TW201248692A - Examination method and device for poly-silicon thin film - Google Patents

Abstract

The subject of the present invention is to optically observe the surface status of poly-silicon thin film and to examine the crystallization status of the poly-silicon thin film. To solve the problem, the substrate examining part of the poly-silicon examining device comprises: an illuminating means for illuminating the substrate with a surface formed thereon poly-silicon thin film; a first camera means for photographing the optical image of the first once diffraction light produced in the first direction of the substrate illuminated by the illumination means; a second camera means for photographing the optical image of the second once diffraction light produced in the second direction of the substrate illuminated by the illumination means; and a signal processing and determination means for processing the signals of both the optical images of the first once diffraction light photographed by the first camera means and the optical images of the second once diffraction light photographed by the second camera means, so as to determine the crystallization status of the poly-silicon thin film formed on the substrate.

Description

201248692 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to laser annealing and polycrystallization and apparatus. [Prior Art] A liquid crystal display element or a body (TFT) is used in the field of crystallization for a part of crystal germanium. In this manner, when the amorphous film is annealed and polycrystallized, it is due to the situation of the laser light source. In this case, in the case of monitoring the patent document 1, the laser annealing is performed, and the reflection from the substrate is reflected by the lightning. The semiconductor film is confirmed, and in the patent document, the inspection light is irradiated and the laser is irradiated. The method of inspecting the crystalline state of the polycrystalline germanium film formed by the amorphous germanium formed on the substrate from the laser irradiation front region], and the thin film transistor used in the organic EL device or the like ensures the local velocity operation. The non-excimer laser formed on the substrate is subjected to low-temperature annealing, and a part of the multi-mass is formed to carry out low temperature by a pseudo-molecular laser. Although it is required to be uniformly polycrystallized, the influence of the change may cause crystallization to occur. The method of staggering the occurrence state of the crystallization of the ruthenium is such that the pulsed laser is irradiated onto the semiconductor film, and the inspection light is irradiated to the field of the irradiation, and the inspection light is detected, and the crystallization state is changed according to the intensity of the reflected light. . In the second section, it is described that the reflected light or the transmitted light is measured for the amorphous state before the laser irradiation, and the reflected light or the transmitted light is detected even when the light is examined for the amorphous light, and the reflected light or the transmitted light in the laser irradiation. When the difference between the light intensity -5 - 201248692 degrees becomes the maximum time until the intensity of the reflected light or the transmitted light before the laser irradiation changes, the state of the laser annealing is monitored. Further, in Patent Document 3, it is described that by subjecting an amorphous germanium formed on a substrate to excimer laser annealing, in the field in which polycrystalline germanium has been changed, the surface of the substrate is irradiated from 10-85 degrees. In the visible light, the reflected light is detected by a camera grounded at the same angle as the illumination, and the arrangement state of the convex surface of the crystal surface is checked based on the change of the reflected light. Further, Patent Document 4 describes that a polycrystalline germanium film formed by irradiating an amorphous germanium film with an excimer laser is irradiated with inspection light to monitor a diffracted light from a polycrystalline germanium film by a diffracted photodetector. The intensity of the diffracted light generated from the field of the regular fine concavo-convex structure having high crystallinity of the polycrystalline germanium film is higher than the intensity of the diffracted/scattered light from the field of low crystallinity, and the state of the polycrystalline germanium film is examined. . [PRIOR ART DOCUMENT] [Patent Document 1] JP-A-2002-3 05 1 46 (Patent Document 2) Japanese Patent Laid-Open No. Hei 44-62 No. 1 (Patent Document 3) [Patent Document 4] Japanese Laid-Open Patent Publication No. 2001-308009. SUMMARY OF THE INVENTION [Problem to be Solved by the Invention] A film of amorphous germanium is irradiated with a quasi-molecular laser and annealed to form a -6 -

Periodically, fine irregularities are formed on the surface of the polycrystalline germanium film (polycrystalline germanium film) of S 201248692, which is known. Then, the fine protrusions reflect the degree of crystallinity of the polycrystalline germanium film, and the surface of the polycrystalline germanium film having a uniform crystal state (tith crystal grain size) is finely formed with irregularities periodically. It is known that the surface of the polycrystalline tantalum film having a low crystallinity (low polycrystalline grain size is irregular) is formed with irregular fine irregularities. In this way, as a method of inspecting the surface state of the polycrystalline silicon thin film which is reflected in the reflected light, the patent document 1 only describes the semiconductor film which is confirmed by the intensity change of the reflected light which is irradiated to the light in the field of the laser annealing. In the crystallization state, there is no description of the diffracted light that detects the crystal state. Further, in Patent Document 2, the reflected light from the laser irradiation field and the reflected light before the annealing are compared in the laser annealing to monitor the progress state of the annealing, and the patent document 1 does not describe the detection. The measurement will reflect the diffracted light in the crystalline state. On the other hand, in Patent Document 3, it is described that the crystal quality of the polycrystalline silicon is examined by the change in the light reflected by the convex arrangement on the surface of the polycrystalline silicon thin film formed by the laser annealing, but the detection is not described. A diffracted light produced by a projection on the surface of a polycrystalline silicon film. Further, in Patent Document 4, although the diffracted light generated by detecting the protrusion of the surface of the polycrystalline silicon film formed by the laser annealing is described, it monitors the winding measured by the diffracted photodetector. The state of the intensity of the light is examined to check the state of the polycrystalline germanium film. The image of the surface of the polycrystalline germanium film 201248692 is not described to observe the state of the bumps in the field of the surface of the polycrystalline germanium film. SUMMARY OF THE INVENTION The object of the present invention is to solve the problems of the prior art described above, and to provide a method and apparatus for inspecting a polycrystalline germanium film which can detect the state of the surface of a polycrystalline germanium film by observing the image of the surface of the polycrystalline germanium film. [Means for Solving the Problems] In the present invention, a polycrystalline silicon film inspection apparatus including a substrate loading unit, a substrate inspection unit, a substrate unloading unit, and an overall control unit is provided. The first illumination means is for irradiating a substrate having a polycrystalline germanium film on a surface thereof, and irradiating the first wavelength of light from the first direction; and the second illumination means for using the first illumination means for the substrate Irradiating the light of the first wavelength to illuminate the light of the second wavelength from the second direction; and the first imaging means for capturing the light of the first wavelength from the first illumination means and the second illumination means The optical image of the first primary diffracted light caused by the light of the first wavelength generated by the substrate of the first wavelength light toward the third direction; and the second imaging means for imaging, from the first illumination means and the first illumination means (2) The illumination means irradiates the optical image of the second-order diffracted light caused by the light of the second wavelength generated by the light of the first wavelength and the light of the second wavelength toward the fourth direction; and the signal processing The determining means is for processing the signal obtained by capturing the optical image of the first-order diffracted light by the first imaging means and the signal obtained by capturing the optical image of the second-order diffracted light by the second imaging means. To determine the crystalline state of the polysilicon film formed on the substrate. In order to solve the above problem, the present invention relates to a polysilicon film inspection apparatus including a substrate mounting unit, a substrate inspection unit, a substrate unloading unit, and an overall control unit. The substrate inspection unit is configured to The illumination means is for irradiating light onto a substrate on which a polycrystalline silicon film is formed on the surface, and the first imaging means is for photographing, and the first substrate is irradiated with light by the illumination means, and the first direction is generated once. An optical image of the diffracted light; and a second imaging means for capturing an optical image of the second-order diffracted light generated by the substrate irradiated with light by the illumination means in the second direction: and a signal processing/determination means The signal obtained by capturing the optical image of the first diffracted light by the first imaging means and the signal obtained by capturing the optical image of the second-order diffracted light by the second imaging means are processed to determine that the signal is formed. The crystalline state of the polycrystalline germanium film on the substrate. In order to solve the above problem, in the present invention, a method for inspecting a polycrystalline silicon thin film is designed such that a substrate having a polycrystalline germanium film formed on its surface is irradiated with light of a first wavelength from a first direction; In the field of the light of the wavelength, the light of the second wavelength is irradiated from the second direction: the light of the first wavelength generated by the light irradiated by the light of the first wavelength and the light of the second wavelength toward the third wavelength The first optical image of the diffracted light is imaged, and the second-order winding is caused by the light of the second wavelength generated by the substrate irradiated with the light of the first wavelength and the light of the second wavelength toward the fourth direction. The optical image of the light is photographed; the signal obtained by taking the optical image of the first diffracted light and the signal obtained by taking the optical image of the second diffracted light are processed to determine the polysilicon film formed on the substrate. Crystal state. -9- 201248692 Further, in order to solve the above problem, in the present invention, a method for inspecting a polycrystalline silicon thin film is designed such that a substrate having a polycrystalline germanium film formed on the surface thereof is irradiated with light; and the substrate irradiated with the light is directed toward the first The optical image of the first diffracted light generated in one direction is imaged; the optical image of the second-order diffracted light generated from the substrate illuminated by the light is directed to the second direction: the first time is taken The signal obtained by the optical image of the diffracted light and the signal obtained by the optical image of the second-order diffracted light are processed to determine the crystal state of the polycrystalline germanium film formed on the substrate. Further, in order to solve the problems of the prior art, in the present invention, the polycrystalline silicon thin film inspection device is designed to include a light irradiation means for optically transparently forming a substrate on which a polycrystalline silicon film is formed, from the substrate. One side of the one side emits light; and the imaging means is used for photographing, and the light irradiated from one side of the substrate by the light irradiation means penetrates the substrate and the polysilicon film and emits light from the other side of the substrate. On the other hand, the image of the primary diffracted light; and the image processing means process the image of the primary diffracted light obtained by the imaging means to check the crystal state of the polycrystalline silicon film; and the output means are processed by the image processing means The image of the once diffracted light is displayed on the screen together with the information of the inspection result; the optically transparent substrate on which the polycrystalline silicon film is formed on the surface, the light is emitted from one side of the substrate, and the substrate is emitted from the substrate. One of the light irradiated by one side penetrates the substrate and the polysilicon film and emits light from the other side of the substrate. An image of the primary diffracted light on the other side is generated, and an image of the once diffracted light obtained by the photographing is processed to check the crystal state of the polycrystalline germanium film, and the image of the processed once diffracted light is examined.

S -10- 201248692 Results of the results' are displayed together on the screen. [Effect of the Invention] According to the present invention, it is possible to easily determine whether or not the energy of the excimer laser irradiated during annealing is suitable or not based on the crystal state of the polycrystalline silicon thin film formed by annealing by a excimer laser. Further, by controlling the irradiation energy based on the determined result, the high quality of the glass substrate for a liquid crystal display panel can be maintained. [Embodiment] As an embodiment of the present invention, an example of an apparatus for inspecting a polycrystalline germanium film formed in a glass substrate for a liquid crystal display panel will be described. A glass substrate for a liquid crystal display panel (hereinafter referred to as a substrate) to be inspected is a film in which an amorphous crucible is formed on the substrate. By irradiating the excimer laser and scanning in a part of the amorphous germanium film, the amorphous germanium irradiated by the excimer laser is heated and melted (annealed) after being scanned by the excimer laser The molten amorphous germanium will slowly cool and polycrystallize 'the crystal will grow into a polycrystalline state. The graph of Fig. 1 shows that the irradiation energy of the excimer laser when the amorphous sand is annealed by a pseudo-molecular laser is slightly related to the crystal grain size of the polycrystalline germanium. When the irradiation energy of the excimer laser at the time of annealing becomes large, the crystal grain size of the polycrystalline silicon is also increased.

In the case where the irradiation energy of the excimer laser during annealing is weak (Fig. 1 @ 81 A ), as shown in Fig. 2A, the crystal size of the polycrystalline tantalum film 201 -11 - 201248692 is small, and the variation is large. State. In such a crystalline state, the polycrystalline tantalum film cannot obtain the characteristics of the spike. On the other hand, when the energy of the excimer laser during annealing is set to an appropriate range (range B in Fig. 1), as shown in Fig. 2B, a polycrystalline germanium film having a relatively uniform particle diameter of the crystal 02 can be formed. As described above, when a film having a crystal grain size is obtained, the polycrystalline ruthenium film can obtain stable characteristics. If the irradiation energy of the excimer laser at the time of annealing is further increased (range C in Fig. 1), the crystal grain size of the polycrystalline germanium will become larger. However, the larger the irradiation energy, the more the difference in the growth rate of the crystal grains changes, and the polycrystalline tantalum film having a large difference in particle diameter of the crystal 203 as shown in Fig. 2C can be obtained, and the polycrystalline tantalum film can obtain stable characteristics. Therefore, it is important that the energy of the excimer laser that irradiates the amorphous germanium is maintained in the range of B of Fig. 1. On the other hand, as described in Patent Document 3, it is conventional to form microscopic projections in a crystal grain boundary in a polycrystalline germanium film formed by annealing an amorphous germanium by a quasi-molecular laser. When the glass substrate 10 on which the polycrystalline germanium film 301 is formed is irradiated with light from the light source 3 10 disposed on the back side as shown in FIG. 3, the micro bumps 3 of the crystal grain boundary of the polycrystalline germanium film 3 0 1 are formed. The light scattered by 02 generates diffracted light on the surface side of the glass substrate 10. The position at which the diffracted light is generated differs depending on the wavelength of the light irradiated from the light source 310 or the pitch of the micro bumps 032 formed on the crystal grain boundaries of the polysilicon film 301. In the configuration shown in Fig. 3, the wavelength of the light that illuminates the substrate 300 is entered, and the micro bumps formed on the crystal grain boundaries of the polycrystalline germanium film 3 0 1 are formed.

The spacing of -12-S 201248692 3 02 is p, so that the angle of the light illuminating the substrate 300 from the normal direction of the substrate 3 is 0i, so that the primary diffracted light generated from the substrate 300 is from the normal of the substrate 300. When the angle from the direction is θ 〇, the following relationship is established between these: sin0i+sin0o= λ/Ρ (number 1) Therefore, the micro bumps formed on the crystal grain boundary of the polycrystalline germanium film 3 0 1 3 02 is a primary diffracted light which is emitted from the light source 3 i 〇 and is emitted from the light of the wavelength Λ irradiated in the direction of the angle 0 i in a state where the predetermined distance ρ is formed, and is disposed at an angle of 0 〇. The camera 320 of the camera performs observation to observe the primary diffracted light from the polycrystalline film 310. On the other hand, the crystal grain size of the polycrystalline germanium film 301 depends on the irradiation energy of the excimer laser during annealing as shown in FIG. 1, and the irradiation energy of the excimer laser of FIG. 1 is at A, Β, and C. In the field of the crystal, the crystal grain size becomes larger as the irradiation energy of the excimer laser increases. Therefore, if the irradiation energy of the quasi-molecular laser during annealing changes, the crystal grain size of the polycrystalline silicon film 30 1 changes, and as shown in Fig. 2A to Fig. 2C, the variation of the particle size becomes large. When the polycrystalline germanium film 3 0 in a state where the crystal grain size is changed and the pitch of the micro bumps 302 becomes large, the light is irradiated from the light source 3 1 0, due to the first winding from the polycrystalline germanium film 3 0 1 Once the direction of travel of the light is changed, the intensity is mainly lowered, so that the brightness of the primary diffracted light measured by the camera 320 is reduced. In this way, the brightness of the primary diffracted light is reduced and the detection intensity of the primary diffracted light by the camera 320 is lowered, as shown in FIG. 4, when the irradiation energy of the excimer laser during annealing is changed in a large direction. When the total crystal grain size of the polycrystalline germanium film of the 13-201248692 polycrystalline silicon film is increased, the irradiation energy of the excimer laser during annealing is changed in a small direction, and the crystal grain size of the polycrystalline germanium film 3 0 1 is caused to be large. The same happens every hour. Therefore, it is difficult to determine whether the crystal grain size of the polycrystalline tantalum film 310 is large or small, only by the intensity of the detected light of the diffracted light made by the camera 3208. In order to solve this problem, as shown in FIG. 5, two detection systems having different detection characteristics for the diffracted light from the microscopic protrusions 310 of the polycrystalline germanium film 3 0 are set, and the outputs of the respective detection systems are used to detect The state of change of the crystal grain size of the polycrystalline ruthenium film 310 may be measured.

That is, as shown in FIG. 5, the detection characteristic of the first detection system obtained by determining the complex measurement 値 by the irradiation energy of the excimer laser at the time of annealing is assumed to be a quadratic function distribution. For f ( X ), let the detection characteristic of the second detection system be g ( X ), and be IJ f ( X ) = a ( X - α ) 2 + b where a'b is a constant 'α is When f(x) is maximum, 乂値g(x) = c ( χ- β ) 2 + d where 'c'd is a fixed number, and is not the time when g(x) is the largest. EV(X), which is a composite function of f(x) and g(x), is defined as follows: EV ( χ ) = -cf ( χ ) + ag ( χ ) = -2ac ( β - a ) χ + ac ( β 2-a2) + c ( db) ... (number 2), that is, ' EV ( x ) can be expressed by a linear function of x, for example, as shown in Fig. 6 'thus by detecting f(JC) ) When 14 - 201248692 EV ( χ ) is obtained from g(x), the irradiation energy x of the excimer laser can be uniquely obtained. In the present invention, the image of the diffracted light generated by the micro bumps on the surface of the film is imaged by illuminating the polycrystalline germanium film, and the image of the diffracted light obtained by the film is processed to check whether a polycrystalline germanium film is formed on the substrate. A normal film having a crystal grain size in a neat state provides a method and apparatus for evaluating the crystal state of the polycrystalline silicon film. The embodiments of the present invention will be described below using the drawings. [Embodiment 1] The overall configuration of the polysilicon film inspection apparatus 700 for a glass substrate for a liquid crystal display panel according to the present invention is shown in Fig. 7. The polycrystalline sand film inspection apparatus 700 is composed of a substrate loading unit 710, a inspection unit 720, a substrate unloading unit 73 0, an inspection unit data processing/control unit 740, and an overall control unit 750. A glass substrate (hereinafter referred to as a substrate) 300 for a liquid crystal display panel to be inspected is a film of amorphous germanium which has been formed on the glass substrate 300, and is a part of the work before the inspection work. The field-exposed excimer laser is scanned and heated, and the heated region is annealed to change from an amorphous state to crystallization, and as shown in FIG. 3, it becomes a state of the polycrystalline germanium film 3 0 1 . The polysilicon film inspection apparatus 700 detects the surface of the substrate 300 to investigate whether or not the polysilicon film 301 is normally formed. The substrate 300 to be inspected is placed on the loading unit 710 by a transport means (not shown). The substrate 300 which is set to the loading unit 710 is sent to the inspection unit 720 by means of a transport means indicated by the position controlled by the overall control unit 750 by -15-201248692. The inspection unit is provided with an inspection unit 721, and the inspection data processing/control unit 740 controls the state of the polysilicon film formed on the surface of the 300. The data which has been inspected by the inspection unit 721 is processed by the inspection data processing control unit 740, and the state of the polycrystalline silicon film 3 0 1 formed on the surface of the substrate 300 is evaluated. The substrate 300 that has been inspected is transported from the inspection unit 720 to the unloading unit by a transport means (not shown) that is controlled by the entire control unit 750, and is taken out from the inspection apparatus 700 by a take-out unit (not shown). In FIG. 7, although the inspection unit 721 of the inspection unit 720 is illustrated as having only one stage, it may be two units depending on the size of the substrate 300 to be inspected or the area or arrangement of the polysilicon film 301. Or more than Taiwan. The configuration of the inspection unit 721 in the inspection unit 72 0 is shown in Fig. 8 . The inspection unit 72 1 is composed of an illumination optical system 810, an imaging optical system, a substrate platform unit 830, and an inspection unit data processing/control unit 840, and an inspection unit data processing/control unit 840 is shown in FIG. The whole department is connected to 75 0. The illumination optical system 8.1 includes a first light source 8 1 1 that emits the first wavelength λ 1 and a first reflection that changes the optical path of the first wave emitted from the first light source 8 1 1 Mirror 8 1 2, illuminating the light having the first wavelength λ 1 of the optical path changed by the first lens 8 1 2 and illuminating the light to the substrate 3 00 held on the substrate platform portion 83 0 The first cylindrical lens 8 1 3, the emission wavelength is higher than the first wave: i is transferred to the substrate to be inspected and estimated to be controlled 730. In addition, the formation of 3 820 constitutes the control line k λ 1 1 reversely forms the glass: λ 1 - 16-201248692 The second light source 8 1 4 of the light of the second wavelength λ 2 and the second mirror 8 1 4 of the light of the second wavelength Α 2 emitted from the second light source 814 are changed. The light having the second wavelength Λ 2 which has been changed by the second mirror 815 to the optical path is condensed to form a linear light and then irradiated to the first wavelength λ of the glass substrate 300 held on the substrate land portion 830. The second cylindrical lens 816 for the light irradiation field. The light of the first wavelength λ 与 and the light of the second wavelength λ 2 are light having a wavelength in the range of 300 nm to 700 nm, and for example, a laser diode is used for the first light source 811 and the second light source 8 1 4 . The first cylindrical lens 81 3 is a first wavelength that is transmitted from the first light source 8 1 1 and is changed by the first mirror 8 1 2 through the optical path; the light of I 1 is made to conform to the substrate 300 The size of the field is checked to efficiently illuminate, and the illumination beam is concentrated in one direction to form a cross-sectional shape having a long line shape in one direction. The light condensed in one direction by the first cylindrical lens 813 is irradiated toward the substrate 300 at an angle of β 1 in the normal direction to increase the amount of illumination light in the inspection area on the substrate 300. A camera optics 820 can be used to detect higher contrast images. The second cylindrical lens 816 is also a light having a second wavelength Λ2 that is transmitted from the second light source 814 and is changed by the second mirror 815 to the optical path, so as to conform to the first cylindrical surface on the substrate 300. The lens 8 1 3 illuminates the inspection field of the light of the first wavelength λ 1 to efficiently illuminate, and condenses the illumination beam in one direction to form a cross-sectional shape having a long line shape in one direction. The light condensed in one direction by the second cylindrical lens 8 1 6 is irradiated toward the substrate 300 at an angle of 0 2 from the normal direction to increase the substrate 3 0 0 by -17-201248692. By examining the amount of illumination in the field, the camera optics 820 can be used to detect higher contrast images. The imaging optical system 820 includes a first wavelength selection filter 821 that selectively transmits light of a first wavelength, and a light that passes through a first wavelength of the first wavelength selection filter 821. The first camera 823 of the first imaging lens system 8 2 2 that images the image caused by the primary diffracted light generated by the substrate 300 is provided with a second wavelength selective filter 8 that selectively transmits light of the second wavelength. And a second imaging lens system 8 2 5 which images the image of the primary diffracted light generated by the substrate 300 caused by the light passing through the second wavelength of the second wavelength selection filter 8 24 The second camera 82 6 . The wavelength selection filter 821 selectively passes light of the first wavelength among the diffracted light from the substrate 300, and cuts light rays of wavelengths other than the light of the first wavelength from the substrate 300 and the periphery. Similarly, the wavelength selection filter 823 selectively passes light of the second wavelength among the diffracted light from the substrate 300, and cuts light of a wavelength other than the light of the second wavelength from the substrate 300 and the periphery. . The first camera 8 2 3 is disposed in an angular direction inclined by 03 to the normal direction of the substrate 300. The first camera 823 photographs a polycrystalline sand film 30 which is illuminated by the light of the first wavelength λ 1 formed by the first cylindrical lens 8 1 3 and which is present in the direction of the surface of the substrate 300 in the elongated direction. An optical image formed by the primary diffracted light emitted by the minute protrusions 312 formed at a pitch Ρ 1 on the crystal grain boundary of 1. The first camera 823 is provided with a field in which the substrate 300 is illuminated in one direction.

S -18- 201248692 One-dimensional CCD (Charge Coupled Device) image sensor (not shown) or 2-dimensional CCD image sensor (not shown) configured as image, ie, the first camera The inclination angle 0 3 of 8 2 3 is the pitch P 1 of the micro bumps 3 0 2 of the crystal grain boundary of the polycrystalline germanium film 310, and the wavelength λΐ of the light of the first wavelength, and the light of the first wavelength The incident angle Θ1 of the substrate 300 is determined based on the relationship of the number 1. The second camera 826 is disposed in the angular direction of the inclination 04 of the normal direction of the substrate 300. The second camera 826 is photographed, and the light of the second wavelength λ2 irradiated by the second cylindrical lens 816 and the crystal grain boundary of the polycrystalline silicon film 301 which is present in the field of the substrate 3 are elongated at a pitch Ρ2 An optical image formed by the primary diffracted light emitted by the formed micro protrusions 032. The second camera 826 is provided with a one-dimensional CCD (Charge Coupled Device) image sensor (not shown) that is disposed in accordance with the field in which the substrate 300 is illuminated in one direction, or two. CCD image sensor (not shown). That is, the tilt angle θ4 of the second camera 826 is the pitch Ρ2 of the micro bumps 203 of the crystal grain boundary of the polycrystalline germanium film 301, and the wavelength λ 2 of the light of the second wavelength and the light of the second wavelength. The incident angle 02 to the substrate 300 is determined based on the relationship of the number 1. At this time, if the wavelength λ 1 of the light of the first wavelength is set to be longer than the wavelength of the light of the second wavelength; I 2 is shorter, and the pitch Ρ 1 of the micro bumps 322 is set to be smaller than the pitch of the micro bumps 322 Ρ2 is still small, and the incident angle 0 1 of the light of the first wavelength to the substrate 300 is set to be larger than the incident angle 0 2 of the light of the second wavelength incident on the substrate 300, and then the first camera 8 2 3 - 19-201248692 The tilt angle 0 3 can be set to be sufficiently smaller than the tilt angle 04 of the second camera 820, and the first camera 823 and the second camera 826 can be disposed not to interfere with each other above the substrate stage 831. Further, the first camera 823 is placed at a position at which the primary diffracted light from the minute projections 312 of the pitch P1 is detected, and the second camera 826 is placed at a position where the microprotrusions 3 0 2 from the pitch P 2 are detected. The position of the diffracted light, whereby two characteristic curves having different peak-to-peak positions as shown in FIG. 5 can be obtained from the detection signals of the respective cameras, and the first-order function EV (X) as shown in FIG. 6 can be obtained. Relationship. The substrate platform portion 830 is placed on the upper surface of the stage 831 that can be moved by the driving means 83 2 in the XY plane, and the substrate 300 to be inspected is placed. The driving means 8 3 2 may be, for example, a servo motor including a stepping motor or a rotary encoder. The inspection data processing and control unit 840 includes an A/D conversion unit 841 that converts the analog video signal output from the first camera 823 into a digital video signal, and converts the analog video signal output from the second camera 826 into a digital position. The A/D conversion unit 842 of the video signal performs the A/D conversion of the digital video signal that has been A/D-converted by the A/D conversion unit 84 1 and the A/D conversion unit 842, and is calculated by using the number 1 calculation. The calculation unit 843 for the energy of the excimer laser of the polycrystalline germanium film 301 on the substrate 300, and the calculation unit 843 obtains and visualizes the distribution of the irradiation energy of the excimer laser in each field on the substrate 300. The determination unit 844 includes an input/output unit 845 of the display unit 845 1 that displays the result of the processing by the processing determination unit 844, and a power supply unit 846 for the first light source 811 and the second light source 814.

S -20-201248692, drive means control unit 847 for controlling the substrate platform portion 83 0, control calculation unit 843, processing determination unit 844, output unit 845, power supply unit 846, and drive means control unit 847 Control unit 848. Moreover, the control unit 847 is connected to the drizzle overall control unit 75 0. By configuring the illumination optical system 810 to illuminate the substrate 300 placed on the substrate stage 831 from the back side, the image of the primary diffracted light generated by the light transmitted through the substrate 300 is imaged by the imaging optical system 8 20 . Photographing is performed to inspect the data processing and control unit 840 to perform processing to check the crystal state of the polysilicon film 301 which has been formed on the substrate 300. Next, a method of detecting the state of the polycrystalline germanium film 301 which is annealed by the excimer laser on the substrate 300 by using the inspection unit 721 having the configuration shown in Fig. 8 will be described. First, the flow of the inspection field of the polycrystalline germanium film 301 formed by excimer laser annealing on the substrate 300 will be examined. The inspection process includes a predetermined area or a comprehensive imaging program for taking the substrate 300, and an image processing program for processing the captured image to detect a defective portion. First, the imaging procedure will be described using FIG. Initially, in order to allow the inspection start position of the inspection area of the polycrystalline silicon film 30 1 to enter the field of view of the first camera 8 2 3 and the second camera 826 of the imaging optical system 820, the driving means control unit 847 drives the driving means 8 3 2 The position of the substrate platform 831 is controlled, and the substrate 300 is set at the initial position (inspection start position) (S901). Next, the power source control unit 846 controls the first light source 81 1 and the second light 21 - 201248692 source 814, and will borrow The first ray of the linear shape formed by the first cylindrical lens 813 has an incident angle of 01, and the ray of the second wavelength which is linear by the second cylindrical lens 81 has an incident angle of 0 2 , respectively, on the 00. In the same field of the polycrystalline germanium film 301, irradiation is performed. (In order to move the field of the polycrystalline germanium film 301 that illuminates the light of the wavelength of the first wavelength along the illuminated optical system 8 10 to move the camera field of the camera system 80 2 0 The drive means control unit 874 controls the drive 832 to start moving the substrate stage 831 at a constant speed (S903) while moving the substrate stage 831 at a constant speed to form the first cylindrical lens 813 of the optical system 810 as a line. shape The polycrystalline germanium film illuminated by the light of the first wavelength incident at 0 degrees is elongated in the direction of the crystal grain boundary of the inspection field, and the microscopic projections 032 of the crystal grain boundary are oriented toward the optical image caused by the primary diffracted light generated by the light. The wavelength is selected to be 821, and the first camera 321 is used for photographing. At the same time, the second cylindrical lens 8 16 of the optical system 810 is formed into a linear shape and is illuminated by a second wavelength of light incident at 0 degrees. The polycrystalline film 30 1 is elongated in the direction of the inspection, and the microscopic projections of the crystal grain boundaries in the inspection field are oriented toward the optical image caused by the primary diffracted light, and the second camera 82 is photographed via the wavelength selection 824 ( S904) The detection signal sent from the first camera 823 by the light of the first diffracted light of the first wavelength is input to the A/D conversion unit 841 of the inspection control unit 840 and is A/ D is converted to the calculation processing unit 843. The detection signal 1 wavelength 6 sent from the second camera 826 which is an optical image of the light of the second wavelength is formed on the substrate S902) and the second image is optically moved. Means 〇 illuminated by the corner of a β 3 cube filter is illuminated 2 corner 04 in the one side of the filter selection information learned image and the input order diffracted number, based

S -22 - 201248692 The A/D conversion unit 842 input to the inspection data processing and control unit 840 is A/D-converted and then input to the calculation processing unit 843. The detection signal that has been input to the calculation processing unit 843 is processed using the position information of the substrate platform 831 obtained by the drive means control unit 847, and the first digit resulting from the signal captured by the first camera 823 is created. The second digital image (S 990) caused by the image and the signal obtained by the second camera 826. The above operation is repeatedly performed until the inspection of one line along the X direction or the γ direction is completed (S 906 ). Next, it is confirmed whether there is an inspection area adjacent to the checked one-line field (S907), and if there is an adjacent un-inspected area, the substrate platform 831 is moved to the adjacent inspection area (S908), and S903 is repeated. A step of. When all the fields to be inspected have been inspected, the movement of the XY table is stopped (S909), and the first light source 81 1 and the second light source 8 1 4 are controlled by the power source control unit 846 to turn off the illumination (S 9 1 0 ), and the process ends. Camera program. Next, a video processing program for processing the first digital video and the second digital video obtained by the imaging program of S905 will be described with reference to Fig. 10 . In the digital image creation step (S905) of the imaging program, the first digital video and the second digital video created by the arithmetic processing unit 843 are input to the processing determination unit 844 (S1001), and the first digital video and the second digital digit are displayed. The image is synthesized (S 1 002 ), and the image signal corresponding to the first digital image and the second digital image is processed using the calculation formula shown in (2), and the corresponding position of the crystallization film 3 0 1 is The irradiation energy of the irradiated excimer laser is calculated across the predetermined area of the substrate 300 to -23-201248692 (S1003), and the calculated excimer laser irradiation energy falls within a predetermined reference irradiation energy range. Or, judged to be larger than the specified area of the substrate 300 (S 1 004 ). Next, based on the result of the determination across the predetermined area of the substrate 300, a map of the excimer laser irradiation energy intensity in the predetermined field of the substrate 300 is formed and displayed on the display screen 8451 of the input/output unit 845 (S1005), and the processing is terminated. • Decision procedure. The excimer laser irradiation energy intensity map displayed on the display screen 8451 is larger or smaller than the predetermined reference irradiation energy range set in S1 004, and is determined to be defective in the field, which is different from the normal field. Displayed differently. Further, when the determination criterion input from the input/output unit 845 is changed, the defective area is displayed in accordance with the changed defect determination criterion. An example of the inspection result display screen 1 100 displayed on the display unit 845 1 is shown in Fig. 1.1. The inspection result display screen 1100 is a substrate designating portion 1101 for designating a display target substrate, and an execution button 1102 for instructing execution of a designated substrate display to display an excimer for displaying the designated substrate as shown in FIG. The entire substrate distribution display field 1103 of the laser irradiation energy intensity distribution is used to specify an enlarged display designation means for the enlarged display field among the excimer laser irradiation energy intensity distributions of the entire substrate shown in the substrate image display field 101. 〇4, an enlarged display field 1105 of the excimer laser irradiation energy intensity distribution in the field designated by the enlargement display designation means 1104, and an inspection result display portion 1106 for displaying the substrate inspection result are displayed in one On the screen. -twenty four-

In the image of the molecular laser irradiation energy intensity distribution displayed on the entire display image field 1103 of the S 201248692 substrate, the determination result of the image 8 44 is highlighted. In other words, the imaged portion 844 determines that the range of the irradiation energy intensity is larger than the reference irradiation energy range or that the field is determined to be normal, and the irradiation energy intensity distribution displayed on the field 1103 is displayed in the entire substrate. FIG. 12A and FIG. 12A show an example in which the entire substrate is divided into a matrix, and the irradiation energy of the excimer laser calculated in S 003 is displayed in 256 gradations. Further, Fig. 12B shows an example in which the field determined to be defective based on the judgment of S 1 004 is larger than the reference irradiation energy range, and is identifiable. The inspection is carried out by the above-described composition, and it is possible to maintain a commercial quality liquid crystal display panel by examining the crystal state of the thin film by excimer laser annealing with higher precision. Further, although it has been described that the illumination optical system 200 mirror 205 is replaced with a normal circular lens in the one-direction elongated region on the illumination substrate 1, the same effect can be obtained. [Embodiment 2] The quasi-processing and determination of the entire substrate Partial image processing • The excimer laser 12B is displayed in the same color as the small one. In each of the fields, the result of the energy is determined, and the domain 1 and the embodiment 1 which is displayed less than this are used, and the glass substrate for the polycrystalline germanium panel is formed by using a cylindrical surface, but it is -25-201248692 In Embodiment 1, although two light sources that emit mutually different wavelengths of light are used in the illumination optical system 8 1 ,, in the present embodiment, it is explained that as a light source, a single light source that emits multiple wavelengths of light is used. example. The overall configuration of the polycrystalline silicon thin film inspection apparatus for a glass substrate for a liquid crystal display panel in the second embodiment is the same as that described in Fig. 7 in the first embodiment, and thus detailed description thereof will be omitted. Further, the configuration of the imaging optical system and the substrate platform unit, the inspection data processing and control unit in the second embodiment, the operation and function thereof, and the imaging optical system 820 and the substrate platform unit 83 described in the first embodiment, and inspection data Since the processing and control unit 840 are the same, the description is omitted. FIG. 13 shows the configuration of the illumination optical system 1310 of the present embodiment. The illumination optical system 1 3 1 0 in the present embodiment includes a light source 1311 that emits a plurality of wavelengths of light including wavelengths λ 1 and λ 2 , and a light beam that reflects the light of the wavelength λ 而 and passes the light of other wavelengths. The dichroic mirror 1312, the second dichroic mirror 1 3 1 3 that reflects the light of the wavelength λ2 and transmits the light of the wavelength other than the first dichroic mirror 1312, and the first dichroic mirror 1 is changed. The mirror 812 of the optical path of the light of the wavelength Λ1 reflected by the lens 312, the light of the wavelength λ 1 of the optical path that has been changed by the mirror 812 is concentrated in one direction to form a linear light, and the pair is held on the substrate platform. The first cylindrical lens 813 for irradiating the substrate 300 on the portion 861 from the direction of 0 1 with respect to the normal direction, and the light having the wavelength λ 2 reflected by the second dichroic mirror 1 3 1 3 The light path mirror 815 converges the light having the wavelength λ 2 of the optical path that has been changed by the mirror 8 15 in one direction to form linear light, and the substrate held on the substrate platform portion 833

-26-S 201248692 300 The second cylindrical lens 8 16 for irradiation from the direction 02 in the normal direction. In the above configuration, the light emitted from the light source 1 31 is incident on the first dichroic mirror 1312, and the light of the wavelength Λ1 is reflected, and the light of the other wavelength passes through the first dichroic mirror 1312. The light having the wavelength λ 1 reflected by the first dichroic mirror 1312 is incident on the mirror 8 1 2 and totally reflected to change the optical path, and then incident on the first cylindrical lens 8 1 3 . The light ray of the wavelength λ 1 incident on the first cylindrical lens 8 1 3 is formed into a linear shape that is converged in one direction and is not converged in the other direction (the direction perpendicular to the plane of the paper of FIG. 13), and In the case of the first embodiment, the substrate 300 held on the substrate stage 831 is incident from the angle direction with respect to the normal direction 0 1 . On the other hand, the light which is emitted from the light source 1311 and penetrates the first dichroic mirror 1312 is incident on the second dichroic mirror 1313, and the light of the wavelength Λ2 is reflected, and the light of the other wavelength passes through the second dichroic mirror 1313. The light having the wavelength λ 2 reflected by the second dichroic mirror 1 3 1 3 is incident on the mirror 815 and totally reflected to change the optical path, and then incident on the second cylindrical lens 816. The light ray of the wavelength Λ2 incident on the second cylindrical lens 816 is formed into a linear shape that is converged in one direction and does not converge in the other direction (the direction perpendicular to the plane of the paper of FIG. 13), and the first embodiment In the same manner, the region of the substrate 300 held by the substrate stage 831 that is irradiated with the light having the linear wavelength Λ 1 by the first cylindrical lens 813 is incident from the angular direction with respect to the normal direction 02. In the present embodiment, the image of the diffracted light generated by the substrate 30,000 irradiated by the light of the wavelength λ 与 and the light of the wavelength λ2 -27-201248692 is photographed by the imaging optical system to check the data processing. The imaging program and the image processing program for processing the signals are the same as those described in the first embodiment with reference to FIGS. 9 and 1 and therefore the description thereof is omitted. According to this embodiment, since the light source of the illumination optical system can be designed to be one, the illumination optical system can be designed to be more compact. [Embodiment 3] In Embodiment 2, it is explained that a single light source that emits a plurality of wavelengths of light including wavelengths λ 1 and λ 2 is used in the illumination optical system 1 3 10 , and is separated into two using a two-color mirror. The light of the wavelength Λ1 and the light of the wavelength λ2 are respectively incident on the substrate 300 from the angle direction of the 01 and the angle of 02, but in the present embodiment, the complex wavelengths λ 1 and λ 2 are included for the emission. An example in which light emitted from a single light source of wavelength light is directly irradiated onto the substrate 300 will be described using FIG. The overall configuration of the polycrystalline silicon thin film inspection apparatus for a glass substrate for a liquid crystal display panel in the third embodiment is the same as that described in Fig. 7 in the first embodiment, and thus detailed description thereof will be omitted. In the configuration shown in Fig. 14, the same components as those in Fig. 8 described in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted. The difference from the configuration of the first embodiment is the illumination optical system 1 4 10 and the imaging optical system 1420. Wherein, the illumination optical system 1410 is provided with: a light source 1 4 1 1 that emits light having a certain wavelength band, and a light emitted from the light source 1 4 1 1

S -28- 201248692 Mirror 812 whose optical path is changed, condenses the light which has been changed by the mirror 812 to form a linear light, and is held on the glass substrate 300 of the substrate platform 8 3 1 from the relative A cylindrical lens 8 1 3 that is irradiated in a direction of 0 1 法 in the normal direction. Further, the imaging optical system 1 420 includes a first camera 823' having a crystal light having a certain wavelength band formed by the cylindrical lens 8 1 3 and crystallization of the polycrystalline silicon film 301 irradiated onto the glass substrate 300. Among the primary diffracted lights generated by the minute protrusions generated at the grain boundary, the primary diffracted light having the wavelength λ 1 traveling in the direction of the angle 03 in the normal direction penetrates the past first wavelength selection filter 1421. And a first imaging lens system 8 22 that images the primary diffraction light having a wavelength λ 穿透 that has passed through the first wavelength selection filter 1421 ; and a second camera 826 that includes a primary diffracted light generated by the micro projections Wherein, the primary diffracted light of the wavelength λ2 traveling in the direction of the normal direction in the direction of the angle 04 penetrates the past second wavelength selection filter 1 424 and the wavelength λ2 that will penetrate the second wavelength selection filter 1 424 The second imaging lens system 825 that takes light once by diffracting light. In the present embodiment, the detection signals from the first camera 8 23 and the second camera 8 26 are used to check the image processing program and the image processing program for processing the data processing and control unit signals, and FIG. 9 is used in the first embodiment. The description of Fig. 10 is the same, and therefore the description is omitted. According to this embodiment, the illumination optical system can be designed to be more compact than that of the second embodiment. [Simple description of the drawing] -29- 201248692 [Fig. 1] A graph showing the relationship between the irradiation energy of the excimer laser and the crystal grain size of the polycrystalline germanium film. [Fig. 2A] A plan view of a polycrystalline sand film schematically showing the state of the polycrystalline germanium film formed when the irradiation energy of the excimer laser is small. [Fig. 2B] A plan view of a polycrystalline sand film schematically showing the state of the polycrystalline sand film formed when the irradiation energy of the excimer laser is appropriate. [Fig. 2C] A plan view of a polycrystalline germanium film schematically showing the state of the polycrystalline germanium film formed when the irradiation energy of the excimer laser is too large. Fig. 3 is a block diagram showing a schematic configuration of an optical system for irradiating a substrate on which a polycrystalline germanium film is formed with illumination light to detect primary diffracted light. Fig. 4 is a graph showing the relationship between the irradiation energy of the excimer laser and the brightness of the primary diffracted light generated from the polycrystalline germanium film when the illumination light is irradiated. [Fig. 5] A graph showing the relationship between the irradiation energy of the excimer laser and the brightness of the primary diffracted light measured at different detection angles when the illumination light is irradiated. Fig. 6 is a graph showing the relationship between EV (X) and excimer laser irradiation energy obtained from the two characteristic curves shown in Fig. 5. [Fig. 7] A block diagram for explaining the outline of the entire inspection apparatus. [Fig. 8] A block diagram for explaining the schematic configuration of the inspection unit in the first embodiment. Fig. 9 is a flow chart showing an imaging procedure for photographing a substrate in order to examine the crystal state of the polycrystalline germanium film in the first embodiment. [Fig. 1] A flow chart of an image processing program for detecting a defective portion in order to examine the crystal state of the polycrystalline germanium film in Example 1. • 30-

S 201248692 [Fig. 11] Front view of the output screen of the inspection result of the inspection unit in the first embodiment. [Fig. 12A] The distribution of the irradiation energy intensity distribution of the excimer laser of the entire substrate displayed on the entire display of the substrate 1103 in the output screen of the inspection result in the inspection unit in the first embodiment, and the display in a matrix form. FIG. 12B is an illustration of a display example of a field exceeding the threshold 当中 among the irradiation energy intensity of the excimer laser of the entire substrate displayed on the output screen of the inspection unit in the first embodiment. . [Fig. 13] A block diagram of a schematic configuration of the illumination optical system in the second embodiment. [Fig. 14] A block diagram for explaining the schematic configuration of the inspection unit in the third embodiment. [Description of main component symbols] 3A: Substrate 700: Inspection device 720: Inspection unit 721: Inspection unit 740, 840: Inspection data processing and control unit 750: Overall control unit 8 1 0, 1 3 1 0, 1 4 1 0: illumination optical system 81 1 : first light source - 31 - 201248692 814 : second light source 8 1 3 : first cylindrical lens 8 1 6 : second cylindrical lens 820, 1420: imaging optical system 821 : first wavelength Selection filter 824: second wavelength selection filter 822: first imaging lens 8 2 5 : second imaging lens 823: first camera 826: second camera 8 3 0 : substrate platform portion 8 3 1 : substrate platform 840: Video processing unit 841, 842: A/D conversion unit 843: video generation unit 844: processing/determination unit 845: input/output unit 8451: display screen 8 4 8 : control unit 1 3 1 1, 1 4 1 1 : light source 1 3 1 2 : 1st dichroic mirror 1 3 1 3 : 2nd dichroic mirror -32-

S

Claims (1)

201248692 VII. Patent application scope: 1. A polycrystalline silicon thin film inspection device is a polycrystalline silicon thin film inspection device including a substrate mounting portion, a substrate inspection portion, a substrate unloading portion, and an overall control portion, wherein the front substrate inspection portion is provided The first illumination means is for irradiating a substrate having a polycrystalline germanium film on its surface with a light having a first wavelength from a first direction; and a second illumination means for irradiating the first illumination means of the pre-recorded substrate with a first illumination means In the field of the first wavelength light, the second wavelength is irradiated from the second direction; and the first imaging means is used for imaging, and the first wavelength is irradiated from the first illumination means and the second illumination means. The light source and the optical image of the first primary diffracted light caused by the light of the first wavelength generated in the third direction of the front substrate of the light having the second wavelength, and the second imaging means are used for imaging, and are recorded from the front The first illumination means and the pre-recording second illumination means are irradiated with the light of the "first wavelength" and the front of the light of the second wavelength of the front surface which are generated in the fourth direction. An optical image of the second-order diffracted light caused by the light of the second wavelength; and a signal processing/determination means for taking a signal obtained by photographing the optical image of the first-time diffracted light by the first imaging means. The signal obtained by taking the optical image of the second-order diffracted light by the second imaging means described above is processed to determine the crystal state of the polysilicon film formed on the pre-recorded substrate. 2. The polycrystalline silicon thin film inspection apparatus according to claim 1, wherein the first illumination means includes: a first light source unit for emitting light of a first wavelength; and a first cylindrical lens, wherein: -33 - 201248692 The light source of the first wavelength emitted from the first light source unit is collected in one direction to form linear light to be irradiated onto the front substrate; and the second illumination means includes the second light source unit. The second cylindrical lens emits light of a second wavelength emitted from the second light source unit in a single direction to form linear light to be irradiated onto the front substrate. 3. The polysilicon film inspection apparatus according to claim 1, wherein the first illumination means and the second illumination means share a plurality of wavelengths of the light having the first wavelength and the second wavelength. a light source unit of the light; the first illumination means includes: a first dichroic mirror that reflects the light of the first wavelength from the light of the plurality of wavelengths emitted from the front light source unit to allow light of other wavelengths to penetrate; And the first cylindrical lens is configured to condense the light of the first wavelength before being reflected by the first dichroic mirror in a direction to form a linear light to be irradiated onto the pre-recorded substrate; The second dichroic mirror is configured to reflect light of a second wavelength of light passing through the first dichroic mirror before the light source of the multi-wavelength emitted from the light source portion, and to transmit light of other wavelengths; And the second cylindrical lens is configured to condense light having a second wavelength reflected by the second dichroic mirror in one direction to form linear light to be irradiated onto the pre-recorded substrate. 4. The polysilicon film inspection apparatus according to claim 1, wherein the first direction is formed at a larger angle than the second direction in the front direction with respect to the normal direction of the surface of the front substrate, and the pre-record is arranged. S-34-201248692 1 illuminating means and pre-recording second illuminating means; arranging the pre-recording so that the third direction is formed at a smaller angle than the fourth direction in the front direction with respect to the normal direction of the surface of the front substrate The first imaging means and the second recording means. The polysilicon film inspection apparatus according to any one of claims 1 to 4, wherein the light of the first wavelength is shorter than the wavelength of the light of the second wavelength. 6. A polycrystalline silicon thin film inspection device, which is a polycrystalline silicon thin film inspection device including a substrate mounting portion, a substrate inspection portion, a substrate unloading portion, and an overall control portion, wherein the front substrate inspection portion includes: illumination means for The substrate on which the polycrystalline germanium film is formed on the surface is irradiated with light; and the first imaging means is used for imaging, and the optical image of the first primary diffracted light generated by the substrate in the first direction is recorded before the light is irradiated by the pre-recording illumination means: The second imaging means is used for imaging, and the optical image of the second-order diffracted light generated by the substrate in the second direction before the light is irradiated by the pre-recording illumination means; and the signal processing/determination means are used for The first camera records the signal obtained by the first optical image of the diffracted light and the signal obtained by the second imaging device to record the optical image of the second diffracted light. The crystalline state of the polycrystalline germanium film on the substrate. The polycrystalline silicon thin film inspection apparatus according to claim 6, wherein the first imaging means includes a first wavelength selective filter that blocks light of the first wavelength and shields light of other wavelengths. And photographing the optical image of the first primary diffracted light before the light having passed through the first wavelength of the first wavelength selective filter; and the second imaging means having the light of the second wavelength penetrated A second wavelength selection filter that shields light of other wavelengths and captures an optical image of the second-order diffracted light caused by light having passed through the second wavelength of the second wavelength selection filter. The polycrystalline silicon thin film inspection apparatus according to claim 7, wherein the light of the first wavelength is shorter than the wavelength of the light of the second wavelength, and the first direction is compared with the normal direction of the front substrate. The angle of inclination in the second direction is also small. A method for inspecting a polycrystalline germanium film, characterized in that a substrate having a polycrystalline germanium film formed on a surface thereof is irradiated with light of a first wavelength from a first direction; and a field of light of a first wavelength of a pre-recorded substrate is irradiated Light rays of the second wavelength are irradiated in the two directions; the first one is caused by the light of the first wavelength which is generated from the light of the first wavelength and the light of the second wavelength before the substrate is directed to the third direction. The optical image of the light is photographed; the second-order winding caused by the light of the second wavelength generated by the light from the first wavelength and the light of the second wavelength before the substrate is directed to the fourth direction The optical image of the light is taken, and the signal obtained by the optical image of the first-time diffracted light is taken. -36- 201248692 The signal obtained by photographing the optical image of the second-order diffracted light is processed to determine the crystal state of the polysilicon film formed on the pre-recorded substrate. 1 . The polycrystalline germanium film inspection method according to claim 9, wherein the light having the first wavelength is irradiated from the first direction, and the first wavelength emitted from the first light source unit is emitted by the first cylindrical lens. The light is collected in one direction to form linear light, and is irradiated from the front substrate in the first direction. The second wavelength is irradiated from the second direction by the second cylindrical lens. The light of the second wavelength emitted by the light source unit is collected in one direction to form linear light, and is irradiated with the front substrate from the second direction. The polycrystalline germanium film inspection method according to claim 9, wherein the light of the first wavelength is irradiated from the first direction by multiwavelength from the light having the first wavelength and the second wavelength of the light. Among the light beams emitted from the light source unit, the light of the first wavelength reflected by the first dichroic mirror that reflects the light of the first wavelength is concentrated in the first cylindrical lens to form a line. The light of the second light is irradiated in the first direction from the first direction, and the light of the second wavelength is irradiated from the second direction by the multi-wavelength of the light having the first wavelength and the second wavelength of the light. Among the light emitted from the light source portion of the light, the second wavelength of the light reflected by the second dichroic mirror that reflects the light of the second wavelength is collected in a direction by the second cylindrical lens to form a line. The light is irradiated by irradiating the front substrate in the second direction from the front. The method for inspecting a polysilicon film according to claim 9, wherein the first direction of the light of the first wavelength before the irradiation is the second direction of the surface of the substrate before the -37-201248692 The direction of the angle is still large; the third direction of the optical image of the first diffracted light caused by the light of the first wavelength is the smaller than the fourth direction of the front surface of the front substrate. The direction of the angle. The polycrystalline germanium film inspection method according to any one of claims 9 to 2, wherein the light of the first wavelength is shorter than the wavelength of the light of the second wavelength. 14. A method for inspecting a polycrystalline germanium film, characterized in that a substrate having a polycrystalline germanium film formed on a surface thereof is irradiated with light; and an optical of the first-order diffracted light generated from the substrate toward the first direction before being irradiated by the light Photographing the image of the second-order diffracted light generated by the substrate toward the second direction before being irradiated by the pre-recorded light; and obtaining the optical image of the first-time diffracted optical image before the photographing The signal obtained by the optical image of the second-order diffracted light is processed to detect the crystal state of the polysilicon film formed on the pre-recorded substrate. The method for inspecting a polysilicon film according to claim 1, wherein the optical image of the first-order diffracted light generated in the first direction from the substrate before being irradiated by the pre-recorded light is interposed. An optical image of the second-order diffracted light generated by the substrate in the second direction before the light irradiated by the pre-recorded light is imaged by the first wavelength selection filter that blocks the light of the wavelength and blocks the light of the other wavelengths. The second wavelength selection filter that shields the light of the other wavelength from light of the second wavelength is imaged. -38- 201248692 1 6 . As described in claim 15, the light of the first wavelength is shorter than the previous one, and the angle of inclination in the second direction with respect to the normal direction of the front substrate is small. The wafer film inspection method, wherein the wavelength of the light of the second wavelength is still, the first direction of the first direction is compared with the previous note -39-