JP6292581B2 - マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 - Google Patents
マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 Download PDFInfo
- Publication number
- JP6292581B2 JP6292581B2 JP2015066348A JP2015066348A JP6292581B2 JP 6292581 B2 JP6292581 B2 JP 6292581B2 JP 2015066348 A JP2015066348 A JP 2015066348A JP 2015066348 A JP2015066348 A JP 2015066348A JP 6292581 B2 JP6292581 B2 JP 6292581B2
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- JP
- Japan
- Prior art keywords
- film
- light
- pattern
- mask
- shielding film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015066348A JP6292581B2 (ja) | 2014-03-30 | 2015-03-27 | マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014070686 | 2014-03-30 | ||
| JP2014070686 | 2014-03-30 | ||
| JP2015066348A JP6292581B2 (ja) | 2014-03-30 | 2015-03-27 | マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018019173A Division JP6571224B2 (ja) | 2014-03-30 | 2018-02-06 | マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015200883A JP2015200883A (ja) | 2015-11-12 |
| JP2015200883A5 JP2015200883A5 (enExample) | 2016-10-06 |
| JP6292581B2 true JP6292581B2 (ja) | 2018-03-14 |
Family
ID=54240447
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015066348A Active JP6292581B2 (ja) | 2014-03-30 | 2015-03-27 | マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 |
| JP2018019173A Active JP6571224B2 (ja) | 2014-03-30 | 2018-02-06 | マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018019173A Active JP6571224B2 (ja) | 2014-03-30 | 2018-02-06 | マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10261409B2 (enExample) |
| JP (2) | JP6292581B2 (enExample) |
| KR (2) | KR102243419B1 (enExample) |
| TW (2) | TWI640826B (enExample) |
| WO (1) | WO2015152124A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6544943B2 (ja) * | 2014-03-28 | 2019-07-17 | Hoya株式会社 | マスクブランク、位相シフトマスクの製造方法、位相シフトマスク、および半導体デバイスの製造方法 |
| JP6292581B2 (ja) * | 2014-03-30 | 2018-03-14 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 |
| JP6601245B2 (ja) * | 2015-03-04 | 2019-11-06 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスクの製造方法及びマスクパターン形成方法 |
| JP6608613B2 (ja) * | 2015-05-12 | 2019-11-20 | Hoya株式会社 | 位相シフトマスクブランク、位相シフトマスクの製造方法及び半導体装置の製造方法 |
| JP6903878B2 (ja) * | 2016-07-07 | 2021-07-14 | 凸版印刷株式会社 | 位相シフトマスクブランクおよび位相シフトマスク |
| JP6297766B1 (ja) * | 2016-08-26 | 2018-03-20 | Hoya株式会社 | マスクブランク、転写用マスク及び半導体デバイスの製造方法 |
| JP6642493B2 (ja) * | 2017-03-10 | 2020-02-05 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク |
| SG11201907839RA (en) * | 2017-03-31 | 2019-10-30 | Toppan Printing Co Ltd | Phase shift mask blank, phase shift mask and manufacturing method for phase shift mask |
| US11048160B2 (en) * | 2017-06-14 | 2021-06-29 | Hoya Corporation | Mask blank, phase shift mask and method for manufacturing semiconductor device |
| JP6753375B2 (ja) * | 2017-07-28 | 2020-09-09 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスクブランクの製造方法及びフォトマスクの製造方法 |
| WO2020179463A1 (ja) * | 2019-03-07 | 2020-09-10 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
| JP7044095B2 (ja) * | 2019-05-31 | 2022-03-30 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスクの製造方法及びフォトマスク |
| JP7154626B2 (ja) * | 2019-11-26 | 2022-10-18 | Hoya株式会社 | マスクブランク、転写用マスク、及び半導体デバイスの製造方法 |
| JP7329033B2 (ja) | 2020-12-31 | 2023-08-17 | エスケー エンパルス カンパニー リミテッド | ブランクマスク及びそれを用いたフォトマスク |
| JP7329031B2 (ja) * | 2020-12-31 | 2023-08-17 | エスケー エンパルス カンパニー リミテッド | ブランクマスク及びそれを用いたフォトマスク |
| KR102444967B1 (ko) * | 2021-04-29 | 2022-09-16 | 에스케이씨솔믹스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| KR102402742B1 (ko) * | 2021-04-30 | 2022-05-26 | 에스케이씨솔믹스 주식회사 | 포토마스크 블랭크 및 이를 이용한 포토마스크 |
| KR102392332B1 (ko) * | 2021-06-08 | 2022-04-28 | 에스케이씨솔믹스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| KR20240026914A (ko) * | 2021-06-29 | 2024-02-29 | 호야 가부시키가이샤 | 마스크 블랭크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 |
| KR102465982B1 (ko) | 2021-07-13 | 2022-11-09 | 에스케이씨솔믹스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| KR102435818B1 (ko) * | 2021-09-03 | 2022-08-23 | 에스케이씨솔믹스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| KR102503790B1 (ko) * | 2021-10-07 | 2023-02-23 | 에스케이엔펄스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| KR102475672B1 (ko) * | 2021-11-03 | 2022-12-07 | 에스케이씨솔믹스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| KR102537003B1 (ko) | 2022-05-13 | 2023-05-26 | 에스케이엔펄스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5685751A (en) * | 1979-12-14 | 1981-07-13 | Fujitsu Ltd | Photomask |
| JP2909317B2 (ja) * | 1992-08-20 | 1999-06-23 | 三菱電機株式会社 | フォトマスク |
| JP2001147516A (ja) * | 2000-11-27 | 2001-05-29 | Hoya Corp | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
| JP2003195479A (ja) * | 2001-12-28 | 2003-07-09 | Hoya Corp | ハーフトーン型位相シフトマスクブランク、及びハーフトーン型位相シフトマスクの製造方法 |
| US7166392B2 (en) | 2002-03-01 | 2007-01-23 | Hoya Corporation | Halftone type phase shift mask blank and halftone type phase shift mask |
| JP3093632U (ja) * | 2002-03-01 | 2003-05-16 | Hoya株式会社 | ハーフトーン型位相シフトマスクブランク |
| US7781125B2 (en) * | 2002-12-26 | 2010-08-24 | Hoya Corporation | Lithography mask blank |
| DE112004000591B4 (de) | 2003-04-09 | 2020-09-10 | Hoya Corp. | Herstellungsverfahren für Photomaske |
| JP4443873B2 (ja) * | 2003-08-15 | 2010-03-31 | Hoya株式会社 | 位相シフトマスクの製造方法 |
| DE602006021102D1 (de) | 2005-07-21 | 2011-05-19 | Shinetsu Chemical Co | Photomaskenrohling, Photomaske und deren Herstellungsverfahren |
| JP4933754B2 (ja) * | 2005-07-21 | 2012-05-16 | 信越化学工業株式会社 | フォトマスクブランクおよびフォトマスクならびにこれらの製造方法 |
| JP4883278B2 (ja) | 2006-03-10 | 2012-02-22 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスクの製造方法 |
| JP4989800B2 (ja) | 2008-09-27 | 2012-08-01 | Hoya株式会社 | マスクブランク及び転写用マスクの製造方法 |
| US20110159411A1 (en) * | 2009-12-30 | 2011-06-30 | Bennett Olson | Phase-shift photomask and patterning method |
| JP5704754B2 (ja) * | 2010-01-16 | 2015-04-22 | Hoya株式会社 | マスクブランク及び転写用マスクの製造方法 |
| JP5464186B2 (ja) * | 2011-09-07 | 2014-04-09 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスク及びその製造方法 |
| JP5286455B1 (ja) * | 2012-03-23 | 2013-09-11 | Hoya株式会社 | マスクブランク、転写用マスクおよびこれらの製造方法 |
| JP5739375B2 (ja) | 2012-05-16 | 2015-06-24 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスクの製造方法 |
| JP6371221B2 (ja) * | 2012-11-08 | 2018-08-08 | Hoya株式会社 | マスクブランクの製造方法および転写用マスクの製造方法 |
| JP5882504B2 (ja) * | 2013-01-18 | 2016-03-09 | Hoya株式会社 | マスクブランク用基板の製造方法、マスクブランクの製造方法及び転写用マスクの製造方法 |
| US9886104B2 (en) | 2013-02-17 | 2018-02-06 | Adonit Co., Ltd. | Stylus for capacitive touchscreen |
| JP6101646B2 (ja) * | 2013-02-26 | 2017-03-22 | Hoya株式会社 | 位相シフトマスクブランク及びその製造方法、位相シフトマスク及びその製造方法、並びに表示装置の製造方法 |
| JP6150299B2 (ja) * | 2014-03-30 | 2017-06-21 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 |
| JP6292581B2 (ja) * | 2014-03-30 | 2018-03-14 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法 |
-
2015
- 2015-03-27 JP JP2015066348A patent/JP6292581B2/ja active Active
- 2015-03-30 KR KR1020167030016A patent/KR102243419B1/ko active Active
- 2015-03-30 WO PCT/JP2015/059855 patent/WO2015152124A1/ja not_active Ceased
- 2015-03-30 TW TW104110322A patent/TWI640826B/zh active
- 2015-03-30 US US15/300,376 patent/US10261409B2/en active Active
- 2015-03-30 TW TW107135331A patent/TWI673564B/zh active
- 2015-03-30 KR KR1020217011252A patent/KR102366646B1/ko active Active
-
2018
- 2018-02-06 JP JP2018019173A patent/JP6571224B2/ja active Active
-
2019
- 2019-02-22 US US16/282,699 patent/US11231645B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US10261409B2 (en) | 2019-04-16 |
| KR20160138242A (ko) | 2016-12-02 |
| JP2018087998A (ja) | 2018-06-07 |
| TWI673564B (zh) | 2019-10-01 |
| KR102243419B1 (ko) | 2021-04-21 |
| KR20210046823A (ko) | 2021-04-28 |
| US20170139316A1 (en) | 2017-05-18 |
| TWI640826B (zh) | 2018-11-11 |
| TW201903513A (zh) | 2019-01-16 |
| KR102366646B1 (ko) | 2022-02-23 |
| JP6571224B2 (ja) | 2019-09-04 |
| JP2015200883A (ja) | 2015-11-12 |
| TW201600921A (zh) | 2016-01-01 |
| WO2015152124A1 (ja) | 2015-10-08 |
| US20190187550A1 (en) | 2019-06-20 |
| US11231645B2 (en) | 2022-01-25 |
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