TWI660410B - 用於準分子雷射退火之控制之監控方法及裝置 - Google Patents
用於準分子雷射退火之控制之監控方法及裝置 Download PDFInfo
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- TWI660410B TWI660410B TW104106291A TW104106291A TWI660410B TW I660410 B TWI660410 B TW I660410B TW 104106291 A TW104106291 A TW 104106291A TW 104106291 A TW104106291 A TW 104106291A TW I660410 B TWI660410 B TW I660410B
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Classifications
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- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mathematical Physics (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Thermal Sciences (AREA)
- Recrystallisation Techniques (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/195,656 | 2014-03-03 | ||
| US14/195,656 US9335276B2 (en) | 2014-03-03 | 2014-03-03 | Monitoring method and apparatus for control of excimer laser annealing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201539551A TW201539551A (zh) | 2015-10-16 |
| TWI660410B true TWI660410B (zh) | 2019-05-21 |
Family
ID=52596988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104106291A TWI660410B (zh) | 2014-03-03 | 2015-02-26 | 用於準分子雷射退火之控制之監控方法及裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9335276B2 (enExample) |
| JP (2) | JP6738279B2 (enExample) |
| KR (1) | KR102154495B1 (enExample) |
| CN (1) | CN106463367A (enExample) |
| TW (1) | TWI660410B (enExample) |
| WO (1) | WO2015132210A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9425121B2 (en) | 2013-09-11 | 2016-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated fan-out structure with guiding trenches in buffer layer |
| US9455211B2 (en) | 2013-09-11 | 2016-09-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated fan-out structure with openings in buffer layer |
| CN106198568B (zh) * | 2015-05-24 | 2019-03-12 | 上海微电子装备（集团）股份有限公司 | 一种具有透明基底的薄膜的测量装置及测量方法 |
| US9976969B1 (en) * | 2016-10-28 | 2018-05-22 | Coherent Lasersystems Gmbh & Co. Kg | Monitoring method and apparatus for excimer-laser annealing process |
| US10069273B1 (en) | 2017-03-02 | 2018-09-04 | Coherent Lasersystems Gmbh & Co. Kg | Lasing-gas mixture for excimer laser |
| CN107421638B (zh) * | 2017-08-25 | 2019-09-06 | 西京学院 | 一种光学衍射模拟方法及其装置 |
| JP2019047058A (ja) * | 2017-09-06 | 2019-03-22 | 株式会社ブイ・テクノロジー | 結晶化モニタ方法、レーザアニール装置、およびレーザアニール方法 |
| CN107677686B (zh) * | 2017-09-28 | 2021-01-26 | 京东方科技集团股份有限公司 | 光线透过窗集成装置及采用该装置的设备 |
| TWI672493B (zh) * | 2018-03-07 | 2019-09-21 | 由田新技股份有限公司 | 用於檢測面板斑紋的光學檢測系統及其方法 |
| GB2571997B (en) * | 2018-03-16 | 2021-10-27 | X Fab Texas Inc | Use of wafer brightness to monitor laser anneal process and laser anneal tool |
| GB2587691B (en) * | 2018-03-16 | 2022-02-09 | X Fab Texas Inc | Use of wafer brightness to monitor laser anneal process and laser anneal tool |
| JP7219590B2 (ja) * | 2018-10-30 | 2023-02-08 | 浜松ホトニクス株式会社 | レーザ加工装置 |
| KR102688794B1 (ko) * | 2019-01-11 | 2024-07-29 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
| US10832635B2 (en) * | 2019-03-12 | 2020-11-10 | Himax Display, Inc. | Display apparatus having display panel and humidity detection method thereof and gamma curve calibration method thereof |
| CN110993491B (zh) * | 2019-12-19 | 2023-09-26 | 信利(仁寿)高端显示科技有限公司 | 一种准分子激光退火制程oed的自动校正方法 |
| JP7542350B2 (ja) * | 2020-07-21 | 2024-08-30 | Ｊｓｗアクティナシステム株式会社 | レーザアニール装置、レーザアニール方法、及び半導体装置の製造方法 |
| KR20220022016A (ko) * | 2020-08-14 | 2022-02-23 | 삼성디스플레이 주식회사 | 디스플레이 장치의 제조 장치 및 디스플레이 장치의 제조 방법 |
| US12148615B2 (en) | 2021-05-06 | 2024-11-19 | Coherent Lasersystems Gmbh & Co. Kg | Method and apparatus for laser annealing |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201405632A (zh) * | 2012-06-22 | 2014-02-01 | Coherent Lasersystems Gmbh & Co Kg | 用於準分子雷射退火處理之監測方法及裝置 |
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| JPS60263642A (ja) * | 1984-06-12 | 1985-12-27 | Nippon Seiko Kk | パタ−ン原図自動読取り装置 |
| US4806018A (en) | 1987-07-06 | 1989-02-21 | The Boeing Company | Angular reflectance sensor |
| US4810047A (en) | 1988-02-16 | 1989-03-07 | Grumman Aerospace Corporation | In-line holographic lens arrangement |
| US5432607A (en) | 1993-02-22 | 1995-07-11 | International Business Machines Corporation | Method and apparatus for inspecting patterned thin films using diffracted beam ellipsometry |
| US5473426A (en) | 1993-03-05 | 1995-12-05 | Nikon Corporation | Defect inspection apparatus |
| JP3342387B2 (ja) | 1997-02-28 | 2002-11-05 | 三洋電機株式会社 | 半導体膜の評価方法、評価装置及び形成方法 |
| JP2001110861A (ja) | 1999-10-06 | 2001-04-20 | Seiko Epson Corp | 半導体膜の検査方法、薄膜トランジスタの製造方法、および半導体膜の検査装置 |
| WO2001061734A1 (en) | 2000-02-15 | 2001-08-23 | Matsushita Electric Industrial Co., Ltd. | Non-single crystal film, substrate with non-single crystal film, method and apparatus for producing the same, method and apparatus for inspecting the same, thin film transistor, thin film transistor array and image display using it |
| US6429943B1 (en) | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
| US6864971B2 (en) | 2001-03-27 | 2005-03-08 | Isoa, Inc. | System and method for performing optical inspection utilizing diffracted light |
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2014
- 2014-03-03 US US14/195,656 patent/US9335276B2/en active Active
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2015
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- 2015-03-02 WO PCT/EP2015/054326 patent/WO2015132210A1/en not_active Ceased
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TW201405632A (zh) * | 2012-06-22 | 2014-02-01 | Coherent Lasersystems Gmbh & Co Kg | 用於準分子雷射退火處理之監測方法及裝置 |
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| JP6738279B2 (ja) | 2020-08-12 |
| JP2017512382A (ja) | 2017-05-18 |
| CN106463367A (zh) | 2017-02-22 |
| KR20160127768A (ko) | 2016-11-04 |
| WO2015132210A1 (en) | 2015-09-11 |
| JP2019169732A (ja) | 2019-10-03 |
| KR102154495B1 (ko) | 2020-09-10 |
| US20150247808A1 (en) | 2015-09-03 |
| US20160233116A1 (en) | 2016-08-11 |
| TW201539551A (zh) | 2015-10-16 |
| US10121687B2 (en) | 2018-11-06 |
| US9335276B2 (en) | 2016-05-10 |
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