016-8
接著層之熱循環安定性測試
本測試使用浸塗法(dip coating)製備金屬基材和PI樹酯之間的接著層,硬化條件是230℃維持2小時,使用的配方是上述表一的C、D、E、F、G和H,熱循環測試條件是在烘箱中加熱至260℃,維持1分鐘後,降回常溫,視為1次熱循環,共重複進行20次。
氧化程度(Oxidation level)是測量生成氧化銅的厚度;孔洞度(Void level)表示銅基材和PI樹酯之間的孔洞百分比,其孔洞生成的原因是熱應變(thermal stress relaxation)造成,孔洞度越高表示接著層的結構越不安定,其接著強度會因反覆高溫循環而下降;型態外觀(Morphology)是指銅基材(銅塊;Cu bump)的形狀。扭曲(twisted)形狀的造成原因是接著層無法有效地吸收銅和PI樹酯的熱膨脹係數所造成的熱應力。測試結果如表三和第6圖所示,其中配方D得到孔洞度的百分比僅為1%,且外觀型態沒有扭曲變形(Normal);而沒有添加有機金屬化合物的H配方所形成的接著層之孔洞度百分比是95%。據此,表示沒有添加有機金屬化合物的H配方所形成的接著層的熱循環安定性最差,而添加有有機金屬化合物的配方所形成的接著層可以維持良好的循環安定性。特別是包含有機鋯金屬化合物的配方D。
表三
Figure 108136690-A0305-02-0017-9
以上雖以特定實驗例說明本發明,但並不因此限定本發明之範圍,只要不脫離本發明之要旨,熟悉本技藝者瞭解在不脫離本發明的意圖及範圍下可進行各種變形或變更。此外,摘要部分和標題僅是用來輔助專利文件搜尋之用,並非用來限制本發明之權利範圍。
Figure 108136690-A0101-11-0002-1

Claims (14)

  1. 一種連接金屬和樹脂之接著劑,該連接金屬和樹脂之接著劑的組成包含一胺基矽烷化合物、一交聯劑和一有機金屬化合物,該胺基矽烷化合物係為如通式(1)所示的化合物:(NH2-R1)-Si-(O-R2)3 (1)其中R1是碳數1~10的烷基或包含胺基的碳數1~10的烷基和R2是碳數1~3的烷基,該交聯劑係為如通式(2)所示的化合物:Si-(O-R3)4 (2)其中R3是獨立選自碳數1~10的烷基或包含複數個官能基的碳數1~10的烷基,該複數個官能基係選自下列群組之一或其組合:胺基、氫氧基、羰基、芳香環基和矽氧烷基,和該有機金屬化合物係為如通式(4)所示的化合物:M-(OR4)4 (4)其中M是獨立選自鋁、鈦、鋯或釔,R4是獨立選自碳數1~5的直鏈烷基或碳數1~5的支鏈烷基,和以該連接金屬和樹脂之接著劑的總重量計,該胺基矽烷化合物所佔的重量百分比是0.0001~3重量%,該交聯劑所佔的重量百分比是0.0001~1重量%,和該有機金屬化合物所佔的重量百分比是0.0001~1重量%。
  2. 如申請專利範圍第1項所述的連接金屬和樹脂之接著劑,以該連接金屬和樹脂之接著劑的總重量計,該連接金屬和樹脂之接著劑的組成物還包含0.0005~95重量%的水。
  3. 如申請專利範圍第1項所述的連接金屬和樹脂之接著劑,以該連接金屬和樹脂之接著劑的總重量計,該連接金屬和樹脂之接著劑的組成物還包含0.0005~95重量%的溶劑。
  4. 如申請專利範圍第1項所述的連接金屬和樹脂之接著劑,該胺基矽烷化合物包含(3-胺基丙基)三甲氧基矽烷、N-[3-(三甲氧基矽基)丙基]乙二胺、N-(3-三甲氧基矽基丙基)二乙烯三胺、1-[3-(三甲氧基矽基)丙基)尿素、三甲氧基[3-(甲基胺基)丙基]矽烷、(N,N-二甲基胺基丙基)三甲氧基矽烷、N-(3-三乙氧基矽基丙基)二乙醇胺、三乙氧基-3-(2-咪唑啉)丙基矽烷、三甲氧基矽基丙基修飾之聚乙烯亞胺或其任一組合。
  5. 如申請專利範圍第1項所述的連接金屬和樹脂之接著劑,該交聯劑包含四乙氧基矽烷、N,N-雙[3-(三乙氧基矽基)丙基]胺、N,N-雙[3-(三乙氧基矽基)丙基]乙二胺、N,N-雙[二乙基羥基]-N,N-雙[3-(三乙氧基矽基)丙基]乙二胺、如式(3)所示的聚合物或其任一組合
    Figure 108136690-A0305-02-0019-10
  6. 如申請專利範圍第1項所述的連接金屬和樹脂之接著劑,其係用於製成一熱安定性接著層,該熱安定性接著層的金屬原子比例(atomic ratio)小於50%;或一重新佈線層。
  7. 一接著層,該接著層係由專利範圍第1~5項所述的連接金屬和樹脂之接著劑所形成;和該接著層的金屬原子比例(atomic ratio)小於50%。
  8. 如申請專利範圍第7項所述的接著層,所述的金屬原子比例包含銅原子比例、鋁原子比例、鈦原子比例、鋯原子比例或釔原子比例。
  9. 如申請專利範圍第7項所述的接著層,其係為半導體結構之一部份、電路基板結構之一部份、液晶面板結構之一部份或發光二極體結構之一部份。
  10. 如申請專利範圍第7項所述的接著層,其在傅立葉紅外光譜圖中包含如下所述之波數範圍(cm-1)的特徵峰:660~690cm-1、900~1100cm-1、1100~1380cm-1、1400~1500cm-1和3200~3400cm-1
  11. 一種防止金屬氧化的方法,該方法包含使用如申請專利範圍第1~5項所述的連接金屬和樹脂之接著劑在一金屬的表面形成一薄層,藉此防止金屬氧化。
  12. 如申請專利範圍第11項所述的防止金屬氧化的方法,該金屬包含銅、鋁、鈦、鎳、錫、鐵、銀、金、鋯或以上所述任一金屬所構成之合金。
  13. 如申請專利範圍第11項所述的防止金屬氧化的方法,該薄層是用於連接一樹脂的接著層,該樹脂包含聚亞醯胺、環氧樹脂、丙烯酸酯、聚苯噁唑、聚苯并環丁烯或其任一組合。
  14. 如申請專利範圍第11項所述的防止金屬氧化的方法,係應用在重新佈線層製程。
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