TWI675393B - 用於處理基板的背側之方法及工具 - Google Patents

用於處理基板的背側之方法及工具 Download PDF

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Publication number
TWI675393B
TWI675393B TW105135819A TW105135819A TWI675393B TW I675393 B TWI675393 B TW I675393B TW 105135819 A TW105135819 A TW 105135819A TW 105135819 A TW105135819 A TW 105135819A TW I675393 B TWI675393 B TW I675393B
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Taiwan
Prior art keywords
substrate
film
annealing
back side
chamber
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TW105135819A
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Chinese (zh)
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TW201727696A (zh
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喬瑟夫Ｍ 拉尼許
Joseph M. Ranish
亞倫穆爾 杭特
Aaron Muir Hunter
史瓦米奈森Ｔ 史林尼法森
Swaminathan T. Srinivasan
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美商應用材料股份有限公司
Applied Materials, Inc.
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    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/124—Preparing bulk and homogeneous wafers by processing the backside of the wafers
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    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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    • H10P14/6542—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by using coherent radiation, e.g. using a laser
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    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
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    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
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    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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    • H10P50/00—Etching of wafers, substrates or parts of devices
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    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
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    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Vapour Deposition (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
TW105135819A 2015-11-09 2016-11-04 用於處理基板的背側之方法及工具 TWI675393B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562252901P 2015-11-09 2015-11-09
US62/252,901 2015-11-09
US201662306150P 2016-03-10 2016-03-10
US62/306,150 2016-03-10

Publications (2)

Publication Number Publication Date
TW201727696A TW201727696A (zh) 2017-08-01
TWI675393B true TWI675393B (zh) 2019-10-21

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TW105135819A TWI675393B (zh) 2015-11-09 2016-11-04 用於處理基板的背側之方法及工具
TW108133596A TWI729498B (zh) 2015-11-09 2016-11-04 基板處理方法

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TW108133596A TWI729498B (zh) 2015-11-09 2016-11-04 基板處理方法

Country Status (7)

Country Link
US (1) US10128197B2 (https=)
JP (1) JP6971229B2 (https=)
KR (2) KR102742588B1 (https=)
CN (3) CN108352298B (https=)
DE (1) DE112016005136T5 (https=)
TW (2) TWI675393B (https=)
WO (1) WO2017083037A1 (https=)

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CN117223088A (zh) * 2021-04-27 2023-12-12 应用材料公司 用于半导体处理的应力与重叠管理
CN116058100B (zh) 2021-06-30 2025-12-30 长江存储科技有限责任公司 三维存储器装置及其形成方法
CN115803882B (zh) 2021-06-30 2026-04-24 长江存储科技有限责任公司 三维存储器装置及其形成方法
CN115812345A (zh) 2021-06-30 2023-03-17 长江存储科技有限责任公司 三维存储器装置及其形成方法
CN116058090B (zh) 2021-06-30 2026-04-14 长江存储科技有限责任公司 三维存储器装置及其形成方法
CN116368952A (zh) 2021-06-30 2023-06-30 长江存储科技有限责任公司 三维存储器装置及其形成方法
WO2023272638A1 (en) 2021-06-30 2023-01-05 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and methods for forming the same
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US12394618B2 (en) * 2021-07-08 2025-08-19 Tokyo Electron Limited Method of adjusting wafer shape using multi-directional actuation films
CN113906542A (zh) * 2021-08-30 2022-01-07 长江存储科技有限责任公司 使用背面膜层沉积和激光退火的晶圆应力控制
US12094726B2 (en) 2021-12-13 2024-09-17 Applied Materials, Inc. Adapting electrical, mechanical, and thermal properties of package substrates
JP7809596B2 (ja) * 2022-06-15 2026-02-02 キオクシア株式会社 接合装置、接合方法、及び半導体装置の製造方法
TW202431354A (zh) * 2022-09-28 2024-08-01 美商應用材料股份有限公司 應力管理期間全域曲率的校正
CN115642112A (zh) * 2022-11-24 2023-01-24 西安奕斯伟材料科技有限公司 一种用于硅片的背封装置及背封方法
US20250062247A1 (en) * 2023-08-14 2025-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Warpage Modulation Through Implantation and the Structures Thereof

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