TWI692024B - 濕式蝕刻裝置 - Google Patents
濕式蝕刻裝置 Download PDFInfo
- Publication number
- TWI692024B TWI692024B TW106106835A TW106106835A TWI692024B TW I692024 B TWI692024 B TW I692024B TW 106106835 A TW106106835 A TW 106106835A TW 106106835 A TW106106835 A TW 106106835A TW I692024 B TWI692024 B TW I692024B
- Authority
- TW
- Taiwan
- Prior art keywords
- phosphoric acid
- aqueous solution
- acid aqueous
- section
- concentration
- Prior art date
Links
Images
Classifications
-
- H10P72/0402—
-
- H10P50/642—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H10P50/644—
-
- H10P50/667—
-
- H10P72/0414—
-
- H10P72/0422—
-
- H10P72/0424—
-
- H10P72/0431—
-
- H10P72/0602—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013073721 | 2013-03-29 | ||
| JP2013-073721 | 2013-03-29 | ||
| JP2014045275A JP6302708B2 (ja) | 2013-03-29 | 2014-03-07 | ウェットエッチング装置 |
| JP2014-045275 | 2014-03-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201724250A TW201724250A (zh) | 2017-07-01 |
| TWI692024B true TWI692024B (zh) | 2020-04-21 |
Family
ID=51599576
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106106835A TWI692024B (zh) | 2013-03-29 | 2014-03-21 | 濕式蝕刻裝置 |
| TW109109663A TWI739355B (zh) | 2013-03-29 | 2014-03-21 | 濕式蝕刻裝置 |
| TW110118487A TWI810572B (zh) | 2013-03-29 | 2014-03-21 | 濕式蝕刻裝置 |
| TW103110681A TWI660419B (zh) | 2013-03-29 | 2014-03-21 | 濕式蝕刻裝置 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109109663A TWI739355B (zh) | 2013-03-29 | 2014-03-21 | 濕式蝕刻裝置 |
| TW110118487A TWI810572B (zh) | 2013-03-29 | 2014-03-21 | 濕式蝕刻裝置 |
| TW103110681A TWI660419B (zh) | 2013-03-29 | 2014-03-21 | 濕式蝕刻裝置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20140290859A1 (enExample) |
| JP (1) | JP6302708B2 (enExample) |
| KR (4) | KR101596119B1 (enExample) |
| CN (2) | CN104078391B (enExample) |
| TW (4) | TWI692024B (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10443127B2 (en) * | 2013-11-05 | 2019-10-15 | Taiwan Semiconductor Manufacturing Company Limited | System and method for supplying a precursor for an atomic layer deposition (ALD) process |
| TWI630652B (zh) * | 2014-03-17 | 2018-07-21 | SCREEN Holdings Co., Ltd. | 基板處理裝置及使用基板處理裝置之基板處理方法 |
| US10964559B2 (en) * | 2014-06-30 | 2021-03-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer etching apparatus and method for controlling etch bath of wafer |
| KR101671118B1 (ko) * | 2014-07-29 | 2016-10-31 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 및 기판 처리 방법 |
| US10780461B2 (en) | 2015-05-15 | 2020-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd | Methods for processing substrate in semiconductor fabrication |
| CN105065914A (zh) * | 2015-07-21 | 2015-11-18 | 武汉新芯集成电路制造有限公司 | 一种湿法刻蚀工艺中刻蚀液输送管路系统及输送方法 |
| US10147619B2 (en) | 2015-08-27 | 2018-12-04 | Toshiba Memory Corporation | Substrate treatment apparatus, substrate treatment method, and etchant |
| KR101962080B1 (ko) * | 2015-09-30 | 2019-03-25 | 시바우라 메카트로닉스 가부시끼가이샤 | 기판 처리 장치 및 기판 처리 방법 |
| JP6903446B2 (ja) * | 2016-03-07 | 2021-07-14 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
| CN107275247A (zh) * | 2016-04-07 | 2017-10-20 | 盟立自动化股份有限公司 | 具有气体循环装置的湿法工艺设备 |
| CN107316825A (zh) * | 2016-04-27 | 2017-11-03 | 盟立自动化股份有限公司 | 湿式蚀刻装置 |
| CN107665839B (zh) * | 2016-07-29 | 2021-08-10 | 芝浦机械电子装置股份有限公司 | 处理液生成装置和使用该处理液生成装置的基板处理装置 |
| JP6940232B2 (ja) * | 2016-09-23 | 2021-09-22 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
| JP6909620B2 (ja) * | 2017-04-20 | 2021-07-28 | 株式会社Screenホールディングス | 基板処理方法 |
| JP6776208B2 (ja) * | 2017-09-28 | 2020-10-28 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
| KR102495512B1 (ko) * | 2017-12-26 | 2023-02-06 | 솔브레인 주식회사 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
| CN109192680B (zh) * | 2018-08-27 | 2020-12-11 | 长江存储科技有限责任公司 | 化学液槽装置 |
| JP7096112B2 (ja) * | 2018-09-13 | 2022-07-05 | キオクシア株式会社 | 半導体製造装置および半導体装置の製造方法 |
| JP7158249B2 (ja) * | 2018-11-09 | 2022-10-21 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および記憶媒体 |
| KR102759372B1 (ko) * | 2019-01-08 | 2025-01-24 | 삼성전자주식회사 | 실리콘 질화물용 식각제 조성물 및 반도체 소자의 제조 방법 |
| SG11202109069WA (en) * | 2019-02-20 | 2021-09-29 | Weimin Li | Need for si3n4 selective removal by wet chemistry |
| JP6843173B2 (ja) * | 2019-03-29 | 2021-03-17 | 東京エレクトロン株式会社 | 基板処理装置、および基板処理方法 |
| KR102822643B1 (ko) * | 2019-07-25 | 2025-06-18 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 및 기판 처리 방법 |
| JP7412134B2 (ja) * | 2019-11-01 | 2024-01-12 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
| JP7516742B2 (ja) * | 2019-11-05 | 2024-07-17 | 東京エレクトロン株式会社 | 基板を処理する装置、処理ガスを濃縮する装置、及び基板を処理する方法 |
| CN110993614B (zh) * | 2019-11-27 | 2022-06-10 | 深圳市华星光电半导体显示技术有限公司 | 显示面板制备装置及方法 |
| CN111106041A (zh) * | 2019-12-10 | 2020-05-05 | 上海华力集成电路制造有限公司 | 湿法刻蚀机台及湿法刻蚀药液的回收方法 |
| TW202134174A (zh) * | 2020-02-12 | 2021-09-16 | 日商東京威力科創股份有限公司 | 磷酸處理液的再生裝置、基板處理裝置、磷酸處理液的再生方法及基板處理方法 |
| JP7504636B2 (ja) * | 2020-03-24 | 2024-06-24 | 芝浦メカトロニクス株式会社 | 処理液製造装置、基板処理装置、処理液製造方法及び基板処理方法 |
| CN114195245A (zh) * | 2020-09-02 | 2022-03-18 | 中国科学院微电子研究所 | 腐蚀液回收再利用装置及方法 |
| KR102670179B1 (ko) * | 2020-09-09 | 2024-05-28 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 방법, 및 기판 처리 장치 |
| KR102715366B1 (ko) * | 2020-12-18 | 2024-10-10 | 세메스 주식회사 | 처리액 공급 장치 및 처리액 공급 방법 |
| KR102583556B1 (ko) * | 2021-01-07 | 2023-10-10 | 세메스 주식회사 | 처리액 공급 장치 및 처리액 공급 장치의 고형 제거 방법 |
| JP7588517B2 (ja) * | 2021-01-29 | 2024-11-22 | 株式会社Screenホールディングス | 基板処理装置、および、基板処理方法 |
| JP7438171B2 (ja) * | 2021-09-13 | 2024-02-26 | 芝浦メカトロニクス株式会社 | 供給タンク、供給装置、供給システム |
| CN114657376B (zh) * | 2022-05-10 | 2024-06-18 | 江苏和达电子科技有限公司 | 一种用于显示制程蚀刻废液的回收系统及方法 |
| CN117716481B (zh) * | 2022-08-08 | 2024-09-20 | 株式会社荏原制作所 | 预湿模块 |
| US20250096010A1 (en) * | 2023-09-15 | 2025-03-20 | Kla Corporation | Method to perform in-situ vacuum contamination measurement and identification in arbitrarily large chambers |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010037993A1 (en) * | 1997-09-22 | 2001-11-08 | Katsuo Iwasaki | Etching method and wiring board manufactured by the method |
| CN1971843A (zh) * | 2005-11-24 | 2007-05-30 | 东京毅力科创株式会社 | 基板处理方法以及基板处理装置 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2198810A (en) * | 1986-12-19 | 1988-06-22 | Philips Electronic Associated | Apparatus suitable for processing semiconductor slices |
| JPH09275091A (ja) * | 1996-04-03 | 1997-10-21 | Mitsubishi Electric Corp | 半導体窒化膜エッチング装置 |
| JPH1110540A (ja) * | 1997-06-23 | 1999-01-19 | Speedfam Co Ltd | Cmp装置のスラリリサイクルシステム及びその方法 |
| US6016728A (en) * | 1998-05-06 | 2000-01-25 | Bohl; Russell D. | Compact multi-purpose hand tool |
| JP3817093B2 (ja) * | 1998-07-07 | 2006-08-30 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
| KR20010027004A (ko) * | 1999-09-10 | 2001-04-06 | 윤종용 | 케미컬 농도조절 시스템 |
| KR20010086495A (ko) * | 2000-03-02 | 2001-09-13 | 윤종용 | 인산용액내의 규산염 농도 계측을 이용한 습식식각장치 |
| JP2002336761A (ja) | 2001-05-21 | 2002-11-26 | Dainippon Screen Mfg Co Ltd | 基板回転式処理装置 |
| US6743267B2 (en) * | 2001-10-15 | 2004-06-01 | Dupont Air Products Nanomaterials Llc | Gel-free colloidal abrasive polishing compositions and associated methods |
| EP1306886B1 (en) * | 2001-10-18 | 2008-07-30 | Infineon Technologies AG | Apparatus for assessing the silicon dioxide content |
| JP2003185537A (ja) * | 2001-12-20 | 2003-07-03 | Fujitsu Ltd | 薬液の特性測定装置、薬液供給装置及び薬液の濃度測定方法 |
| JP3842657B2 (ja) * | 2002-01-29 | 2006-11-08 | 株式会社ケミカルアートテクノロジー | ウエットエッチングシステム |
| JP4062419B2 (ja) * | 2002-05-21 | 2008-03-19 | セイコーエプソン株式会社 | 処理装置および半導体装置の製造方法 |
| US20040154931A1 (en) * | 2003-02-12 | 2004-08-12 | Akihisa Hongo | Polishing liquid, polishing method and polishing apparatus |
| JP2005064199A (ja) * | 2003-08-11 | 2005-03-10 | Seiko Epson Corp | 薬液再生処理装置、半導体製造装置、薬液再生処理方法および半導体装置の製造方法 |
| JP2005079212A (ja) * | 2003-08-29 | 2005-03-24 | Trecenti Technologies Inc | 半導体製造装置、及び半導体装置の製造方法 |
| CN1691304B (zh) * | 2004-04-23 | 2010-05-05 | 上海华虹Nec电子有限公司 | 一种抑制多晶硅针孔的多晶硅层缓冲局部场氧化硅结构工艺方法 |
| KR20080011910A (ko) * | 2006-08-01 | 2008-02-11 | 세메스 주식회사 | 약액 혼합 장치 및 방법 |
| JP2008103678A (ja) * | 2006-09-20 | 2008-05-01 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| US8409997B2 (en) * | 2007-01-25 | 2013-04-02 | Taiwan Semiconductor Maufacturing Co., Ltd. | Apparatus and method for controlling silicon nitride etching tank |
| JP4471131B2 (ja) * | 2007-02-19 | 2010-06-02 | セイコーエプソン株式会社 | 処理装置および半導体装置の製造方法 |
| CN100499025C (zh) * | 2007-11-16 | 2009-06-10 | 无锡中微晶园电子有限公司 | 用于存储器单元的sonos结构腐蚀工艺 |
| JP4966223B2 (ja) * | 2008-02-29 | 2012-07-04 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
| KR101316054B1 (ko) * | 2008-08-08 | 2013-10-10 | 삼성전자주식회사 | 실리콘 산화막 식각용 조성물 및 이를 이용한 실리콘 산화막의 식각 방법 |
| US8105851B1 (en) * | 2010-09-23 | 2012-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride film wet stripping |
| JP2012074601A (ja) * | 2010-09-29 | 2012-04-12 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
| JP5280473B2 (ja) * | 2011-03-03 | 2013-09-04 | 東京エレクトロン株式会社 | エッチング方法、エッチング装置および記憶媒体 |
| JP5890198B2 (ja) * | 2011-03-25 | 2016-03-22 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
| US9257292B2 (en) * | 2011-03-30 | 2016-02-09 | Tokyo Electron Limited | Etch system and method for single substrate processing |
| JP5829444B2 (ja) | 2011-07-08 | 2015-12-09 | 株式会社Screenホールディングス | リン酸再生方法、リン酸再生装置および基板処理システム |
| JP5714449B2 (ja) * | 2011-08-25 | 2015-05-07 | 東京エレクトロン株式会社 | 液処理装置、液処理方法および記憶媒体 |
| US9911631B2 (en) * | 2013-03-15 | 2018-03-06 | Tel Fsi, Inc. | Processing system and method for providing a heated etching solution |
-
2014
- 2014-03-07 JP JP2014045275A patent/JP6302708B2/ja active Active
- 2014-03-21 TW TW106106835A patent/TWI692024B/zh active
- 2014-03-21 TW TW109109663A patent/TWI739355B/zh active
- 2014-03-21 TW TW110118487A patent/TWI810572B/zh active
- 2014-03-21 TW TW103110681A patent/TWI660419B/zh active
- 2014-03-26 KR KR1020140035547A patent/KR101596119B1/ko not_active Ceased
- 2014-03-28 CN CN201410218651.8A patent/CN104078391B/zh active Active
- 2014-03-28 US US14/228,515 patent/US20140290859A1/en not_active Abandoned
- 2014-03-28 CN CN201710207544.9A patent/CN107452649B/zh active Active
-
2015
- 2015-12-24 KR KR1020150186442A patent/KR101687924B1/ko active Active
-
2016
- 2016-12-09 KR KR1020160167523A patent/KR102062749B1/ko active Active
-
2019
- 2019-12-18 KR KR1020190169753A patent/KR102253286B1/ko active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010037993A1 (en) * | 1997-09-22 | 2001-11-08 | Katsuo Iwasaki | Etching method and wiring board manufactured by the method |
| CN1971843A (zh) * | 2005-11-24 | 2007-05-30 | 东京毅力科创株式会社 | 基板处理方法以及基板处理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104078391B (zh) | 2017-09-22 |
| CN107452649A (zh) | 2017-12-08 |
| KR101596119B1 (ko) | 2016-02-19 |
| KR20140118868A (ko) | 2014-10-08 |
| JP6302708B2 (ja) | 2018-03-28 |
| TW201448020A (zh) | 2014-12-16 |
| TWI660419B (zh) | 2019-05-21 |
| TW201724250A (zh) | 2017-07-01 |
| TW202029329A (zh) | 2020-08-01 |
| CN107452649B (zh) | 2020-10-20 |
| KR20190142305A (ko) | 2019-12-26 |
| US20140290859A1 (en) | 2014-10-02 |
| KR20160147239A (ko) | 2016-12-22 |
| TWI739355B (zh) | 2021-09-11 |
| KR20160006142A (ko) | 2016-01-18 |
| TW202135158A (zh) | 2021-09-16 |
| TWI810572B (zh) | 2023-08-01 |
| KR102253286B1 (ko) | 2021-05-20 |
| CN104078391A (zh) | 2014-10-01 |
| JP2014209581A (ja) | 2014-11-06 |
| KR101687924B1 (ko) | 2016-12-19 |
| KR102062749B1 (ko) | 2020-01-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI692024B (zh) | 濕式蝕刻裝置 | |
| JP7098800B2 (ja) | 基板処理装置及び基板処理方法 | |
| JP6320869B2 (ja) | 基板処理装置および基板処理方法 | |
| TWI553888B (zh) | 基板處理裝置及基板處理方法 | |
| TWI555078B (zh) | 用以提供加熱的蝕刻溶液之方法 | |
| TWI602254B (zh) | 基板處理裝置及基板處理方法 | |
| JP6320868B2 (ja) | 基板処理装置および基板処理方法 | |
| JP5313647B2 (ja) | 基板処理装置及び基板処理方法 | |
| JP6687784B2 (ja) | ウェットエッチング装置 | |
| JP2013207207A (ja) | 基板液処理装置及び基板液処理方法 |