TWI713101B - 加工裝置 - Google Patents
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- TWI713101B TWI713101B TW106127551A TW106127551A TWI713101B TW I713101 B TWI713101 B TW I713101B TW 106127551 A TW106127551 A TW 106127551A TW 106127551 A TW106127551 A TW 106127551A TW I713101 B TWI713101 B TW I713101B
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- 238000004140 cleaning Methods 0.000 claims description 30
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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Abstract
[課題] 可以邊抑制水之消耗量,邊在使晶圓之上面濕潤之狀態下搬運。 [解決手段] 搬運機構(36)係搬運在晶圓之下面貼合面積大於晶圓(W1)的基板(W2)之板狀工件(W)。搬運機構具備覆蓋晶圓之上面的搬運墊(38),和保持較晶圓外周之基板的保持部(20),和對晶圓供給水之水供給源(81)。搬運機構係在搬運墊之下面和晶圓之上面之間形成特定間隙(D),在對該間隙供給特定量之水的狀態下搬運板狀工件。
Description
[0001] 本發明係關於具備搬運被加工物之搬運機構的加工裝置。
[0002] 例如,在研磨晶圓之研磨裝置中,提案有實施CMP(Chemical Mechanical Polishing)研磨。在如此之研磨裝置中,使用研磨磨粒和漿料而實施研磨。具體而言,使包含研磨磨粒之漿料固定在研磨墊和晶圓之間,藉由將該漿料以研磨墊推壓至晶圓,研磨晶圓之表面。 [0003] 研磨後之晶圓被搬運至洗淨手段。但是,在搬運途中,有晶圓之表面(被研磨面)乾燥,附著於晶圓之表面的漿料固化之虞。因固化的漿料難以藉由洗淨手段除去,晶圓之表面乾燥不太理想。 [0004] 於是,在以往,提案有一面對晶圓之表面供給水一面搬運之搬運機構(參照專利文獻1)。專利文獻1之搬運機構係邊緣夾緊式的搬運機構,在保持晶圓之期間,隨時對晶圓之表面供給水。依此,防止晶圓之乾燥。 [先前技術文獻] [專利文獻] [0005] [專利文獻1] 日本特許第5930196號公報
[發明所欲解決之課題] [0006] 但是,記載於專利文獻1之搬運機構,假設水從晶圓之表面溢出,持續不斷地對晶圓供給水。因此,有造成水之消耗量增加之問題。 [0007] 依此,本發明之目的係提供可以邊抑制水之消耗量,邊在使晶圓之表面濕潤之狀態進行搬運的加工裝置。 [用以解決課題之手段] [0008] 當藉由本發明時,提供一種加工裝置,具備:保持平台,其係使晶圓和面積較晶圓大的基板中心一致予以貼合,吸引保持在晶圓之外周外側具有該基板露出之露出部之板狀工件的該基板;和加工手段,其係加工被保持於該保持平台之板狀工件之晶圓上面;和洗淨手段,其係洗淨藉由該加工手段被加工的晶圓之被加工面;和搬運機構,其係將晶圓從該保持平台搬運至該洗淨手段,該搬運機構包含:保持部,其係保持該露出部;搬運墊,其具有以大於或等於的面積與在該保持部保持的板狀工件之晶圓上面面對面的下面;水供給手段,其係從該搬運墊之該下面供給水,在該保持部所保持之板狀工件之該上面和該搬運墊之該下面具備間隙,當在該間隙以該水供給手段供給水,而該間隙充滿水時,截斷從該水供給手段所供給之水,在該間隙充滿水之狀態下,將板狀工件從該保持平台搬運至該洗淨手段。 [0009] 若藉由該構成時,因搬運墊之下面具有大於或等於晶圓之上面之面積,故於搬運晶圓之時,藉由搬運墊之中心和晶圓之中心一致,晶圓之上面全體被晶圓墊覆蓋。而且,藉由從水供給手段供給水,在搬運墊之下面和晶圓之上面之間隙形成水的層。依此,晶圓之上面全體被水之層覆蓋。此時,因藉由搬運墊和晶圓之間的表面張力,在上述間隙內保持水之層,故無須持續供給水。即是,可以以特定量之水維持晶圓之上面之濕潤狀態。依此,可以邊抑制水之消耗量,邊在使晶圓之上面濕潤之狀態下搬運。 [發明效果] [0010] 依此,可以邊抑制水之消耗量,邊在使晶圓之上面濕潤之狀態下搬運。
[0012] 以下,參照附件圖面針對與本實施型態有關之CMP研磨裝置進行說明。圖1為與本實施型態有關之CMP研磨裝置之斜視圖。另外,與本實施型態有關之CMP研磨裝置如圖1所示般,並不限定於研磨加工專用之裝置構成,即使例如被組裝在全自動實施研削加工、研磨加工、洗淨等之一連串動作的全自動型之加工裝置亦可。再者,在本實施型態中,雖然針對使用CMP研磨裝置作為加工裝置之情況進行說明,但是並不限定於此,加工裝置即使為例如研削裝置亦可。 [0013] 如圖1所示般,CMP研磨裝置1被構成全自動對板狀工件W實施由搬入處理、研磨處理、洗淨處理、搬出處理所構成之一連串的作業。板狀工件W被形成略圓板狀,在被收容在卡匣C之狀態下,被搬入至CMP研磨裝置1。 [0014] 另外,板狀工件W係由使晶圓W1與面積大於晶圓W1之基板W2的上面各中心一致而予以貼合的貼合工件所構成。因此,在晶圓W1之外周外側形成基板W2露出的露出部Wa。另外,晶圓W1即使在半導體基板上形成IC、LSI等之半導體裝置的半導體晶圓亦可,即使為在無機材料基板上形成LED等之光裝置之光裝置晶圓亦可。再者,晶圓W1除此之外即使為裝置形成後之半導體基板或無機材料基板亦可。 [0015] 在CMP研磨裝置1之基台11之前側,載置收容複數板狀工件W之一對卡匣C。在一對卡匣C之後方,設置對卡匣C取出放入之卡匣機器人16。在卡匣機器人16之兩斜後方,設置有定位加工前板狀工件W之定位機構21,和洗淨加工完成之板狀工件W之洗淨手段26。在定位機構21和洗淨手段26之間,設置有將加工前之板狀工件W搬入至保持平台41之搬運機構31,和從保持平台41搬出加工完成之板狀工件W之搬運機構36(相當於與本發明有關之搬運機構)。 [0016] 卡匣機器人16係在由多結連桿所構成之機器臂17之前端設置手部18而構成。在卡匣機器人16中,除加工前之板狀工件W從卡匣C被搬運至定位機構21之外,加工完成之板狀工件W從洗淨手段26被搬運至卡匣C。 [0017] 定位機構21係在暫置平台22之周圍,配置可對暫置平台22之中心進退的複數定位銷23而構成。在定位機構21中,藉由複數定位銷23抵接於被載置於暫置平台22上之板狀工件W之外周緣,板狀工件W之中心被定位在暫置平台22之中心。 [0018] 在搬運機構31中,板狀工件W藉由搬運墊33從暫置平台22被抬起,搬運墊33藉由搬運臂32旋轉,依此板狀工件W被搬入至保持平台41。在搬運機構36中,板狀工件W藉由搬運墊38從保持平台41被抬起,搬運墊38藉由搬運臂37旋轉,依此板狀工件W從保持平台41被搬出。被搬出之板狀工件W被搬運至洗淨手段26。 [0019] 洗淨手段26係朝向旋轉平台27噴射洗淨水及乾燥氣體之各種噴嘴(無圖示)而構成。在洗淨手段26中,保持板狀工件W之旋轉平台27在基台11內下降,在基台11內,噴射洗淨水而板狀工件W(晶圓W1之被加工面)被旋轉洗淨之後,噴吹乾燥氣體而使板狀工件W乾燥。 [0020] 在搬運機構31及搬運機構36之後方,設置有轉台40。轉台40之搬運機構31及搬運機構36側構成搬運板狀工件W之搬運區域。另外,轉台之後側(後述加工手段51側)構成研磨加工板狀工件W的加工區域。 [0021] 在轉台40之上面,在圓周方向以等間隔地設置一對保持平台41。轉台40成為藉由無圖示之旋轉手段能夠自轉。每次轉台40半旋轉,被保持於保持平台41之板狀工件W被交互地定位在搬運區域及加工區域。 [0022] 保持平台41係以轉台40之旋轉軸為中心按均等角度配置。在各保持平台41之下方設置有使保持平台旋轉之旋轉手段(無圖示)。在各保持平台41之上面,形成保持板狀工件W(基板W2)之下面的保持面42。在保持平台41之周圍,形成環狀之周壁43,在周壁43之內側,於保持平台41之旁邊形成有與氣體供給供給源(無圖示)之噴出口44。在該周壁43之內側,於研磨加工中,從保持平台41流下之漿料滯留,從噴出口44噴出氣體,依此漿料被供給至研磨墊53而被再利用。 [0023] 再者,在轉台40之後側,豎立設置柱體12。在柱體12設置使加工手段51在Z軸方向加工進給之加工進給手段61。加工進給手段61具有被配置在柱體12之前面的與Z軸方向平行之一對的導軌62,和以能夠滑動之方式被設置在一對導軌62之馬達驅動之Z軸平台63。 [0024] 在Z軸平台63之前面,隔著殼體64支撐加工手段51。在Z軸平台63之背面側,形成螺帽部(無圖示),在該螺帽部,螺合滾珠螺桿(無圖示),在滾珠螺桿(無圖示)之一端,連結有驅動馬達66。滾珠螺桿(無圖示)藉由驅動馬達66被旋轉驅動,加工手段51沿著導軌62在Z軸方向移動。 [0025] 加工手段51係對被保持於保持平台41之板狀工件W(晶圓W1之上面)進行研磨加工。加工手段51係隔著殼體64被安裝在Z軸平台63之前面,在轉軸54之下部設置研磨墊53而構成。在轉軸54設置凸緣55,隔著凸緣55在殼體64支持加工手段51。在轉軸54之下部安裝有被裝設研磨墊53的壓板52。在研磨墊53之研磨面,形成有固定漿料之多數孔。 [0026] 再者,在轉軸54之上部,在板狀工件W之上面和研磨墊53之研磨面之間連接有供給漿料之漿料供給源(無圖示)。藉由漿料從漿料供給源被供給,漿料通過轉軸54內之流路被固定在研磨面。漿料係包含磨粒之鹼性水溶液或酸性水溶液,例如,綠碳化矽、金剛石、氧化鋁、氧化鈰、CBN(立方晶氮化硼)之磨粒。 [0027] 在CMP研磨裝置1設置有統籌控制裝置各部之控制手段90。控制手段90藉由實施各種處理之微處理器或記憶體等而被構成。記憶體係因應用途而以ROM(Read Only Memory)、RAM(Random Access Memory)等之一個或複數之記憶媒體所構成。 [0028] 在如此之CMP研磨裝置1中,板狀工件W從卡匣C內被搬運至定位機構21,板狀工件W藉由定位機構21被定心。接著,板狀工件W被搬入至保持平台41上,藉由轉台40之旋轉,被保持在保持平台41之板狀工件W被定位在CMP研磨位置。在CMP研磨位置中,板狀工件W藉由加工手段51被研磨加工。而且,板狀工件W藉由洗淨手段26被洗淨,板狀工件W從洗淨手段26被搬出至卡匣C。 [0029] 然而,在以往之研磨裝置中,研磨加工後之晶圓藉由上述般之旋轉式之洗淨手段被洗淨。具體而言,洗淨手段係使吸引保持晶圓之旋轉平台高速旋轉,對晶圓噴射洗淨水而予以洗淨。在該種類的洗淨手段中,利用洗淨水藉由離心力向外側噴吹之力,沖洗晶圓之上面的污垢(研磨屑或漿料等)。 [0030] 但是,即使利用離心力噴吹晶圓之上面的污垢,也有在晶圓之外周部分殘留漿料之虞,並一定能取得充分的洗淨效果。 [0031] 殘留在晶圓之外周部分的漿料等之污垢,當乾燥時產生固化,即使再次以水使濕潤亦難以除去。不僅如此,藉由在之後的工程漿料混入至裝置內,也有產生無法預期的不佳情況。因此,提案有在研磨加工晶圓之後,在搬運晶圓至洗淨手段之期間,隨時供給水以使晶圓之上面不會乾燥之搬運機構。但是,由於隨時供給水,有浪費使用水之問題。 [0032] 再者,近年來,要求晶圓之更加薄化,有以蠟黏接基板,以取代在晶圓之下面黏接保護膠帶之情形。此係在如SiC基板或藍寶石基板般,需要更大的按壓荷重(例如,研銷荷重)之晶圓之加工中,以防止因保護膠帶之下沉或晶圓之側滑所致的誤差之目的而研究出。 [0033] 於是,本發明者根據上述課題,構思邊抑制水之消耗量,邊在使晶圓之表面濕潤之狀態下搬運。 [0034] 具體而言,在本實施型態中,設為於搬運晶圓W1之時,以覆蓋晶圓W1之上面全體之方式,使搬運墊38(參照圖2)與晶圓W1面對面,對被形成在搬運墊38之下面和晶圓之上面之間的間隙供給特定量之水的構成。被供給至間隙之水(水之層)因藉由表面張力被保持在間隙內,故僅以供給特定量之水,能夠抑制晶圓W1之上面的乾燥。如此一來,能夠邊節約水,邊在使晶圓W1之上面濕潤之狀態下搬運。 [0035] 接著,參照圖2,針對與本實施型態有關之搬運機構之詳細構成予以說明。圖2為表示本實施型態所涉及之搬運機構之示意圖。另外,在本實施型態中,雖然針對搬運在晶圓之下面貼合基板的板狀工件之情況予以說明,但是搬運對象並不限定於此。 [0036] 如圖2所示般,與本實施型態有關之搬運機構36係從保持平台41搬出研磨加工完成之板狀工件W而搬運至洗淨手段26(參照圖1)。 [0037] 保持平台41係吸引保持板狀工件W之下面。具體而言,在保持平台41之表面,形成藉由多孔陶瓷等之多孔質構件,吸引保持基板W2之保持面42。保持面42具有僅小於基板W2之外徑的外徑。在保持平台41形成與保持面42連通之連通孔41a。在該連通孔41a經閥70連接吸引源71,同時經閥72連接於氣體供給源73。另外,在以保持平台41保持板狀工件W之期間,閥70被開始,另外閥72被關閉。 [0038] 搬運機構36係具有經軸部36a被支撐於能夠旋轉之搬運臂37(參照圖1)之前端的搬運墊38。搬運墊38被形成以軸部36a為中心的概略圓板形狀,以全體而言具有僅大於板狀工件W之外徑的外徑。在搬運墊38,於下面側,形成有僅小於全體外徑之圓形的突出部38a。 [0039] 詳細於後述,突出部38a之下面,具有與晶圓W1之上面面對面之時,與晶圓W1略相同或大於或者等於的面積。在圖2中,雖然表示突出部38a之外徑僅大於晶圓W1之面積的情況,但是突出部38a之外徑即使與晶圓W1之外徑相同亦可。在搬運墊38及軸部36a之中心形成貫通孔38b。在該貫通孔38b,經閥80連接有水供給源81。 [0040] 再者,在較搬運墊38之突出部38a外周部分,設置有保持板狀工件W之露出部Wa的保持部82。保持部82係在圓周方向以均等間隔設置複數個(例如,3個)(在圖2中僅圖示兩個)。保持部82包含在搬運墊38之外周附近垂直方向貫通之軸部83,和被設置在軸部83之下端的吸附部84,和被設置在軸部83之上端的止動部85而構成。 [0041] 吸附部84具有朝下方擴徑的圓錐台形狀,例如以橡膠等之彈性體所構成。止動部85具有直徑較軸部83大的圓板形狀,發揮防止軸部83及吸附部84之脫落的作用。在保持部82形成與吸附部84連通之連通部(無圖示),在該連通路經閥86連接有吸引源87。 [0042] 再者,保持部82被構成能夠在軸方向升降。詳細於後述,藉由控制手段90(參照圖1)控制吸附部84對搬運墊38的高度,使以特定高度保持板狀工件W。再者,作為搬運機構36全體,亦被構成藉由無圖示之升降機構能升降。 [0043] 接著,參照圖3至圖5,針對與本實施型態有關之搬運機構之搬運工程予以說明。圖3為與本實施型態有關之搬運機構之保持工程之一例的圖示。圖4為與本實施型態有關之搬運機構之水供給工程之一例的圖示。圖4A表示水供給供給工程之全體示意圖,圖4B表示圖4A之晶圓附近之部分放大圖。圖5為與本實施型態有關之搬運機構之間隔工程之一例的圖示。 [0044] 與本實施型態有關之搬運工程係經由以搬運機構36吸引保持板狀工件W之保持工程(參照圖3)、對晶圓W1之上面供給水之水供給工程(參照圖4)、從保持平台41使板狀工件W間隔開之間隔工程(參照圖5)而被實施。 [0045] 如圖3所示般,在保持工程中,藉由搬運機構36吸引保持板狀工件W。搬運機構36係使搬運臂37(參照圖1)旋轉,而使保持平台41上之板狀工件W之中心和搬運墊38之中心一致。而且,搬運機構36係藉由無圖示之升降機構而下降,被定位在能夠保持板狀工件W之高度。依此,板狀工件W之上面藉由搬運墊38被覆蓋。 [0046] 具體而言,搬運機構36係於吸附部84之下端抵接於露出部Wa之上面之後,被定位在突出部38a之下面和晶圓W1之上面之間隙成為特定間隙D之高度。此時,保持部82對搬運墊38做相對性上升。如上述般,吸附部84對搬運墊38之高度藉由控制手段90(參照圖1)被控制成形成特定間隙D。當形成特定間隙D時,閥86被開啟,在吸附部84產生負壓。依此,露出部Wa藉由吸附部84被吸引保持。 [0047] 如圖4所示般,在水供給工程中,晶圓W1之上面被供給水。具體而言,如圖4A所示般,閥80被開啟,水從水供給源81通過連通孔41a被供給至搬運墊38。水從突出部38a之下面被供給至突出部38a和板狀工件W之間隙D。水順著該間隙D朝向晶圓W1之外周流入。其結果,間隙D藉由水被填滿。即是,在突出部38a之下面和晶圓W1之間形成水之層,晶圓W1之上面全體藉由水被覆蓋。 [0048] 更具體而言,如圖4B所示般,被保持成藉由突出部38a和板狀工件W之間之表面張力,水從突出部38a之外緣部僅在徑向外側膨脹。即是,晶圓W1之外周部分(側面)也成為被水覆蓋之狀態。當間隙D藉由水被填滿時,閥80被關閉,截斷來自水供給源81之水供給。如此一來,在本實施型態中,藉由將特定間隙D設定成可以藉由表面張力在突出部38a和晶圓W1之間保持水之層,無須供給過度的水,可以取得省水效果。 [0049] 如圖5所示般,在間隔工程中,板狀工件W從保持平台41間隔開。具體而言,閥70被關閉,同時閥72被開啟,板狀工件W從保持平台41浮起(間隔開)。搬運機構36在維持圖4所示之特定間隙D及水之層之狀態下上升。此時,保持部82對搬運墊38之高度在圖4之狀態下被保持(固定)。而且,搬運機構36係使搬運臂37旋轉而將板狀工件W搬運至洗淨手段26(皆參照圖1)。在搬運中,晶圓W全體(間隙D)被水覆蓋(被填滿),故不會乾燥。 [0050] 如上述般,若藉由本實施型態,因搬運墊38之下面具有大於或等於晶圓W1之上面之面積,故於搬運板狀工件W之時,藉由搬運墊38之中心和晶圓W1之中心一致,晶圓W1之上面全體被晶圓墊38覆蓋。而且,藉由從水供給源81供給水,在搬運墊38之下面和晶圓W1之上面之間隙D形成水的層。此時,因藉由搬運墊38和晶圓W1之間的表面張力,在上述間隙D內保持水之層,故無須持續供給水。即是,可以以特定量之水維持晶圓W1之上面之濕潤狀態。依此,可以邊抑制水之消耗量,邊在使晶圓W1之上面濕潤之狀態下搬運。 [0051] 在上述實施型態中,雖然設為搬運貼合晶圓W1和基板W2之板狀工件W之構成,但是並不限定於此。成為搬運對象之板狀工件能夠適當變更。 [0052] 在上述實施型態中,雖然設為晶圓W1之側面也被水覆蓋之構成,但是並不限定於此。晶圓W1之側面不一定被水覆蓋亦可。 [0053] 再者,本發明之實施型態並不限定於上述各實施型態,即使在不脫離本發明之技術性思想之主旨的範圍,被變更、置換、變形亦可而且,若藉由技術之進步或衍生的另外技術,可以以另外之方式實現本發明之技術性思想,即使使用其方法來實施亦可。因此,申請專利範圍涵蓋本發明之技術性思想之範圍內所含之所有實施態樣。 [0054] 在本實施型態中,雖然將本發明設為在CMP研磨裝置1中搬運板狀工件W之構成,但是並不限定於此。若為將板狀工件W欲在濕潤狀態下搬運的加工裝置時,即使為任何的加工裝置亦可。 [0055] 如上述說明般,本發明具有像邊抑制水之消耗量,邊可以在使晶圓之表面濕潤之狀態下搬運這樣的效果,尤其對具備搬運貼合基板之晶圓的搬運機構有效用。
[0056]W1‧‧‧晶圓W2‧‧‧基板Wa‧‧‧露出部W‧‧‧板狀工件D‧‧‧間隙1‧‧‧CMP研磨裝置(加工裝置)26‧‧‧洗淨手段36‧‧‧搬運機構38‧‧‧搬運墊41‧‧‧保持平台51‧‧‧加工手段81‧‧‧水供給源(水供給手段)82‧‧‧保持部
[0011] 圖1為與本實施型態有關之CMP研磨裝置之斜視圖。 圖2為與本實施型態有關之搬運機構之示意性剖面圖。 圖3為與本實施型態有關之搬運機構之保持工程之一例的示意性剖面圖。 圖4為與本實施型態有關之搬運機構之水供給工程之一例的示意性剖面圖。 圖5為與本實施型態有關之搬運機構之間隔工程之一例的示意性剖面圖。
36‧‧‧搬運機構
36a‧‧‧軸部
38‧‧‧搬運墊
38a‧‧‧突出部
38b‧‧‧貫通孔
41‧‧‧保持平台
41a‧‧‧連通孔
42‧‧‧保持面
70‧‧‧閥
71‧‧‧吸引源
72‧‧‧閥
73‧‧‧氣體供給源
80‧‧‧閥
81‧‧‧水供給源(水供給手段)
82‧‧‧保持部
83‧‧‧軸部
84‧‧‧吸附部
85‧‧‧止動部
86‧‧‧閥
87‧‧‧吸引源
W‧‧‧板狀工件
W1‧‧‧晶圓
W2‧‧‧基板
Wa‧‧‧露出部
D‧‧‧間隙
Claims (1)
- 一種加工裝置,具備: 保持平台,其係使晶圓和面積較晶圓大的基板中心一致予以貼合,吸引保持在晶圓之外周外側具有該基板露出之露出部之板狀工件的該基板;和加工手段,其係加工被保持於該保持平台之板狀工件之晶圓上面;和洗淨手段,其係洗淨藉由該加工手段被加工的晶圓之被加工面;和搬運機構,其係將晶圓從該保持平台搬運至該洗淨手段, 該搬運機構包含:保持部,其係保持該露出部;搬運墊,其具有以大於或等於的面積與在該保持部保持的板狀工件之晶圓上面面對面的下面;水供給手段,其係從該搬運墊之該下面供給水, 在該保持部所保持之板狀工件之該上面和該搬運墊之該下面具備間隙,當在該間隙以該水供給手段供給水,而該間隙充滿水時,截斷從該水供給手段所供給之水,在該間隙充滿水之狀態下,將板狀工件從該保持平台搬運至該洗淨手段。
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