TWI691582B - 蝕刻用組合物 - Google Patents

蝕刻用組合物 Download PDF

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Publication number
TWI691582B
TWI691582B TW104122910A TW104122910A TWI691582B TW I691582 B TWI691582 B TW I691582B TW 104122910 A TW104122910 A TW 104122910A TW 104122910 A TW104122910 A TW 104122910A TW I691582 B TWI691582 B TW I691582B
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TW
Taiwan
Prior art keywords
chemical formula
inorganic acid
integer
etching
hydrogen
Prior art date
Application number
TW104122910A
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English (en)
Chinese (zh)
Other versions
TW201604265A (zh
Inventor
朴宰完
林廷訓
李珍旭
Original Assignee
南韓商秀博瑞殷股份有限公司
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Priority claimed from KR1020140090662A external-priority patent/KR101539374B1/ko
Priority claimed from KR1020140090663A external-priority patent/KR101539375B1/ko
Priority claimed from KR1020140090661A external-priority patent/KR101539373B1/ko
Priority claimed from KR1020150078400A external-priority patent/KR101627181B1/ko
Application filed by 南韓商秀博瑞殷股份有限公司 filed Critical 南韓商秀博瑞殷股份有限公司
Publication of TW201604265A publication Critical patent/TW201604265A/zh
Application granted granted Critical
Publication of TWI691582B publication Critical patent/TWI691582B/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6684—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a ferroelectric gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Silicon Polymers (AREA)
TW104122910A 2014-07-17 2015-07-15 蝕刻用組合物 TWI691582B (zh)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
KR10-2014-0090662 2014-07-17
KR20140090660 2014-07-17
KR1020140090662A KR101539374B1 (ko) 2014-07-17 2014-07-17 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법
KR10-2014-0090661 2014-07-17
KR1020140090663A KR101539375B1 (ko) 2014-07-17 2014-07-17 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법
KR10-2014-0090663 2014-07-17
KR10-2014-0090660 2014-07-17
KR1020140090661A KR101539373B1 (ko) 2014-07-17 2014-07-17 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법
KR1020150078400A KR101627181B1 (ko) 2014-07-17 2015-06-03 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법
KR10-2015-0078400 2015-06-03

Publications (2)

Publication Number Publication Date
TW201604265A TW201604265A (zh) 2016-02-01
TWI691582B true TWI691582B (zh) 2020-04-21

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TW104122910A TWI691582B (zh) 2014-07-17 2015-07-15 蝕刻用組合物

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JP (2) JP6580397B2 (ja)
CN (1) CN109913220B (ja)
TW (1) TWI691582B (ja)

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US10325779B2 (en) 2016-03-30 2019-06-18 Tokyo Electron Limited Colloidal silica growth inhibitor and associated method and system
US10515820B2 (en) 2016-03-30 2019-12-24 Tokyo Electron Limited Process and apparatus for processing a nitride structure without silica deposition
US10995269B2 (en) * 2016-11-24 2021-05-04 Samsung Electronics Co., Ltd. Etchant composition and method of fabricating integrated circuit device using the same
CN109689838A (zh) 2016-12-26 2019-04-26 秀博瑞殷株式公社 蚀刻用组合物和使用该蚀刻用组合物制造半导体器件的方法
CN109478509B (zh) 2017-03-15 2024-01-12 株式会社东芝 蚀刻液、蚀刻方法及电子部件的制造方法
CN109216187B (zh) * 2017-07-06 2023-08-29 Oci有限公司 蚀刻组合物、蚀刻方法及利用其的半导体器件的制造方法
KR102436721B1 (ko) * 2017-09-06 2022-08-29 엔테그리스, 아이엔씨. 질화 규소를 포함하는 기판을 에칭하는 조성물 및 방법
KR102629574B1 (ko) * 2017-11-24 2024-01-26 동우 화인켐 주식회사 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법
KR102084164B1 (ko) * 2018-03-06 2020-05-27 에스케이씨 주식회사 반도체 공정용 조성물 및 반도체 공정
KR102005963B1 (ko) * 2018-05-26 2019-07-31 에스케이이노베이션 주식회사 식각액 조성물 및 실란화합물
KR102024758B1 (ko) * 2018-05-26 2019-09-25 에스케이이노베이션 주식회사 식각액 조성물, 절연막의 식각방법, 반도체 소자의 제조방법 및 실란화합물
KR102557642B1 (ko) * 2018-10-25 2023-07-20 에스케이이노베이션 주식회사 식각 조성물 첨가제, 그 제조방법 및 이를 포함하는 식각 조성물
KR102633743B1 (ko) * 2018-10-26 2024-02-05 에스케이이노베이션 주식회사 식각액 조성물, 절연막의 식각방법 및 반도체 소자의 제조방법
WO2020097778A1 (en) 2018-11-13 2020-05-22 Yangtze Memory Technologies Co., Ltd. Additive to phosphoric acid etchant
KR20200118368A (ko) * 2019-04-03 2020-10-15 조이풀니스 어드밴스드 케미칼 컴퍼니 리미티드 에칭 잔류물 제거를 위한 세정 조성물
KR20200137410A (ko) 2019-05-30 2020-12-09 에스케이이노베이션 주식회사 식각 조성물, 이를 이용한 절연막 식각 방법 및 반도체 소자의 제조방법, 그리고 신규 화합물
KR20210006642A (ko) 2019-07-09 2021-01-19 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
KR102675055B1 (ko) * 2019-09-18 2024-06-12 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
TW202128722A (zh) 2019-09-30 2021-08-01 美商慧盛材料美國有限責任公司 用於製造半導體裝置期間之選擇性移除氮化矽之蝕刻組合物及方法
CN115011350A (zh) * 2022-07-05 2022-09-06 上海集成电路材料研究院有限公司 一种蚀刻组合物、蚀刻方法及应用
CN115287069B (zh) * 2022-07-06 2023-06-09 湖北兴福电子材料股份有限公司 一种抑制二氧化硅蚀刻的无c蚀刻液

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Also Published As

Publication number Publication date
CN109913220B (zh) 2022-03-29
JP6890637B2 (ja) 2021-06-18
JP2016029717A (ja) 2016-03-03
CN109913220A (zh) 2019-06-21
JP2020010043A (ja) 2020-01-16
JP6580397B2 (ja) 2019-09-25
TW201604265A (zh) 2016-02-01

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