TWI646644B - 半導體裝置 - Google Patents
半導體裝置 Download PDFInfo
- Publication number
- TWI646644B TWI646644B TW106121861A TW106121861A TWI646644B TW I646644 B TWI646644 B TW I646644B TW 106121861 A TW106121861 A TW 106121861A TW 106121861 A TW106121861 A TW 106121861A TW I646644 B TWI646644 B TW I646644B
- Authority
- TW
- Taiwan
- Prior art keywords
- bonding
- region
- protective film
- bonding pad
- semiconductor wafer
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
- H10P74/273—Interconnections for measuring or testing, e.g. probe pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07531—Techniques
- H10W72/07532—Compression bonding, e.g. thermocompression bonding
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07531—Techniques
- H10W72/07532—Compression bonding, e.g. thermocompression bonding
- H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/29—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/944—Dispositions of multiple bond pads
- H10W72/9445—Top-view layouts, e.g. mirror arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/981—Auxiliary members, e.g. spacers
- H10W72/983—Reinforcing structures, e.g. collars
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/755—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent insulating package substrate, interpose or RDL
Landscapes
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009121857A JP5160498B2 (ja) | 2009-05-20 | 2009-05-20 | 半導体装置 |
| JP2009-121857 | 2009-05-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201733061A TW201733061A (zh) | 2017-09-16 |
| TWI646644B true TWI646644B (zh) | 2019-01-01 |
Family
ID=43103961
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106121861A TWI646644B (zh) | 2009-05-20 | 2010-04-20 | 半導體裝置 |
| TW099112370A TWI548051B (zh) | 2009-05-20 | 2010-04-20 | Semiconductor device |
| TW105120867A TWI596724B (zh) | 2009-05-20 | 2010-04-20 | Semiconductor device |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099112370A TWI548051B (zh) | 2009-05-20 | 2010-04-20 | Semiconductor device |
| TW105120867A TWI596724B (zh) | 2009-05-20 | 2010-04-20 | Semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (4) | US8946705B2 (https=) |
| JP (1) | JP5160498B2 (https=) |
| CN (3) | CN106024744A (https=) |
| TW (3) | TWI646644B (https=) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8115321B2 (en) * | 2009-04-30 | 2012-02-14 | Lsi Corporation | Separate probe and bond regions of an integrated circuit |
| JP5160498B2 (ja) * | 2009-05-20 | 2013-03-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP5618873B2 (ja) * | 2011-03-15 | 2014-11-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2013062328A (ja) * | 2011-09-12 | 2013-04-04 | Toshiba Corp | 半導体装置 |
| JP5926988B2 (ja) * | 2012-03-08 | 2016-05-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US9111847B2 (en) * | 2012-06-15 | 2015-08-18 | Infineon Technologies Ag | Method for manufacturing a chip package, a method for manufacturing a wafer level package, a chip package and a wafer level package |
| WO2013010512A2 (en) * | 2012-10-22 | 2013-01-24 | Spreadtrum Communications (Shanghai) Co., Ltd. | Apparatus and method of electrical testing for flip chip |
| CN103107128B (zh) * | 2013-01-14 | 2014-12-17 | 武汉新芯集成电路制造有限公司 | 一种三维芯片结构的金属键合的方法 |
| JP6149503B2 (ja) * | 2013-05-17 | 2017-06-21 | 住友電気工業株式会社 | 半導体装置 |
| JP5858952B2 (ja) * | 2013-05-20 | 2016-02-10 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP6235353B2 (ja) * | 2014-01-22 | 2017-11-22 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP6279339B2 (ja) * | 2014-02-07 | 2018-02-14 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP6215755B2 (ja) | 2014-04-14 | 2017-10-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP6522980B2 (ja) * | 2015-02-18 | 2019-05-29 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US9881870B2 (en) * | 2015-12-30 | 2018-01-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP7127413B2 (ja) * | 2018-08-03 | 2022-08-30 | 富士電機株式会社 | 抵抗素子及びその製造方法 |
| CN109166838A (zh) * | 2018-08-29 | 2019-01-08 | 上海华虹宏力半导体制造有限公司 | 顶层金属键合垫的引出结构及其制造方法 |
| CN109719381A (zh) * | 2019-02-21 | 2019-05-07 | 巴中市特兴智能科技有限公司 | 一种自动焊接键合金线的工艺方法 |
| US11205625B2 (en) | 2019-04-12 | 2021-12-21 | Invensas Bonding Technologies, Inc. | Wafer-level bonding of obstructive elements |
| US11610846B2 (en) | 2019-04-12 | 2023-03-21 | Adeia Semiconductor Bonding Technologies Inc. | Protective elements for bonded structures including an obstructive element |
| US11373963B2 (en) | 2019-04-12 | 2022-06-28 | Invensas Bonding Technologies, Inc. | Protective elements for bonded structures |
| US11385278B2 (en) | 2019-05-23 | 2022-07-12 | Invensas Bonding Technologies, Inc. | Security circuitry for bonded structures |
| JP7200066B2 (ja) * | 2019-08-22 | 2023-01-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| KR102737535B1 (ko) | 2019-11-28 | 2024-12-02 | 엘지디스플레이 주식회사 | 표시 장치 |
| WO2021189488A1 (zh) * | 2020-03-27 | 2021-09-30 | 京东方科技集团股份有限公司 | 显示面板和显示装置 |
| KR102791224B1 (ko) * | 2020-04-20 | 2025-04-07 | 에스케이하이닉스 주식회사 | 서로 엇갈리게 배열되는 본드 핑거를 구비하는 패키지 기판을 포함하는 반도체 패키지 |
| US11043435B1 (en) * | 2020-05-18 | 2021-06-22 | Innogrit Technologies Co., Ltd. | Semiconductor die with hybrid wire bond pads |
| KR20240036698A (ko) | 2021-08-02 | 2024-03-20 | 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 | 결합 구조체를 위한 보호 반도체 소자 |
| TWI836611B (zh) * | 2022-09-19 | 2024-03-21 | 華東科技股份有限公司 | 晶墊具保護層的晶片封裝結構 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200515519A (en) * | 2003-10-29 | 2005-05-01 | Taiwan Semiconductor Mfg Co Ltd | Bonding pad structure |
| US20060186405A1 (en) * | 2005-02-08 | 2006-08-24 | Nec Electronics Corporation | Semiconductor device and manufacturing process therefor |
| TW200802643A (en) * | 2006-06-14 | 2008-01-01 | Novatek Microelectronics Corp | Chip structure |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0220034A (ja) * | 1988-07-07 | 1990-01-23 | Matsushita Electron Corp | 半導体装置 |
| JPH0379055A (ja) | 1989-08-23 | 1991-04-04 | New Japan Radio Co Ltd | 半導体素子 |
| JP3022819B2 (ja) * | 1997-08-27 | 2000-03-21 | 日本電気アイシーマイコンシステム株式会社 | 半導体集積回路装置 |
| JP3843624B2 (ja) | 1998-11-27 | 2006-11-08 | 松下電器産業株式会社 | 半導体集積回路装置及び半導体集積回路装置の組立方法 |
| JP2001338955A (ja) * | 2000-05-29 | 2001-12-07 | Texas Instr Japan Ltd | 半導体装置及びその製造方法 |
| CN100407422C (zh) * | 2001-06-07 | 2008-07-30 | 株式会社瑞萨科技 | 半导体装置及其制造方法 |
| JP2003142485A (ja) * | 2001-11-01 | 2003-05-16 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP4065799B2 (ja) * | 2003-03-12 | 2008-03-26 | 株式会社ルネサステクノロジ | 超音波接合装置および方法 |
| JP4803966B2 (ja) * | 2004-03-31 | 2011-10-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2006303452A (ja) * | 2005-03-25 | 2006-11-02 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| US20070075396A1 (en) * | 2005-09-30 | 2007-04-05 | Elpida Memory, Inc. | Semiconductor device and manufacturing method thereof |
| KR100727490B1 (ko) * | 2005-12-08 | 2007-06-13 | 삼성전자주식회사 | 본딩 영역과 프로빙 영역을 구분하기 위한 식별표시가구비된 반도체 장치 및 그 제조방법 |
| JP5050384B2 (ja) * | 2006-03-31 | 2012-10-17 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
| JP4951276B2 (ja) | 2006-05-29 | 2012-06-13 | ルネサスエレクトロニクス株式会社 | 半導体チップおよび半導体装置 |
| US7397127B2 (en) * | 2006-10-06 | 2008-07-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bonding and probing pad structures |
| JP5064158B2 (ja) * | 2007-09-18 | 2012-10-31 | 新光電気工業株式会社 | 半導体装置とその製造方法 |
| JP2009218264A (ja) * | 2008-03-07 | 2009-09-24 | Elpida Memory Inc | 半導体装置 |
| JP5160498B2 (ja) * | 2009-05-20 | 2013-03-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP5443827B2 (ja) * | 2009-05-20 | 2014-03-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2009
- 2009-05-20 JP JP2009121857A patent/JP5160498B2/ja active Active
-
2010
- 2010-04-20 TW TW106121861A patent/TWI646644B/zh active
- 2010-04-20 TW TW099112370A patent/TWI548051B/zh active
- 2010-04-20 TW TW105120867A patent/TWI596724B/zh active
- 2010-05-10 CN CN201610424138.3A patent/CN106024744A/zh active Pending
- 2010-05-10 CN CN201010176519.7A patent/CN101894816B/zh active Active
- 2010-05-10 CN CN201410184793.7A patent/CN103943580A/zh active Pending
- 2010-05-12 US US12/778,123 patent/US8946705B2/en active Active
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2015
- 2015-01-05 US US14/589,547 patent/US20150137125A1/en not_active Abandoned
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2016
- 2016-09-29 US US15/280,618 patent/US9824944B2/en active Active
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2017
- 2017-10-17 US US15/785,531 patent/US10163740B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200515519A (en) * | 2003-10-29 | 2005-05-01 | Taiwan Semiconductor Mfg Co Ltd | Bonding pad structure |
| US20060186405A1 (en) * | 2005-02-08 | 2006-08-24 | Nec Electronics Corporation | Semiconductor device and manufacturing process therefor |
| TW200802643A (en) * | 2006-06-14 | 2008-01-01 | Novatek Microelectronics Corp | Chip structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010272622A (ja) | 2010-12-02 |
| US20180040521A1 (en) | 2018-02-08 |
| TWI596724B (zh) | 2017-08-21 |
| CN101894816A (zh) | 2010-11-24 |
| US10163740B2 (en) | 2018-12-25 |
| US20170018470A1 (en) | 2017-01-19 |
| TW201637161A (zh) | 2016-10-16 |
| US9824944B2 (en) | 2017-11-21 |
| CN106024744A (zh) | 2016-10-12 |
| CN103943580A (zh) | 2014-07-23 |
| US20150137125A1 (en) | 2015-05-21 |
| US8946705B2 (en) | 2015-02-03 |
| US20100295043A1 (en) | 2010-11-25 |
| CN101894816B (zh) | 2014-06-11 |
| TW201733061A (zh) | 2017-09-16 |
| JP5160498B2 (ja) | 2013-03-13 |
| TWI548051B (zh) | 2016-09-01 |
| TW201104816A (en) | 2011-02-01 |
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