JP6975630B2 - 基板処理装置および基板処理方法 - Google Patents
基板処理装置および基板処理方法 Download PDFInfo
- Publication number
- JP6975630B2 JP6975630B2 JP2017242942A JP2017242942A JP6975630B2 JP 6975630 B2 JP6975630 B2 JP 6975630B2 JP 2017242942 A JP2017242942 A JP 2017242942A JP 2017242942 A JP2017242942 A JP 2017242942A JP 6975630 B2 JP6975630 B2 JP 6975630B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- valve
- treatment liquid
- pipe
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020197022463A KR102226378B1 (ko) | 2017-02-27 | 2018-01-24 | 기판 처리 장치 및 기판 처리 방법 |
| PCT/JP2018/002151 WO2018155054A1 (ja) | 2017-02-27 | 2018-01-24 | 基板処理装置および基板処理方法 |
| CN201880009209.0A CN110235226B (zh) | 2017-02-27 | 2018-01-24 | 基板处理装置以及基板处理方法 |
| TW107102925A TWI661871B (zh) | 2017-02-27 | 2018-01-26 | 基板處理裝置以及基板處理方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017035048 | 2017-02-27 | ||
| JP2017035048 | 2017-02-27 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018142694A JP2018142694A (ja) | 2018-09-13 |
| JP2018142694A5 JP2018142694A5 (enExample) | 2021-07-26 |
| JP6975630B2 true JP6975630B2 (ja) | 2021-12-01 |
Family
ID=63528274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017242942A Active JP6975630B2 (ja) | 2017-02-27 | 2017-12-19 | 基板処理装置および基板処理方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6975630B2 (enExample) |
| KR (1) | KR102226378B1 (enExample) |
| CN (1) | CN110235226B (enExample) |
| TW (1) | TWI661871B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534452B (zh) * | 2018-11-08 | 2022-06-14 | 北京北方华创微电子装备有限公司 | 用于清洗工艺腔室的漏液监控装置及清洗工艺腔室 |
| JP7364460B2 (ja) | 2019-12-25 | 2023-10-18 | 株式会社Screenホールディングス | 基板処理装置 |
| JP7509657B2 (ja) | 2020-10-29 | 2024-07-02 | 株式会社Screenホールディングス | 基板処理装置 |
| TWI762072B (zh) * | 2020-12-08 | 2022-04-21 | 力晶積成電子製造股份有限公司 | 晶圓清洗機台 |
| DE102021100754A1 (de) * | 2021-01-15 | 2022-07-21 | Marco Systemanalyse Und Entwicklung Gmbh | Dosierventil |
| JP2024158822A (ja) * | 2023-04-28 | 2024-11-08 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2010521C3 (de) | 1969-03-11 | 1974-05-09 | Snam Progetti S.P.A., Mailand (Italien) | Vorrichtung zur gleichzeitigen und quantitativen Bestimmung der Detonation und Frühzündung |
| JPH0770507B2 (ja) * | 1989-07-05 | 1995-07-31 | 三菱電機株式会社 | 半導体ウエハ用洗浄装置 |
| JP3577580B2 (ja) * | 1998-03-17 | 2004-10-13 | 東京エレクトロン株式会社 | 空気駆動式液体供給装置 |
| JP3730079B2 (ja) * | 2000-03-21 | 2005-12-21 | 大日本スクリーン製造株式会社 | 基板処理装置 |
| CN101436001B (zh) * | 2003-07-28 | 2012-04-11 | 株式会社尼康 | 曝光装置、器件制造方法 |
| JP2006156672A (ja) * | 2004-11-29 | 2006-06-15 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| JP5073310B2 (ja) * | 2007-02-13 | 2012-11-14 | 武蔵エンジニアリング株式会社 | 漏液検知機構およびそれを備えた液体材料塗布装置 |
| JP5030767B2 (ja) * | 2007-12-25 | 2012-09-19 | 大日本スクリーン製造株式会社 | 基板処理装置、および基板処理装置の異常処理方法 |
| KR20100046784A (ko) * | 2008-10-28 | 2010-05-07 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| CN103295938B (zh) * | 2013-05-29 | 2017-10-10 | 上海华虹宏力半导体制造有限公司 | 半导体处理设备 |
| JP6059087B2 (ja) * | 2013-05-31 | 2017-01-11 | 東京エレクトロン株式会社 | 液処理装置、液処理方法および記憶媒体 |
| CN109037111B (zh) * | 2015-02-25 | 2022-03-22 | 株式会社思可林集团 | 基板处理装置 |
| JP6534578B2 (ja) * | 2015-08-03 | 2019-06-26 | 株式会社Screenホールディングス | 基板処理装置 |
| JP6624599B2 (ja) * | 2015-08-05 | 2019-12-25 | 株式会社Screenホールディングス | 基板処理装置および処理液吐出方法 |
-
2017
- 2017-12-19 JP JP2017242942A patent/JP6975630B2/ja active Active
-
2018
- 2018-01-24 KR KR1020197022463A patent/KR102226378B1/ko active Active
- 2018-01-24 CN CN201880009209.0A patent/CN110235226B/zh active Active
- 2018-01-26 TW TW107102925A patent/TWI661871B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201834754A (zh) | 2018-10-01 |
| CN110235226B (zh) | 2022-12-23 |
| KR102226378B1 (ko) | 2021-03-10 |
| CN110235226A (zh) | 2019-09-13 |
| KR20190100368A (ko) | 2019-08-28 |
| TWI661871B (zh) | 2019-06-11 |
| JP2018142694A (ja) | 2018-09-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6975630B2 (ja) | 基板処理装置および基板処理方法 | |
| TWI671138B (zh) | 基板處理裝置及處理罩洗淨方法 | |
| KR102192767B1 (ko) | 기판 처리 장치 | |
| JP5030767B2 (ja) | 基板処理装置、および基板処理装置の異常処理方法 | |
| US8308870B2 (en) | Cleaning apparatus, cleaning method and recording medium | |
| JP6487168B2 (ja) | 基板処理装置および基板処理方法 | |
| TWI670765B (zh) | 基板處理裝置及基板處理方法 | |
| KR102378913B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
| JP6553353B2 (ja) | 基板処理方法及びその装置 | |
| JP7042704B2 (ja) | 基板処理装置および基板処理方法 | |
| JP5891065B2 (ja) | 基板処理装置および処理液吸引方法 | |
| JP5426301B2 (ja) | 基板処理装置 | |
| JP2016072609A (ja) | 基板処理方法および基板処理装置 | |
| JP4172769B2 (ja) | 基板処理装置および基板処理方法 | |
| JP6624599B2 (ja) | 基板処理装置および処理液吐出方法 | |
| WO2018155054A1 (ja) | 基板処理装置および基板処理方法 | |
| JP2007123393A (ja) | 基板処理装置 | |
| JP6148363B2 (ja) | 処理液供給方法 | |
| JP2011204948A (ja) | 処理液供給装置および処理液供給方法 | |
| JP2002158200A (ja) | 基板処理装置 | |
| KR20050022425A (ko) | 웨이퍼의 세정장치 및 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200622 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210510 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210520 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211007 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211108 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6975630 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |