KR101860210B1 - 웨이퍼 프로세싱 방법 - Google Patents

웨이퍼 프로세싱 방법 Download PDF

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Publication number
KR101860210B1
KR101860210B1 KR1020160111611A KR20160111611A KR101860210B1 KR 101860210 B1 KR101860210 B1 KR 101860210B1 KR 1020160111611 A KR1020160111611 A KR 1020160111611A KR 20160111611 A KR20160111611 A KR 20160111611A KR 101860210 B1 KR101860210 B1 KR 101860210B1
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South Korea
Prior art keywords
wafer
protective film
carrier
curable resin
protrusions
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Korean (ko)
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KR20170026301A (ko
Inventor
칼 하인츠 프리바써
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가부시기가이샤 디스코
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    • H01L21/02013—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
    • B81C1/00825—Protect against mechanical threats, e.g. against shocks, or residues
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00896—Temporary protection during separation into individual elements
    • H01L21/56—
    • H01L21/67092—
    • H01L21/6836—
    • H01L21/76—
    • H01L21/78—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/05—Temporary protection of devices or parts of the devices during manufacturing
    • B81C2201/053—Depositing a protective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01204—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231—Shapes
    • H10W72/232—Plan-view shape, i.e. in top view

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
KR1020160111611A 2015-08-31 2016-08-31 웨이퍼 프로세싱 방법 Active KR101860210B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015216619.8A DE102015216619B4 (de) 2015-08-31 2015-08-31 Verfahren zum Bearbeiten eines Wafers
DE102015216619.8 2015-08-31

Publications (2)

Publication Number Publication Date
KR20170026301A KR20170026301A (ko) 2017-03-08
KR101860210B1 true KR101860210B1 (ko) 2018-05-21

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Country Status (6)

Country Link
US (1) US10256148B2 (https=)
JP (1) JP6312343B2 (https=)
KR (1) KR101860210B1 (https=)
CN (1) CN106486408B (https=)
DE (1) DE102015216619B4 (https=)
TW (1) TWI654716B (https=)

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KR20210128388A (ko) * 2019-02-26 2021-10-26 가부시기가이샤 디스코 이면 연삭용 점착 시트 및 반도체 웨이퍼의 제조 방법

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GB2551732B (en) * 2016-06-28 2020-05-27 Disco Corp Method of processing wafer
JP2018156973A (ja) * 2017-03-15 2018-10-04 株式会社ディスコ ウェーハの加工方法
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JP6925714B2 (ja) * 2017-05-11 2021-08-25 株式会社ディスコ ウェーハの加工方法
JP6837717B2 (ja) * 2017-05-11 2021-03-03 株式会社ディスコ ウェーハの加工方法
DE102017208405B4 (de) * 2017-05-18 2024-05-02 Disco Corporation Verfahren zum Bearbeiten eines Wafers und Schutzfolie
CN110663106B (zh) 2017-05-18 2023-09-22 株式会社迪思科 在加工晶圆中使用的保护片、用于晶圆的处理系统以及晶圆与保护片的组合体
JP6914587B2 (ja) * 2017-05-25 2021-08-04 株式会社ディスコ ウェーハの加工方法
JP2019009372A (ja) * 2017-06-28 2019-01-17 株式会社ディスコ ウエーハの研削方法
JP6999322B2 (ja) * 2017-07-31 2022-01-18 株式会社ディスコ ウエーハの研削方法
JP7025171B2 (ja) 2017-10-12 2022-02-24 株式会社ディスコ 被加工物の研削方法
JP7071782B2 (ja) * 2017-12-28 2022-05-19 株式会社ディスコ ウェーハの加工方法
DE102018202254A1 (de) 2018-02-14 2019-08-14 Disco Corporation Verfahren zum Bearbeiten eines Wafers
JP2019149451A (ja) * 2018-02-27 2019-09-05 株式会社ディスコ 板状物の加工方法
JP7034809B2 (ja) * 2018-04-09 2022-03-14 株式会社ディスコ 保護シート配設方法
JP7214364B2 (ja) * 2018-05-01 2023-01-30 株式会社ディスコ ウエーハの加工方法
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JP7114176B2 (ja) * 2018-06-01 2022-08-08 株式会社ディスコ 樹脂パッケージ基板の加工方法
JP2019212825A (ja) * 2018-06-06 2019-12-12 株式会社ディスコ ウェーハの加工方法
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JP2020035918A (ja) * 2018-08-30 2020-03-05 株式会社ディスコ 被加工物の加工方法
KR102725960B1 (ko) * 2018-10-22 2024-11-04 린텍 가부시키가이샤 반도체 장치의 제조 방법
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US12243766B2 (en) 2019-02-26 2025-03-04 Disco Corporation Back grinding adhesive sheet, and method for manufacturing semiconductor wafer
FR3099290B1 (fr) 2019-07-26 2021-07-02 Commissariat Energie Atomique Procédé de mise en courbure collective d’un ensemble de puces électroniques
JP7266953B2 (ja) 2019-08-07 2023-05-01 株式会社ディスコ 保護部材形成方法及び保護部材形成装置
JP7286250B2 (ja) 2019-08-07 2023-06-05 株式会社ディスコ 保護部材形成装置
JP7355568B2 (ja) * 2019-09-17 2023-10-03 株式会社ディスコ ウエーハの加工方法
JP7399565B2 (ja) * 2019-12-23 2023-12-18 株式会社ディスコ 被加工物の加工方法
CN111900083B (zh) * 2020-07-01 2022-08-16 上海华虹宏力半导体制造有限公司 Igbt晶圆的减薄方法
JP7450482B2 (ja) 2020-07-15 2024-03-15 株式会社ディスコ 保護部材形成装置
JP7475232B2 (ja) 2020-07-22 2024-04-26 株式会社ディスコ 保護部材形成装置
DE102020210104B4 (de) * 2020-08-10 2025-02-06 Disco Corporation Verfahren zum bearbeiten eines substrats
JP7529478B2 (ja) * 2020-08-13 2024-08-06 株式会社ディスコ ウェーハの加工方法
JP7562333B2 (ja) * 2020-08-20 2024-10-07 株式会社東京精密 フライカット装置
JP2022035860A (ja) 2020-08-21 2022-03-04 株式会社ディスコ 保護部材形成装置
JP2022041447A (ja) * 2020-09-01 2022-03-11 株式会社ディスコ ウェーハの加工方法
JP7599982B2 (ja) * 2021-02-09 2024-12-16 株式会社ディスコ シート貼着装置
JP7628369B2 (ja) 2021-05-31 2025-02-10 株式会社ディスコ 樹脂シート、樹脂シートの製造方法、及び樹脂被覆方法
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JP7803729B2 (ja) 2022-02-16 2026-01-21 株式会社ディスコ 被覆方法
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Publication number Priority date Publication date Assignee Title
KR20210128388A (ko) * 2019-02-26 2021-10-26 가부시기가이샤 디스코 이면 연삭용 점착 시트 및 반도체 웨이퍼의 제조 방법
KR102743885B1 (ko) 2019-02-26 2024-12-16 가부시기가이샤 디스코 이면 연삭용 점착 시트 및 반도체 웨이퍼의 제조 방법

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JP2017050536A (ja) 2017-03-09
US10256148B2 (en) 2019-04-09
TWI654716B (zh) 2019-03-21
KR20170026301A (ko) 2017-03-08
JP6312343B2 (ja) 2018-04-18
CN106486408B (zh) 2019-06-11
US20170062278A1 (en) 2017-03-02
DE102015216619A1 (de) 2017-03-02
TW201719814A (zh) 2017-06-01
CN106486408A (zh) 2017-03-08
DE102015216619B4 (de) 2017-08-10

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