JP2005191173A - 表示装置及びその製造方法 - Google Patents
表示装置及びその製造方法 Download PDFInfo
- Publication number
- JP2005191173A JP2005191173A JP2003428928A JP2003428928A JP2005191173A JP 2005191173 A JP2005191173 A JP 2005191173A JP 2003428928 A JP2003428928 A JP 2003428928A JP 2003428928 A JP2003428928 A JP 2003428928A JP 2005191173 A JP2005191173 A JP 2005191173A
- Authority
- JP
- Japan
- Prior art keywords
- energy density
- region
- display device
- substrate
- particle size
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims abstract description 118
- 238000000034 method Methods 0.000 claims abstract description 27
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 25
- 230000001678 irradiating effect Effects 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 143
- 239000002245 particle Substances 0.000 claims description 94
- 239000013078 crystal Substances 0.000 claims description 54
- 238000005259 measurement Methods 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- 239000002243 precursor Substances 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 230000007723 transport mechanism Effects 0.000 claims description 3
- 238000001237 Raman spectrum Methods 0.000 claims description 2
- 238000000149 argon plasma sintering Methods 0.000 claims description 2
- 238000000879 optical micrograph Methods 0.000 claims description 2
- 238000001878 scanning electron micrograph Methods 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 30
- 238000000137 annealing Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000010586 diagram Methods 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000002425 crystallisation Methods 0.000 description 11
- 230000008025 crystallization Effects 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000005224 laser annealing Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000012886 linear function Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005314 correlation function Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Recrystallisation Techniques (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】 基板上に形成した非晶質シリコン膜の平均膜厚を計測(ステップ201)し、この非晶質シリコン膜にレーザ光を照射(ステップ101)し、この照射で結晶化した多結晶シリコン膜の粒径分布を計測(ステップ102)し、多結晶シリコン膜の2つの点A,Bにおける粒径の測定値(ステップ103〜105)から、適正なレーザ光照射エネルギー密度値を算出(ステップ106〜108)し、次の非晶質シリコン膜の平均膜厚を計測(ステップ110,201)し、この平均膜厚と1つ前の非晶質シリコン膜の平均膜厚とから照射するエネルギー密度値を算出(ステップ203,204)し、このエネルギー密度値をレーザ光照射系にフィードバック(ステップ109)する。
【選択図】 図13
Description
また、多結晶シリコン粒径を光回折パターンを計測することによって評価し、レーザアニールプロセスにフィードバックするものが下記特許文献2に記載されている。
X(B1)=γF+δ1
X(B2)=γF+δ2
X(B3)=γF+δ3
X(B4)=γF+δ4
(これらの式を式1とする。)
={Xopt−X(A1)}/α
=[Xopt−min{X(B1),X(B2),X(B3),X(B4)}]/γ
(この式を式2とする。)
である。ただし、minは引数のうちで最小の値を返す関数である。
α・(Fopt−F)=Xopt−X(A1)
γ・(Fopt−F)=Xopt−min{X(B1),X(B2),X(B3),X(B4)}
(この式を式3とする。)
ΔF=[min{X(B1),X(B2),X(B3),X(B4)}−X(A1)]/(α−γ)
(この式を式4とする。)である。
ΔF=k・[min{X(B1),X(B2),X(B3),X(B4)}−X(A1)]
(この式を式5とする。)となる。傾きαは正、γは負であるから、kは正である。
ΔF=k・[X(B)−X(A)]
と表せる。すなわち、フィードバック量は点Aと点Bの粒径の1次関数となる。
(この式を式6とする。)
(この式を式7とする。)
Claims (17)
- 基板上に形成された前駆体膜に光照射し多結晶膜を形成する工程と、前記多結晶膜の面内粒径分布を測定する工程と、前記光照射のエネルギー密度を調整する工程とを備える表示装置の製造方法において、
前記面内粒径分布測定結果から前記エネルギー密度が適正か過不足かを判定し、この判定結果に基づいて前記エネルギー密度を調整することを特徴とする表示装置の製造方法。 - 請求項1に記載の表示装置の製造方法において、前記光はエキシマレーザ、固体レーザ又は他のレーザから生じる光であることを特徴とする表示装置の製造方法。
- 請求項1に記載の表示装置の製造方法において、前記前駆体膜は非晶質シリコン膜又は他の非晶質半導体膜であることを特徴とする表示装置の製造方法。
- 請求項1に記載の表示装置の製造方法において、前記面内粒径分布を測定する工程は、光回折強度、ラマンスペクトル、SEM像、光学顕微鏡像、光反射率、光散乱強度、フォトキャリヤ寿命のうちいずれかを用いて行うことを特徴とする表示装置の製造方法。
- 請求項1に記載の表示装置の製造方法において、前記前駆体膜に光照射し多結晶膜を形成する工程は、基板上で光を走査する工程を含み、前記光照射のエネルギー密度を調整する工程は、前記走査の方向に沿った粒径分布に基づき前記走査の方向に沿ったエネルギー密度の変化量を調整することを特徴とする表示装置の製造方法。
- 請求項1に記載の表示装置の製造方法において、前記光照射のエネルギー密度を調整する工程は、光照射後の表示装置の粒径分布に基づき、その後に光照射する基板のエネルギー密度を調整することを特徴とする表示装置の製造方法。
- 請求項1に記載の表示装置の製造方法において、前駆体膜の膜厚分布を測定する工程を設け、前記膜厚分布に基づいて光照射のエネルギー密度を決定することを特徴とする表示装置の製造方法。
- 請求項7に記載の表示装置の製造方法において、前記前駆体膜はCVD法により作成した非晶質膜であり、前記膜厚分布を測定する工程は、光を照射する基板と同じCVDチャンバで作成した参照用非晶質膜において測定を行うものであることを特徴とする表示装置の製造方法。
- 請求項1に記載の表示装置の製造方法において、前記光照射エネルギー密度を調整する工程は、前記基板面内に領域A及び領域Bを設定し、各領域の粒径からエネルギー密度が適正か過不足かを判定することを特徴とする表示装置の製造方法。
- 請求項9に記載の表示装置の製造方法において、前記領域A及び領域Bの設定については、半導体膜を形成した複数枚の参照用基板に異なるエネルギー密度の光を照射して多結晶化し、多結晶化した参照用基板のうち基板全体の平均粒径が最大となった光照射エネルギー密度を最適エネルギー密度とし、この最適エネルギー密度より低いエネルギー密度において結晶粒径が最も小さくなる領域を領域Aと設定し、前記最適エネルギー密度より高いエネルギー密度において結晶粒径が最も小さくなる領域を領域Bと設定することを特徴とする表示装置の製造方法。
- 請求項9に記載の表示装置の製造方法において、前記光照射エネルギー密度を調整する工程は、前記領域Aと領域Bとの粒径差から光照射エネルギー密度の変化量を求めるものであることを特徴とする表示装置の製造方法。
- 請求項9に記載の表示装置の製造方法において、前記光照射エネルギー密度を調整する工程は、前記領域Aの結晶粒径の下限値P及び領域Bの結晶粒径の下限値Qを設定しておき、領域Aの粒径が下限値Pより小さい場合は領域Aの粒径と下限値Pとの差から光照射エネルギー密度の変化量を求め、領域Bの粒径が下限値Qより小さい場合は領域Bの粒径と下限値Qとの差から光照射エネルギー密度の変化量を求めることを特徴とする表示装置の製造方法。
- 請求項9に記載の表示装置の製造方法において、前記領域A及び領域Bの粒径は、各領域内に1個以上設けた粒径測定点における粒径の最小値又は平均値として求めることを特徴とする表示装置の製造方法。
- 請求項9に記載の表示装置の製造方法において、前記領域Aは基板内の膜厚の厚い領域に、前記領域Bは膜厚の薄い領域に配置し、領域Aの粒径が領域Bの粒径より小さい場合は光照射のエネルギー密度が不足と判定し、領域Aの粒径が領域Bの粒径より大きい場合は光照射のエネルギー密度が過剰と判定することを特徴とする表示装置の製造方法。
- 光源と、この光源からの光を基板上の半導体膜に照射して結晶化するアニーラと、前記半導体膜の結晶粒径面内分布を計測する粒径計測部と、前記アニーラから前記粒径計測部との間で前記基板を受け渡しする搬送機構と、前記光源、アニーラ、粒径計測部及び搬送機構を一定のシーケンスで動作させる制御部とからなる表示装置の製造装置において、
前記粒径計測部で測定した結晶粒径面内分布が規定の条件を満たすよう基板上の光の強度を制御することを特徴とする表示装置の製造装置。 - 基板内の95%以上の領域で結晶粒径が0.4μm以上の薄膜トランジスタで作製された表示装置。
- 基板内の95%以上の領域で電界効果移動度が100cm2/VS以上である薄膜トランジスタで作製されたことを特徴とする表示装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003428928A JP2005191173A (ja) | 2003-12-25 | 2003-12-25 | 表示装置及びその製造方法 |
TW093118683A TWI265552B (en) | 2003-12-25 | 2004-06-25 | Display device and method for manufacturing the same |
US10/891,522 US7232716B2 (en) | 2003-12-25 | 2004-07-15 | Display device and method for manufacturing the same |
KR1020040055966A KR100724648B1 (ko) | 2003-12-25 | 2004-07-19 | 표시 장치의 제조 방법 및 표시 장치의 제조 장치 |
CNB2004100586692A CN100375231C (zh) | 2003-12-25 | 2004-07-27 | 显示装置及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003428928A JP2005191173A (ja) | 2003-12-25 | 2003-12-25 | 表示装置及びその製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009074570A Division JP5034123B2 (ja) | 2009-03-25 | 2009-03-25 | 表示装置及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005191173A true JP2005191173A (ja) | 2005-07-14 |
Family
ID=34697544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003428928A Pending JP2005191173A (ja) | 2003-12-25 | 2003-12-25 | 表示装置及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7232716B2 (ja) |
JP (1) | JP2005191173A (ja) |
KR (1) | KR100724648B1 (ja) |
CN (1) | CN100375231C (ja) |
TW (1) | TWI265552B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015528201A (ja) * | 2012-06-22 | 2015-09-24 | コヒーレント レーザーシステムズ ゲーエムベーハー ウント コンパニー カーゲー | エキシマレーザアニーリングプロセスのための監視する方法および装置 |
US9976969B1 (en) | 2016-10-28 | 2018-05-22 | Coherent Lasersystems Gmbh & Co. Kg | Monitoring method and apparatus for excimer-laser annealing process |
US10121687B2 (en) | 2014-03-03 | 2018-11-06 | Coherent Lasersystems Gmbh & Co. Kg | Monitoring method and apparatus for control of excimer laser annealing |
JP2018185427A (ja) * | 2017-04-26 | 2018-11-22 | 株式会社日本製鋼所 | ディスプレイの製造方法、ディスプレイ及び液晶テレビ |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090087943A1 (en) * | 2007-09-28 | 2009-04-02 | Jian Zhong Yuan | Method for forming large grain polysilicon thin film material |
CN103219230B (zh) * | 2013-04-19 | 2015-09-30 | 京东方科技集团股份有限公司 | 低温多晶硅的制作方法、低温多晶硅薄膜和薄膜晶体管 |
WO2016131022A1 (en) | 2015-02-12 | 2016-08-18 | Glowforge Inc. | Cloud controlled laser fabrication |
US10509390B2 (en) | 2015-02-12 | 2019-12-17 | Glowforge Inc. | Safety and reliability guarantees for laser fabrication |
US9640423B2 (en) * | 2015-07-30 | 2017-05-02 | GlobalFoundries, Inc. | Integrated circuits and methods for their fabrication |
GB201614342D0 (en) * | 2016-08-22 | 2016-10-05 | M-Solv Ltd | An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display |
WO2018098399A1 (en) | 2016-11-25 | 2018-05-31 | Glowforge Inc. | Controlled deceleration of moveable components in a computer numerically controlled machine |
WO2018098398A1 (en) | 2016-11-25 | 2018-05-31 | Glowforge Inc. | Preset optical components in a computer numerically controlled machine |
WO2018098393A1 (en) | 2016-11-25 | 2018-05-31 | Glowforge Inc. | Housing for computer-numerically-controlled machine |
WO2018098396A1 (en) | 2016-11-25 | 2018-05-31 | Glowforge Inc. | Multi-user computer-numerically-controlled machine |
WO2018098397A1 (en) | 2016-11-25 | 2018-05-31 | Glowforge Inc. | Calibration of computer-numerically-controlled machine |
WO2018098394A1 (en) | 2016-11-25 | 2018-05-31 | Glowforge Inc. | Fabrication with image tracing |
CN107275185A (zh) * | 2017-04-24 | 2017-10-20 | 昆山国显光电有限公司 | 激光退火装置及其退火工艺 |
KR102589001B1 (ko) * | 2019-06-07 | 2023-10-16 | 삼성디스플레이 주식회사 | 레이저 결정화 시스템 및 레이저 결정화 방법 |
CN112216603A (zh) * | 2019-07-10 | 2021-01-12 | 创能动力科技有限公司 | 用于晶片的激光处理方法及半导体装置 |
CN111430235B (zh) * | 2020-03-30 | 2023-03-28 | 武汉华星光电半导体显示技术有限公司 | 镭射设备的能量密度的校正方法及镭射系统 |
KR20220022016A (ko) * | 2020-08-14 | 2022-02-23 | 삼성디스플레이 주식회사 | 디스플레이 장치의 제조 장치 및 디스플레이 장치의 제조 방법 |
US11740608B2 (en) | 2020-12-24 | 2023-08-29 | Glowforge, Inc | Computer numerically controlled fabrication using projected information |
US11698622B2 (en) | 2021-03-09 | 2023-07-11 | Glowforge Inc. | Previews for computer numerically controlled fabrication |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5372836A (en) * | 1992-03-27 | 1994-12-13 | Tokyo Electron Limited | Method of forming polycrystalling silicon film in process of manufacturing LCD |
US6059873A (en) * | 1994-05-30 | 2000-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Optical processing method with control of the illumination energy of laser light |
TW303526B (ja) * | 1994-12-27 | 1997-04-21 | Matsushita Electric Ind Co Ltd | |
JPH1065205A (ja) * | 1996-08-21 | 1998-03-06 | Fuji Xerox Co Ltd | 半導体受光素子の製造方法 |
GB9624715D0 (en) * | 1996-11-28 | 1997-01-15 | Philips Electronics Nv | Electronic device manufacture |
JP3342387B2 (ja) * | 1997-02-28 | 2002-11-05 | 三洋電機株式会社 | 半導体膜の評価方法、評価装置及び形成方法 |
JPH10294289A (ja) | 1997-04-16 | 1998-11-04 | Japan Steel Works Ltd:The | レーザアニール装置およびその制御方法 |
KR100278977B1 (ko) | 1997-08-30 | 2001-02-01 | 구본준 | 레이저 장비 |
TW495631B (en) * | 1998-02-06 | 2002-07-21 | Toshiba Corp | Method and system for inspecting polycrystalline semiconductor film |
JP4116141B2 (ja) * | 1998-03-26 | 2008-07-09 | 東芝松下ディスプレイテクノロジー株式会社 | 結晶シリコン膜の製造方法 |
JP2002176180A (ja) * | 2000-12-06 | 2002-06-21 | Hitachi Ltd | 薄膜半導体素子及びその製造方法 |
JP4715016B2 (ja) * | 2001-02-15 | 2011-07-06 | ソニー株式会社 | ポリシリコン膜の評価方法 |
KR20020092231A (ko) * | 2001-06-01 | 2002-12-11 | 가부시끼가이샤 도시바 | 막질 검사 방법과 막질 검사 장치 |
JP4784955B2 (ja) * | 2001-07-18 | 2011-10-05 | 株式会社 液晶先端技術開発センター | 薄膜半導体装置の製造方法 |
JP5091378B2 (ja) * | 2001-08-17 | 2012-12-05 | 株式会社ジャパンディスプレイセントラル | レーザアニール方法及びレーザアニール条件決定装置 |
JP4135347B2 (ja) * | 2001-10-02 | 2008-08-20 | 株式会社日立製作所 | ポリシリコン膜生成方法 |
JP2003203863A (ja) | 2002-01-09 | 2003-07-18 | Toshiba Corp | 半導体薄膜の形成方法及びその装置 |
TW200414280A (en) * | 2002-09-25 | 2004-08-01 | Adv Lcd Tech Dev Ct Co Ltd | Semiconductor device, annealing method, annealing apparatus and display apparatus |
TWI229387B (en) * | 2004-03-11 | 2005-03-11 | Au Optronics Corp | Laser annealing apparatus and laser annealing process |
-
2003
- 2003-12-25 JP JP2003428928A patent/JP2005191173A/ja active Pending
-
2004
- 2004-06-25 TW TW093118683A patent/TWI265552B/zh not_active IP Right Cessation
- 2004-07-15 US US10/891,522 patent/US7232716B2/en active Active
- 2004-07-19 KR KR1020040055966A patent/KR100724648B1/ko not_active IP Right Cessation
- 2004-07-27 CN CNB2004100586692A patent/CN100375231C/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015528201A (ja) * | 2012-06-22 | 2015-09-24 | コヒーレント レーザーシステムズ ゲーエムベーハー ウント コンパニー カーゲー | エキシマレーザアニーリングプロセスのための監視する方法および装置 |
US10121687B2 (en) | 2014-03-03 | 2018-11-06 | Coherent Lasersystems Gmbh & Co. Kg | Monitoring method and apparatus for control of excimer laser annealing |
US9976969B1 (en) | 2016-10-28 | 2018-05-22 | Coherent Lasersystems Gmbh & Co. Kg | Monitoring method and apparatus for excimer-laser annealing process |
JP2018185427A (ja) * | 2017-04-26 | 2018-11-22 | 株式会社日本製鋼所 | ディスプレイの製造方法、ディスプレイ及び液晶テレビ |
Also Published As
Publication number | Publication date |
---|---|
CN100375231C (zh) | 2008-03-12 |
CN1638017A (zh) | 2005-07-13 |
KR100724648B1 (ko) | 2007-06-04 |
US20050142701A1 (en) | 2005-06-30 |
KR20050065261A (ko) | 2005-06-29 |
TWI265552B (en) | 2006-11-01 |
TW200522133A (en) | 2005-07-01 |
US7232716B2 (en) | 2007-06-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2005191173A (ja) | 表示装置及びその製造方法 | |
KR100833761B1 (ko) | 다결정 실리콘 막 생산 공정 | |
US20110309370A1 (en) | Systems and methods for the crystallization of thin films | |
US20030017658A1 (en) | Non-single crystal film, substrate with non-single crystal film, method and apparatus for producing the same, method and apparatus for inspecting the same, thin film trasistor, thin film transistor array and image display using it | |
US20050202611A1 (en) | Method of laser irradiation | |
US7723135B2 (en) | Manufacturing method of display device | |
US9099386B2 (en) | Laser annealing method, laser annealing apparatus, and method for manufacturing thin film transistor | |
JP2603418B2 (ja) | 多結晶半導体薄膜の製造方法 | |
JP5034123B2 (ja) | 表示装置及びその製造方法 | |
JP2002009012A (ja) | 液晶表示装置の製造方法およびレーザアニール装置 | |
TW202302256A (zh) | 雷射照射裝置、雷射照射方法和可讀取地記錄有程式的記錄介質 | |
JP3547979B2 (ja) | 半導体膜の形成装置及び形成方法 | |
US9012309B2 (en) | Collections of laterally crystallized semiconductor islands for use in thin film transistors | |
KR102648920B1 (ko) | 레이저 결정화 장치의 모니터링 시스템 및 이를 이용한 레이저 결정화 방법 | |
JP2006196534A (ja) | 半導体薄膜の製造方法および半導体薄膜の製造装置 | |
JP3471485B2 (ja) | 光処理装置および光処理方法 | |
KR101411188B1 (ko) | 레이저 어닐 방법 | |
JP2005011840A (ja) | レーザアニール装置およびレーザアニール方法 | |
JP2005064134A (ja) | 薄膜半導体及びその形成方法 | |
KR20000028860A (ko) | 다결정실리콘의 제조방법 | |
JP2007208044A (ja) | 半導体薄膜の製造方法および半導体薄膜の製造装置 | |
JP2003045799A (ja) | レーザアニール装置および薄膜トランジスタの製造方法 | |
WO2012081474A1 (ja) | 結晶性半導体膜の形成方法 | |
JP2006032835A (ja) | 結晶化状態測定方法および結晶化状態測定装置 | |
JP2007134637A (ja) | 半導体薄膜の製造装置及び半導体薄膜の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050926 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080606 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080701 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080827 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081014 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081121 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090224 |