TWI661871B - 基板處理裝置以及基板處理方法 - Google Patents
基板處理裝置以及基板處理方法 Download PDFInfo
- Publication number
- TWI661871B TWI661871B TW107102925A TW107102925A TWI661871B TW I661871 B TWI661871 B TW I661871B TW 107102925 A TW107102925 A TW 107102925A TW 107102925 A TW107102925 A TW 107102925A TW I661871 B TWI661871 B TW I661871B
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid
- processing
- valve
- processing liquid
- flow
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 334
- 239000000758 substrate Substances 0.000 title claims abstract description 162
- 238000003672 processing method Methods 0.000 title claims description 18
- 239000007788 liquid Substances 0.000 claims abstract description 481
- 238000001514 detection method Methods 0.000 claims abstract description 140
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 78
- 238000007599 discharging Methods 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 description 87
- 239000000243 solution Substances 0.000 description 82
- 238000010586 diagram Methods 0.000 description 21
- 239000003814 drug Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 238000005406 washing Methods 0.000 description 7
- 239000012530 fluid Substances 0.000 description 6
- 238000011010 flushing procedure Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000002940 repellent Effects 0.000 description 3
- 239000005871 repellent Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- MKIZYHRZLYBYKV-UHFFFAOYSA-J [K+].[K+].[OH-].[K+].[K+].[OH-].[OH-].[OH-] Chemical compound [K+].[K+].[OH-].[K+].[K+].[OH-].[OH-].[OH-] MKIZYHRZLYBYKV-UHFFFAOYSA-J 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-035048 | 2017-02-27 | ||
| JP2017035048 | 2017-02-27 | ||
| JP2017242942A JP6975630B2 (ja) | 2017-02-27 | 2017-12-19 | 基板処理装置および基板処理方法 |
| JP2017-242942 | 2017-12-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201834754A TW201834754A (zh) | 2018-10-01 |
| TWI661871B true TWI661871B (zh) | 2019-06-11 |
Family
ID=63528274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107102925A TWI661871B (zh) | 2017-02-27 | 2018-01-26 | 基板處理裝置以及基板處理方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6975630B2 (enExample) |
| KR (1) | KR102226378B1 (enExample) |
| CN (1) | CN110235226B (enExample) |
| TW (1) | TWI661871B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534452B (zh) * | 2018-11-08 | 2022-06-14 | 北京北方华创微电子装备有限公司 | 用于清洗工艺腔室的漏液监控装置及清洗工艺腔室 |
| JP7364460B2 (ja) | 2019-12-25 | 2023-10-18 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| JP7509657B2 (ja) | 2020-10-29 | 2024-07-02 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| TWI762072B (zh) * | 2020-12-08 | 2022-04-21 | 力晶積成電子製造股份有限公司 | 晶圓清洗機台 |
| DE102021100754A1 (de) * | 2021-01-15 | 2022-07-21 | Marco Systemanalyse Und Entwicklung Gmbh | Dosierventil |
| JP2024158822A (ja) * | 2023-04-28 | 2024-11-08 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009158597A (ja) * | 2007-12-25 | 2009-07-16 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| TWI404572B (zh) * | 2007-02-13 | 2013-08-11 | Musashi Engineering Inc | A liquid leakage detecting means and a liquid material applying means provided with the mechanism |
| JP2017034120A (ja) * | 2015-08-03 | 2017-02-09 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| JP2017034188A (ja) * | 2015-08-05 | 2017-02-09 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および処理液吐出方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2010521C3 (de) | 1969-03-11 | 1974-05-09 | Snam Progetti S.P.A., Mailand (Italien) | Vorrichtung zur gleichzeitigen und quantitativen Bestimmung der Detonation und Frühzündung |
| JPH0770507B2 (ja) * | 1989-07-05 | 1995-07-31 | 三菱電機株式会社 | 半導体ウエハ用洗浄装置 |
| JP3577580B2 (ja) * | 1998-03-17 | 2004-10-13 | 東京エレクトロン株式会社 | 空気駆動式液体供給装置 |
| JP3730079B2 (ja) * | 2000-03-21 | 2005-12-21 | 大日本スクリーン製造株式会社 | 基板処理装置 |
| CN101436001B (zh) * | 2003-07-28 | 2012-04-11 | 株式会社尼康 | 曝光装置、器件制造方法 |
| JP2006156672A (ja) * | 2004-11-29 | 2006-06-15 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| KR20100046784A (ko) * | 2008-10-28 | 2010-05-07 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| CN103295938B (zh) * | 2013-05-29 | 2017-10-10 | 上海华虹宏力半导体制造有限公司 | 半导体处理设备 |
| JP6059087B2 (ja) * | 2013-05-31 | 2017-01-11 | 東京エレクトロン株式会社 | 液処理装置、液処理方法および記憶媒体 |
| CN109037111B (zh) * | 2015-02-25 | 2022-03-22 | 株式会社思可林集团 | 基板处理装置 |
-
2017
- 2017-12-19 JP JP2017242942A patent/JP6975630B2/ja active Active
-
2018
- 2018-01-24 KR KR1020197022463A patent/KR102226378B1/ko active Active
- 2018-01-24 CN CN201880009209.0A patent/CN110235226B/zh active Active
- 2018-01-26 TW TW107102925A patent/TWI661871B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI404572B (zh) * | 2007-02-13 | 2013-08-11 | Musashi Engineering Inc | A liquid leakage detecting means and a liquid material applying means provided with the mechanism |
| JP2009158597A (ja) * | 2007-12-25 | 2009-07-16 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| JP2017034120A (ja) * | 2015-08-03 | 2017-02-09 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| JP2017034188A (ja) * | 2015-08-05 | 2017-02-09 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および処理液吐出方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201834754A (zh) | 2018-10-01 |
| CN110235226B (zh) | 2022-12-23 |
| KR102226378B1 (ko) | 2021-03-10 |
| CN110235226A (zh) | 2019-09-13 |
| JP6975630B2 (ja) | 2021-12-01 |
| KR20190100368A (ko) | 2019-08-28 |
| JP2018142694A (ja) | 2018-09-13 |
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