TWI654716B - 處理晶圓的方法 - Google Patents

處理晶圓的方法

Info

Publication number
TWI654716B
TWI654716B TW105127887A TW105127887A TWI654716B TW I654716 B TWI654716 B TW I654716B TW 105127887 A TW105127887 A TW 105127887A TW 105127887 A TW105127887 A TW 105127887A TW I654716 B TWI654716 B TW I654716B
Authority
TW
Taiwan
Prior art keywords
wafer
protective film
carrier
curable resin
resin
Prior art date
Application number
TW105127887A
Other languages
English (en)
Chinese (zh)
Other versions
TW201719814A (zh
Inventor
Karl Heinz Priewasser
凱爾Ｈ 普瑞渥瑟
Original Assignee
Disco Corporation
迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corporation, 迪思科股份有限公司 filed Critical Disco Corporation
Publication of TW201719814A publication Critical patent/TW201719814A/zh
Application granted granted Critical
Publication of TWI654716B publication Critical patent/TWI654716B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
    • B81C1/00825—Protect against mechanical threats, e.g. against shocks, or residues
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00896—Temporary protection during separation into individual elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/05—Temporary protection of devices or parts of the devices during manufacturing
    • B81C2201/053—Depositing a protective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01204—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231—Shapes
    • H10W72/232—Plan-view shape, i.e. in top view

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
TW105127887A 2015-08-31 2016-08-30 處理晶圓的方法 TWI654716B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015216619.8A DE102015216619B4 (de) 2015-08-31 2015-08-31 Verfahren zum Bearbeiten eines Wafers
DE102015216619.8 2015-08-31

Publications (2)

Publication Number Publication Date
TW201719814A TW201719814A (zh) 2017-06-01
TWI654716B true TWI654716B (zh) 2019-03-21

Family

ID=58010729

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105127887A TWI654716B (zh) 2015-08-31 2016-08-30 處理晶圓的方法

Country Status (6)

Country Link
US (1) US10256148B2 (https=)
JP (1) JP6312343B2 (https=)
KR (1) KR101860210B1 (https=)
CN (1) CN106486408B (https=)
DE (1) DE102015216619B4 (https=)
TW (1) TWI654716B (https=)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11437275B2 (en) 2015-08-31 2022-09-06 Disco Corporation Method of processing wafer and protective sheeting for use in this method
JP6500230B2 (ja) * 2015-09-03 2019-04-17 パナソニックＩｐマネジメント株式会社 マスクパターンの形成方法および基板の加工方法ならびに素子チップの製造方法
GB2551732B (en) * 2016-06-28 2020-05-27 Disco Corp Method of processing wafer
JP2018156973A (ja) * 2017-03-15 2018-10-04 株式会社ディスコ ウェーハの加工方法
JP6906843B2 (ja) * 2017-04-28 2021-07-21 株式会社ディスコ ウェーハの加工方法
JP6925714B2 (ja) * 2017-05-11 2021-08-25 株式会社ディスコ ウェーハの加工方法
JP6837717B2 (ja) * 2017-05-11 2021-03-03 株式会社ディスコ ウェーハの加工方法
DE102017208405B4 (de) * 2017-05-18 2024-05-02 Disco Corporation Verfahren zum Bearbeiten eines Wafers und Schutzfolie
CN110663106B (zh) 2017-05-18 2023-09-22 株式会社迪思科 在加工晶圆中使用的保护片、用于晶圆的处理系统以及晶圆与保护片的组合体
JP6914587B2 (ja) * 2017-05-25 2021-08-04 株式会社ディスコ ウェーハの加工方法
JP2019009372A (ja) * 2017-06-28 2019-01-17 株式会社ディスコ ウエーハの研削方法
JP6999322B2 (ja) * 2017-07-31 2022-01-18 株式会社ディスコ ウエーハの研削方法
JP7025171B2 (ja) 2017-10-12 2022-02-24 株式会社ディスコ 被加工物の研削方法
JP7071782B2 (ja) * 2017-12-28 2022-05-19 株式会社ディスコ ウェーハの加工方法
DE102018202254A1 (de) 2018-02-14 2019-08-14 Disco Corporation Verfahren zum Bearbeiten eines Wafers
JP2019149451A (ja) * 2018-02-27 2019-09-05 株式会社ディスコ 板状物の加工方法
JP7034809B2 (ja) * 2018-04-09 2022-03-14 株式会社ディスコ 保護シート配設方法
JP7214364B2 (ja) * 2018-05-01 2023-01-30 株式会社ディスコ ウエーハの加工方法
DE102019110402A1 (de) 2018-05-25 2019-11-28 Infineon Technologies Ag Ein Verfahren zum Bearbeiten eines Halbleiterwafers, eine Halbleiter-Verbundstruktur und eine Stützstruktur für einen Halbleiterwafer
JP7114176B2 (ja) * 2018-06-01 2022-08-08 株式会社ディスコ 樹脂パッケージ基板の加工方法
JP2019212825A (ja) * 2018-06-06 2019-12-12 株式会社ディスコ ウェーハの加工方法
FR3085230B1 (fr) * 2018-08-27 2023-01-13 Ommic Separation d’une plaque en composants individuels
JP2020035918A (ja) * 2018-08-30 2020-03-05 株式会社ディスコ 被加工物の加工方法
KR102725960B1 (ko) * 2018-10-22 2024-11-04 린텍 가부시키가이샤 반도체 장치의 제조 방법
FR3091621B1 (fr) 2019-01-04 2020-12-11 Commissariat Energie Atomique Procede de mise en courbure collective d’un ensemble de puces electroniques
US12312512B2 (en) 2019-02-26 2025-05-27 Disco Corporation Adhesive sheet for backgrinding and production method for semiconductor wafer
US12243766B2 (en) 2019-02-26 2025-03-04 Disco Corporation Back grinding adhesive sheet, and method for manufacturing semiconductor wafer
FR3099290B1 (fr) 2019-07-26 2021-07-02 Commissariat Energie Atomique Procédé de mise en courbure collective d’un ensemble de puces électroniques
JP7266953B2 (ja) 2019-08-07 2023-05-01 株式会社ディスコ 保護部材形成方法及び保護部材形成装置
JP7286250B2 (ja) 2019-08-07 2023-06-05 株式会社ディスコ 保護部材形成装置
JP7355568B2 (ja) * 2019-09-17 2023-10-03 株式会社ディスコ ウエーハの加工方法
JP7399565B2 (ja) * 2019-12-23 2023-12-18 株式会社ディスコ 被加工物の加工方法
CN111900083B (zh) * 2020-07-01 2022-08-16 上海华虹宏力半导体制造有限公司 Igbt晶圆的减薄方法
JP7450482B2 (ja) 2020-07-15 2024-03-15 株式会社ディスコ 保護部材形成装置
JP7475232B2 (ja) 2020-07-22 2024-04-26 株式会社ディスコ 保護部材形成装置
DE102020210104B4 (de) * 2020-08-10 2025-02-06 Disco Corporation Verfahren zum bearbeiten eines substrats
JP7529478B2 (ja) * 2020-08-13 2024-08-06 株式会社ディスコ ウェーハの加工方法
JP7562333B2 (ja) * 2020-08-20 2024-10-07 株式会社東京精密 フライカット装置
JP2022035860A (ja) 2020-08-21 2022-03-04 株式会社ディスコ 保護部材形成装置
JP2022041447A (ja) * 2020-09-01 2022-03-11 株式会社ディスコ ウェーハの加工方法
JP7599982B2 (ja) * 2021-02-09 2024-12-16 株式会社ディスコ シート貼着装置
JP7628369B2 (ja) 2021-05-31 2025-02-10 株式会社ディスコ 樹脂シート、樹脂シートの製造方法、及び樹脂被覆方法
DE102021209979A1 (de) * 2021-09-09 2023-03-09 Disco Corporation Verfahren zur bearbeitung eines substrats
JP7803729B2 (ja) 2022-02-16 2026-01-21 株式会社ディスコ 被覆方法
DE102023208767A1 (de) * 2023-09-11 2025-03-13 Disco Corporation Werkstückunterstützung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6777267B2 (en) 2002-11-01 2004-08-17 Agilent Technologies, Inc. Die singulation using deep silicon etching

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320058B2 (https=) 1974-03-25 1978-06-24
JPS5131723A (ja) 1974-09-13 1976-03-18 Mizusawa Industrial Chem Setsuchakuseinokaizensareta mizugarasusoseibutsu
DE10121556A1 (de) * 2001-05-03 2002-11-14 Infineon Technologies Ag Verfahren zum Rückseitenschleifen von Wafern
CN101483144B (zh) * 2002-12-27 2013-08-28 富士通株式会社 半导体器件及其制法、基板处理装置和半导体制造装置
CN1808692A (zh) * 2004-12-22 2006-07-26 国家淀粉及化学投资控股公司 热熔性底部填充胶组合物及其涂覆方法
JP2007266191A (ja) * 2006-03-28 2007-10-11 Nec Electronics Corp ウェハ処理方法
JP2008060361A (ja) * 2006-08-31 2008-03-13 Nitto Denko Corp 半導体ウェハの加工方法、及びそれに用いる半導体ウェハ加工用粘着シート
JP2008159985A (ja) 2006-12-26 2008-07-10 Matsushita Electric Ind Co Ltd 半導体チップの製造方法
TWI324802B (en) * 2007-02-16 2010-05-11 Advanced Semiconductor Eng Method of thinning wafer
JP2009212300A (ja) * 2008-03-04 2009-09-17 Hitachi Chem Co Ltd 半導体ウエハのバックグラインド方法、半導体ウエハのダイシング方法、及び半導体チップの実装方法
JP5320058B2 (ja) 2008-12-26 2013-10-23 株式会社ディスコ 樹脂被覆方法および樹脂被覆装置
JP5324212B2 (ja) 2008-12-26 2013-10-23 株式会社ディスコ 樹脂被覆方法および樹脂被覆装置
US20110028150A1 (en) * 2009-08-03 2011-02-03 Mamadou Kone Method of Updating Management Information and Related Communication Device
JP5545640B2 (ja) * 2010-05-11 2014-07-09 株式会社ディスコ 研削方法
JP2012079910A (ja) * 2010-10-01 2012-04-19 Disco Abrasive Syst Ltd 板状物の加工方法
JP2012099622A (ja) * 2010-11-02 2012-05-24 Panasonic Corp 半導体装置の製造方法および製造装置
JP2012119594A (ja) * 2010-12-03 2012-06-21 Disco Abrasive Syst Ltd 板状物の加工方法
WO2012124123A1 (ja) * 2011-03-17 2012-09-20 富士通株式会社 画像処理装置、画像処理方法及び画像処理プログラム
JP2013162096A (ja) * 2012-02-08 2013-08-19 Fujitsu Semiconductor Ltd 半導体チップの製造方法及びラミネート装置
JP5770677B2 (ja) * 2012-05-08 2015-08-26 株式会社ディスコ ウェーハの加工方法
JP6061590B2 (ja) 2012-09-27 2017-01-18 株式会社ディスコ 表面保護部材および加工方法
US9184083B2 (en) 2013-07-29 2015-11-10 3M Innovative Properties Company Apparatus, hybrid laminated body, method and materials for temporary substrate support

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6777267B2 (en) 2002-11-01 2004-08-17 Agilent Technologies, Inc. Die singulation using deep silicon etching

Also Published As

Publication number Publication date
JP2017050536A (ja) 2017-03-09
US10256148B2 (en) 2019-04-09
KR20170026301A (ko) 2017-03-08
JP6312343B2 (ja) 2018-04-18
CN106486408B (zh) 2019-06-11
US20170062278A1 (en) 2017-03-02
DE102015216619A1 (de) 2017-03-02
TW201719814A (zh) 2017-06-01
CN106486408A (zh) 2017-03-08
DE102015216619B4 (de) 2017-08-10
KR101860210B1 (ko) 2018-05-21

Similar Documents

Publication Publication Date Title
TWI654716B (zh) 處理晶圓的方法
JP6657515B2 (ja) ウェーハを処理する方法および該方法で使用するための保護シート
KR102482627B1 (ko) 웨이퍼를 처리하는 방법
TWI683392B (zh) 處理晶圓的方法
JP7205810B2 (ja) ウェハを処理する方法
TWI795402B (zh) 在處理晶圓中使用的保護片、用於晶圓之處置系統、及晶圓與保護片之組合