CN103560076B - 提升多晶硅层均一性的多晶硅制作方法 - Google Patents

提升多晶硅层均一性的多晶硅制作方法 Download PDF

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CN103560076B
CN103560076B CN201310561925.9A CN201310561925A CN103560076B CN 103560076 B CN103560076 B CN 103560076B CN 201310561925 A CN201310561925 A CN 201310561925A CN 103560076 B CN103560076 B CN 103560076B
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张翔
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种提升多晶硅层均一性的多晶硅制作方法，包括：步骤1、在基板（10）上形成非晶硅层（30）；步骤2、将非晶硅层（30）划分为数个区域，测量非晶硅层（30）各区域的膜厚；步骤3、将各区域的测量膜厚分别与预定膜厚进行比较，对于测量膜厚大于预定膜厚的区域定义为膜厚偏厚区域（42），并进行标示；步骤4、对膜厚偏厚区域（42）的非晶硅层（30）喷洒蚀刻液进行清洗，以蚀刻掉膜厚偏厚区域（42）处的部分非晶硅层（30），同时对其它区域喷洒纯水进行清洗，进而使得非晶硅层（30’）各区域的膜厚趋于一致；步骤5、对清洗后的非晶硅层（30’）进行激光退火处理，以使非晶硅层（30’）结晶形成多晶硅层（60）。

Description

提升多晶硅层均一性的多晶硅制作方法
技术领域
本发明涉及显示技术领域，尤其涉及一种提升多晶硅层均一性的多晶硅制作方法。
背景技术
近年来显示技术发展很快，平板显示器以其完全不同的显示和制造技术使之同传统的视频图像显示器有很大的差别。传统的视频图像显示器主要为阴极射线管CRT(Cathoderaytubes)；而平板显示器与之的主要区别在于重量和体积(厚度)方面的变化，通常平板显示器的厚度不超过10cm，当然还有其它的不同，如显示原理、制造材料、工艺以及视频图像显示驱动方面的各项技术等。
平板显示器具有完全平面化、轻、薄、省电等特点，并朝着高分辨率、低功耗、高集成度的方向发展，但传统的非晶硅受限于自身的特性无法满足上述要求，作为非晶硅的最佳替代者——多晶硅能够满足平板显示器未来发展的需求，因此低温多晶硅（LTPS）显示技术成为显示领域的宠儿。
作为低温多晶硅显示技术的核心工艺环节，多晶硅的制作方式及材料特性决定着显示器的性能。目前已知的多晶硅制备方式包括：低压化学气相沉积（LowPressureChemicalVaporDeposition，LPCVD）、固相结晶、金属诱导和激光退火等。目前业界应用最为广泛的制备方式是激光退火工艺，通过激光产生的高温将非晶硅熔融重结晶成多晶硅。虽然通过调节激光的参数可以使得结晶效果得到优化，但退火后的多晶硅晶粒大小及均一性并非由激光参数唯一决定，其中化学气相沉积（ChemicalVaporDeposition，CVD）膜的厚度及氟化氢（HF）清洗的状况同样会影响到最终激光退火的工艺效果。
请参阅图1，其为现有技术中对非晶硅层进行激光退火处理的流程示意图，对均一性不是很好的非晶硅层100（存在部分区域102的膜厚偏厚）仅喷氟化氢200进行清洗，清洗后经过激光处理得到的多晶硅层300仍存在均一性问题。
发明内容
本发明的目的在于提供一种提升多晶硅层均一性的多晶硅制作方法，采用清洗单元对非晶硅层的膜厚偏厚区域进行部分蚀刻，以提升激光退火得到的多晶硅层的均一性。
为实现上述目的，本发明提供一种提升多晶硅层均一性的多晶硅制作方法，包括以下步骤：
步骤1、在基板上形成非晶硅层；
步骤2、将非晶硅层划分为数个区域，测量非晶硅层各区域的膜厚；
步骤3、将各区域的测量膜厚分别与预定膜厚进行比较，对于测量膜厚大于预定膜厚的区域定义为膜厚偏厚区域，并进行标示；
步骤4、对膜厚偏厚区域的非晶硅层喷洒蚀刻液进行清洗，以蚀刻掉膜厚偏厚区域处的部分非晶硅层，同时对其它区域喷洒纯水进行清洗，进而使得非晶硅层各区域的膜厚趋于一致；
步骤5、对清洗后的非晶硅层进行激光退火处理，以使非晶硅层结晶形成多晶硅层。
所述步骤1中还包括在所述基板上沉积形成一缓冲层，所述非晶硅层形成于所述缓冲层上。
所述缓冲层由氮化硅及氧化硅依次沉积而形成。
所述步骤2中采用一厚度测量装置测量非晶硅层各区域的膜厚，所述厚度测量装置内预先储存有预定膜厚。
所述步骤4中采用清洗单元对非晶硅层进行清洗，该清洗单元包括：数根相互平行的蚀刻液管路、以及数根相互平行的纯水管路，所述数根蚀刻液管路与所述数根纯水管路相垂直，所述数根蚀刻液管路靠近非晶硅层的一侧设有数个喷嘴，所述数根纯水管路靠近非晶硅层的一侧设有数个喷嘴。
所述蚀刻液为氟化氢。
所述步骤5中对清洗后的非晶硅层进行激光退火处理为采用激光照射清洗后的非晶硅层。
所述激光的波长为308nm。
所述基板为玻璃基板。
所述基板为塑料基板。
本发明的有益效果：本发明提供一种提升多晶硅层均一性的多晶硅制作方法，采用厚度测量装置测量非晶硅层各区域的膜厚，以得出膜厚偏厚区域，并采用清洗单元提供蚀刻液对膜厚偏厚区域的非晶硅层进行清洗，以蚀刻掉膜厚偏厚区域处的部分非晶硅层，同时提供纯水对其它区域进行清洗，进而使得非晶硅层各处的膜厚趋于一致，以提升激光退火得到的多晶硅层的均一性。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有技术中对非晶硅层进行激光退火处理的流程示意图；
图2为本发明提升多晶硅均一性的多晶硅制作方法的流程图；
图3为本发明中清洗单元的结构示意图；
图4为本发明中厚度测量装置测量非晶硅层膜厚的示意图；
图5为本发明中清洗单元对非晶硅层进行清洗的示意图；
图6为本发明中非晶硅层清洗后的示意图；
图7为本发明中对清洗后的非晶硅层进行激光退火处理示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2至图7，本发明提供一种提升多晶硅层均一性的多晶硅制作方法，包括以下步骤：
步骤1、在基板10上形成非晶硅层30。
该步骤还包括在所述基板10上沉积形成一缓冲层20，所述非晶硅层30形成于所述缓冲层20上。
该缓冲层20及非晶硅层30均可按照现有工艺条件沉积而形成。所述缓冲层20由氮化硅及氧化硅依次沉积而形成。
步骤2、将非晶硅层30划分为数个区域，测量非晶硅层30各区域的膜厚。
在本步骤中，采用厚度测量装置40测量非晶硅层30各区域的膜厚，该厚度测量装置40内预先储存有预定膜厚。
本实施例中可以将非晶硅层30提前划分成多个区域进行测量，且区域的个数越多，最后加工得到的多晶硅层60的均一性就越好。但在本实施例中，为了提高测量速度且兼顾测量质量，优选的，可将非晶硅层30划分为16个或32个区域进行测量。
步骤3、将各区域的测量膜厚分别与预定膜厚进行比较，对于测量膜厚大于预定膜厚的区域定义为膜厚偏厚区域42，并进行标示。
将测量各区域得到的膜厚与预先储存于厚度测量装置40中的平均膜厚相比较，将膜厚大于预定膜厚的区域定义为膜厚偏厚区域42，并进行标示。
步骤4、对膜厚偏厚区域42的非晶硅层30喷洒蚀刻液进行清洗，以蚀刻掉膜厚偏厚区域42处的部分非晶硅层30，同时对其它区域喷洒纯水进行清洗，进而使得非晶硅层30各区域的膜厚趋于一致。
该步骤中采用清洗单元50对非晶硅层30进行清洗，该清洗单元50包括：数根相互平行的蚀刻液管路52、以及数根相互平行的纯水管路54，所述数根蚀刻液管路52与所述数根纯水管路54相垂直。所述数根蚀刻液管路52靠近非晶硅层30的一侧设有数个喷嘴56，该些喷嘴56可自动打开也可以自动关闭以控制喷洒蚀刻液；同样，所述数根纯水管路54靠近非晶硅层30的一侧设有数个喷嘴56，该些喷嘴56可自动打开也可以自动关闭以控制喷洒纯水，进而，可以控制单独喷洒蚀刻液对膜厚偏厚区域42的非晶硅层30进行清洗，以蚀刻掉膜厚偏厚区域42处的部分非晶硅层30；同时对其它区域喷洒纯水以弱化从所述膜厚偏厚区域42扩散至该其它区域的蚀刻液而进行清洗，进而使得非晶硅层30’各处的膜厚趋于一致。在本实施例中，所述蚀刻液为氟化氢。
步骤5、对清洗后的非晶硅层30’进行激光退火处理，以使非晶硅层30’结晶形成多晶硅层60。
上述的激光退火处理即为采用激光70照射清洗后的非晶硅层30。所述激光70的波长优选为308nm。
在激光退火处理前，采用清洗单元50按上述方法进行清洗后，使得清洗后的非晶硅层30’各处的膜厚趋于一致，进而激光退火处理后，得到的多晶硅层60的均一性优于现有技术处理得到的多晶硅层的均一性。
综上所述，本发明提供一种提升多晶硅层均一性的多晶硅制作方法，采用厚度测量装置测量非晶硅层各区域的膜厚，以得出膜厚偏厚区域，并采用清洗单元提供蚀刻液对膜厚偏厚区域的非晶硅层进行清洗，以蚀刻掉膜厚偏厚区域处的部分非晶硅层，同时提供纯水对其它区域进行清洗，进而使得非晶硅层各处的膜厚趋于一致，以提升激光退火得到的多晶硅层的均一性。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种提升多晶硅层均一性的多晶硅制作方法，其特征在于，包括以下步骤：
步骤1、在基板（10）上形成非晶硅层（30）；
步骤2、将非晶硅层（30）划分为数个区域，测量非晶硅层（30）各区域的膜厚；
步骤3、将各区域的测量膜厚分别与预定膜厚进行比较，对于测量膜厚大于预定膜厚的区域定义为膜厚偏厚区域（42），并进行标示；
步骤4、对膜厚偏厚区域（42）的非晶硅层（30）喷洒蚀刻液进行清洗，以蚀刻掉膜厚偏厚区域（42）处的部分非晶硅层（30），同时对其它区域喷洒纯水进行清洗，进而使得非晶硅层（30’）各区域的膜厚趋于一致；
步骤5、对清洗后的非晶硅层（30’）进行激光退火处理，以使非晶硅层（30’）结晶形成多晶硅层（60）。
2.如权利要求1所述的提升多晶硅层均一性的多晶硅制作方法，其特征在于，所述步骤1中还包括在所述基板（10）上沉积形成一缓冲层（20），所述非晶硅层（30）形成于所述缓冲层（20）上。
3.如权利要求2所述的提升多晶硅层均一性的多晶硅制作方法，其特征在于，所述缓冲层（20）由氮化硅及氧化硅依次沉积而形成。
4.如权利要求1所述的提升多晶硅层均一性的多晶硅制作方法，其特征在于，所述步骤2中采用一厚度测量装置（40）测量非晶硅层（30）各区域的膜厚，所述厚度测量装置（40）内预先储存有预定膜厚。
5.如权利要求1所述的提升多晶硅层均一性的多晶硅制作方法，其特征在于，所述步骤4中采用清洗单元（50）对非晶硅层（30）进行清洗，该清洗单元（50）包括：数根相互平行的蚀刻液管路（52）、以及数根相互平行的纯水管路（54），所述数根蚀刻液管路（52）与所述数根纯水管路（54）相垂直，所述数根蚀刻液管路（52）靠近非晶硅层（30）的一侧设有数个喷嘴（56），所述数根纯水管路（54）靠近非晶硅层（30）的一侧设有数个喷嘴（56）。
6.如权利要求5所述的提升多晶硅层均一性的多晶硅制作方法，其特征在于，所述蚀刻液为氟化氢。
7.如权利要求1所述的提升多晶硅层均一性的多晶硅制作方法，其特征在于，所述步骤5中对清洗后的非晶硅层（30’）进行激光退火处理为采用激光（70）照射清洗后的非晶硅层（30’）。
8.如权利要求7所述的提升多晶硅层均一性的多晶硅制作方法，其特征在于，所述激光（70）的波长为308nm。
9.如权利要求1所述的提升多晶硅层均一性的多晶硅制作方法，其特征在于，所述基板（10）为玻璃基板。
10.如权利要求1所述的提升多晶硅层均一性的多晶硅制作方法，其特征在于，所述基板（10）为塑料基板。
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