TWI714802B - 第v族金屬化合物、其製備方法、包含其的膜沉積用前體組合物和利用該組合物的膜沉積方法 - Google Patents
第v族金屬化合物、其製備方法、包含其的膜沉積用前體組合物和利用該組合物的膜沉積方法 Download PDFInfo
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- TWI714802B TWI714802B TW106128864A TW106128864A TWI714802B TW I714802 B TWI714802 B TW I714802B TW 106128864 A TW106128864 A TW 106128864A TW 106128864 A TW106128864 A TW 106128864A TW I714802 B TWI714802 B TW I714802B
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- 0 CC1=C(*)C(CC*N(*)[N+](C)([N-]C)N(*)*)=C(*)C1=* Chemical compound CC1=C(*)C(CC*N(*)[N+](C)([N-]C)N(*)*)=C(*)C1=* 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
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- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
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- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
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- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
- H10P14/69393—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing tantalum, e.g. Ta2O5
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20160115708 | 2016-09-08 | ||
| KR10-2016-0115708 | 2016-09-08 | ||
| KR10-2017-0106403 | 2017-08-23 | ||
| KR1020170106403A KR101841444B1 (ko) | 2016-09-08 | 2017-08-23 | 5족 금속 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201827445A TW201827445A (zh) | 2018-08-01 |
| TWI714802B true TWI714802B (zh) | 2021-01-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106128864A TWI714802B (zh) | 2016-09-08 | 2017-08-25 | 第v族金屬化合物、其製備方法、包含其的膜沉積用前體組合物和利用該組合物的膜沉積方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10577385B2 (https=) |
| JP (1) | JP6803460B2 (https=) |
| KR (1) | KR101841444B1 (https=) |
| CN (1) | CN109689666B (https=) |
| TW (1) | TWI714802B (https=) |
| WO (1) | WO2018048124A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102015276B1 (ko) | 2018-02-08 | 2019-08-28 | 주식회사 메카로 | 유기금속화합물 및 이를 이용한 박막 |
| WO2020247237A1 (en) * | 2019-06-05 | 2020-12-10 | Versum Materials Us, Llc | New group v and vi transition metal precursors for thin film deposition |
| KR102858491B1 (ko) | 2019-10-08 | 2025-09-10 | 에스케이트리켐 주식회사 | 5족 금속 함유 박막 형성용 전구체 및 이를 이용한 5족 금속 함유 박막 형성 방법 및 상기 5족 금속 함유 박막을 포함하는 반도체 소자. |
| KR20220053482A (ko) * | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리 |
| KR102621779B1 (ko) * | 2021-08-31 | 2024-01-08 | 주식회사 이지티엠 | 박막 증착을 위한 니오비움 전구체 화합물 및 이를 이용한 니오비움 함유 박막의 형성 방법 |
| KR102682682B1 (ko) * | 2021-10-05 | 2024-07-09 | 주식회사 한솔케미칼 | 5족 금속 화합물, 이를 포함하는 증착용 전구체 조성물 및 이를 이용하여 박막을 형성하는 방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100060481A (ko) * | 2008-11-27 | 2010-06-07 | 주식회사 유피케미칼 | 5족 금속 산화물 또는 질화물 박막 증착용 유기금속 전구체화합물 및 이를 이용한 박막 증착 방법 |
| CN102112654A (zh) * | 2008-08-01 | 2011-06-29 | 乔治洛德方法研究和开发液化空气有限公司 | 在基质上形成含钽层的方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100426080B1 (ko) * | 1995-09-13 | 2004-07-23 | 미쓰이 가가쿠 가부시키가이샤 | 수지조성물및그의용도 |
| JPH09194526A (ja) * | 1996-01-19 | 1997-07-29 | Ube Ind Ltd | 共役ジエン重合用触媒 |
| US5981667A (en) * | 1996-11-12 | 1999-11-09 | Ube Industries, Ltd. | Impact-resistant polystyrene resin composition |
| JPH10306116A (ja) * | 1997-05-07 | 1998-11-17 | Ube Ind Ltd | ブタジエン重合用触媒 |
| SG96633A1 (en) * | 2000-07-04 | 2003-06-16 | Mitsui Chemicals Inc | Process for producing polar olefin copolymer and polar olefin copolymer obtained thereby |
| US7868103B2 (en) * | 2006-05-22 | 2011-01-11 | Ube Industries, Ltd. | Method for producing polybutadiene |
| EP2174942B1 (en) * | 2008-10-07 | 2011-11-30 | L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Niobium and vanadium organometallic precursors for thin film deposition |
| JP5731519B2 (ja) * | 2009-10-26 | 2015-06-10 | エーエスエム インターナショナル エヌ.ヴェー.Asm International N.V. | Va族元素を含む薄膜のaldのための前駆体の合成及び使用 |
| US9956548B2 (en) * | 2011-12-12 | 2018-05-01 | Chevron Phillips Chemical Company Lp | Preparation of an olefin oligomerization catalyst |
| KR20130078965A (ko) * | 2012-01-02 | 2013-07-10 | 에스케이하이닉스 주식회사 | 다성분계 유전막 형성 방법 및 반도체장치 제조 방법 |
| US9321854B2 (en) * | 2013-10-29 | 2016-04-26 | Exxonmobil Chemical Patents Inc. | Aluminum alkyl with C5 cyclic and pendent olefin polymerization catalyst |
| KR20160124028A (ko) * | 2015-04-16 | 2016-10-26 | 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | V 족-함유 필름 형성 조성물 및 v 족-함유 필름의 증착 |
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2017
- 2017-08-23 JP JP2019511918A patent/JP6803460B2/ja active Active
- 2017-08-23 WO PCT/KR2017/009188 patent/WO2018048124A1/ko not_active Ceased
- 2017-08-23 KR KR1020170106403A patent/KR101841444B1/ko active Active
- 2017-08-23 CN CN201780055127.5A patent/CN109689666B/zh active Active
- 2017-08-25 TW TW106128864A patent/TWI714802B/zh active
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2019
- 2019-03-08 US US16/296,395 patent/US10577385B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102112654A (zh) * | 2008-08-01 | 2011-06-29 | 乔治洛德方法研究和开发液化空气有限公司 | 在基质上形成含钽层的方法 |
| KR20100060481A (ko) * | 2008-11-27 | 2010-06-07 | 주식회사 유피케미칼 | 5족 금속 산화물 또는 질화물 박막 증착용 유기금속 전구체화합물 및 이를 이용한 박막 증착 방법 |
Non-Patent Citations (1)
| Title |
|---|
| W. A. Herrmann and W. Baratta, "First amido-functionalized niobium and tantalum complexes of the ansa-structural type: synthesis and photochemical Si-N bond cleavage", Journal of Organometallic Chemistry, Vol.506, 1996, Pages 357 - 361. * |
Also Published As
| Publication number | Publication date |
|---|---|
| US10577385B2 (en) | 2020-03-03 |
| CN109689666A (zh) | 2019-04-26 |
| JP6803460B2 (ja) | 2020-12-23 |
| WO2018048124A1 (ko) | 2018-03-15 |
| US20190202847A1 (en) | 2019-07-04 |
| JP2019534245A (ja) | 2019-11-28 |
| KR101841444B1 (ko) | 2018-03-23 |
| TW201827445A (zh) | 2018-08-01 |
| CN109689666B (zh) | 2020-05-05 |
| KR20180028371A (ko) | 2018-03-16 |
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