TWI627315B - 電鍍膜的製造方法 - Google Patents

電鍍膜的製造方法 Download PDF

Info

Publication number
TWI627315B
TWI627315B TW103116038A TW103116038A TWI627315B TW I627315 B TWI627315 B TW I627315B TW 103116038 A TW103116038 A TW 103116038A TW 103116038 A TW103116038 A TW 103116038A TW I627315 B TWI627315 B TW I627315B
Authority
TW
Taiwan
Prior art keywords
workpiece
main surface
film
current
power supply
Prior art date
Application number
TW103116038A
Other languages
English (en)
Chinese (zh)
Other versions
TW201500599A (zh
Inventor
吳宗昭
有賀庸介
Original Assignee
新光電氣工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新光電氣工業股份有限公司 filed Critical 新光電氣工業股份有限公司
Publication of TW201500599A publication Critical patent/TW201500599A/zh
Application granted granted Critical
Publication of TWI627315B publication Critical patent/TWI627315B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/007—Current directing devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/627—Electroplating characterised by the visual appearance of the layers, e.g. colour, brightness or mat appearance
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Lead Frames For Integrated Circuits (AREA)
TW103116038A 2013-05-14 2014-05-06 電鍍膜的製造方法 TWI627315B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013102470A JP6093646B2 (ja) 2013-05-14 2013-05-14 めっき膜の製造方法
JP2013-102470 2013-05-14

Publications (2)

Publication Number Publication Date
TW201500599A TW201500599A (zh) 2015-01-01
TWI627315B true TWI627315B (zh) 2018-06-21

Family

ID=51878578

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103116038A TWI627315B (zh) 2013-05-14 2014-05-06 電鍍膜的製造方法

Country Status (5)

Country Link
JP (1) JP6093646B2 (uk)
KR (1) KR102102263B1 (uk)
CN (1) CN104152959B (uk)
MY (1) MY194185A (uk)
TW (1) TWI627315B (uk)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6685112B2 (ja) * 2015-11-18 2020-04-22 株式会社三井ハイテック リードフレーム及びリードフレームパッケージ、並びにこれらの製造方法
JP6905031B2 (ja) * 2016-02-17 2021-07-21 株式会社三井ハイテック リードフレーム及び半導体パッケージ
JP6621681B2 (ja) * 2016-02-17 2019-12-18 株式会社三井ハイテック リードフレーム及びその製造方法、並びに半導体パッケージ
JP6782116B2 (ja) * 2016-08-02 2020-11-11 古河電気工業株式会社 銀被覆材料
CN109468670B (zh) * 2018-11-16 2021-03-26 中山品高电子材料有限公司 引线框架电镀铜层的方法
CN112331566B (zh) * 2020-11-02 2024-09-27 昆山一鼎工业科技有限公司 引线框架表面粗糙度的制造设备及制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6179988B1 (en) * 1997-08-29 2001-01-30 Electrocopper Products Limited Process for making copper wire
JP3690603B2 (ja) * 2002-11-28 2005-08-31 株式会社中央製作所 連続式めっきの電流制御方法
CN2587889Y (zh) * 2002-12-11 2003-11-26 吕明 制造高孔隙率金属带材的电沉积设备
JP2005097721A (ja) * 2003-08-27 2005-04-14 Yamaha Corp 両面メッキ装置および両面メッキ方法
CN2712947Y (zh) * 2004-07-20 2005-07-27 戴其金 一种双阳极电镀槽
JP4981488B2 (ja) * 2007-03-09 2012-07-18 古河電気工業株式会社 粗化圧延銅板およびその製造方法
KR20100066988A (ko) * 2008-12-10 2010-06-18 삼성테크윈 주식회사 전자회로기판의 균일 도금 방법
KR100950442B1 (ko) * 2009-05-13 2010-04-02 주식회사 모아기술 고주파펄스를 이용한 알루미늄소재의 항균성 표면처리방법
CN102337578B (zh) * 2010-07-19 2014-04-02 北大方正集团有限公司 一种双面电镀槽、板件及电镀方法

Also Published As

Publication number Publication date
MY194185A (en) 2022-11-17
CN104152959B (zh) 2018-11-13
CN104152959A (zh) 2014-11-19
JP2014221941A (ja) 2014-11-27
KR20140135108A (ko) 2014-11-25
JP6093646B2 (ja) 2017-03-08
TW201500599A (zh) 2015-01-01
KR102102263B1 (ko) 2020-04-20

Similar Documents

Publication Publication Date Title
TWI627315B (zh) 電鍍膜的製造方法
KR20100103015A (ko) 리드 프레임 및 그 제조방법
TW201726983A (zh) 引線框架材及其製造方法
JP2020155748A (ja) リードフレーム
JPH09148508A (ja) 半導体装置用リードフレーム及びこれを用いた樹脂封止型半導体装置
CN108352376B (zh) 引线框架、引线框架封装、以及它们的制造方法
CN112912546B (zh) 导电性材料、成型品以及电子部件
JP5766318B2 (ja) リードフレーム
JP7178530B1 (ja) リードフレーム材およびその製造方法、ならびに半導体パッケージ
JP6318613B2 (ja) 発光装置用リードフレーム又は基板に用いられるめっき液、並びに、それを用いて製造されるリードフレーム又は基板、及びその製造方法、及びそれを備える発光装置
CN112805413B (zh) 导电性材料、成型品以及电子部件
JP2014123760A5 (uk)
JP2005213573A (ja) 粗化銅めっき液及びそのめっき方法
JP2022148743A (ja) 導電性材料、成型品及び電子部品
JPS59231844A (ja) 半導体装置用リ−ドフレ−ム
JP4704313B2 (ja) リードフレームのめっき方法
JP7366480B1 (ja) リードフレーム材およびその製造方法、ならびにリードフレーム材を用いた半導体パッケージ
TW201940743A (zh) 引線框架材料及其製造方法、以及使用此引線框架材料之半導體封裝體
JP2020155747A (ja) リードフレーム
JPH0987899A (ja) 電子機器用銅合金材料の製造方法
JPH0421000B2 (uk)
JP2007009334A5 (uk)
WO2023286697A1 (ja) リードフレーム材およびその製造方法、ならびに半導体パッケージ
JP2022085602A (ja) めっき材料及び電子部品
JP2021172836A (ja) シアン系電解粗化銀めっき液