TWI732428B - 濺鍍靶及濺鍍靶之製造方法 - Google Patents

濺鍍靶及濺鍍靶之製造方法 Download PDF

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Publication number
TWI732428B
TWI732428B TW109101712A TW109101712A TWI732428B TW I732428 B TWI732428 B TW I732428B TW 109101712 A TW109101712 A TW 109101712A TW 109101712 A TW109101712 A TW 109101712A TW I732428 B TWI732428 B TW I732428B
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TW
Taiwan
Prior art keywords
sputtering target
sputtering
temperature
less
manufacturing
Prior art date
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TW109101712A
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English (en)
Chinese (zh)
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TW202035749A (zh
Inventor
曽川慎治
荒川篤俊
Original Assignee
日商Jx金屬股份有限公司
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Publication of TW202035749A publication Critical patent/TW202035749A/zh
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C38/00Ferrous alloys, e.g. steel alloys
    • C22C38/002Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C38/00Ferrous alloys, e.g. steel alloys
    • C22C38/10Ferrous alloys, e.g. steel alloys containing cobalt
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3426Material
    • H01J37/3429Plural materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183Sputtering targets therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
TW109101712A 2019-03-20 2020-01-17 濺鍍靶及濺鍍靶之製造方法 TWI732428B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP2019-053797 2019-03-20
JP2019053797 2019-03-20

Publications (2)

Publication Number Publication Date
TW202035749A TW202035749A (zh) 2020-10-01
TWI732428B true TWI732428B (zh) 2021-07-01

Family

ID=72520719

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109101712A TWI732428B (zh) 2019-03-20 2020-01-17 濺鍍靶及濺鍍靶之製造方法

Country Status (5)

Country Link
JP (2) JPWO2020188987A1 (ja)
KR (1) KR20210134760A (ja)
CN (1) CN113614281A (ja)
TW (1) TWI732428B (ja)
WO (1) WO2020188987A1 (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004346423A (ja) * 2003-04-30 2004-12-09 Hitachi Metals Ltd Fe−Co−B系合金ターゲット材、その製造方法、軟磁性膜および磁気記録媒体ならびにTMR素子
TW201641727A (zh) * 2015-03-04 2016-12-01 Jx Nippon Mining & Metals Corp 磁性材濺鍍靶及其製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100947197B1 (ko) * 2005-01-18 2010-03-11 닛코 킨조쿠 가부시키가이샤 소결용 Sb-Te 계 합금 분말 및 이 분말을 소결하여얻은 소결체 스퍼터링 타겟 그리고 소결용 Sb-Te 계합금 분말의 제조 방법
JP4699194B2 (ja) * 2005-12-15 2011-06-08 山陽特殊製鋼株式会社 FeCoB系スパッタリングターゲット材の製造方法
CA2547091A1 (fr) * 2006-05-18 2007-11-18 Hydro Quebec Procede de preparation de ceramiques, ceramiques ainsi obtenues et leurs utilisations notamment comme cible pour pulverisation cathodique
JP4970003B2 (ja) * 2006-11-17 2012-07-04 山陽特殊製鋼株式会社 Co−B系ターゲット材およびその製造方法
JP5876138B2 (ja) * 2012-03-15 2016-03-02 Jx金属株式会社 磁性材スパッタリングターゲット及びその製造方法
JP6215329B2 (ja) * 2013-08-09 2017-10-18 Jx金属株式会社 ネオジム、鉄、ボロンを主成分とする希土類粉末又はスパッタリングターゲットの製造方法、同希土類元素からなる粉末又はスパッタリングターゲット及びネオジム、鉄、ボロンを主成分とする希土類磁石用薄膜又はその製造方法
KR20180088491A (ko) 2013-11-28 2018-08-03 제이엑스금속주식회사 자성재 스퍼터링 타깃 및 그 제조 방법
JP5812217B1 (ja) * 2014-04-17 2015-11-11 三菱マテリアル株式会社 スパッタリングターゲット及びスパッタリングターゲットの製造方法
JP6660130B2 (ja) 2015-09-18 2020-03-04 山陽特殊製鋼株式会社 CoFeB系合金ターゲット材

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004346423A (ja) * 2003-04-30 2004-12-09 Hitachi Metals Ltd Fe−Co−B系合金ターゲット材、その製造方法、軟磁性膜および磁気記録媒体ならびにTMR素子
TW201641727A (zh) * 2015-03-04 2016-12-01 Jx Nippon Mining & Metals Corp 磁性材濺鍍靶及其製造方法

Also Published As

Publication number Publication date
TW202035749A (zh) 2020-10-01
CN113614281A (zh) 2021-11-05
JPWO2020188987A1 (ja) 2020-09-24
WO2020188987A1 (ja) 2020-09-24
JP2024037947A (ja) 2024-03-19
KR20210134760A (ko) 2021-11-10

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