KR101841444B1 - 5족 금속 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법 - Google Patents

5족 금속 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법 Download PDF

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KR101841444B1
KR101841444B1 KR1020170106403A KR20170106403A KR101841444B1 KR 101841444 B1 KR101841444 B1 KR 101841444B1 KR 1020170106403 A KR1020170106403 A KR 1020170106403A KR 20170106403 A KR20170106403 A KR 20170106403A KR 101841444 B1 KR101841444 B1 KR 101841444B1
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group
metal
carbon atoms
film
containing film
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KR20180028371A (ko
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한원석
박명호
김대영
최준환
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주식회사 유피케미칼
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    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
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    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
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    • H10D64/0135—Making the insulator by deposition of a layer, e.g. metal, metal compound or polysilicon, followed by transformation thereof into the insulator
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  • Engineering & Computer Science (AREA)
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020170106403A 2016-09-08 2017-08-23 5족 금속 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법 Active KR101841444B1 (ko)

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TW106128864A TWI714802B (zh) 2016-09-08 2017-08-25 第v族金屬化合物、其製備方法、包含其的膜沉積用前體組合物和利用該組合物的膜沉積方法

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US (1) US10577385B2 (https=)
JP (1) JP6803460B2 (https=)
KR (1) KR101841444B1 (https=)
CN (1) CN109689666B (https=)
TW (1) TWI714802B (https=)
WO (1) WO2018048124A1 (https=)

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KR20210041830A (ko) 2019-10-08 2021-04-16 에스케이트리켐 주식회사 5족 금속 함유 박막 형성용 전구체 및 이를 이용한 5족 금속 함유 박막 형성 방법 및 상기 5족 금속 함유 박막을 포함하는 반도체 소자.

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KR102015276B1 (ko) 2018-02-08 2019-08-28 주식회사 메카로 유기금속화합물 및 이를 이용한 박막
WO2020247237A1 (en) * 2019-06-05 2020-12-10 Versum Materials Us, Llc New group v and vi transition metal precursors for thin film deposition
KR20220053482A (ko) * 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
KR102621779B1 (ko) * 2021-08-31 2024-01-08 주식회사 이지티엠 박막 증착을 위한 니오비움 전구체 화합물 및 이를 이용한 니오비움 함유 박막의 형성 방법
KR102682682B1 (ko) * 2021-10-05 2024-07-09 주식회사 한솔케미칼 5족 금속 화합물, 이를 포함하는 증착용 전구체 조성물 및 이를 이용하여 박막을 형성하는 방법

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KR20210041830A (ko) 2019-10-08 2021-04-16 에스케이트리켐 주식회사 5족 금속 함유 박막 형성용 전구체 및 이를 이용한 5족 금속 함유 박막 형성 방법 및 상기 5족 금속 함유 박막을 포함하는 반도체 소자.
KR102858491B1 (ko) * 2019-10-08 2025-09-10 에스케이트리켐 주식회사 5족 금속 함유 박막 형성용 전구체 및 이를 이용한 5족 금속 함유 박막 형성 방법 및 상기 5족 금속 함유 박막을 포함하는 반도체 소자.

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CN109689666A (zh) 2019-04-26
JP6803460B2 (ja) 2020-12-23
WO2018048124A1 (ko) 2018-03-15
US20190202847A1 (en) 2019-07-04
JP2019534245A (ja) 2019-11-28
TW201827445A (zh) 2018-08-01
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CN109689666B (zh) 2020-05-05
KR20180028371A (ko) 2018-03-16

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