TWI640826B - 光罩基底、轉印用光罩之製造方法及半導體裝置之製造方法 - Google Patents
光罩基底、轉印用光罩之製造方法及半導體裝置之製造方法 Download PDFInfo
- Publication number
- TWI640826B TWI640826B TW104110322A TW104110322A TWI640826B TW I640826 B TWI640826 B TW I640826B TW 104110322 A TW104110322 A TW 104110322A TW 104110322 A TW104110322 A TW 104110322A TW I640826 B TWI640826 B TW I640826B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- light
- pattern
- photomask
- shielding film
- Prior art date
Links
- 238000012546 transfer Methods 0.000 title claims description 79
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 106
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 100
- 239000011651 chromium Substances 0.000 claims abstract description 95
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 86
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 79
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 78
- 239000001301 oxygen Substances 0.000 claims abstract description 78
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 54
- 239000010703 silicon Substances 0.000 claims abstract description 54
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 22
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims description 149
- 239000007789 gas Substances 0.000 claims description 80
- 229920002120 photoresistant polymer Polymers 0.000 claims description 56
- 238000001312 dry etching Methods 0.000 claims description 51
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 37
- 239000000460 chlorine Substances 0.000 claims description 31
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 23
- 229910052801 chlorine Inorganic materials 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 23
- 238000002834 transmittance Methods 0.000 claims description 21
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 19
- 239000011737 fluorine Substances 0.000 claims description 19
- 229910052731 fluorine Inorganic materials 0.000 claims description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 587
- 239000010410 layer Substances 0.000 description 262
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 49
- 239000000463 material Substances 0.000 description 42
- 239000000203 mixture Substances 0.000 description 39
- 230000010363 phase shift Effects 0.000 description 29
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 16
- 238000000059 patterning Methods 0.000 description 16
- 239000010409 thin film Substances 0.000 description 16
- 229910052718 tin Inorganic materials 0.000 description 16
- 238000004544 sputter deposition Methods 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 12
- 230000003628 erosive effect Effects 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 12
- 239000010453 quartz Substances 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 7
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 7
- 239000001307 helium Substances 0.000 description 7
- 229910052734 helium Inorganic materials 0.000 description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 7
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 7
- 238000005546 reactive sputtering Methods 0.000 description 7
- 229910021332 silicide Inorganic materials 0.000 description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 230000008033 biological extinction Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 229910052723 transition metal Inorganic materials 0.000 description 6
- 150000003624 transition metals Chemical class 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 230000007261 regionalization Effects 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 235000010724 Wisteria floribunda Nutrition 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- JMOHEPRYPIIZQU-UHFFFAOYSA-N oxygen(2-);tantalum(2+) Chemical compound [O-2].[Ta+2] JMOHEPRYPIIZQU-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910021350 transition metal silicide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- SLYSCVGKSGZCPI-UHFFFAOYSA-N [B]=O.[Ta] Chemical compound [B]=O.[Ta] SLYSCVGKSGZCPI-UHFFFAOYSA-N 0.000 description 1
- VEUACKUBDLVUAC-UHFFFAOYSA-N [Na].[Ca] Chemical compound [Na].[Ca] VEUACKUBDLVUAC-UHFFFAOYSA-N 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- XTDAIYZKROTZLD-UHFFFAOYSA-N boranylidynetantalum Chemical compound [Ta]#B XTDAIYZKROTZLD-UHFFFAOYSA-N 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014070686 | 2014-03-30 | ||
| JP2014-070686 | 2014-03-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201600921A TW201600921A (zh) | 2016-01-01 |
| TWI640826B true TWI640826B (zh) | 2018-11-11 |
Family
ID=54240447
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107135331A TWI673564B (zh) | 2014-03-30 | 2015-03-30 | 光罩基底、轉印用光罩之製造方法及半導體裝置之製造方法 |
| TW104110322A TWI640826B (zh) | 2014-03-30 | 2015-03-30 | 光罩基底、轉印用光罩之製造方法及半導體裝置之製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107135331A TWI673564B (zh) | 2014-03-30 | 2015-03-30 | 光罩基底、轉印用光罩之製造方法及半導體裝置之製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10261409B2 (enExample) |
| JP (2) | JP6292581B2 (enExample) |
| KR (2) | KR102243419B1 (enExample) |
| TW (2) | TWI673564B (enExample) |
| WO (1) | WO2015152124A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6544943B2 (ja) * | 2014-03-28 | 2019-07-17 | Hoya株式会社 | マスクブランク、位相シフトマスクの製造方法、位相シフトマスク、および半導体デバイスの製造方法 |
| JP6292581B2 (ja) * | 2014-03-30 | 2018-03-14 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 |
| JP6601245B2 (ja) * | 2015-03-04 | 2019-11-06 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスクの製造方法及びマスクパターン形成方法 |
| JP6608613B2 (ja) * | 2015-05-12 | 2019-11-20 | Ｈｏｙａ株式会社 | 位相シフトマスクブランク、位相シフトマスクの製造方法及び半導体装置の製造方法 |
| JP6903878B2 (ja) * | 2016-07-07 | 2021-07-14 | 凸版印刷株式会社 | 位相シフトマスクブランクおよび位相シフトマスク |
| US11112690B2 (en) * | 2016-08-26 | 2021-09-07 | Hoya Corporation | Mask blank, transfer mask, and method for manufacturing semiconductor device |
| JP6642493B2 (ja) * | 2017-03-10 | 2020-02-05 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク |
| KR102553992B1 (ko) * | 2017-03-31 | 2023-07-10 | 가부시키가이샤 토판 포토마스크 | 위상 시프트 마스크 블랭크, 위상 시프트 마스크 및 위상 시프트 마스크의 제조 방법 |
| CN110770652B (zh) * | 2017-06-14 | 2023-03-21 | Hoya株式会社 | 掩模坯料、相移掩模及半导体器件的制造方法 |
| JP6753375B2 (ja) * | 2017-07-28 | 2020-09-09 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスクブランクの製造方法及びフォトマスクの製造方法 |
| US20220179300A1 (en) * | 2019-03-07 | 2022-06-09 | Hoya Corporation | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
| JP7044095B2 (ja) * | 2019-05-31 | 2022-03-30 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスクの製造方法及びフォトマスク |
| JP7154626B2 (ja) * | 2019-11-26 | 2022-10-18 | Hoya株式会社 | マスクブランク、転写用マスク、及び半導体デバイスの製造方法 |
| JP7329031B2 (ja) * | 2020-12-31 | 2023-08-17 | エスケー エンパルス カンパニー リミテッド | ブランクマスク及びそれを用いたフォトマスク |
| JP7329033B2 (ja) | 2020-12-31 | 2023-08-17 | エスケー エンパルス カンパニー リミテッド | ブランクマスク及びそれを用いたフォトマスク |
| KR102444967B1 (ko) * | 2021-04-29 | 2022-09-16 | 에스케이씨솔믹스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| KR102402742B1 (ko) * | 2021-04-30 | 2022-05-26 | 에스케이씨솔믹스 주식회사 | 포토마스크 블랭크 및 이를 이용한 포토마스크 |
| KR102392332B1 (ko) * | 2021-06-08 | 2022-04-28 | 에스케이씨솔믹스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| KR20240026914A (ko) * | 2021-06-29 | 2024-02-29 | 호야 가부시키가이샤 | 마스크 블랭크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 |
| KR102465982B1 (ko) | 2021-07-13 | 2022-11-09 | 에스케이씨솔믹스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| KR102435818B1 (ko) * | 2021-09-03 | 2022-08-23 | 에스케이씨솔믹스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| KR102503790B1 (ko) * | 2021-10-07 | 2023-02-23 | 에스케이엔펄스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| KR102475672B1 (ko) * | 2021-11-03 | 2022-12-07 | 에스케이씨솔믹스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
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- 2015-03-30 KR KR1020167030016A patent/KR102243419B1/ko active Active
- 2015-03-30 WO PCT/JP2015/059855 patent/WO2015152124A1/ja not_active Ceased
- 2015-03-30 TW TW107135331A patent/TWI673564B/zh active
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| JP6571224B2 (ja) | 2019-09-04 |
| KR102366646B1 (ko) | 2022-02-23 |
| US20170139316A1 (en) | 2017-05-18 |
| US10261409B2 (en) | 2019-04-16 |
| JP6292581B2 (ja) | 2018-03-14 |
| KR20160138242A (ko) | 2016-12-02 |
| WO2015152124A1 (ja) | 2015-10-08 |
| US11231645B2 (en) | 2022-01-25 |
| JP2018087998A (ja) | 2018-06-07 |
| US20190187550A1 (en) | 2019-06-20 |
| KR20210046823A (ko) | 2021-04-28 |
| JP2015200883A (ja) | 2015-11-12 |
| TW201903513A (zh) | 2019-01-16 |
| TW201600921A (zh) | 2016-01-01 |
| TWI673564B (zh) | 2019-10-01 |
| KR102243419B1 (ko) | 2021-04-21 |
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