CN102788805A - Polycrystalline silicon film examination method and device thereof - Google Patents
Polycrystalline silicon film examination method and device thereof Download PDFInfo
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- CN102788805A CN102788805A CN2012101566648A CN201210156664A CN102788805A CN 102788805 A CN102788805 A CN 102788805A CN 2012101566648 A CN2012101566648 A CN 2012101566648A CN 201210156664 A CN201210156664 A CN 201210156664A CN 102788805 A CN102788805 A CN 102788805A
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- H01—ELECTRIC ELEMENTS
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Abstract
The invention provides a polycrystalline silicon film examination method and a device thereof. The polycrystalline silicon film examination method can optically observe the status of a polycrystalline silicon film surface and examine the crystalline state of the polycrystalline silicon film. A substrate examination part of a polycrystalline silicon film examination device comprises an illumination unit irradiating light on a substrate whose surface is formed with the polycrystalline silicon film, a first photographing unit which shoots an optical image of a first primary diffraction light generated by the substrate along a first direction, a second photographing unit which shoots an optical image of a second primary diffraction light generated by the substrate along a second direction, and a signal processing/determining unit which determines the crystalline state of the polycrystalline silicon film formed on the substrate through processing a signal generated from shooting the optical image of the first primary diffraction light by the first photographing unit and a signal generated from shooting the optical image of the second primary diffraction light by the second photographing unit.
Description
Technical field
The present invention relates to method and device thereof that the crystalline state that makes the polysilicon membrane behind the amorphous silicon polycrystallization that forms on the substrate through laser annealing is checked.
Background technology
In order to ensure action at a high speed, through PRK the part of the amorphous silicon that on substrate, forms is carried out process annealing, in the zone of polycrystallization, be formed on the thin film transistor (TFT) (TFT) that uses in liquid crystal display cells or the organic EL etc. thus.
Like this,, make under the situation of its polycrystallization, require polycrystallization equably the part of amorphous silicon being carried out process annealing through PRK, but in fact, sometimes because the influence of the change of LASER Light Source produces fluctuation in crystallization.
Therefore; Method as the generation state of the fluctuation of keeping watch on this silicon crystallization; In patent documentation 1, put down in writing following method: to the semiconductor film irradiated with pulse laser, carry out laser annealing, and to laser radiation zone examination light; Inspection light through irradiation detects the reflected light from substrate, confirms the state of the crystallization of semiconductor film according to the Strength Changes of this radiating light.
In addition; In patent documentation 2, put down in writing following technology: to the amorphous silicon examination light before the irradiating laser; Detect its reflected light or see through light, examination light in to the process of amorphous silicon irradiating laser detects its reflected light or sees through light; Detection before irradiating laser with the irradiating laser process reflected light or the difference that sees through light intensity reflected light before turning back to irradiating laser or see through elapsed time of light intensity when maximum, come the state of monitoring laser annealing.
And; In patent documentation 3, put down in writing following technology: the amorphous silicon that on substrate, forms is changed in the zone of polysilicon for the direction irradiation visible light of substrate surface from 10 ~ 85 degree; With the scope of the identical angle of irradiation in camera detection of reflected light through ground connection, according to the state of the configuration of the projection of this catoptrical variation inspection crystal surface.
And; In patent documentation 4, put down in writing following technology: for polysilicon membrane examination light through amorphous silicon film irradiation PRK is formed; Through the diffraction light of diffraction light detector monitors from polysilicon membrane; The strength ratio of the diffraction light that the zone that utilization is constructed from the trickle convex-concave of the high rule of the crystallinity of polysilicon membrane produces is checked the state of polysilicon membrane from the high phenomenon of diffraction/scattered intensity in the low zone of crystallinity.
Be known in the film irradiation PRK of amorphous silicon is annealed, on the surface of the polysilicon membrane (polysilicon film) that forms thus, produce trickle convex-concave periodically.And; Known this trickle projection has reflected the degree of the crystallization of polysilicon membrane; Form trickle convex-concave regularly periodically on the surface of (polycrystalline grain diameter is neat) polysilicon membrane of crystalline state homogeneous, on the surface of low (polycrystalline grain diameter the is uneven) polysilicon membrane of crystalline state homogeneity, be irregularly formed trickle concavo-convex.
Like this; Method as the surface state of checking the polysilicon membrane that in reflected light, has reflected crystalline state; In patent documentation 1, only put down in writing the state that changes the crystallization of confirming semiconductor film according to the reflection of light light intensity that shines the zone of having carried out laser annealing, record does not detect the diffraction light of reflection crystalline state.
In addition; In patent documentation 2, put down in writing and compared reflected light with the preceding reflected light of annealing from the zone of the laser radiation in the laser annealing; Keep watch on the technology of carrying out state of annealing, still detect the technology of the diffraction light that has reflected crystalline state with patent documentation 1 the same record.
On the other hand; In patent documentation 3, put down in writing the variation of the light that reflects according to the configuration of the surperficial projection of the polysilicon membrane that forms through laser annealing; Check the technology of quality of the crystallization of polysilicon; But record does not detect the technology of the diffraction light that produces owing to the surperficial projection of polysilicon membrane.
And; In patent documentation 4, put down in writing and to have detected because the technology of the diffraction light that the surperficial projection of the polysilicon membrane that laser annealing forms causes; But for keeping watch on the state of checking polysilicon membrane through the strength level of the detected diffraction light of diffraction light detecting device; Record detects the image on the surface of polysilicon membrane, observes the technology of state of certain regional projection on the surface of polysilicon membrane.
[patent documentation 1] TOHKEMY 2002-305146 communique
[patent documentation 2] japanese kokai publication hei 10-144621 communique
[patent documentation 3] TOHKEMY 2006-19408 communique
[patent documentation 4] TOHKEMY 2001-308009 communique
Summary of the invention
The objective of the invention is to solve the problem of above-mentioned prior art, the state that provides the image that can detect the polysilicon membrane surface to observe the polysilicon membrane surface, the inspection method and the device thereof of the polysilicon membrane of the crystalline state of inspection polysilicon membrane.
In order to solve above-mentioned problem; In the present invention; In the polysilicon membrane testing fixture that possesses substrate loading part, inspecting substrate portion, substrate unloading part and all control parts; Inspecting substrate portion possesses: first lighting unit, and it shines the light of first wavelength to the substrate that has formed polysilicon membrane from the teeth outwards from first direction; Second lighting unit, its from second direction to substrate pass through first lighting unit illuminated the light of area illumination second wavelength of light of first wavelength; First image unit; It takes the optical imagery based on the first diffraction lights of the light of first wavelength that produces at third direction from substrate, substrate through said first lighting unit and second lighting unit illuminated light and the light of said second wavelength of first wavelength; Second image unit, it takes the optical imagery based on the second diffraction lights of the light of second wavelength that upwards produces in the four directions from substrate, substrate through first lighting unit and second lighting unit illuminated light and the light of second wavelength of first wavelength; And signal Processing/identifying unit; The signal that it gets the optical imagery of taking the first diffraction lights through first image unit and take the signal that the optical imagery of the second diffraction lights gets through second image unit and handle is judged the state of the crystallization of the polysilicon film that on substrate, forms.
In addition; In order to solve above-mentioned problem, in the present invention, in the polysilicon membrane testing fixture that possesses substrate loading part, inspecting substrate portion, substrate unloading part and all control parts; Inspecting substrate portion possesses: lighting unit, and it is to formed the substrate irradiates light of polysilicon membrane from the teeth outwards; First image unit, its take from through lighting unit illuminated the optical imagery of the first diffraction lights producing at first direction of the substrate of light; Second image unit, its take from through lighting unit illuminated the optical imagery of the second diffraction lights producing in second direction of the substrate of light; And signal Processing/identifying unit; The signal that it gets the optical imagery of taking the first diffraction lights through first image unit and take the signal that the optical imagery of the second diffraction lights gets through second image unit and handle is judged the crystalline state of the polysilicon film that on substrate, forms.
And; In order to solve above-mentioned problem; In the present invention; The method of inspection polysilicon membrane is handled as follows: the light that the substrate that has formed polysilicon membrane is from the teeth outwards shone first wavelength from first direction; From the light of second direction to area illumination second wavelength of the light of illuminated first wavelength of substrate; The optical imagery that shooting produces at third direction from the substrate of the light of the light of illuminated first wavelength and second wavelength based on the first diffraction lights of the light of first wavelength; The optical imagery that shooting upwards produces in the four directions from the substrate of the light of the light of illuminated first wavelength and second wavelength based on the second diffraction lights of the light of second wavelength, to the optical imagery of taking the first diffraction lights and signal with the optical imagery of taking the second diffraction lights and signal handle, judge the crystalline state of the polysilicon film that on substrate, forms.
And; In order to solve above-mentioned problem; In the present invention; The method of inspection polysilicon membrane is handled as follows: to having formed the substrate irradiates light of polysilicon membrane from the teeth outwards, take the optical imagery of the first diffraction lights that produce at first direction from the substrate of illuminated this light, take the optical imagery of the second diffraction lights that produce in second direction from the substrate of illuminated light; To the optical imagery of taking the first diffraction lights and signal with the optical imagery of taking the second diffraction lights and signal handle, judge the crystalline state of the polysilicon film that on substrate, forms.
In addition, in order to solve the problem of above-mentioned prior art, in the present invention, the polysilicon membrane testing fixture possesses: from a surperficial side of the substrate light irradiation unit to substrate irradiates light transparent on the optics that has formed polysilicon membrane from the teeth outwards; Take the image unit of the image of a diffraction light; The image of this diffraction light is a light irradiation unit from the light transmission substrate and the polysilicon membrane of a surperficial side irradiation of substrate, injects to the image of the diffraction light that the light of another surperficial side of substrate produces in another surperficial side; Image to take a diffraction light that gets through image unit is handled, the graphics processing unit of the crystalline state of inspection polysilicon membrane; And the image of a diffraction light after will handling through graphics processing unit is presented at the output unit on the picture with the result's of inspection information; From a surperficial side of substrate to substrate irradiates light transparent on the optics that has formed polysilicon membrane from the teeth outwards; Substrate injects to another surperficial side of substrate with polysilicon membrane the light that sees through to from the light of the surperficial side irradiation of substrate is taken at the image of a diffraction light of another surperficial side generation; To shooting and the image of a diffraction light handle; The crystalline state of inspection polysilicon membrane is presented at the image of a diffraction light after the handling information with the result of inspection on the picture.
According to the present invention, whether the energy of the PRK of irradiation is suitable in the time of can easily judging annealing according to the crystalline state of the polysilicon membrane that forms through quasi-molecule laser annealing.In addition, according to the result who judges control irradiation can, can keep display panels high-quality with glass substrate thus.
Description of drawings
Fig. 1 be the expression PRK irradiation can and the curve map of the relation of the crystal grain diameter of polysilicon membrane.
Fig. 2 A is the planimetric map of polysilicon membrane of the state of the polysilicon membrane of representing that schematically the irradiation of PRK can hour form.
Fig. 2 B is the planimetric map of polysilicon membrane of the state of the polysilicon membrane that forms suitably the time of the irradiation of schematically representing PRK.
Fig. 2 C is the planimetric map of polysilicon membrane of the state of the polysilicon membrane of representing that schematically the irradiation of PRK forms in the time of can be excessive.
Fig. 3 is that expression is to having formed the substrate irradiating illumination light of polysilicon membrane, the block diagram of the structure of the summary of the optical system of a diffraction light of inspection.
Fig. 4 is the curve map of relation of the brightness of a diffraction light can be when having shone illumination light producing from polysilicon membrane of the irradiation of expression PRK.
Fig. 5 be the irradiation of expression PRK can be when having shone illumination light with the curve map of the relation of the brightness of the detected diffraction light in different detection angle.
Fig. 6 be the EV (x) that obtains according to two family curves shown in Figure 5 of expression with excimer laser irradiation can the curve map of relation.
Fig. 7 is the block diagram of the structure of the summary that is used to explain that testing fixture is all.
Fig. 8 is the block diagram of structure of summary that is used for the inspection unit of illustrative embodiment 1.
Fig. 9 is the shooting order of substrate is taken in expression for the crystalline state of checking the polysilicon membrane among the embodiment 1 a process flow diagram.
Figure 10 be expression in order to check the crystalline state of the polysilicon membrane among the embodiment 1, to shooting and image handle the process flow diagram of the order of the Flame Image Process that detects defect part.
Figure 11 is the front view (FV) of picture of the check result of the inspection unit of output among the embodiment 1.
The substrate of picture of check result that Figure 12 A is rectangular to be presented at the inspection unit of output embodiment 1 distributes the irradiation of all PRKs of the substrate that shows in all viewing areas 1103 can intensity distributions.
The substrate of picture of check result that Figure 12 B is illustrated in the inspection unit of output embodiment 1 irradiation of all PRKs of the substrate that shows in the viewing area 1103 example in can intensity, that surpassed the zone of threshold value that all distributes.
Figure 13 is the block diagram of structure of the summary of the lamp optical system of expression among the embodiment 2.
Figure 14 is the block diagram of structure of summary that is used for the inspection unit of illustrative embodiment 3.
Symbol description
300 substrates; 700 testing fixtures; 720 inspection portions; 721 inspection units; 740,840 inspection data processing/control parts; 750 all control parts; 810,1310,1410 lamp optical systems; 811 first light sources; 814 secondary light sources; 813 first cylindrical lenses; 816 second cylindrical lenses; 820,1420 image pickup optical systems; 821 first wavelength selective filters; 824 second wavelength selective filters; 822 first imaging lens; 825 second imaging lens; 823 first cameras; 826 second cameras; 830 substrate stage portions; 831 substrate stages; 840 image processing parts; 841,842 A/D transformation components; 843 image production parts; 844 processing/detection units; 845 input and output portions; 8451 display frames; 848 control parts; 1311,1411 light sources; 1,312 first dichronic mirrors; 1,313 second dichronic mirrors
Embodiment
As embodiment of the present invention, examples of applications in the device of the polysilicon membrane that the inspection display panels forms on glass substrate is described.
The display panels of inspection object with glass substrate (below be designated as substrate) in, the film of formation amorphous silicon on substrate.Regional area irradiation PRK at the film of this amorphous silicon scans; Thus; The amorphous silicon of the part of illuminated PRK heated make its fusion (annealing); After by PRK scanning, the amorphous silicon of fusion cools off polycrystallization gradually, and crystalline growth is the state of polysilicon.
In the figure of Fig. 1, the irradiation of the PRK when expression is annealed to amorphous silicon through PRK can with the relation of the summary of the crystal grain diameter of polysilicon.The irradiation of the PRK when increasing annealing can the time, it is big that the crystal grain diameter of polysilicon also becomes.
Under the situation of weak (the scope A of Fig. 1), shown in Fig. 2 A, the particle diameter of the crystallization 201 of polysilicon film diminishes, and becomes the big state of fluctuation in the irradiation of the PRK in when annealing.Under such crystalline state, can't obtain stable properties as polysilicon membrane.
Relative therewith, when the energy settings of the PRK in the time will annealing is suitable scope (the scope B of Fig. 1), shown in Fig. 2 B, formed the more neat polysilicon film of particle diameter ratio of crystallization 202.Like this, when having obtained the film of the neat state of crystal grain diameter, can obtain stable properties as polysilicon film.
The irradiation of the PRK when further increase annealing can the time (the scope C of Fig. 1), it is big that the crystal grain diameter of polysilicon becomes.But when increasing the irradiation ability, it is big that the fluctuation of the growth rate of crystal grain becomes, and shown in Fig. 2 C, becomes the bigger polysilicon film of fluctuation of the particle diameter of crystallization 203, can't obtain stable properties as polysilicon film.
Therefore, the energy stabilization of the PRK that amorphous silicon is shone maintain in the scope of B of Fig. 1 and become important.
On the other hand, known in the polysilicon film that forms of amorphous silicon being annealed through PRK as patent documentation 3 is put down in writing, be formed with small projection in the grain boundary.
When such from being configured in 310 pairs inboard of light sources when having formed glass substrate 10 irradiates lights of such polysilicon film 301 shown in the image pattern 3 since the light of the small projection 302 of the grain boundary of polysilicon film 301 and scattering a side produces diffraction light on the surface of glass substrate 10.The position that this diffraction light produces is according to the spacing of the small projection 302 that forms from the light wavelength of light source 310 irradiations and grain boundary at polysilicon film 301 and different.
In structure shown in Figure 3; When the light wavelength with irradiated substrate 300 is made as λ; The spacing of the small projection 302 that will form in the grain boundary of polysilicon film 301 is made as P; The angle of the normal direction of the light of irradiated substrate 300 and substrate 300 is made as θ i, when diffraction light that will produce from substrate 300 is made as θ o with the angle of the normal direction of substrate 300, following relation establishment between them:
Sin θ i+sin θ o=λ/P (formula 1)
Therefore; Grain boundary at polysilicon film 301 forms under the state of small projection 302 with predetermined spacing P; Use is configured in the video camera 320 of the position of angle θ o and observes the diffraction light that light produced from light source 310 ejaculations from the wavelength X of angle θ i irradiation, can observe a diffraction light from polysilicon film 301.
On the other hand; The crystal grain diameter of polysilicon film 301; That kind as shown in Figure 1 exist with ... when annealing PRK irradiation can, the irradiation of the PRK of Fig. 1 can be in A, B and C zone, crystal grain diameter follow PRK irradiation can increase and become big.Therefore, the crystal grain diameter of polysilicon film 301 changed when the irradiation of PRK can change when annealing, and as Fig. 2 A ~ 2C was illustrated, it is big that the fluctuation of particle diameter becomes.Changing from 310 pairs of these crystal grain diameters of light source; The polysilicon film 301 of the state that the fluctuation change of the spacing of small projection 302 is big has shone under the situation of light; When the change in travel direction of a diffraction light that produces from polysilicon film 301; Mainly be that its intensity reduces, therefore, through the brightness minimizing of video camera 320 detected diffraction lights.
Like this; In that kind as shown in Figure 4; The irradiation of the PRK during annealing can be to big direction change; When the crystal grain diameter of polysilicon film 301 was all when becoming big and the irradiation of the PRK during annealing can all diminish to the crystal grain diameter of little direction change polysilicon film 301, the brightness that likewise produces a diffraction light reduced the phenomenon that the detected intensity of a diffraction light of video camera 320 reduces.
Therefore, the crystal grain diameter that only is difficult to differentiate polysilicon film 301 according to the detected intensity signal of a diffraction light of video camera 320 is that big state still is little state.
In order to address this problem; That kind as shown in Figure 5; Have two detection systems of different detection characteristic for the diffraction light setting from the small projection 302 of polysilicon film 301, use the output of each detection system, the state of variation that detects the crystal grain diameter of polysilicon film 301 gets final product.
That is, as shown in Figure 5, the irradiation of the PRK during with annealing can be made as x; To obtain a plurality of measured values; Suppose that they are that the distribute detection characteristic of first detection system obtained of 2 functions is made as f (x), the detection characteristic of the 2nd detection system is made as g (x), be expressed as
f（x）=a（x－α）
2+b，
Wherein, a, b are constants, and α is the x value of f (x) when becoming maximum,
g（x）=c（x－β）
2+d，
Wherein, c, d are constants, and β is the x value of g (x) when becoming maximum
At this moment, as the composite function of f (x) and g (x), following such definition EV (x).
EV（x）=－cf（x）+ag（x）
=-2ac (x+ac (the β of β-α)
2-α
2)+c (d-b) (formula 2)
That is, can EV (x) be expressed as the linear function of x, for example because become Fig. 6 that kind, obtain EV (x) through detecting f (x) and g (x), the irradiation that can obtain PRK thus clearly can x.
In the present invention; The illumination polysilicon membrane is provided; The image of the diffraction light that shooting produces because of the small projection of film surface; To shooting and the image of diffraction light handle, check that thus whether polysilicon membrane is formed on the substrate as the normal film of the neat state of the particle diameter of crystallization, estimates the method and the device thereof of the crystalline state of polysilicon membrane.
Below use the description of drawings embodiments of the invention.
(embodiment 1)
Fig. 7 representes that display panels of the present invention is with all structures of the polysilicon membrane testing fixture of glass substrate 700.
Polysilicon membrane testing fixture 700 is made up of substrate loading part 710, inspection portion 720, substrate unloading part 730, test section data processing/control part 740 and all control parts 750.
The display panels of inspection object is with glass substrate (below be designated as substrate) 300; Film for the amorphous silicon that on glass substrate 300, forms; Through the operation before this inspection operation subregion irradiation PRK is scanned heating, thus area heated is annealed, from the non-crystalline state crystallization; As shown in Figure 3, become the state of polysilicon membrane 301.Whether polysilicon membrane testing fixture 700 is taken the surface of substrate 300, investigate this polysilicon membrane 301 and normally form.
The substrate 300 of inspection object is set at loading part 710 through not shown delivery unit.The substrate 300 that not shown delivery unit through 750 controls of all control parts will be arranged on loading part 710 is transported to inspection portion 720.In inspection portion, possess inspection unit 720, control the state of the polysilicon membrane that inspection forms through inspection data processing/control module 740 on the surface of substrate 300.740 pairs of inspection units of inspection data processing/control module, 721 detected data are handled, and estimate the state of the polysilicon membrane 301 that on the surface of substrate 300, forms.
The substrate 300 that inspection finishes is transported to unloading portion 730 through the not shown delivery unit of all control part 750 controls from inspection portion 720, is taken out from testing fixture 700 by not shown operating unit.In addition, in Fig. 7, having represented in inspection portion 720, to possess the structure of an inspection unit 721, still, according to the area or the configuration of the polysilicon membrane 301 of size or the formation of the substrate 300 of inspection object, also can be 2 or more than 3.
Fig. 8 representes the structure of the inspection unit 721 in the inspection portion 720.
Lamp optical system 810 possesses: first light source 811 of launching the light of first wavelength X 1; Conversion is from first catoptron 812 of the light path of the light of first wavelength X 1 of first light source, 811 emissions; The light that convergence is carried out first wavelength X 1 after the conversion through 812 pairs of light paths of first catoptron forms linear light, and it is shone first cylindrical lens 813 of the glass substrate 300 that in substrate platform portion 830, keeps; The secondary light source 814 of the light of second wavelength X 2 that emission is longer than the light wavelength of first wavelength X 1; Conversion is from second catoptron 815 of the light path of the light of second wavelength X 2 of secondary light source 814 emissions; And assemble the light that carries out second wavelength X 2 after the conversion through 815 pairs of light paths of second catoptron and form linear light, it is shone second cylindrical lens 816 in zone of light of illuminated first wavelength X 1 of the glass substrate 300 that in substrate platform portion 830, keeps.
The light of the wavelength of the only 300nm ~ 700nm scope of the light of first wavelength X 1 and second wavelength X 2 for example uses laser diode in first light source 811 and secondary light source 814.
First cylindrical lens 813 can throw light on the size coupling ground of inspection area on the substrate 300 in order to make the light that is changed first wavelength X 1 after the light paths by first catoptron 812 from the emission of first light source 811 efficiently; Illuminating bundle is focused at a direction, cross sectional shape is formed long in one direction linear shape.From the angle direction light that 300 irradiations are assembled through first cylindrical lens 813 in one direction to substrate with respect to normal direction θ 1; The illumination light quantity of the inspection area on the substrate 300 increases thus, can detect the higher image of contrast through image pickup optical system 820.
Second cylindrical lens 816 is also in order to throw light on the light that is changed second wavelength X 2 after the light paths by second catoptron 815 from secondary light source 814 emission with the inspection area that first cylindrical lens 813 shone the light of first wavelength X 1 of passing through on the substrate 300 matchingly efficiently; Illuminating bundle is focused at a direction, cross sectional shape is formed long in one direction linear shape.From the angle direction light that 300 irradiations are assembled through second cylindrical lens 816 in one direction to substrate with respect to normal direction θ 2; The illumination light quantity of the inspection area on the substrate 300 increases thus, can detect the higher image of contrast through image pickup optical system 820.
Image pickup optical system 820 possesses: first camera 823, the first imaging len system 822 that it possesses optionally first wavelength selective filters 821 of the light that sees through first wavelength and the image of a diffraction light that the light of first wavelength X 1 that seen through first wavelength selective filters 821 is produced from substrate 300 is taken; Second camera 826, the second imaging len system 825 that it possesses optionally second wavelength selective filters 824 of the light that sees through second wavelength and the image of a diffraction light that the light of second wavelength that seen through second wavelength selective filters 824 is produced from substrate 300 is taken.
Wavelength selective filters 821 optionally sees through the light from first wavelength in the diffraction light of substrate 300, can interdict the light from the wavelength beyond the light of first wavelength of substrate 300 and periphery.
Wavelength selective filters 823 optionally sees through the light from second wavelength in the diffraction light of substrate 300, can interdict the light from the wavelength beyond the light of second wavelength of substrate 300 and periphery.
Promptly; According to the light of the light wavelength λ 1 of the spacing P1 of the microspike 302 of the grain boundary of polysilicon membrane 301 and first wavelength and first wavelength incident angle θ 1 with respect to substrate 300; The relation of through type 1 decides the inclination angle theta 3 of first camera 823.
That is, according to the light of the light wavelength λ 2 of the spacing P2 of the microspike 302 of the grain boundary of polysilicon membrane 301, second wavelength and second wavelength incident angle θ 2 for substrate 300, the relation of through type 1 decides the inclination angle theta 4 of second video camera 826.
At this moment; When being set at the light wavelength λ 1 of first wavelength light wavelength λ 2 that is shorter than second wavelength; The spacing P1 of microspike 302 is set at the spacing P2 less than microspike 302; And when being set at greater than the light of second wavelength for the incident angle θ 2 of substrate 300 for the incident angle θ 1 of substrate 300 light of first wavelength; Can set the inclination angle theta 3 of first camera 823 enough littler, first camera 823 and second camera 826 can be set above substrate platform 831 with interfering with one another than the inclination angle theta 4 of second camera 826.
In addition; First camera 823 is arranged on the position of detection from a diffraction light of the microspike 302 of spacing P1; Second camera 826 is arranged on the position of detection from a diffraction light of the microspike 302 of spacing P2; Thus, can obtain two different family curves of peak shown in Figure 5, can obtain the relation of linear function EV (x) shown in Figure 6 according to the detection signal of each camera.
Detecting data processing/control part 840 possesses: the A/D transformation component 841 that will be transformed to data image signal from the analog picture signal of first camera, 823 outputs; To be transformed to the A/D transformation component 842 of data image signal from the analog picture signal of second camera, 826 outputs; Use (formula 1) computing to carry out the data image signal after the A/D conversion respectively, calculate the operational part 843 of energy of the PRK of the polysilicon film 301 on the irradiated substrate 300 through A/D transformation component 841 and A/D transformation component 842; Through operational part 843 obtain each the regional PRK on the substrate 300 irradiation can distribution carry out the processing detection unit 844 of image conversion; The input and output portion 845 that possesses the display part 8451 of display process detection unit 844 process result; The power supply unit 846 of first light source 811 and secondary light source 814; The driver element control part 847 of the driver element 832 of control basal plate platform portion 830; And the control part 848 of control operational part 843, processing detection unit 844, efferent 845, power supply unit 846 and driver element control part 847.
In addition, control part 847 is connected with all control parts 750.
Through such structure; Lamp optical system 810 is placed on the substrate 300 on the substrate platform 831 from back lighting; Take the picture of a diffraction light that produces by the light that sees through substrate 300 through image pickup optical system 820; Handle the crystalline state of the polysilicon membrane 301 that inspection forms on substrate 300 through inspection data processing/control part.
Then, explain and pass through the anneal method of state of polysilicon membrane 301 of polycrystallization of PRK on the inspection unit 721 inspection substrates 300 that use structure shown in Figure 8.
The flow process of processing of the inspection area of the polysilicon membrane 301 that the annealing of passing through PRK of inspection on the substrate 300 forms at first, is described.Inspection handle the shooting flow process predetermined zone of pair substrate 300 is arranged or take comprehensively and to shooting and image carry out the flow process of the Flame Image Process of processing and detecting defect part.
At first, use Fig. 9 that the shooting flow process is described.
At first; For the inspection starting position of the inspection area that makes polysilicon membrane 301 enters into first camera 823 of image pickup optical system 820 and the visual field of second camera 826; Drive driver element 832 through driver element control part 847; The position of control basal plate platform 831 is set at reference position (detection starting position) (S901) with substrate 300.
Then; Through power control part 846 control first light source 811 and secondary light source 814, respectively the same area irradiation of the polysilicon membrane on the substrate 300 301 is formed the light of the first linear wavelength, forms the light (S902) of the second linear wavelength through second cylindrical lens 816 through first cylindrical lens 813 with the incident angle of the incident angle of θ 1, θ 2.For the shooting area that makes image pickup optical system 820 along being moved by the inspection area of the polysilicon membrane 301 of the optical illumination of the light of first wavelength and second wavelength through lamp optical system 810; Through driver element control part 847 control drive unit 832, make 831 beginnings of substrate platform move (S903) with certain speed.
When substrate platform 831 is moved with certain speed; Take the optical imagery of a diffraction light that produces in the direction of θ 3 from the microspike 302 of the grain boundary of the long surveyed area of a direction of polysilicon membrane 301 via wavelength selective filters 821 through first camera 823, this polysilicon membrane 301 is that first cylindrical lens 813 through lamp optical system 810 forms linear and with the optical illumination of first wavelength of the angle incident of θ 1.In addition; Simultaneously take the optical imagery of a diffraction light that produces in the direction of θ 4 from the microspike 302 of the grain boundary of the long inspection area of a direction of polysilicon membrane 301 via wavelength selective filters 824 through second camera 826, second cylindrical lens 816 of this polysilicon membrane 301 through lamp optical system 810 forms linear and with the optical illumination (S904) of second wavelength of the angle incident of θ 2.
Be input to the A/D transformation component 841 of inspection data processing/control part 840 to detection signal, after carrying out the A/D conversion, be imported into arithmetic processing section 843 from first camera 823 that the optical imagery of a diffraction light of the light of first wavelength is taken.Be input to the A/D transformation component 842 of inspection data processing/control part 840 to detection signal, after carrying out the A/D conversion, be input to arithmetic processing section 843 from second camera 826 that the optical imagery of a diffraction light of the light of second wavelength is taken.Use is input to detection signal, first digital picture of the generation signal that 823 shootings obtain based on first camera and second digital picture (S905) of the signal that 826 shootings obtain based on second camera of arithmetic processing section 843 via the position information process of the substrate platform 831 of driver element control part 847 acquisitions.Repeat above operation, till the inspection along the delegation of directions X or Y direction finishes (S906).
Then, whether inspection has the regional adjacent inspection area (S907) with Insp'd delegation, under the situation with adjacent not inspection area, makes substrate platform 831 move to adjacent inspection area (S908), repeats the step that begins from S903.If the regional complete inspection that should check finishes, then stop to move (S909) of XY platform, through power control part 846 controls first light source 811 and secondary light source 814, close illumination (S910) thus, finish to take flow process.
Then, use Figure 10 to explain and handle first digital picture of the shooting flow process acquisition of passing through S905 and the Flame Image Process flow process of second digital picture.
Be input to processing detection unit 844 (S1001) generate first digital picture and second digital picture that generate through arithmetic processing section 843 in the step (S905) in the digital picture of taking flow process; With first digital picture and second digital picture synthetic (S1002); Use the arithmetic expression shown in (formula 2) that the picture signal of the correspondence of first digital picture and second digital picture is handled; Thus, calculating the irradiation of the irradiated PRK in position of the correspondence of polysilicon film 301 across the predetermined zone of substrate 300 can (S1003).Across the predetermined zone of substrate 300 judge the irradiation of this PRK that calculates can whether enter in the irradiation energy range of predefined benchmark or greater than still less than (S1004).
Then; According to the result who judges across the predetermined zone of substrate 300; The map of the irradiation ability intensity of the PRK in the predetermined zone of generation substrate 300, and in the display frame 8451 of input and output portion 845, show (S1005), the flow process of end process/judgement.On the irradiation of the PRK that shows in this display frame 8451 can the map of intensity, in S1004, can show that distinctively irradiation energy range than predefined benchmark is big or be judged as bad zone for a short time with normal zone.In addition, import from input and output portion 845 under the situation that has changed determinating reference,, change ground and show defective region according to the determining defects benchmark of this change.
Figure 11 representes an example of the check result display frame 1100 of demonstration in the display part 8451.
Check result display frame 1100 is shown in figure 11, on a picture, show the substrate specifying part 1101 be used for specifying the display object substrate, support to carry out appointment substrate demonstration executive button 1102, be used to show substrate that the irradiation of all PRKs of the substrate of appointment can intensity distributions all distribute viewing area 1103, be used to specify the zone of the enlarged and displayed that the irradiation of all PRKs of the substrate that substrate all shows as viewing area 1103 can intensity distributions enlarged and displayed designating unit 1104, can intensity distributions carry out the enlarged and displayed zone 1105 of enlarged and displayed and the check result display part 1106 that is used for the check result of display base plate to the irradiation of the PRK in the zone of enlarged and displayed designating unit 1104 appointments.
In the irradiation of all PRKs of the substrate that substrate shows in all as viewing area 1103 can the image of intensity distributions, stress the result of display image processings/detection unit 844 judgements.That is, changing color respectively shows through Flame Image Process/detection unit 844 and is judged to be than the irradiation energy range of benchmark big or little bad zone and is judged to be normal zone.
Figure 12 A and Figure 12 B are illustrated in the substrate example that the irradiation of the PRK that shows in the viewing area 1103 can intensity distributions that all distributes.
Figure 12 A representes substrate all is divided into rectangular, is presented at the example of the irradiation ability of the PRK that calculates through S1003 in each zone with 256 grades of gray scales according to energy.
In addition, expression is according to the result who judges at S1004 in Figure 12 B, and it is big and be judged as bad zone and littler and be judged as the example that bad zone shows than the irradiation energy range of benchmark to discern irradiation energy range than benchmark.
Structure through above-mentioned checks, can keep the quality of display panels with glass substrate than the highland with higher accuracy checking through the anneal crystalline state of the polysilicon membrane that forms of PRK according to present embodiment 1.
In addition, the structure of throwing light on through the long zone of a direction of in lamp optical system 200, using on 205 pairs of substrates 1 of cylindrical lens is illustrated, and still, its lens that are replaced as common circle also can be obtained same effect.
(embodiment 2)
In embodiment 1, in lamp optical system 810, used two light sources of the light of emission different wave length, still, the example that has used the single light source of the light of launching a plurality of wavelength as light source is described in the present embodiment.Display panels among the embodiment 2 is identical with the structure of use Fig. 7 explanation among the embodiment 1 with all structures of the polysilicon membrane testing fixture of glass substrate, therefore omits its detailed explanation.
In addition; The image pickup optical system 820 of explanation and substrate platform portion 830 among the structure of the image pickup optical system among the embodiment 2 and substrate platform portion, inspection data processing/control part and action thereof, effect and the embodiment 1, inspection data processing/control part 840 are identical, therefore omission explanation.
Figure 13 representes the structure of the lamp optical system 1310 in the present embodiment.Lamp optical system 1310 in the present embodiment possesses: the light source 1311 of launching the light of a plurality of wavelength that comprise wavelength X 1 and λ 2; The light of reflected wavelength lambda 1 sees through first dichronic mirror 1312 of the light of the wavelength beyond it; The light of the wavelength X 2 in the light of reflecting & transmitting first dichronic mirror 1312 sees through second dichronic mirror 1313 of the light of the wavelength beyond it; The catoptron 812 that the light path of the light of the wavelength X 1 of first dichronic mirror 1312 reflection is carried out conversion; Form linear light to optical convergence in a direction, from remain on first cylindrical lens 813 of the substrate 300 on the substrate platform 831 with respect to the direction irradiation of normal direction θ 1 through the wavelength X 1 after the catoptron 812 conversion light paths; The catoptron 815 that the light path of the light of the wavelength X 2 of second dichronic mirror 1313 reflection is carried out conversion; And form linear light to the optical convergence through the wavelength X 2 after the catoptron 815 conversion light paths in a direction, from remain on second cylindrical lens 816 of the substrate 300 on the substrate platform 831 with respect to the direction irradiation of normal direction θ 2.
In said structure, the light of launching from light source 1311 incides first dichronic mirror 1312, and the light of wavelength X 1 is reflected, light transmission first dichronic mirror 1312 of other wavelength.The light of the wavelength X 1 of first dichronic mirror, 1312 reflections is input to catoptron 812, carries out total reflection, and the conversion light path is input to first cylindrical lens 813.The light that incides the wavelength X 1 of first cylindrical lens 813 is dwindled to gather on the direction; Form the linear shape of not assembling to other direction (direction vertical of Figure 13) with paper; Identical with the situation of embodiment 1, incide the substrate 300 that keeps at substrate platform 831 from angle direction with respect to normal direction θ 1.
On the other hand, the light that sees through first dichronic mirror 1312 from light source 1311 emissions incides second dichronic mirror 1313, and the light of wavelength X 2 is reflected, light transmission second dichronic mirror 1313 of other wavelength.The light of the wavelength X 2 of second dichronic mirror, 1313 reflections incides catoptron 815, carries out total reflection and comes the conversion light path, incides second cylindrical lens 816.The light that incides the wavelength X 2 of second cylindrical lens 816 is dwindled accumulates in a direction; Form the linear shape of not assembling to other direction (relation vertical of Figure 13) with paper; Identical with the situation of embodiment 1, incide the illuminated zone that forms the light of linear wavelength X 1 through first cylindrical lens 813 of the substrate 300 that keeps at substrate platform 831 from angle direction with respect to normal direction θ 2.
In the present embodiment; The picture of the diffraction light that the substrate 300 from the light of the light that shone wavelength X 1 and wavelength X 2 is produced through image pickup optical system is taken; The flow process of using Fig. 9 and Figure 10 to describe among shooting flow process of signal being handled through inspection data processing/control part and Flame Image Process flow process and the embodiment 1 is identical, therefore omission explanation.
According to present embodiment,, therefore, can design lamp optical system compactly according to the light source of lamp optical system is made one.
(embodiment 3)
In embodiment 2; The single light source of the light of a plurality of wavelength that in lamp optical system 1310, use emission to comprise wavelength X 1 and λ 2 has been described; Use the light of two dichronic mirror separate wavelengths λ 1 and the light of wavelength X 2, incide the structure of substrate 300 respectively from the angle direction of the angle direction of θ 1 and θ 2, still; In the present embodiment, the light of single light source emission of light that uses Figure 14 explanation to comprise emission a plurality of wavelength of wavelength X 1 and λ 2 shines directly into the example on the substrate 300.Display panels among the embodiment 3 is identical with the structure of use Fig. 7 explanation among the embodiment 1 with all structures of the polysilicon membrane testing fixture of glass substrate, therefore omits its detailed description.
In addition, in structure shown in Figure 14, for embodiment 1 in the identical structure of the structure of in Fig. 8, putting down in writing of explanation give identical numbering, and omit its detailed description.Different with the structure of embodiment 1 is lamp optical system 1410 and image pickup optical system 1420.
Wherein, Lamp optical system 1410 possesses: the light source 1411, conversion of light with certain wavelength width of emission from the catoptron 812 of the light path of the light of light source 1411 emissions, assemble the light that light path is carried out after the conversion through catoptron 812 and form linear light, be radiated at the cylindrical lens 813 of the glass substrate 300 that substrate platform 831 keeps from direction with respect to normal direction θ 10.
In addition; Image pickup optical system 1420 possesses first camera 823; It possesses first wavelength selective filters 1421 and the first imaging len system 822; Wherein, First wavelength selective filters 1421 sees through to have shone through cylindrical lens 813 and forms in the diffraction light that the place, grain boundary of the polysilicon membrane 301 on the linear glass substrate 300 with the wide light of certain wavelength produces, and at a diffraction light of the wavelength X 1 of advancing with respect to the direction of normal direction angle θ 3, the picture of a diffraction light of the wavelength X 1 that sees through this first wavelength selective filters 1421 is taken by the first imaging len system 822; Second video camera 826; It possesses second wavelength selective filters 1424 and the second imaging len system 825; Wherein, Wavelength selective filters 1424 see through in the diffraction light that produces through microspike, at a diffraction light of the wavelength X 2 of advancing with respect to the direction of normal direction angle θ 4, the picture of a diffraction light of the wavelength X 2 that sees through this second wavelength selective filters 1421 is taken by the second imaging len system 825.
In the present embodiment; Use the flow process of Fig. 9 and Figure 10 explanation identical among shooting flow process and the Flame Image Process flow process of the detection signal from first camera 823 and second camera 826 being carried out signal Processing through inspection data processing/control part and the embodiment 1, so the omission explanation.
According to present embodiment, compare with embodiment 2 and can design lamp optical system more compactly.
Claims (16)
1. polysilicon membrane testing fixture, it possesses substrate loading part, inspecting substrate portion, substrate unloading part and all control parts, and this polysilicon membrane testing fixture is characterised in that,
Said inspecting substrate portion possesses:
First lighting unit, it shines the light of first wavelength to the substrate that has formed polysilicon membrane from the teeth outwards from first direction;
Second lighting unit, its from second direction to said substrate pass through said first lighting unit illuminated the light of area illumination second wavelength of light of said first wavelength;
First image unit; It takes the optical imagery based on the first diffraction lights of the light of said first wavelength that produces at third direction from said substrate, said substrate through said first lighting unit and said second lighting unit illuminated light and the light of said second wavelength of first wavelength;
Second image unit; It takes the optical imagery based on the second diffraction lights of the light of said second wavelength that upwards produces in the four directions from said substrate, said substrate through said first lighting unit and said second lighting unit illuminated light and the light of said second wavelength of first wavelength; And
Signal Processing/identifying unit; The signal that it gets the optical imagery of taking said the first diffraction lights through said first image unit and take the signal that the optical imagery of said the second diffraction lights gets through said second image unit and handle is judged the state of the crystallization of the polysilicon film that on said substrate, forms.
2. polysilicon membrane testing fixture according to claim 1 is characterized in that,
Said first lighting unit possesses first light source portion of the light of emission first wavelength; And will form linear light from the optical convergence of first wavelength of this first light source portion emission in one direction, and shining first cylindrical lens of said substrate, said second lighting unit possesses the secondary light source portion of the light of emission second wavelength; And will form linear light from the optical convergence of second wavelength of this secondary light source portion emission in one direction, shine second cylindrical lens of said substrate.
3. polysilicon membrane testing fixture according to claim 1 is characterized in that,
The total emission of said first lighting unit and said second lighting unit comprises the light source portion of light of multi-wavelength of light of light and said second wavelength of said first wavelength; The light that said first lighting unit possesses said first wavelength the light of the multi-wavelength of launching from said light source portion reflects, and makes first dichronic mirror of the light transmission of other wavelength; And the optical convergence of said first wavelength that will be through the reflection of this first dichronic mirror in one direction; Form first cylindrical lens that linear light shines said substrate; The light that said second lighting unit possesses second wavelength in the light that has seen through said first dichronic mirror the light of the multi-wavelength of launching from said light source portion reflects, and makes second dichronic mirror of the light transmission of other wavelength; And the optical convergence of said second wavelength that will be through the reflection of this second dichronic mirror in one direction, forms second cylindrical lens that linear light shines said substrate.
4. polysilicon membrane testing fixture according to claim 1 is characterized in that,
Dispose said first lighting unit and said second lighting unit greater than said second direction with respect to the mode of the angle of the normal to a surface direction of said substrate with respect to the angle of the normal to a surface direction of said substrate with said first direction, dispose said first image unit and said second image unit less than said four directions to mode with respect to the angle of the normal to a surface direction of said substrate with respect to the angle of the normal to a surface direction of said substrate with said third direction.
5. according to each described polysilicon membrane testing fixture in the claim 1 ~ 4, it is characterized in that,
The light wavelength of said first wavelength is shorter than the light wavelength of said second wavelength.
6. polysilicon membrane testing fixture, it possesses substrate loading part, inspecting substrate portion, substrate unloading part and all control parts, and this polysilicon membrane testing fixture is characterised in that,
Said inspecting substrate portion possesses:
Lighting unit, it is to formed the substrate irradiates light of polysilicon membrane from the teeth outwards;
First image unit, its take from through said lighting unit illuminated the optical imagery of the first diffraction lights producing at first direction of the said substrate of light;
Second image unit, its take from through said lighting unit illuminated the said substrate of light at the optical imagery of the second diffraction lights of second direction generation; And
Signal Processing/identifying unit; The signal that it gets the optical imagery of taking said the first diffraction lights through said first image unit and take the signal that the optical imagery of said the second diffraction lights gets through said second image unit and handle is judged the crystalline state of the polysilicon film that on said substrate, forms.
7. polysilicon membrane testing fixture according to claim 6 is characterized in that,
Said first image unit possesses the light transmission that makes first wavelength and first wavelength selective filters that interdicts the light of other wavelength; Shooting is based on the optical imagery of said the first diffraction lights of the light of first wavelength that has seen through this first wavelength selective filters; Said second image unit possesses the light transmission that makes second wavelength and second wavelength selective filters that interdicts the light of other wavelength, takes the optical imagery based on said the second diffraction lights of the light of second wavelength that has seen through this second wavelength selective filters.
8. polysilicon membrane testing fixture according to claim 7 is characterized in that,
The light wavelength of said first wavelength is shorter than the light wavelength of said second wavelength, said first direction with respect to the pitch angle of the normal direction of said substrate less than the pitch angle of said second direction with respect to the normal direction of said substrate.
9. a polysilicon membrane inspection method is characterized in that,
From first direction the substrate that has formed polysilicon membrane is from the teeth outwards shone the light of first wavelength,
From the light of second direction to area illumination second wavelength of the light of illuminated said first wavelength of said substrate,
The optical imagery that shooting produces at third direction from the said substrate of the light of the light of illuminated said first wavelength and said second wavelength based on the first diffraction lights of the light of said first wavelength,
The optical imagery that shooting upwards produces in the four directions from the said substrate of the light of the light of illuminated said first wavelength and said second wavelength based on the second diffraction lights of the light of said second wavelength,
To the optical imagery of taking said the first diffraction lights and signal with the optical imagery of taking said the second diffraction lights and signal handle, judge the crystalline state of the polysilicon film that on said substrate, forms.
10. polysilicon membrane inspection method according to claim 9 is characterized in that,
Will be in one direction through first cylindrical lens from the optical convergence of first wavelength of first light source portion emission; Form linear light, come to shine said substrate, carry out shining the light of said first wavelength thus from said first direction from first direction; Will be in one direction through second cylindrical lens from the optical convergence of second wavelength of secondary light source portion emission; Form linear light, come to shine said substrate, carry out shining the light of said second wavelength thus from said second direction from second direction.
11. polysilicon membrane inspection method according to claim 9 is characterized in that,
Optical convergence through using first cylindrical lens to be used for to reflect said first wavelength that is reflected from first dichronic mirror of the light of said first wavelength of the light of light source portion emission in one direction; Forming linear light to shine said substrate from said first direction; Carry out shining the light of said first wavelength thus from said first direction; Optical convergence through using second cylindrical lens to be used for to reflect said second wavelength that is reflected from second dichronic mirror of the light of second wavelength of the light of light source portion emission is in a direction; Forming linear light to shine said substrate from said second direction; Carry out shining from said second direction the light of said second wavelength thus, said light emitted comprises the light of multi-wavelength of light of light and said second wavelength of said first wavelength.
12. polysilicon membrane inspection method according to claim 9 is characterized in that,
The said first direction that shines the light of said first wavelength is the big angle direction of the said second direction of normal to a surface direction ratio of said relatively substrate, and the said four directions of normal to a surface direction ratio of taking said third direction based on the optical imagery of the first diffraction lights of the light of said first wavelength and be said relatively substrate is to little angle direction.
13. according to each described polysilicon membrane inspection method in the claim 9 ~ 12, it is characterized in that,
The light wavelength of said first wavelength is shorter than the light wavelength of said second wavelength.
14. a polysilicon membrane inspection method is characterized in that,
To having formed the substrate irradiates light of polysilicon membrane from the teeth outwards,
The optical imagery of the first diffraction lights that shooting produces at first direction from the said substrate of illuminated this light,
The optical imagery of the second diffraction lights that shooting produces in second direction from the said substrate of illuminated said light,
To the optical imagery of taking said the first diffraction lights and signal with the optical imagery of taking said the second diffraction lights and signal handle, judge the crystalline state of the polysilicon film that on said substrate, forms.
15. polysilicon membrane inspection method according to claim 14 is characterized in that,
Interdict first wavelength selective filters of the light of other wavelength via the light transmission that makes first wavelength; The optical imagery of the first diffraction lights that shooting produces at first direction from irradiated said substrate; Interdict second wavelength selective filters of the light of other wavelength via the light transmission that makes second wavelength, take the optical imagery of the second diffraction lights that produce in second direction from irradiated said substrate.
16. polysilicon membrane inspection method according to claim 15 is characterized in that,
The light wavelength of said first wavelength is shorter than the light wavelength of said second wavelength, said first direction with respect to the pitch angle of the normal direction of said substrate less than the pitch angle of said second direction with respect to the normal direction of said substrate.
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| JP2011-112128 | 2011-05-19 | ||
| JP2011112128A JP2012243929A (en) | 2011-05-19 | 2011-05-19 | Inspection method and device of polycrystalline silicon thin film |
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| TW201248692A (en) | 2012-12-01 |
| JP2012243929A (en) | 2012-12-10 |
| KR20120129803A (en) | 2012-11-28 |
| KR101352702B1 (en) | 2014-01-16 |
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Application publication date: 20121121 |