JP6890637B2 - エッチング用組成物及びこれを用いた半導体素子の製造方法 - Google Patents
エッチング用組成物及びこれを用いた半導体素子の製造方法 Download PDFInfo
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- JP6890637B2 JP6890637B2 JP2019143244A JP2019143244A JP6890637B2 JP 6890637 B2 JP6890637 B2 JP 6890637B2 JP 2019143244 A JP2019143244 A JP 2019143244A JP 2019143244 A JP2019143244 A JP 2019143244A JP 6890637 B2 JP6890637 B2 JP 6890637B2
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- inorganic acid
- film
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- 238000005530 etching Methods 0.000 title claims description 275
- 239000000203 mixture Substances 0.000 title claims description 160
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 239000000126 substance Substances 0.000 claims description 234
- -1 silane inorganic acid salt Chemical class 0.000 claims description 144
- 229910000077 silane Inorganic materials 0.000 claims description 113
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 98
- 150000004767 nitrides Chemical class 0.000 claims description 96
- 150000001875 compounds Chemical class 0.000 claims description 69
- 150000007522 mineralic acids Chemical class 0.000 claims description 67
- 125000004432 carbon atom Chemical group C* 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 58
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 48
- 125000005843 halogen group Chemical group 0.000 claims description 31
- 125000003545 alkoxy group Chemical group 0.000 claims description 24
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 17
- 239000002904 solvent Substances 0.000 claims description 16
- 239000007864 aqueous solution Substances 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims description 8
- HIFJUMGIHIZEPX-UHFFFAOYSA-N sulfuric acid;sulfur trioxide Chemical compound O=S(=O)=O.OS(O)(=O)=O HIFJUMGIHIZEPX-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 150000003868 ammonium compounds Chemical class 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 239000010408 film Substances 0.000 description 277
- 125000001424 substituent group Chemical group 0.000 description 38
- 230000000052 comparative effect Effects 0.000 description 34
- 229910052739 hydrogen Inorganic materials 0.000 description 25
- 239000001257 hydrogen Substances 0.000 description 25
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 23
- 239000010410 layer Substances 0.000 description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 20
- 229920000137 polyphosphoric acid Polymers 0.000 description 19
- 125000000217 alkyl group Chemical group 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 18
- 125000003118 aryl group Chemical group 0.000 description 17
- 239000002245 particle Substances 0.000 description 17
- 125000001309 chloro group Chemical group Cl* 0.000 description 15
- 125000001153 fluoro group Chemical group F* 0.000 description 14
- 239000000758 substrate Substances 0.000 description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 239000007805 chemical reaction reactant Substances 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 150000002431 hydrogen Chemical class 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- 238000000926 separation method Methods 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 8
- 125000001246 bromo group Chemical group Br* 0.000 description 7
- 239000011230 binding agent Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 125000002346 iodo group Chemical group I* 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 4
- 238000005481 NMR spectroscopy Methods 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 229940005657 pyrophosphoric acid Drugs 0.000 description 4
- 239000005368 silicate glass Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- QGJOPFRUJISHPQ-UHFFFAOYSA-N Carbon disulfide Chemical compound S=C=S QGJOPFRUJISHPQ-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910021341 titanium silicide Inorganic materials 0.000 description 3
- HXVNBWAKAOHACI-UHFFFAOYSA-N 2,4-dimethyl-3-pentanone Chemical compound CC(C)C(=O)C(C)C HXVNBWAKAOHACI-UHFFFAOYSA-N 0.000 description 2
- IUVCFHHAEHNCFT-INIZCTEOSA-N 2-[(1s)-1-[4-amino-3-(3-fluoro-4-propan-2-yloxyphenyl)pyrazolo[3,4-d]pyrimidin-1-yl]ethyl]-6-fluoro-3-(3-fluorophenyl)chromen-4-one Chemical compound C1=C(F)C(OC(C)C)=CC=C1C(C1=C(N)N=CN=C11)=NN1[C@@H](C)C1=C(C=2C=C(F)C=CC=2)C(=O)C2=CC(F)=CC=C2O1 IUVCFHHAEHNCFT-INIZCTEOSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- 0 CC1*(C)(C)C2C1CCC2 Chemical compound CC1*(C)(C)C2C1CCC2 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000000010 aprotic solvent Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- DCFKHNIGBAHNSS-UHFFFAOYSA-N chloro(triethyl)silane Chemical compound CC[Si](Cl)(CC)CC DCFKHNIGBAHNSS-UHFFFAOYSA-N 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- BYLOHCRAPOSXLY-UHFFFAOYSA-N dichloro(diethyl)silane Chemical compound CC[Si](Cl)(Cl)CC BYLOHCRAPOSXLY-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- WDAXFOBOLVPGLV-UHFFFAOYSA-N ethyl isobutyrate Chemical compound CCOC(=O)C(C)C WDAXFOBOLVPGLV-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 2
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 2
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- HNAGHMKIPMKKBB-UHFFFAOYSA-N 1-benzylpyrrolidine-3-carboxamide Chemical compound C1C(C(=O)N)CCN1CC1=CC=CC=C1 HNAGHMKIPMKKBB-UHFFFAOYSA-N 0.000 description 1
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
- 239000005695 Ammonium acetate Substances 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- UXAVHAVHWOGYRC-UHFFFAOYSA-N CC1C(C2)C2C(C)C1 Chemical compound CC1C(C2)C2C(C)C1 UXAVHAVHWOGYRC-UHFFFAOYSA-N 0.000 description 1
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- CVBURIHGVPWMOA-UHFFFAOYSA-N O1SSO1.N Chemical compound O1SSO1.N CVBURIHGVPWMOA-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- NMLJWWANBLFBTD-UHFFFAOYSA-N [chloro(dimethyl)silyl] triethyl silicate Chemical compound C(C)O[Si](O[Si](C)(C)Cl)(OCC)OCC NMLJWWANBLFBTD-UHFFFAOYSA-N 0.000 description 1
- USXPORRDRMUQSB-UHFFFAOYSA-N [chloro(dimethyl)silyl] trimethyl silicate Chemical compound CO[Si](O[Si](C)(C)Cl)(OC)OC USXPORRDRMUQSB-UHFFFAOYSA-N 0.000 description 1
- 229940043376 ammonium acetate Drugs 0.000 description 1
- 235000019257 ammonium acetate Nutrition 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- OBNCKNCVKJNDBV-UHFFFAOYSA-N butanoic acid ethyl ester Natural products CCCC(=O)OCC OBNCKNCVKJNDBV-UHFFFAOYSA-N 0.000 description 1
- 229950005499 carbon tetrachloride Drugs 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000008280 chlorinated hydrocarbons Chemical class 0.000 description 1
- ACTAPAGNZPZLEF-UHFFFAOYSA-N chloro(tripropyl)silane Chemical compound CCC[Si](Cl)(CCC)CCC ACTAPAGNZPZLEF-UHFFFAOYSA-N 0.000 description 1
- CXIMXHWYSUUYSO-UHFFFAOYSA-N chloro-(2,2-dichloroethylsilyloxy)-dimethylsilane Chemical compound ClC(C[SiH2]O[Si](C)(C)Cl)Cl CXIMXHWYSUUYSO-UHFFFAOYSA-N 0.000 description 1
- CVOXVZZKYOQQIY-UHFFFAOYSA-N chloro-(chloromethyl)-diethylsilyloxy-methylsilane Chemical compound ClC[Si](C)(Cl)O[SiH](CC)CC CVOXVZZKYOQQIY-UHFFFAOYSA-N 0.000 description 1
- WBUSLJAAQVHDPS-UHFFFAOYSA-N chloro-(chloromethyl)-dimethylsilyloxy-methylsilane Chemical compound ClC[Si](C)(Cl)O[SiH](C)C WBUSLJAAQVHDPS-UHFFFAOYSA-N 0.000 description 1
- LFYSTAKGDIOTJQ-UHFFFAOYSA-N chloro-(dichloromethyl)-dimethylsilyloxysilane Chemical compound Cl[SiH](C(Cl)Cl)O[SiH](C)C LFYSTAKGDIOTJQ-UHFFFAOYSA-N 0.000 description 1
- CZHHXSFNQBJMTF-UHFFFAOYSA-N chloro-(dichloromethylsilyloxy)-dimethylsilane Chemical compound ClC(Cl)[SiH2]O[Si](C)(C)Cl CZHHXSFNQBJMTF-UHFFFAOYSA-N 0.000 description 1
- IHIVQDTVOIBBRE-UHFFFAOYSA-N chloro-(diethoxymethylsilyloxy)-dimethylsilane Chemical compound C(C)OC(OCC)[SiH2]O[Si](C)(C)Cl IHIVQDTVOIBBRE-UHFFFAOYSA-N 0.000 description 1
- NFCNDJVXPYJSSR-UHFFFAOYSA-N chloro-(difluoromethylsilyloxy)-dimethylsilane Chemical compound FC(F)[SiH2]O[Si](C)(C)Cl NFCNDJVXPYJSSR-UHFFFAOYSA-N 0.000 description 1
- UJWWXZVKEKOMKV-UHFFFAOYSA-N chloro-(dimethoxymethyl)-dimethylsilyloxy-methylsilane Chemical compound COC([Si](C)(Cl)O[SiH](C)C)OC UJWWXZVKEKOMKV-UHFFFAOYSA-N 0.000 description 1
- GKDDHPFVACLWSB-UHFFFAOYSA-N chloro-dimethyl-trifluorosilyloxysilane Chemical compound F[Si](O[Si](C)(C)Cl)(F)F GKDDHPFVACLWSB-UHFFFAOYSA-N 0.000 description 1
- YUVXRTOSEYDYJY-UHFFFAOYSA-N chloro-dimethylsilyloxy-(ethoxymethyl)-methylsilane Chemical compound C(C)OC[Si](C)(Cl)O[SiH](C)C YUVXRTOSEYDYJY-UHFFFAOYSA-N 0.000 description 1
- FFABYDVKAHNUOH-UHFFFAOYSA-N chloro-dimethylsilyloxy-(methoxymethyl)-methylsilane Chemical compound COC[Si](C)(Cl)O[SiH](C)C FFABYDVKAHNUOH-UHFFFAOYSA-N 0.000 description 1
- YGHUUVGIRWMJGE-UHFFFAOYSA-N chlorodimethylsilane Chemical compound C[SiH](C)Cl YGHUUVGIRWMJGE-UHFFFAOYSA-N 0.000 description 1
- 229960001701 chloroform Drugs 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 125000003963 dichloro group Chemical group Cl* 0.000 description 1
- UOZZKLIPYZQXEP-UHFFFAOYSA-N dichloro(dipropyl)silane Chemical compound CCC[Si](Cl)(Cl)CCC UOZZKLIPYZQXEP-UHFFFAOYSA-N 0.000 description 1
- ZMAPKOCENOWQRE-UHFFFAOYSA-N diethoxy(diethyl)silane Chemical compound CCO[Si](CC)(CC)OCC ZMAPKOCENOWQRE-UHFFFAOYSA-N 0.000 description 1
- HZLIIKNXMLEWPA-UHFFFAOYSA-N diethoxy(dipropyl)silane Chemical compound CCC[Si](CCC)(OCC)OCC HZLIIKNXMLEWPA-UHFFFAOYSA-N 0.000 description 1
- OJBGGLLCYJYHPG-UHFFFAOYSA-N diethyl(difluoro)silane Chemical compound CC[Si](F)(F)CC OJBGGLLCYJYHPG-UHFFFAOYSA-N 0.000 description 1
- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 description 1
- BZCJJERBERAQKQ-UHFFFAOYSA-N diethyl(dipropoxy)silane Chemical compound CCCO[Si](CC)(CC)OCCC BZCJJERBERAQKQ-UHFFFAOYSA-N 0.000 description 1
- XRRDNAZMVAXXQP-UHFFFAOYSA-N difluoro(dimethyl)silane Chemical compound C[Si](C)(F)F XRRDNAZMVAXXQP-UHFFFAOYSA-N 0.000 description 1
- OMZDGOHZDWOQKM-UHFFFAOYSA-N difluoro(propyl)silane Chemical compound CCC[SiH](F)F OMZDGOHZDWOQKM-UHFFFAOYSA-N 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- JVUVKQDVTIIMOD-UHFFFAOYSA-N dimethoxy(dipropyl)silane Chemical compound CCC[Si](OC)(OC)CCC JVUVKQDVTIIMOD-UHFFFAOYSA-N 0.000 description 1
- ZIDTUTFKRRXWTK-UHFFFAOYSA-N dimethyl(dipropoxy)silane Chemical compound CCCO[Si](C)(C)OCCC ZIDTUTFKRRXWTK-UHFFFAOYSA-N 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- AVBCBOQFOQZNFK-UHFFFAOYSA-N dipropoxy(dipropyl)silane Chemical compound CCCO[Si](CCC)(CCC)OCCC AVBCBOQFOQZNFK-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- DFJDZTPFNSXNAX-UHFFFAOYSA-N ethoxy(triethyl)silane Chemical compound CCO[Si](CC)(CC)CC DFJDZTPFNSXNAX-UHFFFAOYSA-N 0.000 description 1
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 1
- STBFUFDKXHQVMJ-UHFFFAOYSA-N ethoxy(tripropyl)silane Chemical compound CCC[Si](CCC)(CCC)OCC STBFUFDKXHQVMJ-UHFFFAOYSA-N 0.000 description 1
- NHOREJPMXSLGGR-UHFFFAOYSA-N ethyl(trifluoro)silane Chemical compound CC[Si](F)(F)F NHOREJPMXSLGGR-UHFFFAOYSA-N 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- CTIKAHQFRQTTAY-UHFFFAOYSA-N fluoro(trimethyl)silane Chemical compound C[Si](C)(C)F CTIKAHQFRQTTAY-UHFFFAOYSA-N 0.000 description 1
- DMTSDXQHAYTVGH-UHFFFAOYSA-N fluoro(tripropyl)silane Chemical compound CCC[Si](F)(CCC)CCC DMTSDXQHAYTVGH-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 1
- FUMSHFZKHQOOIX-UHFFFAOYSA-N methoxy(tripropyl)silane Chemical compound CCC[Si](CCC)(CCC)OC FUMSHFZKHQOOIX-UHFFFAOYSA-N 0.000 description 1
- RJMRIDVWCWSWFR-UHFFFAOYSA-N methyl(tripropoxy)silane Chemical compound CCCO[Si](C)(OCCC)OCCC RJMRIDVWCWSWFR-UHFFFAOYSA-N 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- UPSOBXZLFLJAKK-UHFFFAOYSA-N ozone;tetraethyl silicate Chemical compound [O-][O+]=O.CCO[Si](OCC)(OCC)OCC UPSOBXZLFLJAKK-UHFFFAOYSA-N 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- IEKMLKYASCBALX-UHFFFAOYSA-N propoxy(tripropyl)silane Chemical compound CCCO[Si](CCC)(CCC)CCC IEKMLKYASCBALX-UHFFFAOYSA-N 0.000 description 1
- ZMYXZXUHYAGGKG-UHFFFAOYSA-N propoxysilane Chemical compound CCCO[SiH3] ZMYXZXUHYAGGKG-UHFFFAOYSA-N 0.000 description 1
- 239000005053 propyltrichlorosilane Substances 0.000 description 1
- 229940048084 pyrophosphate Drugs 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- QHXRLTWZMMOIBS-UHFFFAOYSA-N trichloro(dichloromethylsilyloxy)silane Chemical compound Cl[Si](O[SiH2]C(Cl)Cl)(Cl)Cl QHXRLTWZMMOIBS-UHFFFAOYSA-N 0.000 description 1
- ZOYFEXPFPVDYIS-UHFFFAOYSA-N trichloro(ethyl)silane Chemical compound CC[Si](Cl)(Cl)Cl ZOYFEXPFPVDYIS-UHFFFAOYSA-N 0.000 description 1
- CDEXVXFKSBAYEJ-UHFFFAOYSA-N trichloro(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](Cl)(Cl)Cl CDEXVXFKSBAYEJ-UHFFFAOYSA-N 0.000 description 1
- DOEHJNBEOVLHGL-UHFFFAOYSA-N trichloro(propyl)silane Chemical compound CCC[Si](Cl)(Cl)Cl DOEHJNBEOVLHGL-UHFFFAOYSA-N 0.000 description 1
- QHAHOIWVGZZELU-UHFFFAOYSA-N trichloro(trichlorosilyloxy)silane Chemical compound Cl[Si](Cl)(Cl)O[Si](Cl)(Cl)Cl QHAHOIWVGZZELU-UHFFFAOYSA-N 0.000 description 1
- WYCBAFYXQLEQIO-UHFFFAOYSA-N trichloro-[chloro(dimethyl)silyl]oxysilane Chemical compound C[Si](C)(Cl)O[Si](Cl)(Cl)Cl WYCBAFYXQLEQIO-UHFFFAOYSA-N 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- QVMRVWAOMIXFFW-UHFFFAOYSA-N triethyl(fluoro)silane Chemical compound CC[Si](F)(CC)CC QVMRVWAOMIXFFW-UHFFFAOYSA-N 0.000 description 1
- HUZZQXYTKNNCOU-UHFFFAOYSA-N triethyl(methoxy)silane Chemical compound CC[Si](CC)(CC)OC HUZZQXYTKNNCOU-UHFFFAOYSA-N 0.000 description 1
- RXJWOBGGPLEFEE-UHFFFAOYSA-N triethyl(propoxy)silane Chemical compound CCCO[Si](CC)(CC)CC RXJWOBGGPLEFEE-UHFFFAOYSA-N 0.000 description 1
- BHOCBLDBJFCBQS-UHFFFAOYSA-N trifluoro(methyl)silane Chemical compound C[Si](F)(F)F BHOCBLDBJFCBQS-UHFFFAOYSA-N 0.000 description 1
- JGHTXIKECBJCFI-UHFFFAOYSA-N trifluoro(propyl)silane Chemical compound CCC[Si](F)(F)F JGHTXIKECBJCFI-UHFFFAOYSA-N 0.000 description 1
- PHPGKIATZDCVHL-UHFFFAOYSA-N trimethyl(propoxy)silane Chemical compound CCCO[Si](C)(C)C PHPGKIATZDCVHL-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- VUWVDNLZJXLQPT-UHFFFAOYSA-N tripropoxy(propyl)silane Chemical compound CCCO[Si](CCC)(OCCC)OCCC VUWVDNLZJXLQPT-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6684—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a ferroelectric gate insulator
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- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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Description
(化学式A1)
前記R1〜R4は、それぞれ独立して、水素原子、ハロゲン原子、炭素数1〜10のアルキル基、炭素数1〜10のアルコキシ基および炭素数6〜30のアリール基からなる群より選択されるいずれか一つであり、前記R1〜R4のうち少なくとも一つは、ハロゲン原子または炭素数1〜10のアルコキシ基であり、前記nは1〜10の整数である)
本発明の他の一実施例に係るエッチング用組成物は、第1無機酸と、ポリリン酸および下記化学式A1で表されるシラン化合物を反応させて生成されたシラン無機酸塩と、溶媒とを含む。
(化学式A1)
前記R1〜R10は、それぞれ独立して、水素原子、ハロゲン原子、炭素数1〜10のアルキル基、炭素数1〜10のアルコキシ基および炭素数6〜30のアリール基からなる群より選択されるいずれか一つであり、前記R1〜R4のうち少なくとも一つは、ハロゲン原子または炭素数1〜10のアルコキシ基であり、前記R5〜R10のうち少なくとも一つはハロゲン原子または炭素数1〜10のアルコキシ基であり、前記nは1〜10の整数である)
本発明のまた他の一実施例に係る半導体素子の製造方法は、前記エッチング用組成物を用いて行われるエッチング工程を含む。
機酸と、シラン無機酸塩と、溶剤とを含むことができる。一実施形態において、シラン無機酸塩は、第2無機酸とシラン化合物との反応によって製造することができる。
応させ生成されることによって、単一の化学式構造ではなく、様々な化学式構造を有するシラン無機酸塩が混合されたものでもよい。つまり、前記エッチング用組成物は、互いに異なる化学式構造を有する少なくとも2種以上のシラン無機酸塩の混合物を含むことができる。しかし、本発明はこれに限定されるものではなく、前記エッチング用組成物は、1種のシラン無機酸塩のみを含むこともできる。
(化学式A2)
(化学式B3−1)
(化学式B3−3)
(化学式B3−4)
(化学式B3−5)
(化学式B3−6)
(化学式B3−8)
(化学式C1)
して0〜10の整数である。
(化学式C2)
(化学式C1−1)
(化学式C1−5)
(化学式C1−6)
(化学式C1−7)
(化学式C1−8)
(化学式C1−9)
(化学式C1−10)
(化学式C4)
(化学式C3−1)
(化学式C5)
(化学式C6)
または第2の化学式C6で表される置換基が置換されるものでよい。つまり、前記のR33〜R35位置に前記第2の化学式C6で表される置換基が置換されてもよく、前記第2の化学式C6で表される置換基の前記R33〜R35位置に第3の化学式C6で表される置換基がまた置換されてもよい。
(化学式C5−1)
Glass)膜、PSG(Phospho Silicate Glass)膜、BSG( Boro Silicate Glass)膜、PSZ(Polysilazane)膜、FSG(Fluorinated Silicate Glass)膜、LP−TEOS(Low Pressure Tetra Ethyl Ortho Silicate)膜、PETEOS(Plasma Enhanced Tetra Ethyl Ortho Silicate)膜、HTO(High Temperature Oxide)膜、MTO(Medium Temperature Oxide)膜、USG(Undopped Silicate Glass)膜、SOG(Spin On
Glass)膜、APL(Advanced Planarization Layer)膜、ALD(Atomic Layer Deposition)膜、PE−酸化膜(Plasma Enhanced oxide)、O3−TEOS(O3−Tetra
Ethyl Ortho Silicate)膜およびその組み合わせからなる群より選択される少なくとも1つ以上の膜であり得る。
させる一対の第1及び第2ホール(H1、H2)を形成する。第1および第2ホール(H1、H2)は、メモリセルのチャネル形成のための空間である。
<実施例A:エッチング用組成物の製造>
下記表A1に示すように、シラン無機酸塩およびリン酸を組成物の総重量に対して表される各重量比で混合して、エッチング用組成物を製造した。第1無機酸は、85%水溶液を用いた。
<実験例A1:製造されたエッチング用組成物の選択比測定>
前記製造されたエッチング用組成物を用いて157℃のプロセス温度で窒化膜および酸化膜に対するエッチングを行い、薄膜厚さの測定装置である偏光解析器(NANO VIEW、SEMG−1000)を用いて窒化膜および酸化膜のエッチング速度および選択比を測定して、表A2に示す。エッチング速度は、各膜を300秒間エッチングした後、各膜のエッチング処理前の膜厚とエッチング処理後の膜厚の差をエッチング時間(分)で割って算出した数値であり、選択比は酸化膜エッチング速度に対する窒化膜エッチング速度
の比を示す。
比較例A1では、リン酸を用いて157℃の処理温度でエッチング速度および選択比を前記実施例のように測定した。また、比較例A2では、リン酸にフッ酸0.05%を添加した混合物を利用して、フッ酸が添加された工程で可能な低温プロセスである130℃の処理温度においてエッチング速度および選択比を測定し、比較例A3では、比較例A2と同じ混合物を用いて、前記実施例と同じ157℃の処理温度でエッチング速度および選択比を測定した。比較例A1〜A3で使用されるリン酸は、85%水溶液である。比較例A1〜A3の評価結果を下記表A3に示す。
実施例A1およびA2で製造されたエッチング用組成物について、リン酸との混合直後(0時間)、および8時間経過後、エッチング用組成物を利用して、窒化膜および酸化膜のエッチング速度および選択比を測定した。比較例A4では、リン酸を用いて前記実施例と同様に窒化膜および酸化膜に対するエッチング速度および選択比を評価した。
下記の表B1に示すように、シラン無機酸塩およびリン酸を組成物の総重量に対して表示される各重量比で混合して、エッチング用組成物を製造した。第1無機酸は、85%水溶液を用いた。
前記製造されたエッチング用組成物を用いて157℃の処理温度で窒化膜および酸化膜に対するエッチングを行い、薄膜厚さの測定装置である偏光解析器(NANO VIEW、SEMG−1000)を用いて窒化膜および酸化膜に対するエッチング速度および選択比を測定して、表B2に示す。エッチング速度は、各膜を300秒間エッチングした後、各膜のエッチング処理前の膜厚とエッチング処理後の膜厚の差をエッチング時間(分)で割って算出した数値であり、選択比は酸化膜エッチング速度に対する窒化膜エッチング速度の比を示す。
比較例B1では、リン酸を用いて157℃の処理温度でエッチング速度および選択比を前記実施例のように測定した。また、比較例B2では、リン酸にフッ酸0.05%を添加した混合物を利用して、フッ酸が添加された工程で可能な低温プロセスである130℃の処理温度においてエッチング速度および選択比を測定し、比較例B3では、比較例B2と同じ混合物を用いて、前記実施例と同じ157℃の処理温度においてエッチング速度および選択比を測定した。比較例B1〜B3で用いられたリン酸は、85%水溶液であった。比較例B1〜B3の評価結果を下記表B3に示す。
調節してEFHの調節を容易にすることができ、酸化膜の膜質損傷を防止することができる。また、従来問題視されていたパーティクル発生を防止することができ、工程の安定性および信頼性を確保することができる。
<実施例C:エッチング用組成物の製造>
下記の表C1に示すように、シロキサン無機酸塩およびリン酸を組成物の総重量に対する表示の各重量比で混合して、エッチング用組成物を製造した。第1無機酸は、85%水溶液を用いた。
前記実施例C1で製造されたエッチング用組成物を用いて、157℃の処理温度で窒化膜および酸化膜に対するエッチングを行い、薄膜の厚さ測定装置である偏光解析器(NANO VIEW、SEMG−1000)を用いて窒化膜と酸化膜のエッチング速度および選択比を測定して、表C2に示す。エッチング速度は、各膜を300秒間エッチングした後、各膜のエッチング処理前の膜厚とエッチング処理後の膜厚の差をエッチング時間(分)で割って算出した数値であり、選択比は酸化膜エッチング速度に対する窒化膜エッチング速度の比を示す。
比較例C1では、リン酸を用いて157℃の処理温度でエッチング速度および選択比を前記実施例のように測定した。また、比較例C2では、リン酸にフッ酸0.05%を添加した混合物を利用して、フッ酸が添加された工程で可能な低温プロセスである130℃の処理温度においてエッチング速度および選択比を測定し、比較例C3では、比較例C2と同じ混合物を用いて、前記実施例と同じ157℃の処理温度においてエッチング速度および選択比を測定した。比較例C1〜C3で使用されるリン酸は、85%水溶液であった。比較例C1〜C3の評価結果を表C3に示した。
前記実施例C1で製造されたエッチング用組成物について、リン酸との混合直後(0時間)、および8時間経過後、エッチング用組成物を利用して、窒化膜および酸化膜に対するエッチング速度および選択比を測定した。比較例C4では、リン酸を用いて、前記実施例C1と同様に窒化膜および酸化膜のエッチング速度および選択比を評価した。
下記表D1に示すように、シラン無機酸塩およびリン酸を組成物の総重量に対して表示される各重量比で混合して、エッチング用組成物を製造した。リン酸は、85%水溶液を用いた。
前記製造されたエッチング用組成物を用いて157℃のプロセス温度で窒化膜および酸化膜のエッチングを行い、薄膜の厚さ測定装置である偏光解析器(NANO VIEW、SEMG−1000)を用いて窒化膜および酸化膜のエッチング速度および選択比を測定して表D2に示す。エッチング速度は、各膜を300秒間エッチングした後、各膜のエッチング処理前の膜厚とエッチング処理後の膜厚の差をエッチング時間(分)で割って算出した数値であり、選択比は酸化膜エッチング速度に対する窒化膜エッチング速度の比を示す。
比較例D1では、リン酸を用いて157℃のプロセス温度でエッチング速度および選択比を前記実施例のように測定した。また、比較例D2では、リン酸のフッ酸0.05%を添加した混合物を利用して、フッ酸が添加された工程で可能な低温プロセスである130℃のプロセス温度においてエッチング速度および選択比を測定し、比較例D3では、比較例D2と同じ混合物を用いて、前記実施例と同じ157℃のプロセス温度においてエッチング速度および選択比を測定した。比較例D1〜D3で使用されるリン酸は、85%水溶液であった。比較例D1〜D3の評価結果を下記表D3に示す。
Claims (3)
- 第1無機酸と、
第2無機酸とシラン化合物とを反応させて製造された少なくとも一つのシラン無機酸塩と、
溶媒とを含み、
前記第1無機酸はリン酸であり、
前記第2無機酸は、硫酸、発煙硫酸、硝酸、およびこれらの混合物からなる群より選択されるいずれか一つであり、
前記シラン化合物は、下記化学式1で表される:
(ここで、R1はメチル基であり、R2〜R4は、ハロゲン原子、または炭素数1〜10のアルコキシ基である)
化合物である、
酸化物層に対して窒化物層を選択的にエッチングするためのエッチング用組成物であり、
前記第2無機酸と前記シラン化合物との重量比が10:100〜20:100であり、
前記第1無機酸は、85%水溶液としての含有量が、83〜85重量%で、
前記シラン無機酸塩の含有量が1〜3重量%で、残部が追加の溶媒である水であり、
前記エッチング用組成物は、前記エッチング用組成物全体に対してアンモニウム系化合物を0.01重量%〜20重量%でさらに含むエッチング用組成物。 - 前記エッチング用組成物は、前記エッチング用組成物全体に対してフッ素系化合物を0.01重量%〜1重量%でさらに含むことを特徴とする、請求項1に記載のエッチング用組成物。
- 請求項1に記載の組成物を用いて行われるエッチング工程を含み、
前記エッチング工程は、酸化物層に対して窒化物層を選択的にエッチングすることを含む半導体素子の製造方法。
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US10515820B2 (en) | 2016-03-30 | 2019-12-24 | Tokyo Electron Limited | Process and apparatus for processing a nitride structure without silica deposition |
US10995269B2 (en) * | 2016-11-24 | 2021-05-04 | Samsung Electronics Co., Ltd. | Etchant composition and method of fabricating integrated circuit device using the same |
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SG11202001854VA (en) * | 2017-09-06 | 2020-03-30 | Entegris Inc | Compositions and methods for etching silicon nitride-containing substrates |
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Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4125551A (en) * | 1978-02-13 | 1978-11-14 | General Electric Company | Process for producing silylphosphates |
JPS61126090A (ja) * | 1984-11-21 | 1986-06-13 | Rasa Kogyo Kk | リン酸モノエステルの製造方法 |
JP3467411B2 (ja) * | 1998-08-07 | 2003-11-17 | 松下電器産業株式会社 | エッチング液,その製造方法及びエッチング方法 |
JP5003057B2 (ja) * | 2006-08-21 | 2012-08-15 | 東ソー株式会社 | エッチング用組成物及びエッチング方法 |
JP5332197B2 (ja) * | 2007-01-12 | 2013-11-06 | 東ソー株式会社 | エッチング用組成物及びエッチング方法 |
TW200849371A (en) * | 2007-02-28 | 2008-12-16 | Tosoh Corp | Etching method and etching composition useful for the method |
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US9012261B2 (en) * | 2013-03-13 | 2015-04-21 | Intermolecular, Inc. | High productivity combinatorial screening for stable metal oxide TFTs |
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