KR102154495B1 - 엑시머 레이저 어닐링 제어를 위한 모니터링 방법 및 장치 - Google Patents

엑시머 레이저 어닐링 제어를 위한 모니터링 방법 및 장치 Download PDF

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KR102154495B1
KR102154495B1 KR1020167026314A KR20167026314A KR102154495B1 KR 102154495 B1 KR102154495 B1 KR 102154495B1 KR 1020167026314 A KR1020167026314 A KR 1020167026314A KR 20167026314 A KR20167026314 A KR 20167026314A KR 102154495 B1 KR102154495 B1 KR 102154495B1
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KR20160127768A (ko
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데르 빌트 폴 반
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코히런트 레이저시스템즈 게엠바하 운트 컴파니 카게
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
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    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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    • G01N21/88—Investigating the presence of flaws or contamination
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    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
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    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
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    • G01N2201/06—Illumination; Optics
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    • G01N2201/06113—Coherent sources; lasers
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    • G01N2201/068—Optics, miscellaneous
    • G—PHYSICS
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    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
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  • Physics & Mathematics (AREA)
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  • Computer Vision & Pattern Recognition (AREA)
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  • Thermal Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Electromagnetism (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020167026314A 2014-03-03 2015-03-02 엑시머 레이저 어닐링 제어를 위한 모니터링 방법 및 장치 Active KR102154495B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/195,656 US9335276B2 (en) 2014-03-03 2014-03-03 Monitoring method and apparatus for control of excimer laser annealing
US14/195,656 2014-03-03
PCT/EP2015/054326 WO2015132210A1 (en) 2014-03-03 2015-03-02 Monitoring method and apparatus for control of excimer laser annealing

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Publication Number Publication Date
KR20160127768A KR20160127768A (ko) 2016-11-04
KR102154495B1 true KR102154495B1 (ko) 2020-09-10

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US (2) US9335276B2 (enExample)
JP (2) JP6738279B2 (enExample)
KR (1) KR102154495B1 (enExample)
CN (1) CN106463367A (enExample)
TW (1) TWI660410B (enExample)
WO (1) WO2015132210A1 (enExample)

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KR20220022016A (ko) * 2020-08-14 2022-02-23 삼성디스플레이 주식회사 디스플레이 장치의 제조 장치 및 디스플레이 장치의 제조 방법
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