JP2007256272A - Surface inspection apparatus - Google Patents

Surface inspection apparatus Download PDF

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JP2007256272A
JP2007256272A JP2007042241A JP2007042241A JP2007256272A JP 2007256272 A JP2007256272 A JP 2007256272A JP 2007042241 A JP2007042241 A JP 2007042241A JP 2007042241 A JP2007042241 A JP 2007042241A JP 2007256272 A JP2007256272 A JP 2007256272A
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wafer
inspection apparatus
surface inspection
inspection
image
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JP5085953B2 (en
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Yasushi Azuma
裕史 東
Tetsuya Watanabe
哲也 渡邉
Kenji Aiko
健二 愛甲
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide surface inspection apparatus with functionality to easily can observe and track condition of defective wafer end throughout process. <P>SOLUTION: A wafer surface inspection apparatus for inspecting wafer circumference comprises lens system and CCD camera to photograph the image of the wafer circumference, a memory means for storing the photographed image data, and display means for displaying the image data stored in a memory device. Furthermore, more specifically, it also is characterized by own functionality that it is put on pre-alignment section to turn wafer, uses lens system and CCD camera to record images of corresponding to a full circumference around the wafer edge in the area for performing alignment of orientation flat section or notch section of wafer, and saves these images in a memory device, to be displayed on CRT. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、被検査物の表面に存在する異物、きず、欠陥、汚れ等（以下、これらを総称して異物と称す）を光学的に検査する表面検査装置に関する。例えば、シリコンウエハ、半導体ウエハ、ガラス基板等の板状に形成された被検査物の端部を観察、検査する技術に関する。   The present invention relates to a surface inspection apparatus that optically inspects foreign matter, scratches, defects, dirt, and the like (hereinafter collectively referred to as foreign matter) present on the surface of an object to be inspected. For example, the present invention relates to a technique for observing and inspecting an end portion of an inspection object formed in a plate shape such as a silicon wafer, a semiconductor wafer, or a glass substrate.

半導体ウエハの表面を検査する表面検査装置は、例えば、特開２００５−１５６５３７号公報（特許文献１）に示される。   A surface inspection apparatus for inspecting the surface of a semiconductor wafer is disclosed in, for example, Japanese Patent Laid-Open No. 2005-156537 (Patent Document 1).

ウエハ表面検査装置は、レーザ光等の光ビームを半導体ウエハの表面へ照射して、半導体ウエハの表面で発生した反射光又は散乱光を受光素子で検出することにより、半導体ウエハの表面に存在する異物を検出する。   A wafer surface inspection apparatus exists on the surface of a semiconductor wafer by irradiating the surface of the semiconductor wafer with a light beam such as a laser beam and detecting reflected light or scattered light generated on the surface of the semiconductor wafer with a light receiving element. Detect foreign objects.

ウエハの表面を検査できる領域は、表面にパターンが形成されているか否かに係わらず、ウエハ端部を除く領域である。ウエハ端部とは、シリコンウエハを板状に形成する際の、角度をもってカットされたエッジ部分と、チップが完全に形成されてない周辺部とを含む領域を指す。   The area where the surface of the wafer can be inspected is an area excluding the edge of the wafer regardless of whether a pattern is formed on the surface. The wafer end portion refers to a region including an edge portion cut with an angle and a peripheral portion where chips are not completely formed when a silicon wafer is formed in a plate shape.

ウエハ端部のエッジ部分は、表面に対して角度を持っているため、エッジ部分に照射された光の反射光又は散乱光は、受光素子に入力されない。   Since the edge portion of the wafer end portion has an angle with respect to the surface, the reflected light or scattered light of the light irradiated on the edge portion is not input to the light receiving element.

また、チップが完全に形成されていない周辺部は、膜残り、膜はがれ等が多く、照射された光の反射光または散乱光は、強い乱反射を起こし、表面検査装置の検出感度を低下させる。   Further, in the peripheral portion where the chip is not completely formed, the film remains, the film peels off, etc., and the reflected light or scattered light of the irradiated light causes strong irregular reflection and lowers the detection sensitivity of the surface inspection apparatus.

このため、従来の検査領域はウエハ端部の領域を除いた設定であった。   For this reason, the conventional inspection area is set to exclude the wafer edge area.

しかし、ウエハの大口径化によって、ウェハ外周ぎりぎりまで有効なチップを形成することが可能となってきた。そのため、ウエハ端部の膜残りや膜はがれ等は、ウエハ表面の異物となる可能性が高まり、歩留まりに大きく影響するようになってきている。   However, as the diameter of the wafer is increased, it has become possible to form chips that are effective up to the very edge of the wafer. For this reason, the film residue or film peeling at the edge of the wafer is more likely to become a foreign substance on the wafer surface, and the yield is greatly affected.

特開２００５−１５６５３７号公報JP 2005-156537 A

従来、表面検査装置で検出した不良ウエハ表面の異物は、それが異物か、若しくはウエハ端部の荒れの影響によるものかを確認する手段として、光学顕微鏡で観察、比較し、原因（因果関係）を調査していた。   Conventionally, the foreign matter on the surface of a defective wafer detected by a surface inspection apparatus is observed and compared with an optical microscope as a means for confirming whether it is a foreign matter or due to the effect of surface roughness of the wafer, and the cause (causal relationship) Was investigating.

このため、原因究明には莫大な時間が掛かり、プロセスへのフィードバックが遅れる原因となっていた。このプロセスへのフィードバックの遅れによって、歩留まり改善への対応が遅れ、不良品を多量に製造するという課題があった。   For this reason, investigating the cause took enormous time, which caused delay in feedback to the process. Due to the delay in feedback to this process, the response to yield improvement was delayed, and there was a problem of producing a large amount of defective products.

本発明は上述した課題に対処して、不良が発生したウエハの端部の状態をプロセス全体にわたって容易に観察、追跡ができる機能を有する表面検査装置を提供することを目的とする。   SUMMARY OF THE INVENTION An object of the present invention is to provide a surface inspection apparatus having a function capable of easily observing and tracking the state of an end portion of a wafer where a defect has occurred, over the entire process, in response to the above-described problems.

本発明は、ウエハ外周部を検査するウエハ表面検査装置において、ウエハ外周部の画像を撮るレンズ系およびＣＣＤカメラと、撮った画像データを記憶する記憶手段と、記憶装置に記憶されている画像データを表示する表示手段とを有することを特徴とする。   The present invention relates to a wafer surface inspection apparatus for inspecting a wafer outer peripheral portion, a lens system and a CCD camera for taking an image of the wafer outer peripheral portion, storage means for storing captured image data, and image data stored in the storage device. Display means for displaying.

更に、具体的に述べると、本発明はプリアライメント部に載せてウエハを回転させ、ウエハのオリエンテーションフラット部あるいはノッチ部の位置合わせを行う部位に、レンズ系とＣＣＤカメラにより、ウエハ端部の外周１週分の画像を記録し、記憶装置に取り込み、ＣＲＴ上に表示させる機能を有することを特徴とする。   More specifically, in the present invention, the wafer is rotated on the pre-alignment section, and the wafer is aligned at the position where the orientation flat section or notch section of the wafer is aligned by the lens system and the CCD camera. One week worth of images are recorded, loaded into a storage device, and displayed on a CRT.

本発明の一つの特徴によれば、ウエハの端部の状態を全体にわたって容易に観察できる。   According to one aspect of the present invention, the state of the edge of the wafer can be easily observed throughout.

また、本発明の他の特徴によれば、歩留まりに影響するウエハ端部の状態を表面の検査結果と関連付けて容易に解析することができ、不良発生時のプロセスへのフィードバックを迅速に行える。   Further, according to another feature of the present invention, the state of the wafer edge that affects the yield can be easily analyzed in association with the surface inspection result, and feedback to the process when a defect occurs can be performed quickly.

また、本発明のその他の特徴によれば、プロセス間の状態を監視することにより、ウエハ端部の異物起因の不良を未然に防ぐことができる。   In addition, according to another feature of the present invention, it is possible to prevent defects caused by foreign matter at the wafer edge by monitoring the state between processes.

本発明の表面検査装置は、半導体ウェハや絶縁体ウェハ（例えば、サファイアガラスウェハ，石英ガラスウェハなど）、若しくは液晶パネル表示装置用ガラス基板などの平板状の被検査物へ適用できる。   The surface inspection apparatus of the present invention can be applied to a flat inspection object such as a semiconductor wafer, an insulator wafer (for example, a sapphire glass wafer, a quartz glass wafer, etc.) or a glass substrate for a liquid crystal panel display device.

以下の実施例では、半導体ウェハの表面検査に適用した実施例について、図面を引用して説明する。   In the following examples, examples applied to the surface inspection of a semiconductor wafer will be described with reference to the drawings.

図１は、本発明の実施例１の表面検査装置の構成を示す図である。   FIG. 1 is a diagram illustrating a configuration of a surface inspection apparatus according to a first embodiment of the present invention.

図２は、本発明の実施例１の表面検査装置のハード的な構成を示すブロック図である。   FIG. 2 is a block diagram illustrating a hardware configuration of the surface inspection apparatus according to the first embodiment of the present invention.

図１及び図２に示す本実施例の検査装置は、ウェハ１００（被検査物）の異物を検査する表面検査装置１と、異物の検査データとウエハ１００における端部３の画像データとを関連付けて情報処理を行う制御部１０と、上位管理装置や他の検査装置、若しくは製造装置のパーソナルコンピュータ（情報処理装置）１２にデータを送信するＬＡＮ１１などから構成される。   The inspection apparatus of the present embodiment shown in FIGS. 1 and 2 associates the surface inspection apparatus 1 that inspects the foreign matter on the wafer 100 (inspected object), the inspection data of the foreign matter, and the image data of the end 3 of the wafer 100. A control unit 10 that performs information processing, and a LAN 11 that transmits data to a host management device, another inspection device, or a personal computer (information processing device) 12 of a manufacturing apparatus.

表面検査装置１のプリアライメント部２には、ウエハ１００の端部３を照明する光源４と、端部３の画像を拡大するレンズ系５と、画像を電気信号に変換する１次元のＣＣＤカメラ６が配設されている。   The pre-alignment unit 2 of the surface inspection apparatus 1 includes a light source 4 that illuminates the end 3 of the wafer 100, a lens system 5 that magnifies the image of the end 3, and a one-dimensional CCD camera that converts the image into an electrical signal. 6 is disposed.

プリアライメント部２に配設されたＣＣＤカメラ６は、ウェハカセット（図省略）やポッド（図省略）より搬出されたウェハ１００がプリアライメント部２にてプリアライメントされる過程で、端部３の画像データを採取する。   The CCD camera 6 disposed in the pre-alignment unit 2 is in the process of prealigning the wafer 100 unloaded from the wafer cassette (not shown) or the pod (not shown) in the pre-alignment unit 2. Collect image data.

採取された画像データは制御部１０へ送信され、ウェハ１００の異物検査と関連付けて制御部１０に記憶される。ウエハ１００の表面検査実施と同時にウエハ端部の画像を記録できるため、検査装置のスループットを高速化することができる。   The collected image data is transmitted to the control unit 10 and stored in the control unit 10 in association with the foreign matter inspection of the wafer 100. Since the wafer edge image can be recorded simultaneously with the surface inspection of the wafer 100, the throughput of the inspection apparatus can be increased.

記録された端部３の画像データは、ＣＲＴ等の表示装置（表示手段）に１画像ないしは、複数画像を表示させることができる。   The recorded image data of the end 3 can display one image or a plurality of images on a display device (display means) such as a CRT.

本実施例には、表面検査装置１とは別に配設された制御部１０を有する。   In the present embodiment, the controller 10 is provided separately from the surface inspection apparatus 1.

制御部１０は、ＣＣＤカメラ６からの電気信号を取り込み、記憶装置７（記憶手段）へ記録する画像データを送る画像インターフェース基板８と、画像の取り込みタイミングを表面検査装置との通信により制御するＩ／Ｏインターフェース基板９と、ＣＣＤカメラ６が撮像した画像データを各種プログラムで演算処理する演算部１１０を有する。   The control unit 10 captures an electrical signal from the CCD camera 6 and sends image data to be recorded to the storage device 7 (storage means), and I controls image capture timing by communication with the surface inspection device. The / O interface board 9 and an arithmetic unit 110 that arithmetically processes image data captured by the CCD camera 6 using various programs.

制御部１０は、ウエハ１００の表面検査時と略同時に、ウエハ１００外周１週分の端部３の画像データを採取し、ウエハ１００のロットＮｏ．やスロットＮｏ．等などの管理情報に基き、検査したウエハ１００の表面検査結果と関連付けて制御部１０の記憶装置７に記録する。   The control unit 10 collects image data of the end 3 for one week of the outer periphery of the wafer 100 almost simultaneously with the surface inspection of the wafer 100, and the lot number of the wafer 100. And slot no. Is recorded in the storage device 7 of the control unit 10 in association with the surface inspection result of the inspected wafer 100.

なお、撮像する端部３の幅はウェハ１００の最外周から１〜８ｍｍの範囲で制御することができる。撮像幅を小さくするに従い採取するデータ容量が小さくなり、情報処理を高速化することが出来る。   Note that the width of the edge 3 to be imaged can be controlled within a range of 1 to 8 mm from the outermost periphery of the wafer 100. As the imaging width is reduced, the data volume to be collected becomes smaller, and the information processing can be speeded up.

しかし、ウエハ１００の偏心などにより、端部３の異物の検出に、漏れを生じるようになる。逆に撮像幅を大きくした場合には、データ容量の上限から、画素サイズを大きくする必要がある。   However, due to the eccentricity of the wafer 100 or the like, leakage occurs in the detection of the foreign matter at the end 3. Conversely, when the imaging width is increased, it is necessary to increase the pixel size from the upper limit of the data capacity.

その結果、解像度が低下して端部３の異物の検出に、漏れを生じるようになる。ウエハ１００の偏心の影響と解像度の低下を抑制しながら端部３の異物を検出する上で、２〜５ｍｍが好ましく、さらには３〜４ｍｍの幅が望ましい。   As a result, the resolution is lowered and leakage occurs in the detection of the foreign matter at the end 3. In order to detect the foreign matter at the end 3 while suppressing the influence of the eccentricity of the wafer 100 and the decrease in resolution, the width is preferably 2 to 5 mm, and more preferably 3 to 4 mm.

また、撮像する画素サイズは４〜１６μｍ２の範囲で制御することが出来る。画素サイズを小さくするほど微細な異物を検出可能となる。 Further, the pixel size to be imaged can be controlled in the range of 4 to 16 μm 2 . As the pixel size is reduced, fine foreign matter can be detected.

しかし、受光光量の減少により端部３の異物の識別が困難となり、端部３の異物の検出に漏れを生じるようになる。   However, it becomes difficult to identify the foreign matter at the end 3 due to the decrease in the amount of received light, and leakage of detection of the foreign matter at the end 3 occurs.

また、採取するデータ容量の増加により情報処理の速度も低下する。受光光量の減少の影響を抑制しながら微細な端部３の異物を検出する上で、４〜８μｍ２が好ましく、さらには７〜８μｍ２の画素サイズが望ましい。 In addition, the information processing speed decreases due to an increase in the data volume to be collected. In detecting fine end 3 of foreign material while suppressing the influence of the decrease in the amount of received light, preferably 4-8 [mu] m 2, more desirably pixel size 7~8μm 2.

記録された画像データは、上記制御部１０のＣＲＴ（表示手段）の画面上や上記制御部１０とは別の場所に載置された複数のパーソナルコンピュータ１２から見ることができる。   The recorded image data can be viewed from a plurality of personal computers 12 placed on a screen of a CRT (display means) of the control unit 10 or at a place different from the control unit 10.

制御部１０とＬＡＮ１１を経由して接続された複数のパーソナルコンピュータ１２は、ＣＲＴ（表示手段）の画面上に表示したウエハ端部３の画像を、ロット単位の一括表示や工程単位表示などへの情報表示指示手段から任意に選択することにより、リスト形式やサムネイル形式などで複数表示１３をすることができる（複数画像表示手段）。   A plurality of personal computers 12 connected to the control unit 10 via the LAN 11 can convert the image of the wafer edge 3 displayed on the screen of a CRT (display means) into a batch unit display or a process unit display. By selecting arbitrarily from the information display instruction means, a plurality of displays 13 can be made in a list format or thumbnail format (multiple image display means).

複数表示１３の画像は、パーソナルコンピュータ１２のキーボードあるいはマウスなどの操作（入力手段）により、画像の拡大や縮小、表示画像領域の左右上下へのスクロール、指定領域の拡大表示、記憶装置７又は外部メディア（磁気、光磁気、光、半導体などを利用した記憶媒体）への保存、ＬＡＮ１１を介した複数のパーソナルコンピュータ１２へのデータ配信などの画像編集（画像編集手段）や情報操作（情報操作手段）をすることができる。   The image of the plurality of displays 13 can be enlarged or reduced, the display image area can be scrolled left and right and up and down, the designated area can be enlarged, the storage device 7 or the outside by an operation (input means) of the keyboard or mouse of the personal computer 12. Image editing (image editing means) such as storage in a medium (storage medium using magnetism, magneto-optical, light, semiconductor, etc.), data distribution to a plurality of personal computers 12 via the LAN 11, and information operation (information operation means) ).

また、記憶装置７に保存された画像は、ＬＡＮ１１を介して制御部１０に接続することによって、複数のパーソナルコンピュータ１２から見ることができる。   Further, the images stored in the storage device 7 can be viewed from a plurality of personal computers 12 by connecting to the control unit 10 via the LAN 11.

この画像編集や画像操作は、操作者がストレスを感じずに、自在に行うことができる。   This image editing and image manipulation can be performed freely without the operator feeling stress.

なお、スクロール時は、複数表示画像の各ウエハ１００間の位置関係を維持しながら、画像を略同時にスクロールすることができる。   When scrolling, the images can be scrolled substantially simultaneously while maintaining the positional relationship between the wafers 100 of the plurality of display images.

図１に示す複数表示１３は、重なったロット単位分（２５枚分）のウエハ１００の端面端部３を表示した一例である。   The multiple display 13 shown in FIG. 1 is an example in which the end surface edge 3 of the wafer 100 corresponding to the lot unit (25 sheets) overlapped is displayed.

この画像は、ウエハ１００一周分のデータが保存されており、ウエハ１００の端部３状態を全体にわたって容易に観察することができる。   In this image, data for one round of the wafer 100 is stored, and the state of the edge 3 of the wafer 100 can be easily observed over the whole.

また、複数表示１３の下図は、指定領域を拡大表示した画面であり（画面拡大表示手段）、一例として重なった三枚のウエハ１００の端部３を示している。   Further, the lower view of the plural display 13 is a screen in which the designated area is displayed in an enlarged manner (screen enlarged display means), and shows the end portion 3 of the three wafers 100 that are overlapped as an example.

複数表示１３では、各ウエハ１００の端部３の位置情報に基いて、ノッチ位置を基点に、各ウエハ１００間の位置関係が調整されて表示される。   In the plural display 13, the positional relationship between the wafers 100 is adjusted and displayed based on the position information of the end portion 3 of each wafer 100 with the notch position as a base point.

ウエハ１００の表面検査が、所定とは異なる位置に載置されて行われた場合を想定し、任意のウエハ１００ないし全てのウエハ１００を、入力手段を介して指示された指定位置へと移動させて表示させることもできる。   Assuming that the surface inspection of the wafer 100 is carried out at a position different from a predetermined position, an arbitrary wafer 100 or all of the wafers 100 are moved to designated positions designated via the input means. Can also be displayed.

図１の拡大表示図面では、ウエハ１００の端部３に設けたノッチ部を揃えて表示した一例を示している。   In the enlarged display drawing of FIG. 1, an example is shown in which the notch portions provided at the end portion 3 of the wafer 100 are aligned and displayed.

この拡大表示画面は、入力手段を介して演算部１１０へ指示することにより（表示枚数指示手段）、１枚から２５枚までの指定枚数表示を行うことができる（指定枚数表示手段）。   This enlarged display screen can display the designated number of sheets from 1 to 25 (designated number display means) by giving an instruction to the calculation unit 110 via the input means (display number instruction means).

この複数表示１３や拡大表示図面の表示は、プログラム（ソフトウェア）を用いて作られる。ＣＣＤカメラ６が撮った画像データは、ウエハ１００一枚毎の端部３の面画像データである。   The multiple display 13 and the display of the enlarged display drawing are created using a program (software). The image data taken by the CCD camera 6 is surface image data of the end portion 3 for each wafer 100.

この一枚毎の画像データをプログラム（ソフトウェア）に従って演算部１１０（ＣＰＵ）での演算処理を実行し、ノッチ部の位置関係を揃えて重なる積層形式や重畳形式、若しくはサムネイル形式などのウエハ１００の画面が作られる。   The image data for each sheet is subjected to arithmetic processing in the arithmetic unit 110 (CPU) in accordance with a program (software), and the positional relationship of the notch portions is aligned to overlap and form the wafer 100 in a stacked format, a superimposed format, or a thumbnail format. A screen is created.

ウエハ１００の表面検査と端部３検査の二つの検査は、表面検査装置１における一連の処理ステップの中で連続的に行われる（シリアル処理）。   Two inspections, the surface inspection of the wafer 100 and the edge 3 inspection, are continuously performed in a series of processing steps in the surface inspection apparatus 1 (serial processing).

一方の端部３検査はウエハ１００の搬送過程で、プリアライメント処理と略同時に並行処理され、端部３検査による表面検査への処理の律速を抑止する。よって、二つの検査を実行しながらも、多数のウエハ１００をまとめて検査できるので、検査処理を高速の状態で維持し、スループットの低下を抑制することができる。   One end 3 inspection is carried out in parallel with the pre-alignment process during the transfer of the wafer 100, and the rate limiting of the process to the surface inspection by the end 3 inspection is suppressed. Therefore, since a large number of wafers 100 can be inspected together while executing two inspections, the inspection process can be maintained at a high speed, and a decrease in throughput can be suppressed.

また、各ウエハ１００のノッチ部の位置関係を揃えて表示するので、比較検査を容易にできる。この比較検査の機能は、プロセス間の状態の監視漏れを抑制し、ウエハ端部３の異物起因の不良を未然に防ぐことができる。   Further, since the positional relationship of the notch portions of each wafer 100 is displayed in a uniform manner, comparative inspection can be facilitated. The function of this comparative inspection can suppress omission of monitoring of the state between processes, and can prevent a defect due to foreign matter at the wafer edge 3 in advance.

また、図示は省略するが、端部３を斜めから見た状態で、端部３の画像を順次一定の間隔でずらして重ね合せた表示も可能である。種々のプログラムソフトを用意することにより、多様な検査に対応できる。   Although illustration is omitted, it is also possible to display the images of the end portions 3 while sequentially shifting them at a constant interval while viewing the end portions 3 from an oblique direction. By preparing various program software, various inspections can be handled.

図３は、表面検査装置１がＣＲＴ上あるいはプリンタ上に出力するウエハ１００上の検出異物の分布を表す図（以下異物マップ１４と称する）と、ＣＣＤカメラ６で記録した端部画像１４０を重ね合わせた異物マップ１５の一例を示した図である。   FIG. 3 shows a diagram (hereinafter referred to as a foreign matter map 14) showing the distribution of detected foreign matter on the wafer 100 output by the surface inspection apparatus 1 on a CRT or printer, and an end image 140 recorded by the CCD camera 6. It is the figure which showed an example of the match | combined foreign material map.

この表面検査と端部３検査の並示や併せた表示（併置手段）もプログラムソフトにより行われる。   This surface inspection and end 3 inspection are displayed side-by-side and combined display (parallel arrangement means) is also performed by program software.

検査後のレヴューにおいて、ウエハ１００の端部３画像の観察結果を、ウエハ１００上の位置情報と関連付けて、画像を表面検査結果の異物マップ１４に埋め込むことにより、表面検査結果と関連づけてウエハ１００の端部３の状態を管理することができる。   In the review after the inspection, the observation result of the edge 3 image of the wafer 100 is associated with the positional information on the wafer 100, and the image is embedded in the foreign matter map 14 of the surface inspection result, so that the wafer 100 is associated with the surface inspection result. It is possible to manage the state of the end 3 of the.

この表面検査と端部３検査の重ね合わせ機能により、歩留まりに影響するウエハ端部の状態を表面検査結果と関連付けて容易に解析することが可能となり、不良発生時のプロセスへのフィードバックを迅速に行うことができる。   This superposition function of the surface inspection and edge 3 inspection makes it possible to easily analyze the wafer edge state that affects the yield in association with the surface inspection result, and to promptly provide feedback to the process when a defect occurs. It can be carried out.

実施例２について、図４を引用して説明する。   Example 2 will be described with reference to FIG.

図４は、本発明を実現するためのレンズ系とカメラと照明系の構成を示す図である。   FIG. 4 is a diagram showing a configuration of a lens system, a camera, and an illumination system for realizing the present invention.

実施例２の形態は、照明光を発生させる光源４と、照明光をウエハ１００端部３の周辺部に照明する落射照明１６と、ウエハ端部３のエッジ部を照明するリング照明１７と、リング照明１７の照明光を反射、拡散させてエッジ部の照度を上げる反射板１８と、ウエハ１００の端部３画像を拡大するレンズ系５と、撮像した画像を電気信号に変換するＣＣＤカメラ６で構成される。   The embodiment 2 includes a light source 4 that generates illumination light, an epi-illumination 16 that illuminates the peripheral portion of the wafer end portion 3 with illumination light, a ring illumination 17 that illuminates the edge portion of the wafer end portion 3, and A reflector 18 that increases the illuminance at the edge by reflecting and diffusing the illumination light of the ring illumination 17, a lens system 5 that enlarges the edge 3 image of the wafer 100, and a CCD camera 6 that converts the captured image into an electrical signal. Consists of.

実施例１との相違点はウエハ１００の端部３に、エッジ部を照明するリング照明１７の光学系を追加すると共に、落射照明光を集光する反射板１８を配設して、照度を向上し、解像度を改善した点である。   The difference from the first embodiment is that an optical system of a ring illumination 17 that illuminates the edge portion is added to the end portion 3 of the wafer 100, and a reflection plate 18 that condenses the incident illumination light is disposed to reduce the illuminance. It is the point which improved and improved the resolution.

実施例３について、図５を引用して説明する。   Example 3 will be described with reference to FIG.

実施例３の形態は、照明光を発生させる光源４と、照明光をウエハ１００端部３の周辺部に照明する落射照明１６と、ウエハ１００の端部３のエッジ部へラインファイバ１９を介して照明光を照明するシリンドリカルレンズ２０と、ウエハ１００の端部３画像を拡大するレンズ系５と、撮像した画像を電気信号に変換するＣＣＤカメラ６で構成される。   In the third embodiment, the light source 4 that generates the illumination light, the epi-illumination 16 that illuminates the illumination light on the peripheral portion of the end portion 3 of the wafer 100, and the edge portion of the end portion 3 of the wafer 100 via the line fiber 19. The cylindrical lens 20 that illuminates the illumination light, the lens system 5 that enlarges the edge 3 image of the wafer 100, and the CCD camera 6 that converts the captured image into an electrical signal.

実施例１及び実施例２との相違点は、ウエハ１００端部３のエッジ部の照明をラインファイバ１９とシリンドリカルレンズ２０で構成した点にある。   The difference from the first and second embodiments is that the illumination of the edge portion of the end portion 3 of the wafer 100 is constituted by the line fiber 19 and the cylindrical lens 20.

これにより、エッジ部の光学系の照射位置の調整を容易とし、端部３への照射条件を適正な設定にすることができる。   Thereby, adjustment of the irradiation position of the optical system of the edge part can be facilitated, and the irradiation condition to the end part 3 can be set appropriately.

実施例４について、図６を引用して説明する。   Example 4 will be described with reference to FIG.

実施例４の形態は、照明光を発生させる光源４と、照明光をウエハ１００端部３の周辺部に照明する落射照明１６と、ウエハ１００の端部３のエッジ部へラインファイバ１９とシリンドリカルレンズ２０を介して照明光を照明する複数の照明光学系と、ウエハ１００の端部３画像を拡大するレンズ系５と、撮像した画像を電気信号に変換するＣＣＤカメラ６で構成される。   In the fourth embodiment, the light source 4 that generates illumination light, the epi-illumination 16 that illuminates the peripheral portion of the wafer 100 end 3 with the illumination light, and the line fiber 19 and the cylindrical to the edge portion of the end 3 of the wafer 100 are used. A plurality of illumination optical systems that illuminate illumination light through the lens 20, a lens system 5 that enlarges the edge 3 image of the wafer 100, and a CCD camera 6 that converts the captured image into an electrical signal.

実施例１と実施例２及び実施例３との相違点は、ラインファイバ１９の照度を向上するために、エッジ部のカーブに合わせて複数に分けて構成した点である。   The difference between the first embodiment, the second embodiment, and the third embodiment is that in order to improve the illuminance of the line fiber 19, it is divided into a plurality according to the curve of the edge portion.

これにより、エッジ部の光学系の照射位置を分割して調整することが可能となり、端部３への照射条件を最適な設定にすることができる。   Thereby, it becomes possible to divide and adjust the irradiation position of the optical system of the edge portion, and the irradiation condition to the end portion 3 can be set to an optimum setting.

実施例５について、図７を引用して説明する。   Example 5 will be described with reference to FIG.

実施例５の形態は、照明光を発生させる光源４と、照明光をウエハ１００端部３の周辺部に照明する落射照明１６と、ウエハ１００の端部３のエッジ部へ照明光を照明する半円状のラインファイバ１９とシリンドリカルレンズ２０からなる照明光学系と、ウエハ１００の端部３画像を拡大するレンズ系５と、撮像した画像を電気信号に変換するＣＣＤカメラ６で構成される。   In the fifth embodiment, the light source 4 that generates illumination light, the epi-illumination 16 that illuminates the peripheral portion of the wafer 100 end portion 3 with the illumination light, and the edge portion of the end portion 3 of the wafer 100 is illuminated with the illumination light. The illumination optical system includes a semicircular line fiber 19 and a cylindrical lens 20, a lens system 5 for enlarging the edge 3 image of the wafer 100, and a CCD camera 6 for converting the captured image into an electrical signal.

実施例１ないし実施例４との相違点は、ラインファイバ１９の照度を向上するために、エッジ部のカーブに合わせて、ラインファイバ１９とシリンドリカルレンズ２０を半円状にして構成した点である。   The difference from the first to fourth embodiments is that, in order to improve the illuminance of the line fiber 19, the line fiber 19 and the cylindrical lens 20 are formed in a semicircular shape in accordance with the curve of the edge portion. .

連続した照射光をエッジ部のカーブに合わせて照射することにより、照度効率が更に向上し、端部３からの反射散乱光の向上により、解像度を改善することができる。   Irradiation efficiency is further improved by irradiating continuous irradiation light according to the curve of the edge portion, and the resolution can be improved by improving the reflected scattered light from the end portion 3.

以上、半導体デバイスの製造に係わる半導体ウェハの表面検査装置を一例として説明したが、本発明の技術は半導体ウェハに限定されるものではなく、ガラス基板、ＡＬＴＩＣ基板、サファイヤ基板、ディスク基板などにも適用することができる。   The semiconductor wafer surface inspection apparatus related to the manufacture of the semiconductor device has been described above as an example. However, the technology of the present invention is not limited to the semiconductor wafer, and the glass substrate, the ALTIC substrate, the sapphire substrate, the disk substrate, etc. Can be applied.

材質の如何を問わず、平板状の基板であれば適用可能である。   It is applicable to any flat substrate regardless of the material.

また、表面検査装置に限らず、異物検査装置、欠陥検査装置、ディスク検査装置、外観検査装置、マスク検査装置、ベベル検査装置などへも適用することができる。   Further, the present invention can be applied not only to a surface inspection apparatus but also to a foreign substance inspection apparatus, a defect inspection apparatus, a disk inspection apparatus, a visual inspection apparatus, a mask inspection apparatus, a bevel inspection apparatus, and the like.

さらに、半導体デバイス製造工程の他、ハードディスク、液晶表示装置、マスクのセンサーなどの様々な製造工程に適用することができる。   Further, the present invention can be applied to various manufacturing processes such as a hard disk, a liquid crystal display device, and a mask sensor in addition to the semiconductor device manufacturing process.

本発明の実施例１に係わる説明図である。It is explanatory drawing concerning Example 1 of this invention. 本発明の実施例１に係わるブロック図である。It is a block diagram concerning Example 1 of the present invention. 本発明の実施例１に係わるもので、表面検査装置の検査結果マップを示す図である。It is a figure concerning Example 1 of this invention, and is a figure which shows the inspection result map of a surface inspection apparatus. 本発明の実施例２に係わるもので、照明光学系を示す図である。It is a figure concerning Example 2 of this invention, and is a figure which shows an illumination optical system. 本発明の実施例３に係わるもので、照明光学系を示す図である。It is a figure concerning Example 3 of this invention, and is a figure which shows an illumination optical system. 本発明の実施例４に係わるもので、照明光学系を示す図である。It is a figure concerning Example 4 of this invention, and is a figure which shows an illumination optical system. 本発明の実施例５に係わるもので、照明光学系を示す図である。It is a figure concerning Example 5 of this invention, and is a figure which shows an illumination optical system.

符号の説明Explanation of symbols

１…表面検査装置、２…プリアライメント部、３…ウエハ端部、４…光源、５…レンズ系、６…ＣＣＤカメラ、７…記憶装置（記憶手段）、８…画像インターフェース基板、９…Ｉ／Ｏインターフェース基板、１０…制御部、１１…ＬＡＮ、１２…パーソナルコンピュータ、１３…複数表示、１４…異物マップ、１５…融合させた異物マップ、１６…落射照明、１７…リング照明、１８…反射板、１９…ラインファイバ、２０…シリンドリカルレンズ、ウェハ１００。   DESCRIPTION OF SYMBOLS 1 ... Surface inspection apparatus, 2 ... Pre-alignment part, 3 ... Wafer edge part, 4 ... Light source, 5 ... Lens system, 6 ... CCD camera, 7 ... Memory | storage device (memory | storage means), 8 ... Image interface board, 9 ... I / O interface board, 10 ... control unit, 11 ... LAN, 12 ... personal computer, 13 ... multiple display, 14 ... foreign matter map, 15 ... fused foreign matter map, 16 ... epi-illumination, 17 ... ring illumination, 18 ... reflection Plate 19, line fiber 20, cylindrical lens, wafer 100.

Claims (6)

被検査物外周部を検査する表面検査装置において、
前記被検査物外周部の画像を撮るレンズ系およびＣＣＤカメラと、
撮った画像データを記憶する記憶手段と、
前記記憶手段に記憶されている画像データを表示する表示手段とを有することを特徴とする表面検査装置。 In the surface inspection device that inspects the outer periphery of the inspection object,
A lens system and a CCD camera for taking an image of the outer periphery of the inspection object;
Storage means for storing captured image data;
A surface inspection apparatus comprising display means for displaying image data stored in the storage means. 請求項１記載の表面検査装置において、
前記被検査物外周部の表面と端部を照明する照明光学系は、前記端部を照らす反射板を有することを特徴とする表面検査装置。 The surface inspection apparatus according to claim 1,
The illumination optical system that illuminates the surface and end of the outer periphery of the object to be inspected has a reflecting plate that illuminates the end. 請求項１記載の表面検査装置において、
前記被検査物外周部の前記端部を照明する照明光学系は、ラインファイバを含むことを特徴とする表面検査装置。 The surface inspection apparatus according to claim 1,
An illumination optical system that illuminates the end of the outer periphery of the inspection object includes a line fiber. 請求項１記載の表面検査装置において、
被検査物全面に分布する異物検査の画像と、前記被検査物外周部の画像とを組み合わせて表示することを特徴とする表面検査装置。 The surface inspection apparatus according to claim 1,
A surface inspection apparatus that displays a combination of an image of foreign object inspection distributed over the entire surface of an inspection object and an image of the outer periphery of the inspection object. 請求項１記載の表面検査装置において、
前記被検査物外周部の前記端部を撮した個々の被検査物の画像データを記憶手段に記憶し、前記画像データを演算処理して重ねられた前記端面を表示することを特徴とする表面検査装置。 The surface inspection apparatus according to claim 1,
Image data of individual inspection objects obtained by photographing the end portions of the outer peripheral portion of the inspection object are stored in a storage means, and the end surfaces are displayed by performing arithmetic processing on the image data. Inspection device. 請求項５記載の表面検査装置において、
個々の被検査物の前記端部に設けたノッチ部を揃えて表示することを特徴とする表面検査装置。 The surface inspection apparatus according to claim 5,
A surface inspection apparatus characterized by aligning and displaying notch portions provided at the end portions of individual inspection objects.
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