CN103219230B - 低温多晶硅的制作方法、低温多晶硅薄膜和薄膜晶体管 - Google Patents

低温多晶硅的制作方法、低温多晶硅薄膜和薄膜晶体管 Download PDF

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CN103219230B
CN103219230B CN201310139120.5A CN201310139120A CN103219230B CN 103219230 B CN103219230 B CN 103219230B CN 201310139120 A CN201310139120 A CN 201310139120A CN 103219230 B CN103219230 B CN 103219230B
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amorphous silicon
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田雪雁
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BOE Technology Group Co Ltd
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Abstract

本发明涉及显示面板制造领域，公开了一种低温多晶硅的制作方法，其包括：在衬底基板上沉积缓冲层；在所述缓冲层上沉积非晶硅层，在形成非晶硅层后进行高温处理；根据所述非晶硅层的厚度分布情况分为多个能量区进行激光退火处理，形成多晶硅层。本发明还公开了基于上述低温多晶硅的制作方法所制备的低温多晶硅薄膜以及具有该薄膜的薄膜晶体管。本发明将非晶硅层分成多个能量区进行激光退火处理，使得每个能量区域内的多晶硅都能得到大尺寸的晶粒尺寸，并且整个基板范围内的多晶硅晶粒尺寸的分布均匀。

Description

低温多晶硅的制作方法、低温多晶硅薄膜和薄膜晶体管
技术领域
本发明涉及显示面板制造领域，特别是涉及一种低温多晶硅的制作方法、基于该方法的低温多晶硅薄膜以及具有该低温多晶硅薄膜的薄膜晶体管。
背景技术
有源矩阵有机发光二极体面板（AMOLED）凭据高画质、移动图像响应时间短、低功耗、宽视角及超轻超薄等优点，成为了未来显示技术的最好选择。目前AMOLED的背板技术中，制作多晶硅层的技术，包括准分子激光退火（ELA），固相晶化（SPC），金属诱导晶化（MIC）等多种制作方法。目前，唯一能实现背板中晶体管有源层量产化的方法是采用准分子激光退火（ELA）工艺。
准分子激光退火（ELA）工艺是一种相对比较复杂的退火过程。在多晶硅薄膜中，晶粒尺寸及晶粒均匀性的控制一直是该技术领域研究的热点。因为低温多晶硅薄膜晶体管的沟道区所覆盖的多晶硅晶粒数量及分布情况（均匀性问题），将直接影响到低温多晶硅薄膜晶体管的电学性能（迁移率大小，迁移率及阈值电压的均匀性等）。
而非晶硅薄膜的厚度分布其实是不均匀的，非晶硅薄膜通常为中间薄边缘厚或者为中间厚边缘薄的情况，即使均匀性比较好的非晶硅薄膜，也会存在薄膜厚度的分布情况。
因此，如何控制非晶硅转变为理想的多晶硅，即多晶硅薄膜晶粒尺寸较大，并且分布均匀，一直是难以攻克的技术难题。
发明内容
（一）要解决的技术问题
本发明要解决的技术问题是如何在低温多晶硅的制作过程中得到大尺寸和分布均匀的多晶硅晶粒。
（二）技术方案
为了解决上述技术问题，本发明提供的一种低温多晶硅的制作方法，其包括以下步骤：在衬底基板上沉积缓冲层；在所述缓冲层上沉积非晶硅层，在形成非晶硅层后进行高温处理；根据所述非晶硅层的厚度分布情况分为多个能量区进行激光退火处理，形成多晶硅层。
进一步地，根据所述非晶硅层的厚度分布情况分成至少一个膜层厚区和至少一个膜层薄区进行激光退火处理；其中，进行激光退火处理时，所述膜层厚区采用的激光能量密度大于所述膜层薄区采用的激光能量密度。
进一步地，将所述非晶硅层分成三个能量区，较薄的中间区域为第二能量区，较厚的两边分别为第一能量区和第三能量区；在第一能量区的激光退火条件为：激光脉冲频率为200～400Hz，重叠率为92%～98%，激光能量密度为240～250mJ/cm2；在第二能量区的激光退火条件为：激光脉冲频率为200～400Hz，重叠率为92%～98%，激光能量密度为230～240mJ/cm2；在第三能量区的激光退火条件为：激光脉冲频率为200～400Hz，重叠率为92%～98%，激光能量密度为240～250mJ/cm2。
进一步地，将所述非晶硅层分成三个能量区，较厚的中间区域为第二能量区，较薄的两边分别为第一能量区和第三能量区；在第一能量区的激光退火条件为：激光脉冲频率为200～400Hz，重叠率为92%～98%，激光能量密度为220～250mJ/cm2；在第二能量区的激光退火条件为：激光脉冲频率为200～400Hz，重叠率为92%～98%，激光能量密度为260～280mJ/cm2；在第三能量区的激光退火条件为：激光脉冲频率为200～400Hz，重叠率为92%～98%，激光能量密度为250～270mJ/cm2。
进一步地，所述缓冲层包括在所述衬底基板上依次沉积的50～150nm厚的氧化硅薄膜层和之后沉积的100～350nm厚的二氧化硅薄膜层。
进一步地，所述缓冲层上沉积30～50nm非晶硅层。
进一步地，在所述缓冲层上沉积非晶硅层后在400～500℃的温度下，对所述非晶硅层进行0.5～3小时的高温处理。
进一步地，对所述非晶硅层采用准分子激光器进行激光退火处理。
进一步地，所述准分子激光器为氯化氙或氟化氪或氟化氩准分子激光器。
本发明还提供一种基于上述的方法制备的低温多晶硅薄膜，其包括在所述衬底基板的同一侧依次形成缓冲层和多晶硅层。
本发明还提供一种薄膜晶体管，其包括上述的低温多晶硅薄膜。
（三）有益效果
上述技术方案所提供的一种低温多晶硅的制作方法，将非晶硅层分成多个能量区进行激光退火处理，使得每个能量区域内的多晶硅都能得到大尺寸的晶粒尺寸，并且整个基板范围内的多晶硅晶粒尺寸的分布均匀。基于该方法的低温多晶硅薄膜以及薄膜晶体管，其多晶硅为均匀的大晶粒。
附图说明
图1是本发明低温多晶硅制作工艺原理图；
图2是本发明中衬底基板的结构示意图；
图3是本发明实施例一的非晶硅层厚度分布图；
图4是实施例一的方法与现有方法所制备的多晶硅晶粒分布对比图；
图5是本发明实施例二的非晶硅层厚度分布图；
图6是实施例二的方法与现有方法所制备的多晶硅晶粒分布对比图。
其中，10、衬底基板；11、液晶面板；20、缓冲层；21、SiNx薄膜层；22、SiO2薄膜层；30、非晶硅层。
具体实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。
如图1所示，本发明的一种低温多晶硅的制作方法，其包括：在衬底基板上沉积缓冲层20；在缓冲层20上沉积非晶硅层30，在形成非晶硅层后进行高温处理；根据非晶硅层30的厚度分布情况分为多个能量区进行激光退火处理，对不同的能量进行不同的激光退火处理，把非晶硅层转变成多晶硅层。当衬底基板10的洁净度不满足要求时，首先对衬底基板10进行预清洗。
缓冲层20的作用是：防止衬底基板10中的金属离子扩散至LTPS有源区，降低缺陷中心和减少漏电流的产生；合适的缓冲层可以改善多晶硅背面界面的质量，防止在多晶硅背面界面处产生漏电流；适当的缓冲层厚度降低了热传导，减缓被激光加热的硅的冷却速率，有助于形成较大的结晶晶粒；
高温处理的目的是为了使非晶硅层30脱氢，防止在步骤S4中激光退火时发生氢爆。
优选地，采用等离子体增强化学气相沉积法在衬底基板上沉积缓冲层。
缓冲层20包括在衬底基板上依次形成50～150nm厚的氮化硅（SiNx）薄膜层21和100～350nm厚的二氧化硅（SiO2）薄膜层22双层缓冲层。设置该双层缓冲层的作用是：氧化硅较氮化硅更容易形成晶相较好的多晶硅，氮化硅对阻挡来自衬底基板的污染物效果更佳，所以选择缓冲层的上层（与非晶硅层接触的表面）为氧化硅，下层（与衬底基板接触的表面）为氮化硅。需要指出的是：缓冲层20还可以为单层SiO2薄膜层，但是效果不如双层缓冲层效果好。
在缓冲层20上采用沉积的方法形成30～50nm非晶硅层30。在完成缓冲层上沉积非晶硅层的步骤后，在400～500℃的温度下，对非晶硅层进行0.5～3小时的高温处理。
最后，对非晶硅层采用准分子激光器进行激光退火处理，优选采用氯化氙（XeCl）、氟化氪、氟化氩等准分子激光器进行激光处理。
根据非晶硅层30的厚度分布情况分成至少一个膜层厚区和至少一个膜层薄区进行激光退火处理，膜层厚区指此区域的非晶硅层的厚度相对较厚，膜层薄区指此区域的非晶硅层的厚度相对较薄，一般根据整个非晶硅层的厚度分布情况进行划分。
其中，在进行激光退火处理时，所述膜层厚区采用的激光能量密度大于所述膜层薄区采用的激光能量密度。
本发明的低温多晶硅的制作方法，考虑了不同厚度的非晶硅对激光能量吸收的不一致性，对将非晶硅层划分为多个能量区进行不同的激光退火处理，可针对每个能量区选择合适的激光退火处理工艺条件，可以在整个基板范围内，得到大尺寸且分布均匀的多晶硅薄膜。
如图2所示，本发明所采用的衬底基板10，在整个衬底基板10上排布满了液晶面板11，考虑到非晶硅薄膜的厚度分布其实是不均的，根据衬底基板厚度分布的一般规律，本发明的方式列举两个优选的实施例进行说明：
实施例一
本实施例是在上述的技术方案的基础上实施的，当非晶硅层的厚度分布情况为“中间薄、两边厚”时，如图3所示，将非晶硅层分成三个能量区，较薄的中间区域为第二能量区B1，较厚的两边分别为第一能量区A1和第三能量区C1，该激光退火处理的方法包括：
在第一能量区A1的激光退火条件为：激光脉冲频率为200～400Hz，优先采用300Hz，激光重叠率为92%～98%，激光能量密度为240～250mJ/cm2；
在第二能量区B1的激光退火条件为：激光脉冲频率为200～400Hz，优先采用300Hz，激光重叠率为92%～98%，激光能量密度为230～240mJ/cm2；
在第三能量区C1的激光退火条件为：激光脉冲频率为200～400Hz，优先采用300Hz，激光重叠率为92%～98%，激光能量密度为240～250mJ/cm2。
如图4所示，本实施例的低温多晶硅制作方法所制备的多晶硅晶粒尺寸分布F1与现有的普通没有分多个区域进行制备的方法所制备多晶硅晶粒尺寸分布E1对比，本实施例的方法所制备的多晶硅晶粒晶粒基本上为大小均匀的大晶粒，而普通的方法所制备的晶粒尺寸大小不一，中间部位的晶粒较大，而两侧的晶粒较小。
实施例二
本实施例与实施例一的区别仅在于，非晶硅层的三个能量区的分布情况不同，为“中间厚、两边薄”，如图5所示，较薄的中间区域为第二能量区B2，较厚的两边分别为第一能量区A2和第三能量区C2，该激光退火处理的方法包括：
因此，非晶硅层的激光退火方法包括：
在第一能量区A2的激光退火条件为：激光脉冲频率为200～400Hz，优先采用300Hz，激光重叠率为92%～98%，激光能量密度为220～250mJ/cm2；
在第二能量区B2的激光退火条件为：激光脉冲频率为200～400Hz，优先采用300Hz，激光重叠率为92%～98%，激光能量密度为260～280mJ/cm2；
在第三能量区C2的激光退火条件为：激光脉冲频率为200～400Hz，优先采用300Hz，激光重叠率为92%～98%，激光能量密度为250～270mJ/cm2。
如图6所示，本实施例的低温多晶硅制作方法所制备的多晶硅晶粒尺寸分布F2与现有的普通没有分多个区域进行制备的方法所制备多晶硅晶粒尺寸分布E2对比，本实施例的方法所制备的多晶硅晶粒晶粒基本上为大小均匀的大晶粒，而普通的方法所制备的晶粒尺寸大小不一，中间部位的晶粒较大，而两侧的晶粒较小。
本发明还提供一种基于上述的低温多晶硅制作方法所制备的低温多晶硅薄膜，其包括在衬底基板10的同一侧依次形成缓冲层20和非晶硅层30。
本发明还提供一种薄膜晶体管，其包括上述的低温多晶硅薄膜。
本发明的低温多晶硅的制作方法，将非晶硅层分成多个能量区进行退火处理，使得每个能量区域内的多晶硅都能得到大尺寸的晶粒尺寸，并且整个基板范围内的多晶硅晶粒尺寸的分布均匀。基于该方法的低温多晶硅薄膜以及薄膜晶体管，其多晶硅为均匀的大晶粒。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和替换，这些改进和替换也应视为本发明的保护范围。

Claims (8)

1.一种低温多晶硅的制作方法，其特征在于，包括以下步骤：
在衬底基板上沉积缓冲层；
在所述缓冲层上沉积非晶硅层，在形成非晶硅层后，在400～500℃的温度下对所述非晶硅层进行高温处理；
根据所述非晶硅层的厚度分布情况分为多个能量区进行激光退火处理，形成多晶硅层，
根据所述非晶硅层的厚度分布情况分成至少一个膜层厚区和至少一个膜层薄区进行激光退火处理；其中，进行激光退火处理时，所述膜层厚区采用的激光能量密度大于所述膜层薄区采用的激光能量密度，
将所述非晶硅层分成三个能量区，所述至少一个膜层薄区包括较薄的中间区域，所述较薄的中间区域为第二能量区，所述至少一个膜层厚区包括较厚的两边，所述较厚的两边分别为第一能量区和第三能量区；
在第一能量区的激光退火条件为：激光脉冲频率为200～400Hz，重叠率为92％～98％，激光能量密度为240～250mJ/cm2；
在第二能量区的激光退火条件为：激光脉冲频率为200～400Hz，重叠率为92％～98％，激光能量密度为230～240mJ/cm2；
在第三能量区的激光退火条件为：激光脉冲频率为200～400Hz，重叠率为92％～98％，激光能量密度为240～250mJ/cm2。
2.如权利要求1所述的低温多晶硅的制作方法，其特征在于，所述缓冲层包括在所述衬底基板上依次沉积的50～150nm厚的氮化硅薄膜层和之后沉积的100～350nm厚的二氧化硅薄膜层。
3.如权利要求1所述的低温多晶硅的制作方法，其特征在于，所述缓冲层上沉积30～50nm非晶硅层。
4.如权利要求1所述的低温多晶硅的制作方法，其特征在于，在所述缓冲层上沉积非晶硅层后在400～500℃的温度下，对所述非晶硅层进行0.5～3小时的高温处理。
5.如权利要求1所述的低温多晶硅的制作方法，其特征在于，对所述非晶硅层采用准分子激光器进行激光退火处理。
6.如权利要求5所述的低温多晶硅的制作方法，其特征在于，所述准分子激光器为氯化氙或氟化氪或氟化氩准分子激光器。
7.一种基于所述权利要求1-6任一项所述的方法制备的低温多晶硅薄膜，其特征在于，包括在所述衬底基板的同一侧依次形成缓冲层和多晶硅层。
8.一种薄膜晶体管，其特征在于，包括如权利要求7所述的低温多晶硅薄膜。
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