TWI712106B - 用於製作包含中介層之半導體結構之方法 - Google Patents

用於製作包含中介層之半導體結構之方法 Download PDF

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Publication number
TWI712106B
TWI712106B TW106117418A TW106117418A TWI712106B TW I712106 B TWI712106 B TW I712106B TW 106117418 A TW106117418 A TW 106117418A TW 106117418 A TW106117418 A TW 106117418A TW I712106 B TWI712106 B TW I712106B
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Taiwan
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temporary support
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semiconductor
contact pads
item
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TW106117418A
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Chinese (zh)
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TW201742189A (zh
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璧顏 阮
魯多維克 伊卡諾
那地雅 班穆罕默德
克里斯多夫 馬勒維
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法商索泰克公司
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    • H10W74/019—
    • H10P54/00—
    • H10P72/74—
    • H10P90/1906—
    • H10W10/181—
    • H10W70/05—
    • H10W70/611—
    • H10W70/685—
    • H10W74/014—
    • H10W74/114—
    • H10P30/204—
    • H10P30/208—
    • H10P72/7412—
    • H10P72/7426—
    • H10P72/743—
    • H10P72/7438—
    • H10P72/744—
    • H10W70/60—
    • H10W70/66—
    • H10W72/01255—
    • H10W72/01257—
    • H10W72/0198—
    • H10W72/072—
    • H10W72/07207—
    • H10W72/07307—
    • H10W72/07337—
    • H10W72/241—
    • H10W72/244—
    • H10W72/344—
    • H10W72/922—
    • H10W80/211—
    • H10W80/301—
    • H10W90/00—
    • H10W90/722—
    • H10W90/724—
    • H10W90/732—
    • H10W90/792—
    • H10W90/794—
    • H10W99/00—

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Ceramic Engineering (AREA)
  • Wire Bonding (AREA)
TW106117418A 2016-05-30 2017-05-25 用於製作包含中介層之半導體結構之方法 TWI712106B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1654831 2016-05-30
FR1654831A FR3051971B1 (fr) 2016-05-30 2016-05-30 Procede de fabrication d'une structure semi-conductrice comprenant un interposeur

Publications (2)

Publication Number Publication Date
TW201742189A TW201742189A (zh) 2017-12-01
TWI712106B true TWI712106B (zh) 2020-12-01

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Family Applications (1)

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TW106117418A TWI712106B (zh) 2016-05-30 2017-05-25 用於製作包含中介層之半導體結構之方法

Country Status (8)

Country Link
US (1) US11114314B2 (enExample)
KR (1) KR102397140B1 (enExample)
CN (1) CN109196627B (enExample)
DE (1) DE112017002718T5 (enExample)
FR (1) FR3051971B1 (enExample)
SG (2) SG10201913072VA (enExample)
TW (1) TWI712106B (enExample)
WO (1) WO2017207390A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202038266A (zh) * 2018-11-26 2020-10-16 瑞典商斯莫勒科技公司 具有離散的能量儲存構件之半導體組件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100109169A1 (en) * 2008-04-29 2010-05-06 United Test And Assembly Center Ltd Semiconductor package and method of making the same
US20130214423A1 (en) * 2011-03-31 2013-08-22 Soitec Methods for fabrication of semiconductor structures including interposers with conductive vias, and related structures and devices
US20140339706A1 (en) * 2013-05-17 2014-11-20 Nvidia Corporation Integrated circuit package with an interposer formed from a reusable carrier substrate

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
KR100484962B1 (ko) 1996-07-12 2005-04-25 후지쯔 가부시끼가이샤 반도체 장치의 제조 방법 및 반도체 장치
JP3809733B2 (ja) * 1998-02-25 2006-08-16 セイコーエプソン株式会社 薄膜トランジスタの剥離方法
JP2001102523A (ja) * 1999-09-28 2001-04-13 Sony Corp 薄膜デバイスおよびその製造方法
FR2809867B1 (fr) * 2000-05-30 2003-10-24 Commissariat Energie Atomique Substrat fragilise et procede de fabrication d'un tel substrat
US6794273B2 (en) * 2002-05-24 2004-09-21 Fujitsu Limited Semiconductor device and manufacturing method thereof
JP4651924B2 (ja) * 2003-09-18 2011-03-16 シャープ株式会社 薄膜半導体装置および薄膜半導体装置の製造方法
FR2898430B1 (fr) * 2006-03-13 2008-06-06 Soitec Silicon On Insulator Procede de realisation d'une structure comprenant au moins une couche mince en materiau amorphe obtenue par epitaxie sur un substrat support et structure obtenue suivant ledit procede
FR2928031B1 (fr) * 2008-02-25 2010-06-11 Soitec Silicon On Insulator Procede de transfert d'une couche mince sur un substrat support.
FR2936357B1 (fr) * 2008-09-24 2010-12-10 Commissariat Energie Atomique Procede de report de puces sur un substrat.
US8728863B2 (en) * 2011-08-09 2014-05-20 Soitec Methods of forming bonded semiconductor structures including interconnect layers having one or more of electrical, optical, and fluidic interconnects therein, and bonded semiconductor structures formed using such methods
WO2013095544A1 (en) 2011-12-22 2013-06-27 Intel Corporation 3d integrated circuit package with window interposer
US8685761B2 (en) * 2012-02-02 2014-04-01 Harris Corporation Method for making a redistributed electronic device using a transferrable redistribution layer
TWI517274B (zh) * 2012-03-21 2016-01-11 矽品精密工業股份有限公司 晶圓級半導體封裝件之製法及其晶圓級封裝基板之製法
US8963285B2 (en) * 2013-03-08 2015-02-24 Infineon Technologies Ag Semiconductor device and method of manufacturing thereof
US9209142B1 (en) * 2014-09-05 2015-12-08 Skorpios Technologies, Inc. Semiconductor bonding with compliant resin and utilizing hydrogen implantation for transfer-wafer removal

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100109169A1 (en) * 2008-04-29 2010-05-06 United Test And Assembly Center Ltd Semiconductor package and method of making the same
US20130214423A1 (en) * 2011-03-31 2013-08-22 Soitec Methods for fabrication of semiconductor structures including interposers with conductive vias, and related structures and devices
US20140339706A1 (en) * 2013-05-17 2014-11-20 Nvidia Corporation Integrated circuit package with an interposer formed from a reusable carrier substrate

Also Published As

Publication number Publication date
US11114314B2 (en) 2021-09-07
FR3051971A1 (enExample) 2017-12-01
KR20190015707A (ko) 2019-02-14
US20200328094A1 (en) 2020-10-15
TW201742189A (zh) 2017-12-01
SG11201810104VA (en) 2018-12-28
CN109196627B (zh) 2023-08-08
WO2017207390A1 (en) 2017-12-07
CN109196627A (zh) 2019-01-11
SG10201913072VA (en) 2020-03-30
FR3051971B1 (fr) 2019-12-13
KR102397140B1 (ko) 2022-05-16
DE112017002718T5 (de) 2019-02-28

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