TW201216393A - Detecting method and device of poly-silicon film - Google Patents

Abstract

The invention observes the surface state of poly-silicon film to inspect the image on the poly-silicon film surface and inspect the crystallization state of poly-silicon film. The detection device of poly-silicon film comprises a light illumination method to illuminate light on the substrate with poly-silicon film on the surface; and the photography method of an image that absorbs lights reflected on the substrate with the light illumination method and penetrates poly-silicon film, or absorbs scattered lights of poly-silicon film surrounding the light from poly-silicon film regular reflection; and the image processing method that processes image of scattered light photographed with the photography method to detect the crystallization state of poly-silicon film.

Description

201216393 VI. Description of the Invention: [Technical Field] The present invention relates to a method for detecting a crystalline state of a polycrystalline germanium film formed by crystallizing cerium on a substrate by laser annealing and a prior art liquid crystal display A thin film transistor (TFT: Thin Transistor) used for an element or an organic EL (electroluminescence) device or the like is formed in an amorphous germanium formed on a substrate by a sub-laser in order to ensure high-speed operation. Part of the area that is low-temperature and polycrystallized. Thus, in the case where a part of the amorphous germanium is pre-annealed by excimer laser to be polycrystallized, although it is required to be uniformly multiplied, actually, based on the variation of the laser light source The effect is that there is a case where the crystal is deviated. Therefore, as a state in which the occurrence of the deviation of the ruthenium crystal is monitored, Japanese Patent Laid-Open Publication No. Hei. No. 2 0 0 - 3 0 5 1 4 6 (Patent Document 1) contains a laser beam irradiated onto a semiconductor film. Laser annealing is performed to irradiate the inspection light in the laser irradiation region, and the reflected light from the substrate by the inspection of the irradiation is detected, whereby the intensity of the reflected light changes to confirm the crystallization state of the half film. In Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. , at the same time, the conductor of light, Li Wenchaguang-5-201216393, detects the reflected light or transmitted light, and also irradiates the inspection light in the irradiation of the amorphous sputum-illuminated laser to detect the reflected light or transmitted light, and detects the light from the thunder. The state of the laser annealing is monitored by the elapsed time from the time when the difference between the intensity of the reflected light or the transmitted light in the laser irradiation and the intensity of the reflected light or the transmitted light before the laser irradiation is maximized. Further, Japanese Laid-Open Patent Publication No. 2006-1 9408 (Patent Document 3) discloses a region in which an amorphous germanium formed on a substrate is changed into a polycrystalline germanium by excimer laser annealing. The surface is irradiated with visible light in a direction of 10 to 5 degrees, and the reflected light is detected by a camera grounded in the same angle range, and the change of the reflected light is used to detect the arrangement state of the protrusions on the crystal surface. Further, in JP-A-2001-308009 (Patent Document 4), it is described that a polycrystalline germanium film formed by irradiating an excimer laser with an amorphous ruthenium film irradiates inspection light, and a diffracted photodetector monitors polycrystalline germanium. The diffracted light of the film is characterized by the fact that the intensity of the diffracted light generated from the region of the regular fine fine concavo-convex structure having high crystallinity of the polycrystalline tantalum film is higher than the intensity of the diffraction from the region having low crystallinity and the intensity of the scattered light. The state of the polycrystalline germanium film was examined. It is well known that fine concavities and convexities are generated in a certain period by a surface of a polycrystalline silicon film (poly-silicon film) formed by annealing an amorphous germanium film with a pseudo-molecular laser. In addition, the fine protrusions reflect the crystallinity of the polycrystalline silicon thin film, and the surface of the polycrystalline silicon thin film having a uniform crystal state (the uniform crystal grain size is uniform) has fine regularity and regular formation, and is crystallized. Low state uniformity (polycrystalline grains)

It is also known that fine concavities and convexities are formed irregularly on the surface of the polycrystalline silicon film of S -6 - 201216393. In the method of detecting the state of the crystal, which is reflected in the surface state of the polycrystalline silicon thin film of the reflected light, Patent Document 1 discloses that the semiconductor film is confirmed from the intensity change of the reflected light of the light irradiated in the region irradiated by the laser annealing. In the state of crystallization, the state of crystallization is monitored during the process, and the detection light is a laser for annealing, and is not necessarily detected by scattered light reflecting the crystal state, and the scattered light reflecting the crystal state is detected. In addition, Patent Document 2 compares the reflected light from the laser irradiation region in the laser annealing with the reflected light before annealing to monitor the progress of the annealing, and the process is the same as in Patent Document 1. The person who monitors the state of crystallization is that the detection light is a laser for annealing, and the detection of the scattered light reflecting the crystal state is not described. On the other hand, Patent Document 3 describes that the crystal quality of the polycrystalline silicon is detected by the change in the light reflected by the arrangement of the protrusions on the surface of the polycrystalline silicon film formed by the laser annealing, but the crystal grain size of the polycrystalline germanium film is determined. The amount of light that reflects the 'reflected light (diffracted light) and its distribution change are not taken into account. Further, in Patent Document 4, it is described that the diffracted light generated by the protrusion on the surface of the polycrystalline silicon film formed by the laser annealing is detected, but the polycrystalline germanium film is detected by monitoring the intensity level of the diffracted light detected by the diffracted photodetector. In the state of the film, the state of the protrusion of the surface of the polycrystalline germanium film was examined, and the state of the protrusion of a certain area on the surface of the polycrystalline germanium film was not described. 201216393 SUMMARY OF THE INVENTION The present invention provides a polycrystalline germanium film which is capable of detecting the crystal state of a polycrystalline germanium film by observing the surface state of the polycrystalline germanium film from the image obtained by taking the optical image of the surface of the polycrystalline germanium film. Detection method and device thereof. In order to solve the above-described conventional technical problems, in the present invention, the apparatus for detecting a polycrystalline silicon thin film includes: a light irradiation means for irradiating a substrate on which a polycrystalline germanium film is formed on a surface; and the intake is irradiated by the light irradiation means Among the light of the substrate, the first imaging means for transmitting the light of the polycrystalline silicon film or the image of the scattered light of the polycrystalline silicon film in the vicinity of the light reflected by the polycrystalline thin film; and the polycrystalline silicon film which is irradiated with light by the light irradiation means The second imaging means for generating the image of the primary diffracted light; and the processing of the image of the scattered light captured by the first imaging means and the image of the diffracted light taken by the second imaging means to detect the polycrystalline silicon film It is composed of image processing means of crystal state.

Further, in order to solve the above-mentioned technical problem of the present invention, a method for detecting a polycrystalline germanium film is characterized in that a substrate on which a polycrystalline germanium film is formed is irradiated with light, and is taken from light irradiated onto the substrate. The image of the diffracted light generated from the polycrystalline germanium film by the light of the polycrystalline silicon film or the image of the scattered light of the polycrystalline silicon film in the vicinity of the light which is reflected by the polycrystalline thin film is taken and the light irradiated onto the substrate is taken. The image of the image captured by the scattered light and the image of the image obtained by the diffracted light are processed to detect the crystal state of the polycrystalline silicon film. -8 - 201216393 According to the present invention, the excimer can be detected with relatively high precision. The crystal state of the polycrystalline silicon thin film formed by the shot annealing can maintain the quality of the glass substrate for organic EL or the glass substrate for liquid crystal display. [Embodiment] An example of an apparatus suitable for detecting a polycrystalline germanium film formed on a glass substrate for an organic EL or a glass substrate for liquid crystal display will be described as an embodiment of the present invention. In the entire description of the present embodiment, the same functions are given to the same functions, and the repeated description thereof will be omitted in principle. Hereinafter, embodiments of the present invention will be described in detail based on the drawings. First, the principle of the present invention will be described using Figs. 1 to 6 . In the organic EL or liquid crystal display glass substrate 100 (hereinafter referred to as a substrate) to be detected in the first embodiment, a film 110 of amorphous germanium is formed on the substrate. By scanning a region of one portion of the amorphous germanium film 110 with an excimer laser (not shown), the amorphous germanium film 1 10 that is irradiated with the excimer laser is subjected to The order is heated and melted. After the excimer laser scanning, the film of the melted amorphous germanium is gradually cooled, and the crystal is grown in the state of polycrystalline germanium. In the present invention, it is detected whether or not the polycrystalline silicon is formed into a normal film having a crystal grain size which is uniformly in a desired size. 1 is a substrate 100 in a state in which a portion of the amorphous germanium film 1 10 formed on the glass substrate 100 is subjected to excimer laser annealing, and the crystal grain size is uniform in the state of the polycrystalline germanium film 120. From the light source 150, the illumination light 115 is irradiated from the back side of the substrate 1A at an incident angle of 0,011, and the state of the diffracted light 152 is generated once in the 0 2 direction on the surface side of the substrate 100. The particle diameter of the polycrystalline germanium film 120 formed by this excimer laser annealing is related to the irradiation energy of the excimer laser (the product of the power density of the laser and the irradiation time). If this relationship is qualitatively represented, it is as shown in Figure 2A. That is, when the power of the laser irradiated with the amorphous tantalum film 11 〇 is increased, the crystallization of the amorphous tantalum film 1 1 〇 starts after the energy level is exceeded, and the polysilicon film 126 is grown. Then, when the power of the irradiated laser is further increased, the particle diameter of the polysilicon film 120 is grown to be larger. Here, when the particle diameter of the polycrystalline germanium film 120 is in a state of being uniform, the surface of the polycrystalline germanium film 126 is formed to have a projection at a substantially constant pitch P in accordance with the particle diameter of the crystal (the vertical direction of the drawing of Fig. 1). The direction is also formed with protrusions at a certain pitch). The pitch P of the protrusions on the surface of the film varies depending on the crystal grain size of the polycrystalline silicon film 126. On the other hand, in the configuration shown in Fig. 1, the incident angle 01 of the illumination light of the wavelength λ emitted from the light source 150 with respect to the substrate 100, and the first-order diffracted light generated from the substrate 100 on which the polycrystalline germanium film 120 is formed The angle of incidence 0 2 and the pitch 突起 of the protrusions on the surface of the polysilicon film 120 are established by the relationship represented by sin β 1 + sin 0 2 = λ / Ρ (number 1). At present, if the incident angle 0 1 of the illumination light to the substrate 100 is 75 degrees and the wavelength λ of the illumination light is 4 〇 Onm, the exit angle 0 2 of the primary diffracted light and the pitch P of the protrusion of the surface of the polycrystalline germanium film 120 are set. The relationship shown in Figure 2B is established.

S -10- 201216393 When there is a deviation (distribution) or variation (time change) in the power of the excimer laser when the amorphous tantalum film is 1 〇 annealed, the grain of the polycrystalline tantalum film 120 is shown by the relationship shown in the second figure. The path changes. As a result, the angle of incidence 0 2 of the primary diffracted light generated by the substrate 100 irradiated from the direction of 0 is changed by the relationship shown in Fig. 2 . Therefore, when the angle at which the primary diffracted light of the optical system (not shown in Fig. 1) for detecting the primary diffracted light 152 is detected is fixed, when the particle diameter of the polycrystalline silicon film 126 is changed, the primary diffracted light is changed once. Deviation from the field of view of the inspection optical system may impair the reliability of the detection of the polysilicon film 126. Figure 3 is a diagram showing a substrate 100 that is annealed to change the power of the excimer laser. As shown in Fig. 1, the long illumination light is irradiated in a direction perpendicular to the plane of the paper emitted from the light source 150. An example of the output from each element of a 1-dimensional sensor array when detected in the direction of 0 2 and perpendicular to the plane of the paper, in the direction of the sensor array. Fig. 3(1) shows a substrate 100 which is annealed in a state in which the power of the excimer laser is minimized, and irradiates the long illumination light 1 5 1 in a direction perpendicular to the plane of the paper, and senses it in 1 dimension. An example of the output from each element of a 1-dimensional sensor array when the array is detected. The output of the 1-dimensional sensor array as reflected by the state of annealing in response to the intensity distribution of the quasi-molecular laser can be obtained. In the example of (1) of Fig. 3, the power of the excimer laser at the time of annealing is insufficient, and the luminance exceeding the level of the threshold 301 cannot be detected from the output of the 1-dimensional sensor array. Figure 3 (2) to (5), in the case of (1), sequentially increase the power of the excimer laser to anneal the substrate 100 illuminating the illumination light 1 5 1 -11 - 201216393, from 1 The output of each component of the dimensional sensor array. (5) shows a case where the laser is annealed at a laser power that does not cause damage to the substrate 100. The pattern of the light emitted from the substrate 100 irradiated with the illumination light 151 in the direction of 0 2 changes in response to the change in the excimer laser power at the time of annealing. Fig. 4 is a view showing the P point in the (1) to (5) corresponding to Fig. 3 and its vicinity (in the (1) to (5) of Fig. 3, the solid line on both sides of the P point is sandwiched The average 値 of the output of the 1-dimensional sensor array element in the area of residence is plotted against the excimer laser power during annealing. In the portion where the hatching is applied in Fig. 4, even in the state where the laser power at the time of annealing is below the limit of damage to the substrate 100, the threshold is set below the threshold of the brightness ,, and it is judged as Poor laser annealing. This becomes an error detection. On the other hand, in the illumination light 151 irradiated on the substrate 100, the light that has traveled in the direction of 152 indicated by the dotted line through the substrate 100 is shielded from the straight forward light. When the scattered light around the transmitted light is detected from the direct light of the light source 150, the scattered light passing around the light is less affected by the particle size when the particle size of the polycrystalline silicon film 126 is larger than a certain degree. influences. Fig. 5 is a view showing the output of the 1-dimensional sensor array element from the scattered light passing through the vicinity of the transmitted light of the substrate 100 when the illumination light 1 5 1 is irradiated onto the substrate 100, and the detection is from the third image of the response. The relationship between the average 値 of the output 値 of the component of the scattered light in the region near the pixel P and the excimer laser power at the time of annealing.

S It is seen from the figure that the scattered light -12-201216393 in the vicinity of the transmitted light transmitted through the substrate 100 has a smaller annealing power, and the smaller the annealing power is, the smaller the annealing power is. Fig. 6 is a view showing a result of detecting the result of detecting the primary diffracted light shown in Fig. 4 and detecting the result of the scattered light in the vicinity of the transmitted light shown in Fig. 5, and Fig. 4, applying the hatching In the portion where the laser power during annealing is not below the limit of damage to the substrate 1 ,, the threshold is set to be lower than the threshold set by the brightness 値 level, and it is erroneously determined that the laser annealing is poor. However, in Fig. 6, it is known that the OK range on the high side of the laser power at the time of annealing can be enlarged. That is, the lower limit 雷 of the laser power during annealing is determined by the detection data of the primary diffracted light shown in FIG. 4, and the detection data of the primary diffracted light shown in FIG. 6 and the scattered light in the vicinity of the transmitted light are used. The detection data is added to determine the upper limit of the laser power during annealing, thereby further magnifying the setting range of the laser power during annealing. In the example shown in Fig. 6, the example of detecting the data of the primary diffracted light shown in Fig. 4 and the data of detecting the scattered light in the vicinity of the transmitted light shown in Fig. 5 are simply added. However, it is also possible to add weight to the data of the scattered light in the vicinity of the transmitted light shown in Fig. 5, and to add the data of the primary diffracted light shown in Fig. 4. In this case, by adding the detection data equivalent to the two parties of Fig. 6, the OK range on the high side of the laser power at the time of annealing can be detected in a wider range. The present invention has been completed based on the above principles, and the specific configuration of the detecting device for carrying out the principles of the present invention will be described below. [Embodiment 1] -13-201216393 Fig. 7 shows the detection of polycrystalline silicon which is formed on a portion of the amorphous germanium film on the glass substrate for organic EL or the glass substrate for liquid crystal display of the present invention by laser annealing. The overall configuration of the detecting device 700 for the crystalline state of the film. The detection device 700 includes a substrate loading unit 710, a detection unit 720, a substrate unloading unit 730, a detection unit data processing/control unit 740, and an overall control unit 750. The glass substrate for organic EL to be detected or the glass substrate for liquid crystal display ( The following is referred to as "substrate" 1 〇〇, which is a thin film in which an amorphous germanium is formed on a glass substrate. In the previous project of this test, a portion of the region was irradiated with an excimer laser to be scanned and heated, and overheated. The region is annealed, and the polycrystalline crystal is in a state of being a polycrystalline germanium film. The detecting device 100 takes a surface image of the substrate 100 to check whether the polysilicon film is normally formed. The substrate 100 to be inspected is provided in the loading unit 710 by a transport means (not shown). The substrate 100 provided in the loading unit 710 is transported to the detecting unit 720 by a transport means (not shown) controlled by the entire control unit 750. The detecting unit includes a detecting unit 72 1. The state of the polysilicon film formed on the surface of the substrate 1 is controlled by the detecting unit data processing and control unit 740. The data detected by the detecting unit 72 1 is processed by the detecting unit data processing and control unit 740, and the state of the polysilicon film formed on the surface of the substrate 1 is evaluated. The substrate 100 that has been detected is transported from the detecting unit 72 to the unloading unit 7 3 0 by a transport means (not shown) controlled by the entire control unit 750.

S - 14 - 201216393 ' is taken out from the detecting device 700 by a processing unit not shown. Further, Fig. 7 shows that the detecting unit 720 includes the detecting unit 721 of the i stage, but the size or arrangement ' of the size of the substrate 100 to be detected or the polycrystalline silicon film to be formed may be two or three or more. Fig. 8A shows the configuration of the detecting unit 721 and the detecting unit data processing and control unit 740 in the detecting unit 720. The detecting unit 72 1 is composed of an illumination optical system 800, a scattered light image pickup optical system 820, a primary diffracted optical image pickup optical system 830, and a substrate stage 850, and is connected to the detection unit data processing and control unit 740' The part data processing and control unit 740 is connected to the entire control unit 750 shown in FIG. The illumination optical system 800 includes a light source 801 that emits light of a plurality of wavelengths, a magnifying lens 802 'parallel light pipe lens 803, a wavelength filter 804, a polarizing filter 805, and a cylindrical lens 806, which are housed in the lens barrel. The light source 801 emits light having a wide frequency (for example, 300 nm to 700 nm) from the ultraviolet range to the visible light range. For example, a halogen lamp or a xenon lamp magnifying lens 802 is used to amplify the beam diameter of the light emitted by the light source 801. The collimator lens 8 03 emits light having a beam diameter amplified by the magnifying lens 82 into parallel light. The wavelength filter 804 selects the wavelength of the illumination in accordance with the state of the polysilicon 120 formed on the substrate 100 to be detected, and selects a wavelength suitable for detection from the multi-wavelength light emitted from the light source 801. -15-201216393 The polarizing filter 805 controls the polarization state of the light of the illumination substrate 100, and changes the illumination light in such a manner that the polycrystalline silicon 120 formed on the substrate 100 to be detected can be detected in such a manner that a high contrast image can be detected. The state of polarization. The cylindrical lens 806 is emitted from the light source 801, and the magnifying lens 802 is condensed, and the parallel light pipe lens 803 is used as the light of the parallel light to match the size of the detection area on the substrate 1 to efficiently In the manner of illumination, the illumination beam is concentrated in one direction, and in a direction orthogonal thereto, in a state of parallel light, the cross-sectional shape is formed into a long shape in one direction (the direction of the vertical plane). By irradiating the substrate 100 with the light condensed in one direction by the cylindrical lens 806, the amount of illumination light in the detection area on the substrate 1 is increased, and the scattered light image capturing optical system 820 and the primary diffracted light can be used. The image capture optical system 803 detects higher contrast images. The scattered light image pickup optical system 820 includes a light shielding plate 821, an objective lens 822, a wavelength filter 823, and a polarization filter that are transmitted from the light source 801 and transmitted through the substrate 100 to transmit light (direct light from the light source 801). The 824, the imaging lens 825, and the image sensor 826 are housed in the barrel portion 827. The objective lens 822 condenses the diffracted light (primary diffracted light) emitted from the substrate 100 illuminated by the illumination optical system 800, and has a relatively large NA (the number of lenses) in order to efficiently condense the diffracted light.値Polarity 〇The wavelength filter 823 is formed by light that is collected by the objective lens 822 and is emitted from the substrate 1 to selectively transmit light of a specific wavelength.

S -16- 201216393 The optical characteristics of the polysilicon film on the surface of the substrate 100 can be set to a selected wavelength. Light of a wavelength other than the illumination wavelength of the substrate 1 and the periphery can be removed by the wavelength filter 823. The polarization filter 824 adjusts the state of the polarization of the light of the specific wavelength of the wavelength selection filter 823. The imaging lens 825 is formed by imaging an optical image of the primary diffracted light from the surface of the substrate 100, and is polarized by the polarizing filter 8 24 by the light of the specific wavelength transmitted through the wavelength selective filter 823. An image of the light that has been adjusted. The image sensor 826 photographs an optical image of the primary diffracted light from a pattern in which the surface of the substrate 100 illuminated by the polarization filter 850 is formed into a long region by the imaging lens 82 5 . The first substrate CCD (optical coupling element) image sensor or the two-dimensional CCD image sensor is disposed in a direction in which the substrate 1 is illuminated. The primary diffracted image capturing optical system 830 includes an objective lens 831, a wavelength filter 832, a polarization filter 833, an imaging lens 834, and an image sensor 835, which are housed in the barrel portion 836. The objective lens 83 1 condenses the diffracted light (primary diffracted light) generated from the substrate 100 illuminated by the illumination optical system 800, in order to efficiently condense the diffracted light 'has a relatively large NA (lens) The 〇 wavelength filter 832 is connected to the light from the substrate 1 聚 condensed by the objective lens 831, and selectively transmits light of a specific wavelength, which is formed on the substrate -17-201216393 The optical properties of the polycrystalline silicon film on the surface can be set to a selected wavelength. The polarization filter 833 adjusts the polarization state of the light of the specific wavelength of the wavelength selection filter 832. The imaging lens 834 is formed by imaging an optical image of the primary diffracted light from the surface of the substrate 100, and the polarized light is filtered by the polarizing filter 833 by the light of the specific wavelength transmitted through the wavelength selective filter 832. An image of the adjusted light. The image sensor 83 5 detects an optical image of the primary diffracted light from the surface of the substrate 100 that is imaged by the imaging lens 834, and uses a CCD (optical coupling element) one-dimensional sensor or two-dimensional sensing. The composition of the device. The substrate stage 850 is placed on the substrate 100 on which the detection target is placed, and is movable in the XY plane by the driving means 851. The output from the image sensor 826 of the scattered light image pickup optical system 820 and the image sensor 835 of the primary diffracted optical image pickup optical system 830 are individually input to the detection unit data processing and control unit 740. The detection unit data processing and control unit 740 includes analog image signal conversion by the image sensor 826 of the scattered light image pickup optical system 820 and the image sensor 1 1 65 of the primary optical image capturing optical system 830. A/D conversion units 841 and 843 for digital image signals, image processing units and 844 for processing individual digital image signals, and individual digital image signals for processing image processing, and defect determination unit 845 for determining defects from image characteristics The input/output unit 8 46 ′ of the display screen 8 47 that outputs the information of the defect to be determined, the image processing units 842 and 844, the control defect determination unit 845, and the input

S -18- 201216393 is input to the output unit 846 ′ and the control unit 8 8 8 that controls the light source 800 and the image sensors 8M and 83 5 and the driving means 8 5 of the substrate table 850. Further, the control unit 848 is connected to the entire control unit 750 shown in Fig. 7 . In addition, Fig. 8B shows a configuration in which the illumination optical system 800 is disposed on the surface side of the substrate 100 as a modification. In the case where the illumination optical system 800 and the primary diffracted optical image capturing optical system 830 and the scattered light image capturing optical system 820 do not interfere with each other, as shown in FIG. 8B, the illumination optical system 800 may be disposed on the substrate 100. It is on the same side as the diffracted image capturing optical system 803 and the scattered light image capturing optical system 820. The configuration shown in Fig. 8B differs only in the arrangement of the illumination optical system 800, and a detailed description thereof will be omitted. In the structures shown in FIGS. 8A and 8B, the illumination optical system 800 illuminates the substrate 100 placed on the substrate stage 850 so that the incident angle of the illumination light from the back side of the substrate 1 is β 1 . The photographic optical system 820 captures the image of the scattered light passing through the periphery of the direct light from the light source 801 of the illuminated substrate 1 while the optical image capturing optical system 830 will be illuminated once. The image of the primary diffracted light generated by the substrate 1 is imaged, and the detection portion data processing and control unit 704 processes the individual image data to detect the crystal state of the polysilicon film formed on the substrate 1 . Next, the detection unit 721 and the detection unit data processing/control unit 740 having the structure shown in Fig. 8 are used to detect the state of the polycrystalline ruthenium film annealed by the excimer laser on the substrate 1〇〇. Methods. -19- 201216393 First, the substrate 100 in which a polycrystalline germanium film is formed in advance is used before the detection is performed, and optical conditions are set. The optical conditions to be set are: the illumination wavelength of the wavelength filter 804 by the illumination optical system 800, the polarization condition by the polarization filter 850, and the wavelength selection by the scattered light image pickup optical system 820. The detection wavelength of the filter 823, the polarization condition of the detection light by the polarization filter 824, the imaging position of the scattered light image by the imaging lens 825, and the like. These conditions are obtained by observing the scattered light image obtained by the substrate 100 illuminated by the illumination optical system 800 by the scattered light image pickup optical system 820, and by taking the optical image capturing optical system 83 0 once by the diffracted light. The diffracted light image is displayed on the display screen 847 of the input/output unit 846, and is adjusted in such a manner that a relatively high scattering structure and a primary diffracted image can be obtained. Next, a processing flow for detecting a detection region of a polycrystalline silicon thin film formed by annealing of a quasi-molecular laser on a substrate 100 under the set optical conditions will be described. The detection processing includes a specific area for taking in a substrate, a comprehensive photographing program, and a program for processing an image of a defective portion to detect a defective image. First, the photographing program will be described using FIG. First, the control unit 846 controls the driving unit 851 of the substrate stage 850 so that the detection start position of the detection region of the polysilicon film enters the field of view of the photographic optical system 820, and the substrate 100 is set to the initial position (detection start position) ( S901). Next, the polycrystalline germanium film (S 902) is illuminated by the illumination optical system 800, and the control portion 847 is controlled by the control portion 847 by the photographic region of the photographic optical system 802 moving along the detection region of the illuminated polysilicon film. -20- 201216393 Moving part 851 'The substrate table 850 is moved at a constant speed (S903) ° While the substrate stage 850 is moved at a constant speed, the optical image capturing optical system 8 3 0 is diffracted once. The image of the primary diffracted light generated by the illumination light of the long-area detection area in one direction of the polysilicon film illuminated by the illumination optical system 800 is captured, and the transmitted light is captured by the photographic optical system 820 (the first In the structure of FIG. 8B, the reflected light of the vicinity of the optical axis of the reflected light is scattered (S904). The image sensor 826 from the scattered light image pickup optical system 820 outputs an analog signal, and inputs it to the A/D conversion unit 841 of the detection unit data processing/control unit 740. The image sensor 835 from the primary optical image capturing optical system 83 outputs an analog signal, and inputs it to the A/D conversion unit 843 of the detecting unit data processing and control unit 740. The digital signal converted by the A/D conversion unit 841 is input to the image processing unit 842, and the position information of the substrate stage 850 obtained by the control unit 848 is used to form the digital image signal 'A/D conversion unit 843'. The converted digital signal is input to the image processing unit 844, and the digital image signal is processed by the position information of the substrate stage 850 obtained by the control unit 848 (S905). The above operation is repeatedly performed until the detection area of one line is completed (S906). Next, it is checked whether or not there is a detection area adjacent to the detected one-line area (S907), and the adjacent detection area exists. The substrate stage 850 is moved to the adjacent detection area (S908), and the steps from S904 to S907 are repeated. When the area to be detected is all detected, the movement of the substrate table 850 is stopped (S909), the illumination is turned off (S910), and the photography - 21 - 201216393 program is ended. Next, the detailed procedure of the step (S905) of producing the obtained digital image for processing in the photographing program of Fig. 9 is described in the first drawing, and the scattered light image is used in the photographing step (S904) of the ninth aspect. The intake optical system 820 picks up the scattered light image, and the analog signal output from the image sensor 826 is input to the A/D conversion unit 841 (S1 001) of the detection unit data processing and control unit 740, and the A/D conversion unit is used. The 841 is converted into a digital signal (S10 02 ), and the digital signal of the converted scattered light image is sent to the image processing unit 842 to generate a digital image signal (S10 03 ), and the digital image signal of the generated scattered light image is applied. Pre-processing such as shading correction and averaging processing (S1004), the image feature amount is extracted (S 1005 ) » On the other hand, the primary diffracted light generated from the substrate 1 照明 illuminated by the illumination optical system 800 is detected. The analog signal input from the image sensor 8 3 5 of the first-order diffracted image capturing optical system 803 is input to the A/D conversion unit 843 of the data processing/control unit 740 (S1011), using A/ D turn The change portion 843 is converted into a digital signal (S1012), and the digital signal of the converted diffracted optical image is sent to the image processing unit 844 to generate a digital image signal (S1013), and the digital image of the generated diffracted light image is generated. The signal is subjected to pre-processing such as shading correction and averaging processing (S1014) 'The image feature amount such as the pattern pitch or brightness of the diffracted light image is extracted (S 1 0 1 5 ). The digital image signal of the scattered light extracted by the image feature and the digital image signal of the first diffracted image are integrated into the defect determination unit 845 together with the information of the extracted image feature amount.

S -22- 201216393 S1021 ). In the defect determination unit 845, by comparing the image feature amount of the individual image (for example, the signal obtained by adding the luminance 値 to the one-line scan copy for each pixel) and the preset reference data (threshold), The defect determination process (S 1 022 ) is performed. In this defect determination process, an area determined to be a defect smaller than the threshold can be determined based on the principle explained using FIGS. 4 to 6 because the power of the laser annealing is insufficient, or Caused by excess power. The digital image data determined to be defective is sent to the input/output unit 846, and the image of the scattered light and the position information on the substrate 1 are displayed on the display unit 847 (S1023), and the image processing is ended. The area of the defect determined by the defect determining unit 845 can be displayed differently from the normal area by the image of the scattered light displayed on the display unit 847. Further, when the defect determination criterion is changed from the input/output unit 846, the defect area is changed and displayed in response to the changed defect determination criterion. By detecting in the above configuration, according to the first embodiment, the crystal state of the polycrystalline germanium film formed by annealing by excimer laser can be detected with relatively high precision, and the glass substrate for organic EL can be highly maintained or The quality of the glass substrate for liquid crystal display. In addition, in the first embodiment, the configuration in which the wavelength filter and the polarization filter are separately provided to the illumination optical system 800, the scattered light image pickup optical system 820, and the primary diffraction optical image pickup optical system 830 will be described. However, these are not necessarily all optical systems, and for example, a configuration in which a wavelength filter and a polarization filter are provided only for the illumination optical system 800, or -23-201216393 can be used for the scattered light image pickup optical system 820 and The configuration of the wavelength filter and the polarization filter is set by the primary diffracted image capturing optical system 83 0. Alternatively, only one of the wavelength damper and the polarization filter may be used. Further, the illumination optical system 800 is described by using a cylindrical lens 850 to illuminate a long region in one direction on the substrate 100, and the same effect can be obtained by replacing the lens with a generally circular lens. [Embodiment 2] A second embodiment of the present invention will be described using Figs. 1 1 A and B. The configuration in the second embodiment shown in FIG. 11A differs from the configuration in the first embodiment illustrated in FIG. 8A in that the scattered light image pickup optical system 120 of the detecting unit 1 1 10 is for illumination optics. The illumination light emitted by the system 800 is transmitted obliquely through the optical axis of the transmitted light of the substrate 1. The scattered light image pickup optical system 1120 of the second embodiment includes: an objective lens 1121, a wavelength selection filter 1122, a polarization filter 1123, an imaging lens 1 124, and an image sensor 1 125, which are housed in the lens barrel 1 126, by arranging the scattered light image capturing optical system 1 1 20 obliquely to the transmission optical axis, the direction of the transmitted light transmitted through the substrate iOO is shifted by the optical axis of the scattered light image capturing optical system 1120. On the device 11 25, the image sensor 1125 is an image that can detect scattered light in the vicinity of the transmitted light.

That is, in the scattered light image pickup optical system 112A of the second embodiment, it is not necessary to provide the light-shielding plate 821 corresponding to the optical system 820 of the scattered light image camera of the first embodiment. The light receiving surface of the objective lens 822 can be made larger. As a result, the amount of scattered light detected by the image sensor 1 1 2 5 can be increased, and the sensitivity of the detection can be improved. In the configuration shown in Fig. 11A, the signals output by the scattered light image pickup optical system 1 120 and the primary diffracted light image pickup optical system 83 0 are individually input to the detection data processing/control unit 1 1 40 A/ The D converters 1 1 4 1 and 1143 are converted into digital signals, and are image-processed by the image processing units 1142 and 1144, and sent to the defect determination unit 1 1 45. The image feature amount is determined to be defective, and is determined. The information of the defect is output from the input/output unit 1146. In the configuration other than the 11A, the structure other than the scattered light image pickup optical system 1 120 includes the detection data processing and control unit 丨14〇 and the structure shown in Fig. 8A of the first embodiment, and the detailed description is omitted. . In addition, in the 11A, the scattered light image pickup optical system 1 1 20 is inclined to the lower side of the figure in the direction in which the transmitted light is directed, but the direction in which the transmitted light is directed is on the upper side or the horizontal direction ( The same effect can be obtained by tilting perpendicular to the direction of the paper. Fig. 11B is a view corresponding to the configuration of Fig. 8B of the first embodiment, and is the same as the case of Fig. 1A, except that the scattered light image pickup optical system 1120 is provided obliquely with respect to the direction in which the reflected light is made. The functions of the respective portions in the configuration shown in Fig. 11B are the same as those described in the eighth embodiment of the first embodiment, and the description thereof is omitted. The case of the 1st 1st B is also the same as the case of the 1st 1st A, even if the scattered light image pickup optical system 1 120 is directed toward the upper side or the lateral direction of the reflected light (perpendicular to the direction of the paper - 25-201216393) ) Tilting can also achieve the same effect. According to the embodiments 1 and 2, it is possible to provide an illumination polycrystalline germanium film, take an image of the diffracted light generated by the unevenness on the surface of the film, and evaluate the crystal state of the polycrystalline germanium film by processing the image of the diffracted light taken. Method and apparatus therefor. The invention made by the inventors of the present invention is specifically described above, but the present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the scope of the invention. The above is a description of the invention, but the invention is not limited to the above-described embodiments, and includes various modifications. For example, the above-described embodiments are described in detail in order to facilitate understanding of the present invention, but are not limited to having all of the configurations described. Further, a part of the configuration of an embodiment may be replaced with a configuration of another embodiment, and the configuration of another embodiment may be added to the configuration of another embodiment. Further, addition, deletion, and replacement of other structures may be performed for one of the structures of the respective embodiments. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the principle of the present invention, and showing a cross-sectional view of a substrate in which a relationship between a primary diffracted light and a substrate transmitted light is generated when a substrate on which a polycrystalline germanium film is formed is irradiated with light from the back surface. Fig. 2A is a graph showing the relationship between the laser power and the crystal grain size of polycrystalline germanium when the amorphous tantalum film is annealed by laser. Fig. 2B is a view showing the diffraction angle of the primary diffracted light generated from the raft when the light having a wavelength of 〇.4 y is irradiated onto the substrate on which the polycrystalline ruthenium film is formed.

S -26- 201216393 Graph of crystal grain size of polycrystalline tantalum film. Figure 3 is a diagram showing the use of a 1-dimensional sensor array for detecting the primary diffracted light from the substrate for the substrate from (1) to (5) when the laser power is annealed for the substrate from (1) to (5). The output plot of each pixel of the 1st-dimensional sensor array. Fig. 4 is a graph showing the average enthalpy of the output 値 of the P-point of the curve of (1) to (5) of Fig. 3 and the vicinity of the 1-dimensional sensor array in the vicinity thereof, and the laser power at the time of annealing. Fig. 5 is a view showing each of the substrates (1) to (5) of Fig. 3 for annealing the laser power, and irradiating light from the back surface of the substrate, and detecting the light transmitted through the substrate using a sensor array of a 丨 dimension. A graph of the output 値 of each pixel of the 1-dimensional sensor array in the vicinity of the image of the scattered light. Figure 6 is a graph showing the average 値 of the p point in the curve of Fig. 4 and the output of the pixels in the vicinity thereof and the output of each pixel of the image of the scattered light of Fig. 5, The shot power is a graph depicted on the horizontal axis. Fig. 7 is a view showing the overall configuration of a detecting device for a polycrystalline silicon thin film in an embodiment of the present invention. Fig. 8A is a block diagram showing the outline of the processing unit and the detection data processing and control unit in the third embodiment of the present invention. Fig. 8B is a block diagram showing a schematic configuration of a modification of the detection unit and the detection data processing and control unit in the third embodiment of the present invention. Fig. 9 is a flow chart showing the sequence of photographing in the third embodiment of the present invention. Fig. 1 is a flow chart showing the sequence of the image processing in the first embodiment of the present invention. Fig. 1A is a block diagram showing the schematic configuration of the detection unit and the detection data processing and control unit in the second embodiment of the present invention. Fig. 11B is a block diagram showing a schematic configuration of a modification of the detection unit and the detection data processing and control unit in the second embodiment of the present invention. [Description of main component symbols] 100: Substrate 11 〇: Amorphous germanium film 120: Polycrystalline germanium film 150: Light source 700: Detection device 710: Substrate loading portion 720: Detection portion 73 0 : Substrate unloading portion 740: Detection unit data processing and control unit 750: overall control unit 8: illumination optical system 801: light source 802: magnifying lens 803: collimator lens 804: wavelength filter 805: polarizing filter 806: cylindrical lens

S -28- 201216393 810 : 820 : 821 : 822 : 823 : 824 : 825 : 826 : 827 : 8 3 0 : 8 3 1: 8 3 2 : 8 3 3 : Mirror section scattered light image pickup optical system visor Objective lens wavelength filter polarizing filter imaging lens image sensor barrel portion 1 diffracted light image pickup optical system objective lens wavelength filter polarizing filter -29-

Claims (1)

201216393 VII. Patent application scope: 1. A device for detecting polycrystalline germanium film, characterized in that it has illumination for irradiating light to a substrate on which a polycrystalline germanium film is formed: and ingestion is irradiated to the base by the light irradiation means' a photo-transparent means for transmitting light through the polycrystalline germanium film or the scattered light of the polycrystalline germanium film in the vicinity of the polycrystalline thin film-exposed light; and ingesting the polycrystal generated by the light irradiated by the light irradiation means a second imaging means for sub-circulating the image of the light; and morphing the polycrystalline germanium film by processing the image of the primary diffracted light captured by the second imaging means by the first imaging means The image processing method of the state. 2. The polycrystalline germanium thin film device as described in claim 1, wherein the first first imaging means has light that shields the polysilicon film or that is reflected by the polysilicon film and does not receive the light. An image of the scattered light of the crystal sand film in the vicinity of the light transmitted through the plurality of films or the light reflected by the polycrystalline germanium film. 3. The polycrystalline silicon thin film device according to the first aspect of the invention, wherein the first imaging means transmits light reflected by the plurality of films or reflected by the polycrystalline germanium film without being detected. The light of the polycrystalline germanium film is obliquely disposed in the direction in which the light reflected by the plurality of films is conducted. The photo film of the shooting means is reversed by the first film image and the above-mentioned light-shielding crystal sand is detected. The above-mentioned detection of crystal grains is thin and thin. -30- 201216393 4. If the patent application scope In the apparatus for detecting a polycrystalline silicon film according to the first aspect of the invention, the light irradiation means irradiates the light from a back side of the substrate, and the imaging means picks up the back side of the substrate by the light irradiation means. And an image of scattered light scattered from the surface side of the polycrystalline germanium film. 5. The apparatus for detecting a polycrystalline silicon film according to the first aspect of the invention, wherein the light irradiation means irradiates the light from a surface side of the substrate, and the imaging means is irradiated by the light irradiation means. An image of scattered light scattered from the surface side of the polycrystalline germanium film on the surface side of the substrate. The apparatus for detecting a polycrystalline silicon film according to the first aspect of the invention, wherein the light irradiation means includes a wavelength selection unit that irradiates light having a wavelength selected by the wavelength selection unit to the substrate, the first The photographing means includes a polarizing filter that picks up a light image that is transmitted through the light of the polarizing filter once in the scattered light in the vicinity of the transmitted light or the reflected light from the substrate. 7. A method for detecting a polycrystalline germanium film, comprising: irradiating light onto a substrate on which a polycrystalline germanium film is formed; and extracting light from the light irradiated onto the substrate, passing through the polycrystalline germanium film, or using the polycrystalline germanium film An image of scattered light of the polycrystalline germanium film in the vicinity of the light being reflected; an image of the primary diffracted light generated from the polycrystalline germanium film by light irradiated onto the substrate; and processing of the image of the scattered light And a method for detecting a crystal state of the polycrystalline germanium film by the image of the image of the first-half-31 - 201216393 light, and the method of the polycrystalline germanium film according to the seventh aspect of the patent application, wherein the ingestion is from the permeation The light of the polycrystalline germanium film, the polycrystalline thin film scattered light in the vicinity of the light reflected by the polycrystalline thin film; and the light that is transmitted through the polycrystalline thin film or the light reflected by the polycrystalline thin film, and is not taken up Light blocking the light passing through the polycrystalline sand film or near the light emitted by the polycrystalline sand film Imaging of the scattered light polysilicon film. The method of the polycrystalline germanium film according to claim 7, wherein the polycrystalline germanium film is exposed to light irradiated on the substrate, or the polycrystalline germanium in the vicinity of the polycrystalline germanium film is reflected. An image of the scattered light of the film; and the light transmitted through the polycrystalline germanium film or the light reflected by the polycrystalline germanium film is obliquely observed for the light transmitted through the polycrystalline germanium film or the light reflected by the polycrystalline germanium film photography. The method of the polycrystalline germanium film according to claim 7, wherein the substrate is irradiated with light from the back surface of the substrate, and the image in which the scattered light is captured is irradiated onto the back surface of the front plate. The side is carried out by scattering images scattered on the surface side of the polycrystalline germanium film. The method of the polycrystalline germanium film according to claim 7, wherein the substrate is irradiated with light from the surface of the substrate, and the image of the scattered light is taken up by the surface of the front plate. Scattering detection by the surface side scattering of the polycrystalline germanium film or light transmitted by the front side of the film by the front side of the detection side of the detection side of the detection light of the base light is detected in the base light -32-201216393, The method for detecting a polycrystalline germanium film according to the seventh aspect of the present invention, wherein the light irradiated on the substrate is selected to have a wavelength Light, the image of the scattered light in the vicinity of the transmitted light or the reflected light from the substrate, is the image of the scattered light transmitted through the light of the polarizing filter. -33-