CN109689666B - 第五主族金属化合物、其制备方法、包含其的膜沉积前体组合物及使用其的膜沉积方法 - Google Patents

第五主族金属化合物、其制备方法、包含其的膜沉积前体组合物及使用其的膜沉积方法 Download PDF

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CN109689666B
CN109689666B CN201780055127.5A CN201780055127A CN109689666B CN 109689666 B CN109689666 B CN 109689666B CN 201780055127 A CN201780055127 A CN 201780055127A CN 109689666 B CN109689666 B CN 109689666B
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compound
metal
butyl
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CN109689666A (zh
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韩元锡
朴明镐
金大荣
崔晙焕
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UP Chemical Co Ltd
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CN201780055127.5A 2016-09-08 2017-08-23 第五主族金属化合物、其制备方法、包含其的膜沉积前体组合物及使用其的膜沉积方法 Active CN109689666B (zh)

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KR20160115708 2016-09-08
KR10-2016-0115708 2016-09-08
PCT/KR2017/009188 WO2018048124A1 (ko) 2016-09-08 2017-08-23 5족 금속 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법

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KR102015276B1 (ko) 2018-02-08 2019-08-28 주식회사 메카로 유기금속화합물 및 이를 이용한 박막
WO2020247237A1 (en) * 2019-06-05 2020-12-10 Versum Materials Us, Llc New group v and vi transition metal precursors for thin film deposition
KR102858491B1 (ko) 2019-10-08 2025-09-10 에스케이트리켐 주식회사 5족 금속 함유 박막 형성용 전구체 및 이를 이용한 5족 금속 함유 박막 형성 방법 및 상기 5족 금속 함유 박막을 포함하는 반도체 소자.
KR20220053482A (ko) * 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
KR102621779B1 (ko) * 2021-08-31 2024-01-08 주식회사 이지티엠 박막 증착을 위한 니오비움 전구체 화합물 및 이를 이용한 니오비움 함유 박막의 형성 방법
KR102682682B1 (ko) * 2021-10-05 2024-07-09 주식회사 한솔케미칼 5족 금속 화합물, 이를 포함하는 증착용 전구체 조성물 및 이를 이용하여 박막을 형성하는 방법

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
KR100426080B1 (ko) * 1995-09-13 2004-07-23 미쓰이 가가쿠 가부시키가이샤 수지조성물및그의용도
JPH09194526A (ja) * 1996-01-19 1997-07-29 Ube Ind Ltd 共役ジエン重合用触媒
US5981667A (en) * 1996-11-12 1999-11-09 Ube Industries, Ltd. Impact-resistant polystyrene resin composition
JPH10306116A (ja) * 1997-05-07 1998-11-17 Ube Ind Ltd ブタジエン重合用触媒
SG96633A1 (en) * 2000-07-04 2003-06-16 Mitsui Chemicals Inc Process for producing polar olefin copolymer and polar olefin copolymer obtained thereby
US7868103B2 (en) * 2006-05-22 2011-01-11 Ube Industries, Ltd. Method for producing polybutadiene
KR101589777B1 (ko) * 2008-08-01 2016-01-28 레르 리키드 쏘시에떼 아노님 뿌르 레?드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 기재 상에 탄탈-함유 층의 형성 방법
EP2174942B1 (en) * 2008-10-07 2011-11-30 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Niobium and vanadium organometallic precursors for thin film deposition
KR20100060481A (ko) * 2008-11-27 2010-06-07 주식회사 유피케미칼 5족 금속 산화물 또는 질화물 박막 증착용 유기금속 전구체화합물 및 이를 이용한 박막 증착 방법
JP5731519B2 (ja) * 2009-10-26 2015-06-10 エーエスエム インターナショナル エヌ.ヴェー.Asm International N.V. Va族元素を含む薄膜のaldのための前駆体の合成及び使用
US9956548B2 (en) * 2011-12-12 2018-05-01 Chevron Phillips Chemical Company Lp Preparation of an olefin oligomerization catalyst
KR20130078965A (ko) * 2012-01-02 2013-07-10 에스케이하이닉스 주식회사 다성분계 유전막 형성 방법 및 반도체장치 제조 방법
US9321854B2 (en) * 2013-10-29 2016-04-26 Exxonmobil Chemical Patents Inc. Aluminum alkyl with C5 cyclic and pendent olefin polymerization catalyst
KR20160124028A (ko) * 2015-04-16 2016-10-26 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 V 족-함유 필름 형성 조성물 및 v 족-함유 필름의 증착

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US10577385B2 (en) 2020-03-03
CN109689666A (zh) 2019-04-26
JP6803460B2 (ja) 2020-12-23
WO2018048124A1 (ko) 2018-03-15
US20190202847A1 (en) 2019-07-04
JP2019534245A (ja) 2019-11-28
KR101841444B1 (ko) 2018-03-23
TW201827445A (zh) 2018-08-01
TWI714802B (zh) 2021-01-01
KR20180028371A (ko) 2018-03-16

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Application publication date: 20190426

Assignee: Jiangsu Xianke semiconductor new materials Co.,Ltd.

Assignor: UP CHEMICAL Co.,Ltd.

Contract record no.: X2022990000316

Denomination of invention: Fifth main group metal compound, its preparation method, film deposition precursor composition containing it and film deposition method using it

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Record date: 20220621