DE60135128D1 - Vorrichtung zur Bestimmung des Gehalts an Siliciumdioxid - Google Patents

Vorrichtung zur Bestimmung des Gehalts an Siliciumdioxid

Info

Publication number
DE60135128D1
DE60135128D1 DE60135128T DE60135128T DE60135128D1 DE 60135128 D1 DE60135128 D1 DE 60135128D1 DE 60135128 T DE60135128 T DE 60135128T DE 60135128 T DE60135128 T DE 60135128T DE 60135128 D1 DE60135128 D1 DE 60135128D1
Authority
DE
Germany
Prior art keywords
determining
content
silicon dioxide
dioxide
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60135128T
Other languages
English (en)
Inventor
Stefan Dr Ottow
Ulf Steuer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qimonda AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Application granted granted Critical
Publication of DE60135128D1 publication Critical patent/DE60135128D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
DE60135128T 2001-10-18 2001-10-18 Vorrichtung zur Bestimmung des Gehalts an Siliciumdioxid Expired - Lifetime DE60135128D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01124912A EP1306886B1 (de) 2001-10-18 2001-10-18 Vorrichtung zur Bestimmung des Gehalts an Siliciumdioxid

Publications (1)

Publication Number Publication Date
DE60135128D1 true DE60135128D1 (de) 2008-09-11

Family

ID=8179007

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60135128T Expired - Lifetime DE60135128D1 (de) 2001-10-18 2001-10-18 Vorrichtung zur Bestimmung des Gehalts an Siliciumdioxid

Country Status (4)

Country Link
US (1) US6749716B2 (de)
EP (1) EP1306886B1 (de)
JP (1) JP2003158116A (de)
DE (1) DE60135128D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100607797B1 (ko) * 2004-09-14 2006-08-02 동부일렉트로닉스 주식회사 실리콘 질화막 스트립 제어 장치 및 방법
US8298435B2 (en) * 2007-10-19 2012-10-30 International Business Machines Corporation Selective etching bath methods
JPWO2010013586A1 (ja) * 2008-07-30 2012-01-12 株式会社 堀場アドバンスドテクノ ケイ素濃度測定装置
CN103115921A (zh) * 2013-01-28 2013-05-22 云南磷化集团有限公司 一种测定铁矿石中二氧化硅含量的方法
JP6302708B2 (ja) * 2013-03-29 2018-03-28 芝浦メカトロニクス株式会社 ウェットエッチング装置
JP6529625B2 (ja) * 2013-03-29 2019-06-12 芝浦メカトロニクス株式会社 ウェットエッチング装置
JP6370233B2 (ja) * 2015-01-30 2018-08-08 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP6434367B2 (ja) * 2015-05-14 2018-12-05 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
KR102511986B1 (ko) 2015-09-02 2023-03-21 삼성전자주식회사 기판 처리 장치 및 기판 처리 방법
TW201713751A (zh) * 2015-10-06 2017-04-16 聯華電子股份有限公司 酸槽補酸系統與方法
JP7101083B2 (ja) * 2018-08-23 2022-07-14 東京エレクトロン株式会社 基板液処理装置、基板液処理方法および記憶媒体
JP2020035794A (ja) * 2018-08-27 2020-03-05 キオクシア株式会社 基板処理装置および半導体装置の製造方法
CN109192680B (zh) * 2018-08-27 2020-12-11 长江存储科技有限责任公司 化学液槽装置
KR102084044B1 (ko) * 2018-12-24 2020-03-03 주식회사 세미부스터 인산용액 중의 실리콘 농도 분석방법
JP2020141006A (ja) * 2019-02-27 2020-09-03 キオクシア株式会社 基板処理装置および半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8923261D0 (en) * 1989-10-16 1989-12-06 Boc Group Plc Cooling liquids
JP3430611B2 (ja) * 1994-02-16 2003-07-28 富士通株式会社 エッチング装置と濃燐酸溶液の処理方法
JPH09275091A (ja) * 1996-04-03 1997-10-21 Mitsubishi Electric Corp 半導体窒化膜エッチング装置
JP3075350B2 (ja) * 1997-12-03 2000-08-14 日本電気株式会社 薬液処理方法および薬液処理装置
US6126848A (en) * 1998-05-06 2000-10-03 International Business Machines Corporation Indirect endpoint detection by chemical reaction and chemiluminescence
US6207068B1 (en) * 1998-11-18 2001-03-27 Advanced Micro Devices, Inc. Silicon nitride etch bath system

Also Published As

Publication number Publication date
EP1306886A1 (de) 2003-05-02
EP1306886B1 (de) 2008-07-30
US20030075272A1 (en) 2003-04-24
US6749716B2 (en) 2004-06-15
JP2003158116A (ja) 2003-05-30

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: QIMONDA AG, 81739 MUENCHEN, DE

8364 No opposition during term of opposition