CN108346562A - 低温多晶硅、薄膜晶体管及阵列基板的制作方法 - Google Patents

低温多晶硅、薄膜晶体管及阵列基板的制作方法 Download PDF

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CN108346562A
CN108346562A CN201810202160.2A CN201810202160A CN108346562A CN 108346562 A CN108346562 A CN 108346562A CN 201810202160 A CN201810202160 A CN 201810202160A CN 108346562 A CN108346562 A CN 108346562A
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production method
polycrystalline silicon
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temperature polycrystalline
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徐向阳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US16/088,673 priority patent/US10699905B2/en
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Abstract

本发明涉及一种低温多晶硅、薄膜晶体管及阵列基板的制作方法。该低温多晶硅制作方法包括：提供基板，在所述基板上形成缓冲层；在所述缓冲层上形成非晶硅层；在半透膜掩模板的遮挡下对所述非晶硅层进行准分子激光退火处理，使所述非晶硅层转变为多晶硅层；所述半透膜掩模板包括透光的衬底和设于所述衬底表面的图案化的半透膜。本发明还提供了相应的低温多晶硅薄膜晶体管及阵列基板的制作方法。本发明的低温多晶硅、薄膜晶体管及阵列基板的制作方法可以使得多晶硅结晶效果更好，改善多晶硅薄膜晶体管的电性能，同时又能提升多晶硅层的干法刻蚀效率，释放生产制造多晶硅的产能。

Description

低温多晶硅、薄膜晶体管及阵列基板的制作方法
技术领域
本发明涉及显示技术领域，尤其涉及一种低温多晶硅、薄膜晶体管及阵列基板的制作方法。
背景技术
薄膜晶体管(Thin Film Transistor，TFT)是目前液晶显示装置(Liquid CrystalDisplay，LCD)和有源矩阵驱动式有机电致发光显示装置(Active Matrix Organic Light-Emitting Diode，AMOLED)中的主要驱动元件，直接关系平板显示装置的显示性能。薄膜晶体管具有多种结构，制备相应结构的薄膜晶体管的材料也具有多种，根据有源层的材料不同，可以将薄膜晶体管分为非晶硅薄膜晶体管、多晶硅薄膜晶体管等类型。
多晶硅薄膜晶体管与非晶硅薄膜晶体管相比，具有更高的电子迁移率、更快的反应时间和更高的分辨率，目前已广泛应用于显示装置，作为驱动电路部分的开关元件。多晶硅薄膜晶体管的制作方法一般采用制作低温多晶硅(LTPS)的方法，其中通常采用化学气相沉积(CVD)形成非晶硅层，再对该非晶硅层进行结晶化处理。目前一般采用准分子激光退火(ELA)技术进行结晶化，非晶硅层被308纳米激光照射后熔化形成非晶硅液体，非晶硅液体冷却时，非晶硅液体依附晶核逐渐结晶生长而形成多晶硅层。目前的准分子激光退火主要还是整面性进行激光照射结晶，这种结晶最大的缺陷就是均一性较差，较难应用于大尺寸面板。
现有的低温多晶硅制作过程如图1所示，首先采用化学气相沉积法在玻璃基板10上形成缓冲层20，缓冲层20可以为厚度1000埃～2000埃的SiNx/SiO2双层结构或SiNx/SiNO/SiO2三层结构，然后采用化学气相沉积法在缓冲层20上形成厚度300埃～800埃的非晶硅层30，最后在室温和大气压下采用准分子激光退火设备也就是激光器40对非晶硅层30进行激光退火结晶化处理，形成多晶硅层。
发明内容
因此，本发明的目的在于提供一种低温多晶硅制作方法，提升多晶硅结晶效果。
本发明的另一目的在于提供一种低温多晶硅薄膜晶体管制作方法，提升多晶硅结晶效果。
本发明的再一目的在于提供一种低温多晶硅薄膜晶体管阵列基板制作方法，提升多晶硅结晶效果。
为实现上述目的，本发明提供了一种低温多晶硅制作方法，包括：
提供基板，在所述基板上形成缓冲层；
在所述缓冲层上形成非晶硅层；
在半透膜掩模板的遮挡下对所述非晶硅层进行准分子激光退火处理，使所述非晶硅层转变为多晶硅层；
所述半透膜掩模板包括透光的衬底和设于所述衬底表面的图案化的半透膜。
其中，所述图案化的半透膜对应于非晶硅层的非硅岛区。
其中，所述缓冲层厚度为1000埃～2000埃。
其中，所述缓冲层为SiNx/SiO2双层结构。
其中，所述缓冲层为SiNx/SiNO/SiO2三层结构。
其中，所述非晶硅层厚度为300埃～800埃。
其中，所述衬底为透光的大理石衬底。
本发明还提供了一种低温多晶硅薄膜晶体管制作方法，应用上述任一项所述的低温多晶硅制作方法制作低温多晶硅层。
本发明还提供了一种低温多晶硅薄膜晶体管阵列基板制作方法，应用上述的低温多晶硅薄膜晶体管制作方法制作低温多晶硅薄膜晶体管。
综上，本发明的低温多晶硅、薄膜晶体管及阵列基板的制作方法可以使得多晶硅结晶效果更好，改善多晶硅薄膜晶体管的电性能，同时又能提升多晶硅层的干法刻蚀效率，释放生产制造多晶硅的产能。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为现有的低温多晶硅制作过程示意图；
图2为本发明低温多晶硅制作方法一较佳实施例的低温多晶硅制作过程示意图；
图3为本发明低温多晶硅制作方法一较佳实施例制作完成的低温多晶硅结构示意图。
具体实施方式
参见图2，其为本发明低温多晶硅制作方法一较佳实施例的低温多晶硅制作过程示意图。本发明的低温多晶硅制作方法提供了一种提高多晶硅层结晶均匀性的退火方法，主要包括：
提供基板10，在所述基板10上形成缓冲层20；首先，可以采用化学气相沉积法在玻璃衬底即基板10上形成厚度为1000埃～2000埃的SiNx/SiO2双层结构或SiNx/SiNO/SiO2三层结构缓冲层。
在所述缓冲层20上形成非晶硅层30；可以采用化学气相沉积法在缓冲层20上沉积非晶硅层30，非晶硅层30厚度可以为300埃～800埃。
在半透膜掩模板50的遮挡下对所述非晶硅层30进行准分子激光退火处理，使所述非晶硅层30转变为多晶硅层；利用激光器40发出准分子激光，然后在半透膜掩模板50的遮挡下对非晶硅层30进行激光退火。
半透膜掩模板50包括透光的衬底51和设于所述衬底51表面的图案化的半透膜52。半透膜掩模板50与传统的光刻掩模板设计方法相同，衬底51可以为透光的大理石衬底，利用半透膜52进行部分吸收激光能量，进而在非晶硅层30上产生照射温度梯度。因为最终形成的多晶硅层即为薄膜晶体管的有源层，所以半透膜掩模板50上的半透膜区域与有源层的非硅岛区对应，半透膜掩模板50的非半透膜区域与有源层的硅岛区对应，也就是图案化的半透膜52对应于非晶硅层30的非硅岛区。通过采用半透膜掩模板50，可以在硅岛区进行全开激光照射，其他区域进行半透膜遮挡退火，使得非晶硅层30的硅岛区温度大于其他区域的温度。
为提升制作效果，本发明低温多晶硅制作方法还可以包括现有制程中的常用步骤，例如对非晶硅层进行去氢处理，在此不再赘述。
参见图3，其为本发明低温多晶硅制作方法一较佳实施例制作完成的低温多晶硅结构示意图，展示了图2所示的基板10及缓冲层20上的非晶硅层30经退火完成后的结构。由于硅岛区温度大于其他区域的温度，因此温度梯度使得硅岛区结晶效果更好，形成硅岛区的多晶硅31，可以改善多晶硅薄膜晶体管的电性能。同时由于非硅岛区的温度较低，结晶度较差，形成非硅岛区的多晶硅32，因此更容易进行刻蚀，可以提升多晶硅层的干法刻蚀效率，释放生产制造多晶硅的产能。
应用本发明低温多晶硅制作方法，可以相应制作多晶硅结晶效果更好的低温多晶硅薄膜晶体管及阵列基板。
综上，本发明的低温多晶硅、薄膜晶体管及阵列基板的制作方法可以使得多晶硅结晶效果更好，改善多晶硅薄膜晶体管的电性能，同时又能提升多晶硅层的干法刻蚀效率，释放生产制造多晶硅的产能。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (9)

1.一种低温多晶硅制作方法，其特征在于，包括：
提供基板，在所述基板上形成缓冲层；
在所述缓冲层上形成非晶硅层；
在半透膜掩模板的遮挡下对所述非晶硅层进行准分子激光退火处理，使所述非晶硅层转变为多晶硅层；
所述半透膜掩模板包括透光的衬底和设于所述衬底表面的图案化的半透膜。
2.如权利要求1所述的低温多晶硅制作方法，其特征在于，所述图案化的半透膜对应于非晶硅层的非硅岛区。
3.如权利要求1所述的低温多晶硅制作方法，其特征在于，所述缓冲层厚度为1000埃～2000埃。
4.如权利要求1所述的低温多晶硅制作方法，其特征在于，所述缓冲层为SiNx/SiO2双层结构。
5.如权利要求1所述的低温多晶硅制作方法，其特征在于，所述缓冲层为SiNx/SiNO/SiO2三层结构。
6.如权利要求1所述的低温多晶硅制作方法，其特征在于，所述非晶硅层厚度为300埃～800埃。
7.如权利要求1所述的低温多晶硅制作方法，其特征在于，所述衬底为透光的大理石衬底。
8.一种低温多晶硅薄膜晶体管制作方法，其特征在于，应用如权利要求1～7中任一项所述的低温多晶硅制作方法制作低温多晶硅层。
9.一种低温多晶硅薄膜晶体管阵列基板制作方法，其特征在于，应用如权利要求8所述的低温多晶硅薄膜晶体管制作方法制作低温多晶硅薄膜晶体管。
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