CN109689666A - 第五主族金属化合物、其制备方法、包含其的膜沉积前体组合物及使用其的膜沉积方法 - Google Patents
第五主族金属化合物、其制备方法、包含其的膜沉积前体组合物及使用其的膜沉积方法 Download PDFInfo
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- CN109689666A CN109689666A CN201780055127.5A CN201780055127A CN109689666A CN 109689666 A CN109689666 A CN 109689666A CN 201780055127 A CN201780055127 A CN 201780055127A CN 109689666 A CN109689666 A CN 109689666A
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- C07—ORGANIC CHEMISTRY
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- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic System
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- C07F17/00—Metallocenes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR20160115708 | 2016-09-08 | ||
KR10-2016-0115708 | 2016-09-08 | ||
PCT/KR2017/009188 WO2018048124A1 (ko) | 2016-09-08 | 2017-08-23 | 5족 금속 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법 |
Publications (2)
Publication Number | Publication Date |
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CN109689666A true CN109689666A (zh) | 2019-04-26 |
CN109689666B CN109689666B (zh) | 2020-05-05 |
Family
ID=61561458
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201780055127.5A Active CN109689666B (zh) | 2016-09-08 | 2017-08-23 | 第五主族金属化合物、其制备方法、包含其的膜沉积前体组合物及使用其的膜沉积方法 |
Country Status (6)
Country | Link |
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US (1) | US10577385B2 (zh) |
JP (1) | JP6803460B2 (zh) |
KR (1) | KR101841444B1 (zh) |
CN (1) | CN109689666B (zh) |
TW (1) | TWI714802B (zh) |
WO (1) | WO2018048124A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102015276B1 (ko) * | 2018-02-08 | 2019-08-28 | 주식회사 메카로 | 유기금속화합물 및 이를 이용한 박막 |
JP2022535914A (ja) * | 2019-06-05 | 2022-08-10 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | 薄膜堆積のための新規のv族及びvi族遷移金属前駆体 |
KR20210041830A (ko) | 2019-10-08 | 2021-04-16 | 에스케이트리켐 주식회사 | 5족 금속 함유 박막 형성용 전구체 및 이를 이용한 5족 금속 함유 박막 형성 방법 및 상기 5족 금속 함유 박막을 포함하는 반도체 소자. |
KR20220053482A (ko) * | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리 |
KR102621779B1 (ko) * | 2021-08-31 | 2024-01-08 | 주식회사 이지티엠 | 박막 증착을 위한 니오비움 전구체 화합물 및 이를 이용한 니오비움 함유 박막의 형성 방법 |
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KR20100060481A (ko) * | 2008-11-27 | 2010-06-07 | 주식회사 유피케미칼 | 5족 금속 산화물 또는 질화물 박막 증착용 유기금속 전구체화합물 및 이를 이용한 박막 증착 방법 |
CN102112654A (zh) * | 2008-08-01 | 2011-06-29 | 乔治洛德方法研究和开发液化空气有限公司 | 在基质上形成含钽层的方法 |
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JP3766439B2 (ja) * | 1995-09-13 | 2006-04-12 | 三井化学株式会社 | 樹脂組成物の製造方法 |
JPH09194526A (ja) * | 1996-01-19 | 1997-07-29 | Ube Ind Ltd | 共役ジエン重合用触媒 |
US5981667A (en) * | 1996-11-12 | 1999-11-09 | Ube Industries, Ltd. | Impact-resistant polystyrene resin composition |
JPH10306116A (ja) * | 1997-05-07 | 1998-11-17 | Ube Ind Ltd | ブタジエン重合用触媒 |
SG96633A1 (en) * | 2000-07-04 | 2003-06-16 | Mitsui Chemicals Inc | Process for producing polar olefin copolymer and polar olefin copolymer obtained thereby |
WO2007135946A1 (ja) * | 2006-05-22 | 2007-11-29 | Ube Industries, Ltd. | ポリブタジエンの製造方法 |
US9956548B2 (en) * | 2011-12-12 | 2018-05-01 | Chevron Phillips Chemical Company Lp | Preparation of an olefin oligomerization catalyst |
KR20130078965A (ko) * | 2012-01-02 | 2013-07-10 | 에스케이하이닉스 주식회사 | 다성분계 유전막 형성 방법 및 반도체장치 제조 방법 |
US9321854B2 (en) * | 2013-10-29 | 2016-04-26 | Exxonmobil Chemical Patents Inc. | Aluminum alkyl with C5 cyclic and pendent olefin polymerization catalyst |
US20160307904A1 (en) * | 2015-04-16 | 2016-10-20 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Niobium-containing film forming compositions and vapor deposition of niobium-containing films |
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TWI714802B (zh) | 2021-01-01 |
US20190202847A1 (en) | 2019-07-04 |
CN109689666B (zh) | 2020-05-05 |
JP2019534245A (ja) | 2019-11-28 |
WO2018048124A1 (ko) | 2018-03-15 |
TW201827445A (zh) | 2018-08-01 |
KR20180028371A (ko) | 2018-03-16 |
US10577385B2 (en) | 2020-03-03 |
JP6803460B2 (ja) | 2020-12-23 |
KR101841444B1 (ko) | 2018-03-23 |
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