TWI676358B - 半導體裝置 - Google Patents
半導體裝置 Download PDFInfo
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- TWI676358B TWI676358B TW104135839A TW104135839A TWI676358B TW I676358 B TWI676358 B TW I676358B TW 104135839 A TW104135839 A TW 104135839A TW 104135839 A TW104135839 A TW 104135839A TW I676358 B TWI676358 B TW I676358B
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- terminal
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- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/03—Astable circuits
- H03K3/0315—Ring oscillators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
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|---|---|---|---|
| JP2014222832 | 2014-10-31 | ||
| JP2014-222832 | 2014-10-31 |
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| TW201622357A TW201622357A (zh) | 2016-06-16 |
| TWI676358B true TWI676358B (zh) | 2019-11-01 |
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| TW104135839A TWI676358B (zh) | 2014-10-31 | 2015-10-30 | 半導體裝置 |
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| JP (1) | JP6780927B2 (enExample) |
| KR (1) | KR20160051659A (enExample) |
| TW (1) | TWI676358B (enExample) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104321967B (zh) * | 2012-05-25 | 2018-01-09 | 株式会社半导体能源研究所 | 可编程逻辑装置及半导体装置 |
| WO2015132696A1 (en) * | 2014-03-07 | 2015-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving semiconductor device |
| JP6739150B2 (ja) * | 2014-08-08 | 2020-08-12 | 株式会社半導体エネルギー研究所 | 半導体装置、発振回路、位相同期回路及び電子機器 |
| US10038402B2 (en) | 2015-10-30 | 2018-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| JP6854670B2 (ja) | 2016-03-04 | 2021-04-07 | 株式会社半導体エネルギー研究所 | 半導体装置、表示パネル、表示モジュール及び電子機器 |
| TWI730091B (zh) | 2016-05-13 | 2021-06-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| KR102446134B1 (ko) | 2016-07-29 | 2022-09-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 시스템, 및 전자 기기 |
| JP7330986B2 (ja) * | 2018-08-31 | 2023-08-22 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の動作方法 |
| JP2022076720A (ja) * | 2020-11-10 | 2022-05-20 | ソニーグループ株式会社 | 半導体装置 |
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- 2015-10-28 JP JP2015211423A patent/JP6780927B2/ja not_active Expired - Fee Related
- 2015-10-28 US US14/925,161 patent/US9793905B2/en not_active Expired - Fee Related
- 2015-10-30 TW TW104135839A patent/TWI676358B/zh not_active IP Right Cessation
- 2015-10-30 KR KR1020150152031A patent/KR20160051659A/ko not_active Ceased
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20160051659A (ko) | 2016-05-11 |
| US9793905B2 (en) | 2017-10-17 |
| JP2016092829A (ja) | 2016-05-23 |
| JP6780927B2 (ja) | 2020-11-04 |
| US20160126888A1 (en) | 2016-05-05 |
| TW201622357A (zh) | 2016-06-16 |
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