CN109689666B - 第五主族金属化合物、其制备方法、包含其的膜沉积前体组合物及使用其的膜沉积方法 - Google Patents
第五主族金属化合物、其制备方法、包含其的膜沉积前体组合物及使用其的膜沉积方法 Download PDFInfo
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- CN109689666B CN109689666B CN201780055127.5A CN201780055127A CN109689666B CN 109689666 B CN109689666 B CN 109689666B CN 201780055127 A CN201780055127 A CN 201780055127A CN 109689666 B CN109689666 B CN 109689666B
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
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- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
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- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
- H10P14/69393—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing tantalum, e.g. Ta2O5
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20160115708 | 2016-09-08 | ||
| KR10-2016-0115708 | 2016-09-08 | ||
| PCT/KR2017/009188 WO2018048124A1 (ko) | 2016-09-08 | 2017-08-23 | 5족 금속 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109689666A CN109689666A (zh) | 2019-04-26 |
| CN109689666B true CN109689666B (zh) | 2020-05-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780055127.5A Active CN109689666B (zh) | 2016-09-08 | 2017-08-23 | 第五主族金属化合物、其制备方法、包含其的膜沉积前体组合物及使用其的膜沉积方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10577385B2 (https=) |
| JP (1) | JP6803460B2 (https=) |
| KR (1) | KR101841444B1 (https=) |
| CN (1) | CN109689666B (https=) |
| TW (1) | TWI714802B (https=) |
| WO (1) | WO2018048124A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102015276B1 (ko) | 2018-02-08 | 2019-08-28 | 주식회사 메카로 | 유기금속화합물 및 이를 이용한 박막 |
| WO2020247237A1 (en) * | 2019-06-05 | 2020-12-10 | Versum Materials Us, Llc | New group v and vi transition metal precursors for thin film deposition |
| KR102858491B1 (ko) | 2019-10-08 | 2025-09-10 | 에스케이트리켐 주식회사 | 5족 금속 함유 박막 형성용 전구체 및 이를 이용한 5족 금속 함유 박막 형성 방법 및 상기 5족 금속 함유 박막을 포함하는 반도체 소자. |
| KR20220053482A (ko) * | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리 |
| KR102621779B1 (ko) * | 2021-08-31 | 2024-01-08 | 주식회사 이지티엠 | 박막 증착을 위한 니오비움 전구체 화합물 및 이를 이용한 니오비움 함유 박막의 형성 방법 |
| KR102682682B1 (ko) * | 2021-10-05 | 2024-07-09 | 주식회사 한솔케미칼 | 5족 금속 화합물, 이를 포함하는 증착용 전구체 조성물 및 이를 이용하여 박막을 형성하는 방법 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100426080B1 (ko) * | 1995-09-13 | 2004-07-23 | 미쓰이 가가쿠 가부시키가이샤 | 수지조성물및그의용도 |
| JPH09194526A (ja) * | 1996-01-19 | 1997-07-29 | Ube Ind Ltd | 共役ジエン重合用触媒 |
| US5981667A (en) * | 1996-11-12 | 1999-11-09 | Ube Industries, Ltd. | Impact-resistant polystyrene resin composition |
| JPH10306116A (ja) * | 1997-05-07 | 1998-11-17 | Ube Ind Ltd | ブタジエン重合用触媒 |
| SG96633A1 (en) * | 2000-07-04 | 2003-06-16 | Mitsui Chemicals Inc | Process for producing polar olefin copolymer and polar olefin copolymer obtained thereby |
| US7868103B2 (en) * | 2006-05-22 | 2011-01-11 | Ube Industries, Ltd. | Method for producing polybutadiene |
| KR101589777B1 (ko) * | 2008-08-01 | 2016-01-28 | 레르 리키드 쏘시에떼 아노님 뿌르 레?드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 기재 상에 탄탈-함유 층의 형성 방법 |
| EP2174942B1 (en) * | 2008-10-07 | 2011-11-30 | L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Niobium and vanadium organometallic precursors for thin film deposition |
| KR20100060481A (ko) * | 2008-11-27 | 2010-06-07 | 주식회사 유피케미칼 | 5족 금속 산화물 또는 질화물 박막 증착용 유기금속 전구체화합물 및 이를 이용한 박막 증착 방법 |
| JP5731519B2 (ja) * | 2009-10-26 | 2015-06-10 | エーエスエム インターナショナル エヌ.ヴェー.Asm International N.V. | Va族元素を含む薄膜のaldのための前駆体の合成及び使用 |
| US9956548B2 (en) * | 2011-12-12 | 2018-05-01 | Chevron Phillips Chemical Company Lp | Preparation of an olefin oligomerization catalyst |
| KR20130078965A (ko) * | 2012-01-02 | 2013-07-10 | 에스케이하이닉스 주식회사 | 다성분계 유전막 형성 방법 및 반도체장치 제조 방법 |
| US9321854B2 (en) * | 2013-10-29 | 2016-04-26 | Exxonmobil Chemical Patents Inc. | Aluminum alkyl with C5 cyclic and pendent olefin polymerization catalyst |
| KR20160124028A (ko) * | 2015-04-16 | 2016-10-26 | 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | V 족-함유 필름 형성 조성물 및 v 족-함유 필름의 증착 |
-
2017
- 2017-08-23 JP JP2019511918A patent/JP6803460B2/ja active Active
- 2017-08-23 WO PCT/KR2017/009188 patent/WO2018048124A1/ko not_active Ceased
- 2017-08-23 KR KR1020170106403A patent/KR101841444B1/ko active Active
- 2017-08-23 CN CN201780055127.5A patent/CN109689666B/zh active Active
- 2017-08-25 TW TW106128864A patent/TWI714802B/zh active
-
2019
- 2019-03-08 US US16/296,395 patent/US10577385B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US10577385B2 (en) | 2020-03-03 |
| CN109689666A (zh) | 2019-04-26 |
| JP6803460B2 (ja) | 2020-12-23 |
| WO2018048124A1 (ko) | 2018-03-15 |
| US20190202847A1 (en) | 2019-07-04 |
| JP2019534245A (ja) | 2019-11-28 |
| KR101841444B1 (ko) | 2018-03-23 |
| TW201827445A (zh) | 2018-08-01 |
| TWI714802B (zh) | 2021-01-01 |
| KR20180028371A (ko) | 2018-03-16 |
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Application publication date: 20190426 Assignee: Jiangsu Xianke semiconductor new materials Co.,Ltd. Assignor: UP CHEMICAL Co.,Ltd. Contract record no.: X2022990000316 Denomination of invention: Fifth main group metal compound, its preparation method, film deposition precursor composition containing it and film deposition method using it Granted publication date: 20200505 License type: Exclusive License Record date: 20220621 |