CN110235226B - 基板处理装置以及基板处理方法 - Google Patents

基板处理装置以及基板处理方法 Download PDF

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Publication number
CN110235226B
CN110235226B CN201880009209.0A CN201880009209A CN110235226B CN 110235226 B CN110235226 B CN 110235226B CN 201880009209 A CN201880009209 A CN 201880009209A CN 110235226 B CN110235226 B CN 110235226B
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China
Prior art keywords
liquid
leakage
valve
processing liquid
substrate
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CN201880009209.0A
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English (en)
Chinese (zh)
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CN110235226A (zh
Inventor
中井仁司
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Priority claimed from PCT/JP2018/002151 external-priority patent/WO2018155054A1/ja
Publication of CN110235226A publication Critical patent/CN110235226A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN201880009209.0A 2017-02-27 2018-01-24 基板处理装置以及基板处理方法 Active CN110235226B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2017-035048 2017-02-27
JP2017035048 2017-02-27
JP2017242942A JP6975630B2 (ja) 2017-02-27 2017-12-19 基板処理装置および基板処理方法
JP2017-242942 2017-12-19
PCT/JP2018/002151 WO2018155054A1 (ja) 2017-02-27 2018-01-24 基板処理装置および基板処理方法

Publications (2)

Publication Number Publication Date
CN110235226A CN110235226A (zh) 2019-09-13
CN110235226B true CN110235226B (zh) 2022-12-23

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CN201880009209.0A Active CN110235226B (zh) 2017-02-27 2018-01-24 基板处理装置以及基板处理方法

Country Status (4)

Country Link
JP (1) JP6975630B2 (enExample)
KR (1) KR102226378B1 (enExample)
CN (1) CN110235226B (enExample)
TW (1) TWI661871B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110534452B (zh) * 2018-11-08 2022-06-14 北京北方华创微电子装备有限公司 用于清洗工艺腔室的漏液监控装置及清洗工艺腔室
JP7364460B2 (ja) 2019-12-25 2023-10-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP7509657B2 (ja) * 2020-10-29 2024-07-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
TWI762072B (zh) * 2020-12-08 2022-04-21 力晶積成電子製造股份有限公司 晶圓清洗機台
DE102021100754A1 (de) * 2021-01-15 2022-07-21 Marco Systemanalyse Und Entwicklung Gmbh Dosierventil
JP2024158822A (ja) * 2023-04-28 2024-11-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0338827A (ja) * 1989-07-05 1991-02-19 Mitsubishi Electric Corp 半導体ウエハ用洗浄装置
KR19990077948A (ko) * 1998-03-17 1999-10-25 히가시 데쓰로 공기구동식액체공급장치
JP2001267288A (ja) * 2000-03-21 2001-09-28 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2006156672A (ja) * 2004-11-29 2006-06-15 Dainippon Screen Mfg Co Ltd 基板処理装置
CN101436000A (zh) * 2003-07-28 2009-05-20 株式会社尼康 曝光装置、器件制造方法、及曝光装置的控制方法
JP2009158597A (ja) * 2007-12-25 2009-07-16 Dainippon Screen Mfg Co Ltd 基板処理装置
CN103295938A (zh) * 2013-05-29 2013-09-11 上海宏力半导体制造有限公司 半导体处理设备
JP2014236079A (ja) * 2013-05-31 2014-12-15 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
CN105914167A (zh) * 2015-02-25 2016-08-31 株式会社思可林集团 基板处理装置
JP2017034120A (ja) * 2015-08-03 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2017034188A (ja) * 2015-08-05 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および処理液吐出方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2010521C3 (de) 1969-03-11 1974-05-09 Snam Progetti S.P.A., Mailand (Italien) Vorrichtung zur gleichzeitigen und quantitativen Bestimmung der Detonation und Frühzündung
JP5073310B2 (ja) * 2007-02-13 2012-11-14 武蔵エンジニアリング株式会社 漏液検知機構およびそれを備えた液体材料塗布装置
KR20100046784A (ko) * 2008-10-28 2010-05-07 세메스 주식회사 기판 처리 장치 및 방법

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0338827A (ja) * 1989-07-05 1991-02-19 Mitsubishi Electric Corp 半導体ウエハ用洗浄装置
KR19990077948A (ko) * 1998-03-17 1999-10-25 히가시 데쓰로 공기구동식액체공급장치
JP2001267288A (ja) * 2000-03-21 2001-09-28 Dainippon Screen Mfg Co Ltd 基板処理装置
CN101436000A (zh) * 2003-07-28 2009-05-20 株式会社尼康 曝光装置、器件制造方法、及曝光装置的控制方法
JP2006156672A (ja) * 2004-11-29 2006-06-15 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2009158597A (ja) * 2007-12-25 2009-07-16 Dainippon Screen Mfg Co Ltd 基板処理装置
CN103295938A (zh) * 2013-05-29 2013-09-11 上海宏力半导体制造有限公司 半导体处理设备
JP2014236079A (ja) * 2013-05-31 2014-12-15 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
CN105914167A (zh) * 2015-02-25 2016-08-31 株式会社思可林集团 基板处理装置
JP2017034120A (ja) * 2015-08-03 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2017034188A (ja) * 2015-08-05 2017-02-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および処理液吐出方法

Also Published As

Publication number Publication date
TW201834754A (zh) 2018-10-01
KR20190100368A (ko) 2019-08-28
KR102226378B1 (ko) 2021-03-10
TWI661871B (zh) 2019-06-11
JP2018142694A (ja) 2018-09-13
JP6975630B2 (ja) 2021-12-01
CN110235226A (zh) 2019-09-13

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